Patents for C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968)
09/2008
09/10/2008CN101263248A Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
09/10/2008CN100418246C Doped organic semiconductor materials and process for their preparation
09/09/2008US7422631 Mould parts of silicon nitride and method for producing such mould parts
09/04/2008US20080210157 Systems and methods for forming strontium-and/or barium-containing layers
09/02/2008CA2622813A1 Capillary transport of nanoparticles or microparticles to form an ordered structure
08/2008
08/28/2008DE102007010563A1 Selektives Wachstum von polykristallinem siliziumhaltigen Halbleitermaterial auf siliziumhaltiger Halbleiteroberfläche Selective growth of polycrystalline silicon-containing semiconductor material of silicon semiconductor surface
08/14/2008US20080190356 Method and apparatus for producing single crystalline diamonds
08/13/2008CN101240448A Vacuum purifying furnace specially used for metal silicon/silicon dioxide and purifying method thereof
08/13/2008CN101239723A Plasma producing method and device for polycrystalline silicon
08/06/2008EP1953801A1 Radiation detector
08/06/2008CN101235535A Crystal growing method and device
08/06/2008CN101235534A High-pressure solid phase crystallization method
07/2008
07/29/2008US7404670 Analytical furnace with predictive temperature control
07/24/2008WO2007094607A8 Method for preparing granular polycrystalline silicon using fluidized bed reactor
07/22/2008US7402504 Epitaxial semiconductor deposition methods and structures
07/16/2008CN100402421C Tough diamonds and method of making thereof
07/03/2008US20080157095 Semiconductor Devices Having Single Crystalline Silicon Layers
07/03/2008DE112006002430T5 Verfahren zur Herstellung von Super-Gittern unter Verwendung von abwechselnden Hoch und Niedrig-Temperatur-Schichten zum Sperren von parasitären Strompfaden A process for the production of super-lattices using alternating high and low-temperature layers to block parasitic current paths
07/02/2008CN101213318A Method and apparatus for growing single-crystal metals
07/02/2008CN100399600C Rapid circulating crystallizing device and method for preparing nanometer crystal material
06/2008
06/18/2008EP1931818A2 Method for epitaxial growth of silicon carbide
06/18/2008CN101200809A Method for synthesizing beryllium fluoroborate single-phase polycrystalline powder
06/12/2008US20080134958 System For Continuous Growing of Monocrystalline Silicon
06/12/2008US20080134957 Powder metallurgy crucible for aluminum nitride crystal growth
06/11/2008CN101195927A Method for producing large area polysilicon
06/10/2008US7384481 Method of forming a rare-earth dielectric layer
06/04/2008CN100392805C Method for crystallizing silicon using a ramp shaped laser beam
06/03/2008CA2476840C Method of attaching an end seal to manufactured seeds
05/2008
05/29/2008WO2008063715A2 Crystal growth system and method for lead-contained compositions using batch auto-feeding
05/28/2008CN101186329A Method for preparing micron-level ZnO of octahedral structure
05/27/2008US7377978 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
05/22/2008US20080115718 Polysilicon thin film transistor array panel and manufacturing method thereof
05/13/2008US7371281 Silicon carbide single crystal and method and apparatus for producing the same
04/2008
04/30/2008CN101168474A Method for manufacturing polycrystalline silicon thin film at low temperature
04/29/2008US7364955 Methods of manufacturing semiconductor devices having single crystalline silicon layers
04/24/2008WO2008047907A1 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element
04/24/2008US20080092803 Patterned atomic layer epitaxy
04/22/2008US7361220 Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
04/22/2008US7361217 Method for crystallising a melamine melt
04/10/2008DE102006045780A1 Mischkristalle der Form I und Form II der Acetylsalicylsäure Mixed crystals of Form I and Form II of the acetylsalicylic acid
04/01/2008US7351993 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
04/01/2008US7351283 System and method for fabricating a crystalline thin structure
03/2008
03/27/2008DE102006017622B4 Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium Method and apparatus for the production of multicrystalline silicon
03/25/2008US7348226 Method of forming lattice-matched structure on silicon and structure formed thereby
03/18/2008US7344594 Melter assembly and method for charging a crystal forming apparatus with molten source material
03/12/2008CN100375233C Fabrication method for polycrystalline silicon thin film and display device fabricated using the same
03/06/2008US20080053371 Silicon carbide manufacturing device and method of manufacturing silicon carbide
03/05/2008CN201031264Y Growth device of multiple compound semi-conductor single-crystal
03/05/2008CN100373562C Method for conventing non-crystalline silicon into polycrystal silicon
02/2008
02/27/2008EP1689916A4 Scintillation substances (variants)
02/26/2008US7335259 Growth of single crystal nanowires
02/20/2008EP1888802A2 Method and apparatus for growing single-crystal metals
02/20/2008CN101128626A Preparation of suspensions
02/05/2008US7326652 Atomic layer deposition using photo-enhanced bond reconfiguration
02/05/2008US7326598 Method of fabricating polycrystalline silicon
02/05/2008US7326293 Patterned atomic layer epitaxy
01/2008
01/31/2008US20080023693 Methods, devices and compositions for depositing and orienting nanostructures
01/31/2008US20080022925 Method for marking a crystalline material using cathodoluminescence
01/31/2008DE102005013410B4 Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen Apparatus and method for crystallizing non-ferrous metals
01/31/2008DE102004042343B4 Verfahren und Vorrichtung zur Modifikation von amorphen Halbleitern mittels Laserstrahlung Method and apparatus for modification of amorphous semiconductors by means of laser radiation
01/17/2008US20080011223 Solid solution wide bandgap semiconductor materials
01/16/2008CN100362143C Method of preparing nanocrystalline silicon thin film in high pressure heat filling hydrogen and special apparatus for the same
01/10/2008US20080010707 Ambient environment nanowire sensor
01/10/2008US20080006200 Method and apparatus for producing large, single-crystals of aluminum nitride
01/10/2008DE10329332B4 Kristallisationsverfahren und Maske zum sequentiellen Querverfestigen sowie Vorrichtung diese benutzend Crystallization process and mask for sequential cross solidifying and this device benutzend
01/08/2008US7317237 Photovoltaic conversion device and method of manufacturing the device
01/08/2008US7316746 Crystals for a semiconductor radiation detector and method for making the crystals
01/03/2008US20080003786 Large area, uniformly low dislocation density gan substrate and process for making the same
12/2007
12/27/2007DE102006028243A1 Device for crystallizing an amorphous silicon layer on a substrate, for the production of liquid crystal display, comprises an excimer laser, a mask, an imaging objective for imaging the mask on the substrate and a deflector for laser ray
12/26/2007CN101092753A Explosion proof type device with multiple temperature areas for synthesizing polycrystal and method
12/26/2007CN101092742A Method for preparing no cut crystallitic polysilicon chip in use for high performance solar batteries
12/26/2007CN101092741A Method for preparing big ingot of polysilicon in level of solar energy
12/26/2007CN101092740A Method for purifying polysilicon, and solidification device
12/26/2007CN100357500C Method for preparing microlite silicon
12/20/2007US20070290408 Annealing single crystal chemical vapor deposition diamonds
12/19/2007CN101089233A Manufacturing equipment for polysilicon ingot
12/19/2007CN100356506C Crystal mask, amorphous silicon crystallization method and method of manufacturing array base plate using same
12/18/2007US7309477 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
12/18/2007US7309476 Diamondoid-based components in nanoscale construction
12/18/2007US7309392 Lithium niobate substrate and method of producing the same
12/13/2007DE102004024924B4 Verfahren zum Herstellen polykristallinen Siliciums, Verfahren zum Herstellen einer Ausrichtungsmarkierung, sowie Verfahren zum Herstellen eines Schaltelements A method for producing polycrystalline silicon, methods of making an alignment mark, as well as methods for producing a switching element
12/06/2007DE102006023074A1 Organic field effect transistor, useful in electronic circuit, comprises a semiconducting layer partially containing a fullerene derivative with a carbon cluster and a substituent bound to the carbon cluster over a cyclopropane ring
12/04/2007US7303990 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device
12/04/2007US7303632 Vapor assisted growth of gallium nitride
11/2007
11/27/2007US7300858 Laser crystallization and selective patterning using multiple beamlets
11/27/2007US7300516 Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device
11/22/2007WO2006094313A3 Forming method for polymeric laminated wafers comprising different film materials
11/22/2007US20070266934 Method of forming a silicon dioxide film
11/22/2007US20070266933 Manufacturing method of semiconductor device
11/21/2007CN101076618A System for continuous growing of monocrystalline silicon
11/21/2007CN101074490A Method for producing spherical, tie-shaped and octahedral polycrystalline Ce0.6Zr0.3Y0.1O2 particles of um sizes
11/15/2007WO2007035570A3 Method for epitaxial growth of silicon carbide
11/15/2007US20070261631 Method for Growing Epitaxial Crystal
11/14/2007EP1448804B1 METHOD OF SYNTHESIZING A COMPOUND OF THE FORMULA M sb n+1 /sb AX sb n /sb , FILM OF THE COMPOUND AND ITS USE
11/14/2007CN101070621A Low defect density, self-interstitial dominated silicon
11/08/2007US20070259112 Gas manifolds for use during epitaxial film formation
11/08/2007US20070256625 Apparatus for pulling single crystal by CZ method
11/07/2007EP1425110A4 A method of depositing an inorganic film on an organic polymer
11/06/2007US7291224 Covering assembly for crucible used for evaporation of raw materials
11/01/2007US20070251444 PEALD Deposition of a Silicon-Based Material
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