C30B 28 - Production of homogeneous polycrystalline material with defined structure

Patents for C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968)
01/2007
01/04/2007	US20070000429 Method for producing single crystal and single crystal
01/02/2007	US7157067 Crystallization of a single crystal diamond grown by microwave plasma chemical vapor deposition; heat treatment; noncracking, nonfracturing; hardness
12/2006
12/28/2006	US20060288929 Polar surface preparation of nitride substrates
12/28/2006	US20060288928 Perovskite-based thin film structures on miscut semiconductor substrates
12/28/2006	US20060288926 Scintillator single crystal and production method of same
12/26/2006	US7153361 Production method of opto-electronic device array
12/21/2006	WO2006135662A2 Perovskite-based thin film structures on miscut semiconductor substrates
12/21/2006	WO2006005018A3 Process for producing a crystalline silicon ingot
12/21/2006	WO2005086962A3 System and method for fabricating a crystalline thin structure
12/21/2006	US20060283380 Semiconductor device and method of manufacturing the same
12/21/2006	US20060283379 Method for growing silicon single crystal and method for manufacturing silicon wafer
12/21/2006	US20060283378 Silicone single crystal production process
12/21/2006	US20060283377 Method for producing silicon single crystals and silicon single crystal produced thereby
12/21/2006	US20060283376 Apparatus for manufacturing semiconductor single crystal
12/21/2006	US20060283374 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties
12/21/2006	US20060283373 Method for growing silicon single crystal
12/19/2006	US7151007 Doped organic semiconductor materials and process for their preparation
12/14/2006	WO2006004905A8 Systems and methods for generating images of crystals
12/14/2006	US20060281322 Epitaxial semiconductor deposition methods and structures
12/14/2006	US20060278159 Nanostructures
12/12/2006	US7147712 Method of semiconductor nanoparticle synthesis
12/07/2006	US20060272574 Methods for manufacturing integrated circuits
12/07/2006	US20060272573 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
12/07/2006	US20060272572 Nitride semiconductor substrate and method of producing same
12/07/2006	US20060272571 Shaped thermally stable polycrystalline material and associated methods of manufacture
12/07/2006	US20060272570 Method for producing a single crystal
12/06/2006	CN1873062A Method for preparing polysilicon in high purity in use for solar cell
11/2006
11/30/2006	US20060266282 Variable temperature deposition methods
11/30/2006	US20060266281 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
11/30/2006	US20060266280 Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates
11/30/2006	US20060266279 Method of producing single crystal
11/30/2006	US20060266278 Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal
11/30/2006	US20060266277 Single crystal heat treatment method
11/30/2006	US20060266276 Single crystal heat treatment method
11/29/2006	CN1286716C Method for growing carbon nano tube
11/23/2006	US20060260538 Use of Cl2 and/or HCl during silicon epitaxial film formation
11/23/2006	US20060260537 Wet pet food products and method for preparation
11/23/2006	US20060260536 Vessel for growing a compound semiconductor single crystal, compound semiconductor single crystal, and process for fabricating the same
11/16/2006	US20060254507 Silicon carbide single crystal and production thereof
11/16/2006	US20060254506 Methods of depositing an elemental silicon-comprising material over a substrate
11/16/2006	US20060254505 Method and apparatus for the production of silicon carbide crystals
11/16/2006	US20060254502 Printable electric circuits, electronic components and method of forming the same
11/16/2006	US20060254501 Nanoscale junction arrays and methods for making same
11/16/2006	US20060254500 Line scan sequential lateral solidification of thin films
11/16/2006	US20060254499 Method For Manufacturing Nitrogen-Doped Silicon Single Crystal
11/16/2006	US20060254498 Silicon single crystal, and process for producing it
11/14/2006	US7135072 Methods of fabricating silicon carbide crystals
11/09/2006	US20060252271 Atomic layer deposition using photo-enhanced bond reconfiguration
11/09/2006	US20060249075 Semiconductor chip with a porous single crystal layer and manufacturing method of the same
11/09/2006	US20060249074 Method for supplying hydrogen gas in silicon single-crystal growth, and method for manufacturing silicon single-crystal
11/09/2006	US20060249073 Method of heat treatment and heat treatment apparatus
11/09/2006	US20060249072 Method of synthesizing a fluoride growth material for improved outgassing
11/09/2006	US20060249071 Method and apparatus for crystal growth
11/07/2006	US7132060 Scintillation substances (variants)
11/02/2006	US20060243196 Methods for epitaxial silicon growth
11/02/2006	US20060243195 Epitaxy with compliant layers of group-V species
11/02/2006	US20060243194 Method of forming a crystalline phase material
11/02/2006	US20060243193 Thin film transistor and method of fabricating the same
11/02/2006	US20060243192 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal
11/01/2006	CN1854353A Low defect density epitaxial wafer and a process for the preparation thereof
10/2006
10/26/2006	WO2006113539A2 Semiconductor devices having gallium nitride epilayers on diamond substrates
10/26/2006	US20060236923 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
10/26/2006	US20060236922 Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device
10/26/2006	US20060236921 Method of cleaning a substrate surface from a crystal nucleus
10/26/2006	US20060236920 Fabrication method of semiconductor device
10/26/2006	US20060236919 Process for producing single crystal and silicon crystal wafer
10/26/2006	US20060236918 Interfused nanocrystals and method of preparing the same
10/26/2006	US20060236916 Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof
10/25/2006	CN1853001A Annealing single crystal chemical vapor depositon diamonds
10/25/2006	CN1851926A Polysilicon film with smooth surface and mfg. method
10/19/2006	WO2005084172A3 Carbon nanostructures and methods of making and using the same
10/19/2006	US20060231017 Atomic layer deposition methods and chemical vapor deposition methods
10/19/2006	US20060231016 Deposition apparatuses
10/19/2006	US20060231015 Single crystalline diamond and producing method thereof
10/18/2006	CN1848365A Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same
10/18/2006	CN1280455C Low defect density silicon
10/18/2006	CN1280454C Low defect density, ideal oxygen precipitating silicon
10/12/2006	WO2006107926A2 Line scan sequential lateral solidification of thin films
10/12/2006	WO2006107769A2 Solidification of crystalline silicon from reusable crucible molds
10/12/2006	US20060225645 Three inch silicon carbide wafer with low warp, bow, and TTV
10/12/2006	US20060225644 Vertical group III-nitride light emitting device and method for manufacturing the same
10/12/2006	US20060225643 AlGaN substrate and production method thereof
10/12/2006	US20060225642 Method of forming semiconductor crystal
10/12/2006	US20060225641 Method for the production of monocrystalline structures and component
10/12/2006	US20060225640 Method for manufacturing silicon single crystal, and silicon wafer
10/12/2006	US20060225639 Method for growing silicon single crystal, and silicon wafer
10/05/2006	US20060219162 Solidification of crystalline silicon from reusable crucible molds
10/05/2006	US20060219160 Method and system for forming a variable thickness seed layer
10/05/2006	US20060219159 Templated semiconductor particles and methods of making
10/05/2006	US20060219158 Body having a smooth diamond layer, device and method therefor
10/05/2006	US20060219157 Oxide films containing titanium
10/03/2006	US7115521 Epitaxial semiconductor deposition methods and structures
10/03/2006	US7115241 Ultrahard diamonds and method of making thereof
10/03/2006	US7115166 Systems and methods for forming strontium- and/or barium-containing layers
09/2006
09/28/2006	US20060213430 Seeded single crystal silicon carbide growth and resulting crystals
09/28/2006	US20060213429 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
09/28/2006	US20060213427 Method for manufacturing granular silicon crystal
09/28/2006	US20060213426 Structure, magnetic recording medium, and method of producing the same
09/28/2006	US20060213424 Silicon wafer and process for the heat treatment of a silicon wafer
09/28/2006	DE102005013410A1 Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen Apparatus and method for crystallizing non-ferrous metals

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