Patents for C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968)
05/2006
05/04/2006US20060090691 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film
05/04/2006US20060090690 Method of purifying alkaline-earth and alkali-earth halides for crystal growth
04/2006
04/27/2006US20060086315 Sample mounts for microcrystal crystallography
04/27/2006US20060086314 Iridium oxide nanowires and method for forming same
04/27/2006US20060086313 Soi wafer and method for manufacturing same
04/27/2006US20060086312 Methods and apparatuses for a dynamic growing of single-crystal thin-film composed of organic materials
04/27/2006US20060086311 Scintillation substances (variants)
04/26/2006CN1253610C Low defect density self-interstitial atom controlled silicon
04/25/2006US7033434 Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same
04/20/2006US20060081172 Method for preparing diamond from graphite by inner shell electron excitation
04/20/2006DE102005048680A1 Trimethylgallium, Verfahren zur Herstellung desselben und aus dem Trimethylgallium gezüchteter Galliumnitriddünnfilm Trimethylgallium, method for producing the same and bred from the trimethylgallium Galliumnitriddünnfilm
04/13/2006WO2006039065A2 Method of growing group iii nitride crystals
04/13/2006US20060075959 Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium
04/13/2006US20060075958 Low basal plane dislocation bulk grown SiC wafers
04/13/2006US20060075957 Annealed wafer and anneald wafer manufacturing method
04/06/2006US20060073978 Method and apparatus for making continuous films of a single crystal material
04/06/2006US20060070569 Roll crusher to produce high purity polycrystalline silicon chips
03/2006
03/30/2006US20060065187 Ultratough CVD single crystal diamond and three dimensional growth thereof
03/30/2006US20060065186 Process for producing crystalline thin film
03/30/2006US20060065185 Crystallization apparatus, crystallization method, and phase shifter
03/30/2006US20060065184 Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer
03/23/2006US20060060133 Apparatus and method for supplying raw material in Czochralski method
03/23/2006US20060060132 Production method for thin-film crystal wafer, semiconductor device using it and production method therefor
03/23/2006US20060060131 Method of forming a rare-earth dielectric layer
03/23/2006US20060060129 Process of producing silicon wafer
03/23/2006DE102005044328A1 Polycrystalline silicon for use in solar energy production is produced by passing silane gas over heated silicon seed rod in sealed reactor at high temperature, so that it is thermally decomposed or reduced with hydrogen
03/22/2006CN1246509C Method of laser crystallization
03/16/2006US20060054081 Rotationally-vibrated unidirectional solidification crystal growth system and its method
03/16/2006US20060054080 Method and apparatus for eliminating a display defect in a liquid crystal display device
03/16/2006US20060054079 Forming structures by laser deposition
03/09/2006US20060048702 Method for manufacturing a silicon structure
03/09/2006US20060048701 Method of growing group III nitride crystals
03/09/2006US20060048700 Method for achieving device-quality, lattice-mismatched, heteroepitaxial active layers
03/09/2006US20060048699 Apparatus for producing single crystal and quasi-single crystal, and associated method
03/08/2006EP1535309A4 Radiation detector
03/02/2006US20060042542 Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers
03/02/2006US20060042541 Method for preparation of ferroelectric single crystal film structure using deposition method
03/02/2006US20060042540 Manufacturing equipment of SiC Single crystal and method for manufacturing SiC single crystal
03/02/2006US20060042539 Silicon cleaning method for semiconductor materials and polycrystalline silicon chunk
03/02/2006DE102004042343A1 Method for modifying amorphous semiconductors comprises irradiating a region of the semiconductor with a laser beam to melt the region of the semiconductor up to the melting temperature of the semiconductor and further processing
02/2006
02/23/2006US20060037531 Furnace purification and metal fluoride crystals grown in a purified furnace
02/23/2006US20060037529 Single crystal and quasi-single crystal, composition, apparatus, and associated method
02/16/2006US20060035438 Method and resulting structure for manufacturing semiconductor substrates
02/16/2006US20060032434 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
02/16/2006US20060032433 Rapid X-ray diffraction method for structural analysis of a nano material on a surface or at an interface and for structural analysis of a solid/liquid interface, and apparatus used for the method
02/16/2006US20060032432 Bulk single crystal gallium nitride and method of making same
02/16/2006US20060032431 High pressure crystal growth apparatuses and associated methods
02/16/2006US20060032430 Method and apparatus for the measurement, orientation and fixation of at least one single crystal
02/14/2006US6997987 Optical lithography fluoride crystal annealing furnace
02/09/2006WO2006015185A2 GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
02/09/2006US20060027162 Crystallization apparatus, crystallization method, and phase modulation device
02/09/2006US20060027161 Method for heat-treating silicon wafer and silicon wafer
02/09/2006US20060027159 Silicon wafer production process and silicon wafer
02/08/2006CN1240884C Amorphous silicon crystallizing method
02/02/2006WO2006011389A1 METHOD FOR PRODUCING RE-Ba-Cu-O OXIDE SUPERCONDUCTOR
02/02/2006WO2005007937A3 Annealing single crystal chemical vapor deposition diamonds
02/02/2006WO2005007935A3 Tough diamonds and method of making thereof
02/02/2006US20060021567 Apparatus for pulling single crystal
02/02/2006US20060021565 GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer
02/02/2006US20060021564 Nanostructures produced by phase-separation during growth of (iii-v )1-x(iv2)x alloys
02/02/2006US20060021563 Systems and methods for generating images of crystals
02/01/2006CN1729317A Method for forming carbon nanotubes
02/01/2006CN1727526A Method for preparing microlite silicon
02/01/2006CN1239756C Method for crystalizing amorphous silicon
01/2006
01/26/2006US20060016388 Domain epitaxy for thin film growth
01/26/2006US20060016387 Silicon wafer, its manufacturing method, and its manufacturing apparatus
01/24/2006US6989300 Method for forming semiconductor films at desired positions on a substrate
01/19/2006US20060011131 SiC material, semiconductor device fabricating system and SiC material forming method
01/19/2006US20060011130 Methods of growing epitaxial silicon
01/19/2006US20060011129 Method for fabricating a compound semiconductor epitaxial wafer
01/19/2006US20060011128 Homoepitaxial growth of SiC on low off-axis SiC wafers
01/19/2006US20060011127 Process for producing diamond, graphite or mixture of diamond and graphite
01/12/2006WO2006005018A2 Process for producing a crystalline silicon ingot
01/12/2006WO2006004905A2 Systems and methods for generating images of crystals
01/12/2006US20060005763 Method and apparatus for producing large, single-crystals of aluminum nitride
01/12/2006CA2571119A1 Systems and methods for generating images of crystals
01/11/2006CN1720356A Fabrication method for crystalline semiconductor films on foreign substrates
01/05/2006US20060003584 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device
01/05/2006US20060000409 Process for producing a crystalline silicon ingot
01/05/2006US20060000408 Inorganic scintillator and process for its fabrication
01/04/2006CN1234921C Method and apparatus for preparing poly crystals of S-Ga-Ag
01/03/2006US6982001 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
12/2005
12/29/2005US20050284360 Atomic layer deposition using electron bombardment
12/22/2005WO2005121414A1 Deposition of buffer layers on textured metal surfaces
12/22/2005US20050279278 Melter assembly and method for charging a crystal forming apparatus with molten source material
12/22/2005US20050279276 Melter assembly and method for charging a crystal forming apparatus with molten source material
12/20/2005US6977010 Apparatus for pulling single crystal by CZ method
12/15/2005US20050277235 Methods of manufacturing semiconductor devices having single crystalline silicon layers and related semiconductor devices
12/13/2005US6974501 Multi-layer articles and methods of making same
12/08/2005US20050268841 Radiation detector
12/08/2005US20050268840 Apparatus for pulling single crystal by CZ method
12/07/2005EP1602131A1 Via and trench structures for semiconductor substrates bonded to metallic substrates
12/01/2005US20050263065 Vapor assisted growth of gallium nitride
12/01/2005US20050263064 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
11/2005
11/30/2005EP1600043A2 Analytical furnace with predictive temperature control
11/17/2005US20050255672 Method and resulting structure for manufacturing semiconductor substrates
11/17/2005US20050252443 Epitaxy layer and method of forming the same
11/02/2005CN1691275A Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
11/01/2005US6960490 Method and resulting structure for manufacturing semiconductor substrates
10/2005
10/13/2005US20050227453 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
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