Patents for C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968)
04/2009
04/08/2009CN201217712Y Polysilicon directional long crystal thermal field structure
04/07/2009US7514342 Method and apparatus for forming deposited film
04/01/2009CN101396632A Multi-stage absorption, regeneration and purification method of polysilicon tail gas
03/2009
03/26/2009WO2009036686A1 Method of manufacturing polycrystalline silicon for solar cell
03/25/2009CN101392408A Reactor for polycrystalline silicon and polycrystalline silicon production method
03/18/2009EP1793007B1 Method for producing unidirectionally solidified hydrogen storage alloy
03/11/2009EP2032746A1 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
03/11/2009CN101384510A Method for preparing granular polycrystalline silicon using fluidized bed reactor
03/10/2009US7501022 Methods of fabricating silicon carbide crystals
03/04/2009CN101378989A High-pressure fluidized bed reactor for preparing granular polycrystalline silicon
03/04/2009CN101378018A Method for developing SiGe material with low temperature using UHV/CVD
02/2009
02/18/2009CN201195768Y Decompression apparatus of polysilicon furnace
02/18/2009CN201195767Y Polysilicon ingot furnace
02/18/2009CN201195766Y Novel polysilicon furnace
02/18/2009CN201195764Y Polysilicon stove transmission device
02/18/2009CN201195763Y Polysilicon ingot furnace
02/12/2009US20090038536 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
02/10/2009US7488386 Atomic layer deposition methods and chemical vapor deposition methods
02/05/2009DE19653124B4 Synthese von phosphor-dotiertem Diamant Synthesis of phosphorus-doped diamond
02/05/2009DE102007035756A1 Production of silicon-blocks for photovoltaics e.g. solar cell, comprises arranging first silicon-seed and liquid silicon in container, melting the liquid silicon in surface turned to the silicon-seed, and solidifying the liquid silicon
02/04/2009CN101359101A Light irradiation apparatus and method, crystallization device and method, device, and light modulation element
01/2009
01/22/2009WO2009009982A1 Method for purifying polycrystalline silicon and solidification device used therein
01/21/2009CN201183850Y Guard board of polycrystalline silicon casting furnace copple
01/21/2009CN201183849Y Thermal field structure of polycrystalline silicon casting furnace having graphitic cooling block heat preservation strips
01/21/2009CN201183848Y Thermal field structure of polycrystalline silicon casting furnace having five layers of heat preservation strips
01/21/2009CN201183847Y Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip
01/21/2009CN201183846Y Thermal field structure of polycrystalline silicon casting furnace
01/21/2009CN100453711C Zn0 crystallite material, and preparation method
01/01/2009US20090004090 pressure difference between both sides of the reactor tube is maintained within a predetermined range, the fluidized bed reactor can be operated with long-term stability even at high pressures, satisfying various conditions required for preparing polycrystalline silicon based on fluidized bed process
01/01/2009US20090001329 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon
12/2008
12/31/2008CN101333681A Polysilicon casting furnace and control method
12/24/2008CN101328606A Polysilicon ingot furnace synchronous hoisting device
12/24/2008CN101328605A Method for producing solar energy polycrystal ribbon silicon by purifying impurity precipitated by float metallurgy melting
12/18/2008US20080311021 Apparatus for pulling single crystal by CZ method
12/18/2008US20080311019 Apparatus for pulling single crystal by CZ method
12/17/2008CN201165564Y Crystal grain size controllable polysilicon film preparation and detection device
12/17/2008CN201165563Y Graphitic heater for polysilicon casting ingot technology
12/17/2008CN101323973A Polysilicon directional long crystal thermal field
12/17/2008CN101323972A Polysilicon directional freezing equipment
12/16/2008US7465499 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
12/10/2008EP1689916B1 Scintillation substances (variants)
12/10/2008CN201162068Y Polysilicon ingot furnace
12/10/2008CN201162067Y Polysilicon producing furnace
12/10/2008CN201162066Y Energy conservation type polysilicon reduction furnace
12/10/2008CN201162065Y Novel polysilicon reduction furnace
12/10/2008CN201162064Y Device for manufacturing polysilicon
12/10/2008CN201162063Y Polysilicon ingot furnace with liftable thermal insulation cover
12/10/2008CN201162062Y Polysilicon ingot furnace with water-cooled double-electrode and flexible cable
12/10/2008CN101319366A Automatic control system and method for polysilicon ingot furnace
12/10/2008CN101319363A Method for preparing polysilicon
12/10/2008CN101319362A Method of preparing polysilicon film and preparing system
12/10/2008CN101319355A Method for preparing dish shaped large-crystal domain polysilicon with nickel solution fogdrop, product and application thereof
12/10/2008CN101319347A Method for crystal surface self-organizing growth of fine-nano-structure with femtosecond laser
12/10/2008CN101318654A Method for preparing high purity polysilicon particle with fluidized bed and bed fluidizing reactor
12/03/2008CN201158723Y Flame-proof heat preserving cover of high temperature furnace
12/03/2008CN100439554C Method of synthesizing a compound of the formula Mn*Axn, film of the compound and its use
11/2008
11/26/2008CN101311364A Process for preparing P-shaped zinc oxide semiconductor bulk material
11/26/2008CN101311358A Process for preparing zinc oxide nanometer wire array by femtosecond laser and device thereof
11/26/2008CN101311351A Polycrystalline silicon rod for floating zone method and a process for the production thereof
11/26/2008CN101311346A Method for manufacturing polysilicon
11/26/2008CN101311345A Method for preparing polysilicon and preparation device
11/26/2008CN101311344A Polysilicon film preparation with crystal particle dimension controllable and detection device
11/26/2008CN101311343A Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot
11/26/2008CN101311342A Fault handling process for temperature-controlling thermal couple of polysilicon ingot furnace
11/26/2008CN101311341A Vacuum pressure continuous control process for polysilicon ingot casting process and control system thereof
11/26/2008CN101311143A Method for preparing charcoal/charcoal air supply nozzle of high temperature furnace
11/26/2008CN101311113A Preparation device and preparation method of high purity polysilicon
11/26/2008CN100436660C Scintillation substances (variants)
11/20/2008WO2008138148A1 Nanocrystalline alloys of the fe3al(ru) type and use thereof optionally in nanocrystalline form for making electrodes for sodium chlorate synthesis
11/20/2008US20080282972 Method and mould for casting articles with a pre-determined crytalline orientation
11/19/2008CN201151753Y Graphite heat conducting block
11/19/2008CN101307487A Directional solidification method and its device for continuous production for polycrystalline silicon ingot
11/18/2008US7452790 Method of fabricating thin film transistor
11/15/2008CA2588906A1 Fe3al(ru) nanocrystalline alloys and use thereof in nanocrystalline form or not for the production of electrodes for the synthesis of sodium chlorate
11/12/2008EP1535309B1 Radiation detector
11/11/2008US7449134 crystallization of 4-dimethylamino-4-stilbazolium tosylate (DAST), useful as an electro-optical element
11/06/2008DE10341806B4 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Basisschicht eines heterobipolaren pnp Transistors A process for producing an epitaxial silicon-germanium base layer of a PNP transistor heterobipolaren
11/05/2008EP1986956A1 Method for preparing granular polycrystalline silicon using fluidized bed reactor
11/04/2008US7445674 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
11/04/2008US7445673 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
10/2008
10/30/2008DE102007020006A1 Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen Apparatus and method for the production of poly- or multicrystalline silicon, thereby produced mass block (ingot) and poly- or multicrystalline silicon wafers, and use for the production of solar cells
10/29/2008EP1984297A1 High-pressure fluidized bed reactor for preparing granular polycrystalline silicon
10/29/2008CN101295750A Metallic silicon solar battery underlay producing technique based on fusion casting method
10/29/2008CN101294305A Selenium selenium zinc compound photoresistor material
10/29/2008CN101294300A Novel technique for producing solar level polysilicon
10/28/2008US7442355 Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof
10/28/2008US7442252 Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
10/22/2008CN201138138Y Polycrystalline silicon segregating and cogging furnace without need of moving component
10/22/2008CN101289739A Procedure for polysilicon deposition
10/21/2008US7438760 Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
10/15/2008CN201133766Y Polycrystalline silicon fine ingot furnace adopting gradient temperature reduction
10/15/2008CN201133765Y Polycrystalline silicon segregation ingot furnace
10/15/2008CN101285122A Self-propagating combustion cyclonic reactor
10/14/2008US7435297 Molten-salt-based growth of group III nitrides
10/08/2008CN100424233C Prepn process of polycrystalline Zinc oxide film material
10/02/2008US20080241049 A single crystal diamond grown by microwave plasma chemical vapor deposition, annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa; enhanced optical characteristics
10/01/2008EP1974069A1 Symmetrical pulling of composite ribbons
10/01/2008CN201125281Y Germanium single crystal heat pressing deformation apparatus
09/2008
09/24/2008CN100420569C Free-standing (Al, Ga, In)N and parting method for forming same
09/18/2008DE102007010516A1 Polycrystalline origin identification involves determining product image of product with comparison picture of comparison product in polycrystalline structure with help of image evaluation
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