Patents for C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968)
04/2007
04/05/2007US20070074653 Apparatus for preparation of silicon crystals with reduced metal content
04/05/2007US20070074652 Method for epitaxy with low thermal budget and use thereof
04/05/2007US20070074651 (Al, Ga, In) N-based compound semiconductor and method of fabricating the same
04/04/2007EP1770190A1 METHOD FOR PRODUCING RE-Ba-Cu-O OXIDE SUPERCONDUCTOR
04/04/2007CN1942610A Ultrahard diamonds and method of making thereof
04/03/2007US7199015 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
04/03/2007US7198673 Optical lithography fluoride crystal annealing furnace
03/2007
03/29/2007WO2007035570A2 Method for epitaxial growth of silicon carbide
03/29/2007US20070068450 Novel nitrogen semiconductor compound and device fabricated using the same
03/29/2007US20070068449 Growing method of SiC single crystal
03/29/2007US20070068448 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
03/29/2007US20070068447 Method of manufacturing silicon wafer
03/29/2007US20070068446 Compound semiconductor single crystal and production process thereof
03/28/2007CN1936113A Low defect density, ideal oxygen precipitating silicon
03/28/2007CN1936112A 低缺陷浓度的硅 A low defect density silicon
03/28/2007CN1307690C Method for making polysilicon layer
03/27/2007US7195671 Thermal shield
03/22/2007WO2007033312A2 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
03/22/2007US20070062442 Apparatus for growing high quality silicon single crystal ingot and growing method using the same
03/22/2007US20070062441 Method for epitaxial growth of silicon carbide
03/22/2007US20070062440 Gallium nitride crystal substrate and method of producing same
03/22/2007US20070062439 Temperature Control Method of Epitaxial Growth Apparatus
03/22/2007US20070062438 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
03/21/2007CN1932086A Prepn process of polycrystalline Zinc oxide film material
03/20/2007US7192481 Radiation detector
03/15/2007US20070056507 Sublimation chamber for phase controlled sublimation
03/15/2007US20070056506 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
03/15/2007US20070056505 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal
03/15/2007US20070056504 Method and apparatus to produce single crystal ingot of uniform axial resistivity
03/13/2007US7189287 Atomic layer deposition using electron bombardment
03/08/2007WO2005122691A3 Crystal growth method and apparatus
03/08/2007US20070051303 Semiconductor single crystal manufacturing apparatus
03/08/2007US20070051302 Method of producing crystalline semiconductor material and method of fabricating semiconductor device
03/08/2007US20070051301 Method of manufacturing sic single crystal wafer
03/08/2007US20070051300 Synthesis of large homoepitaxial monocrystalline diamond
03/08/2007US20070051298 Method of searching for and generating high free energy forms
03/08/2007US20070051297 Silica glass crucible with barium-doped inner wall
03/08/2007US20070051296 Silica glass crucible with bubble-free and reduced bubble growth wall
03/06/2007US7186295 Quartz thin film
03/01/2007US20070044711 Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal
03/01/2007US20070044709 Silicon Wafer Surface Defect Evaluation Method
03/01/2007US20070044708 Ultrasonic sensor assembly and method
03/01/2007US20070044706 Method of forming a crystalline structure and a method of manufacturing a semiconductor device
02/2007
02/28/2007CN1920120A Thin sheet production method and thin sheet production device
02/28/2007CN1920119A Method of preparing nanocrystalline silicon thin film in high pressure heat filling hydrogen and special apparatus for the same
02/22/2007US20070039544 Method for casting polycrystalline silicon
02/20/2007US7180198 Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon
02/15/2007WO2007018555A2 Ultratough cvd single crystal diamond and three dimensional growth thereof
02/15/2007US20070034145 Single crystal of silicon carbide, and method and apparatus for producing the same
02/15/2007US20070034144 Oxide crystal growth apparatus and fabrication method using the same
02/15/2007US20070034143 Crystal growth apparatus and method of producing a crystal
02/15/2007US20070034142 Methods of forming nanocrystals
02/15/2007US20070034141 Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals
02/15/2007US20070034140 Screening and Crystallization Plates for Manual and High-Throughput Protein Crystal Growth
02/15/2007US20070034138 Method for growing silicon single crystal and silicon wafer
02/13/2007US7175709 Epitaxy layer and method of forming the same
02/08/2007WO2006124266A3 Method and apparatus for growing single-crystal metals
02/08/2007US20070028832 Manufacturing method of hydrogen-doped silicon single crystal
02/07/2007EP1749123A2 System for continuous growing of monocrystalline silicon
02/01/2007US20070025895 Protein crystallography dialysis chamber that enables off-site high throughput cocktail screen
02/01/2007US20070022947 Process for preparing p-n junctions having a p-type ZnO film
02/01/2007US20070022946 Recovering purified water and potassium chloride from spent basic hydrogen peroxide
02/01/2007US20070022945 Methods of fabricating silicon carbide crystals
02/01/2007US20070022944 Method for Manufacturing Boride Single Crystal and Substrate
02/01/2007US20070022943 A Silicon Single Crystal Ingot and Wafer, Growing Apparatus and Method Therof
02/01/2007US20070022942 Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot
01/2007
01/31/2007CN1906322A Device for depositing a polycrystalline silicon layer on a support
01/25/2007US20070020536 Laser beam pattern mask and crystallization method using the same
01/25/2007US20070017439 Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same
01/25/2007US20070017438 Method of forming dislocation-free strained thin films
01/25/2007US20070017437 Grown diamond mosaic separation
01/25/2007US20070017436 Process for growing silicon single crystal and process for producing silicon wafer
01/25/2007US20070017435 Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
01/25/2007US20070017434 Process for producing silicon single crystal
01/25/2007US20070017433 Process for producing single crystal and single crystal
01/24/2007CN1902341A Scintillation substances (variants)
01/18/2007WO2007008726A2 Use of surfactants to control unintentional dopant in semiconductors
01/18/2007US20070015069 mask includes multiple transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area; for laser illumination to convert amorphous silicon into polysilicon
01/18/2007US20070012243 Crucible or related object holder and method of manufacture
01/18/2007US20070012241 Methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses
01/18/2007US20070012240 Light emitting diode with at least two light emitting zones and method for manufacture
01/18/2007US20070012239 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
01/18/2007US20070012238 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
01/11/2007WO2007005438A2 Apparatuses and methods for detecting defects in semiconductor workpieces
01/11/2007WO2007004631A1 Method for preparing grain boundary character controlled polycrystal
01/11/2007US20070007242 Method and system for producing crystalline thin films with a uniform crystalline orientation
01/11/2007US20070006802 N-type bulk single crystal zinc oxide
01/11/2007US20070006801 Use of surfactants to control unintentional dopant in semiconductors
01/11/2007US20070006800 Methods of selectively forming an epitaxial semiconductor layer using ultra high vacuum chemical vapor deposition technique and batch-type ultra high vacuum chemical vapor deposition apparatus used therein
01/11/2007US20070006799 Silicon wafer support fixture with roughended surface
01/11/2007US20070006798 Systems and methods for forming strontium-and/or barium-containing layers
01/11/2007US20070006797 Lithium tantalate substrate and method for producing same
01/11/2007US20070006796 Crystallization apparatus and crystallization method
01/10/2007EP1440458B1 Method of semiconductor nanoparticle synthesis
01/04/2007US20070000435 Method of manufacturing a wafer
01/04/2007US20070000434 Apparatuses and methods for detecting defects in semiconductor workpieces
01/04/2007US20070000433 III-nitride semiconductor device fabrication
01/04/2007US20070000432 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal
01/04/2007US20070000431 Method of repairing a short defect and a method of fabricating a liquid crystal display device
01/04/2007US20070000430 Liquid crystal display device and fabrication method threof
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