Patents for C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968) |
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05/04/2006 | US20060090691 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film |
05/04/2006 | US20060090690 Method of purifying alkaline-earth and alkali-earth halides for crystal growth |
04/27/2006 | US20060086315 Sample mounts for microcrystal crystallography |
04/27/2006 | US20060086314 Iridium oxide nanowires and method for forming same |
04/27/2006 | US20060086313 Soi wafer and method for manufacturing same |
04/27/2006 | US20060086312 Methods and apparatuses for a dynamic growing of single-crystal thin-film composed of organic materials |
04/27/2006 | US20060086311 Scintillation substances (variants) |
04/26/2006 | CN1253610C Low defect density self-interstitial atom controlled silicon |
04/25/2006 | US7033434 Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same |
04/20/2006 | US20060081172 Method for preparing diamond from graphite by inner shell electron excitation |
04/20/2006 | DE102005048680A1 Trimethylgallium, Verfahren zur Herstellung desselben und aus dem Trimethylgallium gezüchteter Galliumnitriddünnfilm Trimethylgallium, method for producing the same and bred from the trimethylgallium Galliumnitriddünnfilm |
04/13/2006 | WO2006039065A2 Method of growing group iii nitride crystals |
04/13/2006 | US20060075959 Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium |
04/13/2006 | US20060075958 Low basal plane dislocation bulk grown SiC wafers |
04/13/2006 | US20060075957 Annealed wafer and anneald wafer manufacturing method |
04/06/2006 | US20060073978 Method and apparatus for making continuous films of a single crystal material |
04/06/2006 | US20060070569 Roll crusher to produce high purity polycrystalline silicon chips |
03/30/2006 | US20060065187 Ultratough CVD single crystal diamond and three dimensional growth thereof |
03/30/2006 | US20060065186 Process for producing crystalline thin film |
03/30/2006 | US20060065185 Crystallization apparatus, crystallization method, and phase shifter |
03/30/2006 | US20060065184 Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer |
03/23/2006 | US20060060133 Apparatus and method for supplying raw material in Czochralski method |
03/23/2006 | US20060060132 Production method for thin-film crystal wafer, semiconductor device using it and production method therefor |
03/23/2006 | US20060060131 Method of forming a rare-earth dielectric layer |
03/23/2006 | US20060060129 Process of producing silicon wafer |
03/23/2006 | DE102005044328A1 Polycrystalline silicon for use in solar energy production is produced by passing silane gas over heated silicon seed rod in sealed reactor at high temperature, so that it is thermally decomposed or reduced with hydrogen |
03/22/2006 | CN1246509C Method of laser crystallization |
03/16/2006 | US20060054081 Rotationally-vibrated unidirectional solidification crystal growth system and its method |
03/16/2006 | US20060054080 Method and apparatus for eliminating a display defect in a liquid crystal display device |
03/16/2006 | US20060054079 Forming structures by laser deposition |
03/09/2006 | US20060048702 Method for manufacturing a silicon structure |
03/09/2006 | US20060048701 Method of growing group III nitride crystals |
03/09/2006 | US20060048700 Method for achieving device-quality, lattice-mismatched, heteroepitaxial active layers |
03/09/2006 | US20060048699 Apparatus for producing single crystal and quasi-single crystal, and associated method |
03/08/2006 | EP1535309A4 Radiation detector |
03/02/2006 | US20060042542 Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers |
03/02/2006 | US20060042541 Method for preparation of ferroelectric single crystal film structure using deposition method |
03/02/2006 | US20060042540 Manufacturing equipment of SiC Single crystal and method for manufacturing SiC single crystal |
03/02/2006 | US20060042539 Silicon cleaning method for semiconductor materials and polycrystalline silicon chunk |
03/02/2006 | DE102004042343A1 Method for modifying amorphous semiconductors comprises irradiating a region of the semiconductor with a laser beam to melt the region of the semiconductor up to the melting temperature of the semiconductor and further processing |
02/23/2006 | US20060037531 Furnace purification and metal fluoride crystals grown in a purified furnace |
02/23/2006 | US20060037529 Single crystal and quasi-single crystal, composition, apparatus, and associated method |
02/16/2006 | US20060035438 Method and resulting structure for manufacturing semiconductor substrates |
02/16/2006 | US20060032434 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
02/16/2006 | US20060032433 Rapid X-ray diffraction method for structural analysis of a nano material on a surface or at an interface and for structural analysis of a solid/liquid interface, and apparatus used for the method |
02/16/2006 | US20060032432 Bulk single crystal gallium nitride and method of making same |
02/16/2006 | US20060032431 High pressure crystal growth apparatuses and associated methods |
02/16/2006 | US20060032430 Method and apparatus for the measurement, orientation and fixation of at least one single crystal |
02/14/2006 | US6997987 Optical lithography fluoride crystal annealing furnace |
02/09/2006 | WO2006015185A2 GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER |
02/09/2006 | US20060027162 Crystallization apparatus, crystallization method, and phase modulation device |
02/09/2006 | US20060027161 Method for heat-treating silicon wafer and silicon wafer |
02/09/2006 | US20060027159 Silicon wafer production process and silicon wafer |
02/08/2006 | CN1240884C Amorphous silicon crystallizing method |
02/02/2006 | WO2006011389A1 METHOD FOR PRODUCING RE-Ba-Cu-O OXIDE SUPERCONDUCTOR |
02/02/2006 | WO2005007937A3 Annealing single crystal chemical vapor deposition diamonds |
02/02/2006 | WO2005007935A3 Tough diamonds and method of making thereof |
02/02/2006 | US20060021567 Apparatus for pulling single crystal |
02/02/2006 | US20060021565 GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
02/02/2006 | US20060021564 Nanostructures produced by phase-separation during growth of (iii-v )1-x(iv2)x alloys |
02/02/2006 | US20060021563 Systems and methods for generating images of crystals |
02/01/2006 | CN1729317A Method for forming carbon nanotubes |
02/01/2006 | CN1727526A Method for preparing microlite silicon |
02/01/2006 | CN1239756C Method for crystalizing amorphous silicon |
01/26/2006 | US20060016388 Domain epitaxy for thin film growth |
01/26/2006 | US20060016387 Silicon wafer, its manufacturing method, and its manufacturing apparatus |
01/24/2006 | US6989300 Method for forming semiconductor films at desired positions on a substrate |
01/19/2006 | US20060011131 SiC material, semiconductor device fabricating system and SiC material forming method |
01/19/2006 | US20060011130 Methods of growing epitaxial silicon |
01/19/2006 | US20060011129 Method for fabricating a compound semiconductor epitaxial wafer |
01/19/2006 | US20060011128 Homoepitaxial growth of SiC on low off-axis SiC wafers |
01/19/2006 | US20060011127 Process for producing diamond, graphite or mixture of diamond and graphite |
01/12/2006 | WO2006005018A2 Process for producing a crystalline silicon ingot |
01/12/2006 | WO2006004905A2 Systems and methods for generating images of crystals |
01/12/2006 | US20060005763 Method and apparatus for producing large, single-crystals of aluminum nitride |
01/12/2006 | CA2571119A1 Systems and methods for generating images of crystals |
01/11/2006 | CN1720356A Fabrication method for crystalline semiconductor films on foreign substrates |
01/05/2006 | US20060003584 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device |
01/05/2006 | US20060000409 Process for producing a crystalline silicon ingot |
01/05/2006 | US20060000408 Inorganic scintillator and process for its fabrication |
01/04/2006 | CN1234921C Method and apparatus for preparing poly crystals of S-Ga-Ag |
01/03/2006 | US6982001 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma |
12/29/2005 | US20050284360 Atomic layer deposition using electron bombardment |
12/22/2005 | WO2005121414A1 Deposition of buffer layers on textured metal surfaces |
12/22/2005 | US20050279278 Melter assembly and method for charging a crystal forming apparatus with molten source material |
12/22/2005 | US20050279276 Melter assembly and method for charging a crystal forming apparatus with molten source material |
12/20/2005 | US6977010 Apparatus for pulling single crystal by CZ method |
12/15/2005 | US20050277235 Methods of manufacturing semiconductor devices having single crystalline silicon layers and related semiconductor devices |
12/13/2005 | US6974501 Multi-layer articles and methods of making same |
12/08/2005 | US20050268841 Radiation detector |
12/08/2005 | US20050268840 Apparatus for pulling single crystal by CZ method |
12/07/2005 | EP1602131A1 Via and trench structures for semiconductor substrates bonded to metallic substrates |
12/01/2005 | US20050263065 Vapor assisted growth of gallium nitride |
12/01/2005 | US20050263064 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma |
11/30/2005 | EP1600043A2 Analytical furnace with predictive temperature control |
11/17/2005 | US20050255672 Method and resulting structure for manufacturing semiconductor substrates |
11/17/2005 | US20050252443 Epitaxy layer and method of forming the same |
11/02/2005 | CN1691275A Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus |
11/01/2005 | US6960490 Method and resulting structure for manufacturing semiconductor substrates |
10/13/2005 | US20050227453 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer |