Patents for C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968)
10/2005
10/13/2005US20050223969 Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof
10/13/2005US20050223968 Patterned atomic layer epitaxy
10/13/2005US20050223967 Powder metallurgy crucible for aluminum nitride crystal growth
10/12/2005CN1681143A Rapid circulating crystallizing device and method for preparing nanometer crystal material
10/06/2005US20050217571 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/06/2005US20050217569 Methods of depositing an elemental silicon-comprising material over a semiconductor substrate and methods of cleaning an internal wall of a chamber
10/06/2005US20050217568 Deposition of buffer layers on textured metal surfaces
10/06/2005US20050217567 Covering assembly for crucible used for evaporation of raw materials
10/06/2005US20050217560 Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
09/2005
09/29/2005US20050211157 Process control system for controlling a crystal-growing apparatus
09/22/2005WO2005086962A2 System and method for fabricating a crystalline thin structure
09/22/2005US20050205002 Casting method
09/22/2005US20050205000 Low defect density silicon
09/21/2005EP1577496A2 Casting method for turbine blade
09/20/2005CA2339745C Method and apparatus for manufacturing photonic crystal element
09/15/2005WO2005084225A2 System for continuous growing of monocrystalline silicon
09/15/2005US20050199181 System and method for fabricating a crystalline thin structure
09/09/2005WO2005029550A3 Method and system for producing crystalline thin films with a uniform crystalline orientation
09/08/2005DE102004062914A1 Fotovoltaisches Umwandlungsbauteil und Verfahren zum Herstellen des Bauteils A photovoltaic conversion element and method for manufacturing the component
09/01/2005WO2005064034A3 Device for depositing a polycrystalline silicon layer on a support
09/01/2005US20050188917 Method for manufacturing crystal plate
08/2005
08/25/2005US20050183660 Method of identifying defect distribution in silicon single crystal ingot
08/04/2005US20050166834 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
07/2005
07/28/2005US20050163692 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
07/28/2005US20050161773 Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon
07/28/2005US20050161663 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
07/28/2005US20050160972 Method and resulting structure for manufacturing semiconductor substrates
07/28/2005US20050160970 Photovoltaic conversion device and method of manufacturing the device
07/21/2005US20050156155 Electronics, opto-electronic, magneto-electronics and magneto-optics devices, single crystal, integrated circuits
07/20/2005CN1643677A Method and resulting structure for manufacturing semiconductor substrates
07/19/2005US6919261 Method and resulting structure for manufacturing semiconductor substrates
07/14/2005WO2005064034A2 Device for depositing a polycrystalline silicon layer on a support
07/07/2005US20050148206 Atomic layer deposition using photo-enhanced bond reconfiguration
07/07/2005US20050145165 Lithium niobate substrate and method of producing the same
06/2005
06/30/2005WO2004042798A3 Apparatus and method for treating objects with radicals generated from plasma
06/30/2005US20050139152 Optical lithography fluoride crystal annealing furnace
06/29/2005CN1632187A Process for fluid-tight-free synthesis of gallium arsenide polycrystalline material
06/23/2005US20050136564 Method of laterally growing GaN with indium doping
06/23/2005US20050132949 Forming carbon nanotubes by iterating nanotube growth and post-treatment steps
06/16/2005DE102004056741A1 Lithium niobate substrate, useful as acoustic surface wave device for mobile telephones, is prepared by heat treating crystalline material at relatively low temperature
06/02/2005US20050115493 Thermal shield
06/02/2005US20050115492 Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition
06/01/2005EP1535309A1 Radiation detector
06/01/2005CN1621578A Lithium niobate substrate and manufacturing method thereof
05/2005
05/26/2005US20050109270 Optical lithography fluoride crystal annealing furnace
05/25/2005DE10341806A1 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Schicht und integriertes Halbleiterbauelement mit einer epitaktischen mit Arsen in-situ dotierten Silizium-Germanium Schicht A process for producing an epitaxial silicon-germanium layer and integrated semiconductor device with an epitaxial doped with arsenic in-situ silicon-germanium layer
05/19/2005US20050103260 Method of exposing wafer using scan-type exposure apparatus
05/17/2005US6893993 Polycrystalline material, process for producing thereof, and articles manufactured therefrom
05/12/2005WO2005042812A1 Scintillation substances (variants)
05/12/2005US20050098093 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer
05/12/2005US20050098091 Etch selectivity enhancement for tunable etch resistant anti-reflective layer
05/05/2005US20050092236 System for continuous growing of monocrystalline silicon
05/05/2005US20050092235 Epitaxial semiconductor deposition methods and structures
05/05/2005US20050092233 Single and multi-layer crystalline structures
05/05/2005US20050092231 Method and apparatus for making crystals without a pre-melt step
05/03/2005CA2216998C In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
04/2005
04/28/2005US20050087126 Non-contact orbit control system for Czochralski crystal growth
04/21/2005US20050081781 Fully dry, Si recess free process for removing high k dielectric layer
04/20/2005EP1523463A2 Diamondoid-based components in nanoscale construction
04/14/2005US20050076828 Process for fabrication of III nitride-based compound semiconductors
04/14/2005US20050076826 Silicon seed crystal and method for manufacturing silicon single crystal
04/07/2005WO2005030636A2 Methods, devices and compositions for depositing and orienting nanostructures
04/07/2005CA2538262A1 Methods, devices and compositions for depositing and orienting nanostructures
03/2005
03/31/2005WO2005029550A2 Method and system for producing crystalline thin films with a uniform crystalline orientation
03/31/2005WO2004081477A3 Analytical furnace with predictive temperature control
03/31/2005US20050066883 Methods, devices and compositions for depositing and orienting nanostructures
03/31/2005US20050066881 Continuous production method for crystalline silicon and production apparatus for the same
03/24/2005US20050061232 Doped organic semiconductor materials and process for their preparation
03/24/2005DE10338406A1 Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung Doped organic semiconductor materials as well as processes for their preparation
03/17/2005US20050056204 Rare earth silicate single crystal and process for production of rare earth silicate single crystals
03/17/2005DE102004040053A1 Production of a silicon single crystal comprises drawing a single crystal using the Czochralski method and a silicon seed crystal which has no empty site excess region on a contact surface between the crystal and a starting material
03/15/2005US6866793 High selectivity and high planarity dielectric polishing
03/10/2005WO2004057631A3 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
03/10/2005US20050051097 Covering assembly for crucible used for evaporation of raw materials
03/09/2005CN1591926A Doped organic semiconductor materials and process for their preparation
03/03/2005US20050045089 Method of attaching an end seal to manufactured seeds
03/03/2005DE102004024924A1 Verfahren zum Herstellen polykristallinen Siliciums sowie Schaltbauteil unter Verwendung polykristallinen Siliciums A method for producing polycrystalline silicon as well as switching device using polycrystalline silicon
02/2005
02/23/2005EP1508903A2 Endowed organic semiconductor materials and method of prepration
02/18/2005CA2476168A1 Doped organic semiconductor materials and process for their preparation
02/17/2005US20050034650 Ultrahard diamonds and method of making thereof
02/03/2005US20050025886 Annealing single crystal chemical vapor depositon diamonds
02/02/2005CN1574225A Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon
01/2005
01/27/2005WO2005007937A2 Annealing single crystal chemical vapor deposition diamonds
01/27/2005WO2005007936A2 Ultrahard diamonds and method of making thereof
01/27/2005WO2005007935A2 Tough diamonds and method of making thereof
01/27/2005CA2532384A1 Annealing single crystal chemical vapor deposition diamonds
01/27/2005CA2532227A1 Tough diamonds and method of making thereof
01/20/2005US20050011433 Tough diamonds and method of making thereof
01/18/2005US6844074 Quartz layer; vibrators, oscillators, high frequency filter surface acoustic wave elements, optical waveguides, semicon-ductors; atmospheric pressure vapor phase epitaxial deposited silicate on gallium nitride or zinc oxide buffered substrate
12/2004
12/29/2004WO2004073024A3 Method and apparatus for making continuous films ofa single crystal material
12/29/2004CN2666932Y Apparatus for compound semiconductor material polycrystal synthetization
12/14/2004US6830740 Method for producing solar cell and solar cell
12/08/2004EP1483786A1 Method and resulting structure for manufacturing semiconductor substrate
11/2004
11/25/2004US20040235279 Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon
11/24/2004CN1549313A Method for conventing non-crystalline silicon into polycrystal silicon
11/23/2004US6821342 Method for forming suspended microstructures
11/17/2004CN1546744A Orientation growth method of polycrystalline silicon
11/10/2004EP1474824A2 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/04/2004US20040219735 Epitaxial semiconductor deposition methods and structures
10/2004
10/19/2004US6805744 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates
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