Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
08/2003
08/21/2003US20030155576 Luminescent diode
08/21/2003US20030155575 III nitride compound semiconductor element an electrode forming method
08/21/2003US20030155574 Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbide
08/20/2003EP1336953A2 Active matrix electroluminescent display with two tft's and storage capacitor
08/20/2003EP1236273B1 High voltage hybrid circuit
08/20/2003EP1051582B1 Lighting fixture
08/20/2003CN2567786Y High-power light dipolar body covered by cooling structure
08/20/2003CN2567785Y Light dipolar body covered by cooling device
08/20/2003CN2567784Y Support structure for light-emitting diode
08/20/2003CN2567783Y LED module with sky shade
08/20/2003CN2567782Y High-brightness white-light diode white-light source
08/20/2003CN1437774A Thermal treatment of solution-processed organic electroactive layer in organic electronic device
08/20/2003CN1437770A High-radiance LED chip and method for producing the same
08/20/2003CN1437271A Light emitting diode
08/20/2003CN1437267A Semiconductor device and producing method thereof
08/20/2003CN1437225A Dry itching process for gallium nitrid compound semiconductor, etc.
08/20/2003CN1118789C LED dot matrix display device
08/19/2003US6608334 Stably forming sealant; transfer molding
08/19/2003US6608332 Light emitting device and display
08/19/2003US6608330 Light emitting device
08/19/2003US6608329 Purplish pink light emitting diode
08/19/2003US6608328 Semiconductor light emitting diode on a misoriented substrate
08/19/2003US6608327 Gallium nitride semiconductor structure including laterally offset patterned layers
08/19/2003US6607932 High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
08/19/2003US6607931 Method of producing an optically transparent substrate and method of producing a light-emitting semiconductor chip
08/19/2003US6607829 Tellurium-containing nanocrystalline materials
08/19/2003US6607595 Method for producing a light-emitting semiconductor device
08/19/2003US6607286 Lens and lens cap with sawtooth portion for light emitting diode
08/14/2003WO2003067934A2 Controlled lighting methods and apparatus
08/14/2003WO2003067637A2 Methods of treating a silicon carbide substrate for improved epitaxial deposition
08/14/2003WO2003025978A3 Method for separating two joined layers of material
08/14/2003US20030153112 Method for manufacturing light-emitting device using a group lll nitride compound semiconductor
08/14/2003US20030153108 Plastic packaging of LED arrays
08/14/2003US20030152723 Moisture sorbing device for screens comprising organic light emitting diodes and process for the manufacture thereof
08/14/2003US20030152340 Optical module
08/14/2003US20030152228 Single photon source based on transmitters with selectively distributed frequencies
08/14/2003US20030151818 Package for optical components
08/14/2003US20030151746 Means for illuminating a measurement surface and device and method for determining the visual properties of objects
08/14/2003US20030151361 Light emitting diode
08/14/2003US20030151357 Group III nitride compound semiconductor light emitting element
08/14/2003US20030151343 Method of producing a lamp
08/14/2003US20030151124 Integrated circuit device
08/14/2003US20030151117 Semiconductor polymers, method for the production thereof and an optoelectronic component
08/14/2003US20030151107 Optoelectronic material, device using the same and method for manufacuring optoelectronic material
08/14/2003US20030151060 Semiconductor device having a fuse and method of forming thereof
08/14/2003US20030151058 Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
08/14/2003US20030151044 Light emitting device
08/14/2003US20030151042 Polarization field enhanced tunnel structures
08/14/2003US20030150843 Crystal layer separation method, laser irradiation method and method of fabricating devices using the same
08/14/2003US20030150384 Aperture masks for circuit fabrication
08/14/2003US20030150376 Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials
08/14/2003CA2474883A1 Methods of treating a silicon carbide substrate for improved epitaxial deposition
08/13/2003EP1335435A2 Semiconductor Light-Emitting Devices
08/13/2003EP1335434A1 Nitride semiconductor light emitting element and optical device containing it
08/13/2003EP1335044A1 Zinc oxide semiconductor material
08/13/2003EP1334951A1 Process for preparing nanocrystalline material
08/13/2003EP1334524A1 Luminescent diode with high decoupling efficiency
08/13/2003EP1334523A2 IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs
08/13/2003EP1334162A2 Lanthanide complexes for phosphor applications
08/13/2003EP1169668A4 Indicators and illuminators using a semiconductor radiation emitter package
08/13/2003EP1074049A4 Method and apparatus for distributing an optical clock in an integrated circuit
08/13/2003CN2566467Y Luminous dipolar body with netal disk
08/13/2003CN2566105Y Integrated diode lighting spot
08/13/2003CN1436375A Group Ôàó nitride compound semiconductor device
08/13/2003CN1436374A Light source device using LED, and method of producing same
08/13/2003CN1436028A Organic electroluminescent device and producing method thereof
08/13/2003CN1435898A Semiconductor light-emitting component and mfg. method thereof
08/13/2003CN1435892A Semiconductor device and mfg. method thereof
08/12/2003US6606333 Semiconductor photonic device
08/12/2003US6606199 Graded thickness optical element and method of manufacture therefor
08/12/2003US6606180 Light beam scanning device
08/12/2003US6605832 Semiconductor structures having reduced contact resistance
08/12/2003US6605486 Bipolar transistor, semiconductor light emitting device and semiconductor device
08/12/2003US6604971 Fabrication of LED lamps by controlled deposition of a suspension media
08/07/2003WO2003065526A1 Quantum well structure and semiconductor element using it and production method of semiconductor element
08/07/2003WO2003065465A2 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
08/07/2003WO2003065464A1 Nitride semiconductor device having support substrate and its manufacturing method
08/07/2003WO2003065457A2 Cluster packaging of light emitting diodes
08/07/2003WO2003065429A1 GaN COMPOUND SEMICONDUCTOR CRYSTAL MAKING METHOD
08/07/2003WO2003065420A2 Method for producing a semiconductor element
08/07/2003WO2002013342A3 Silicon wafer with embedded optoelectronic material for monolithic oeic
08/07/2003US20030147617 Semiconductor optical devices with differential grating structure and method for manufacturing the same
08/07/2003US20030147448 Stripe type semiconductor light emitting element having InGan active layer, combined with optical resonator including wavelength selection element
08/07/2003US20030147252 Front lighting system for a motor vehicle
08/07/2003US20030147251 Long remaining illuminant source transforming wavelength
08/07/2003US20030146690 Led-based white-light emitting lighting unit
08/07/2003US20030146485 Method of etching an object, method of repairing pattern, nitride pattern and semiconductor device
08/07/2003US20030146445 Electrode structure of LED and manufacturing of the same
08/07/2003US20030146444 Group III-V compound semiconductor and group III-V compound semiconductor device using the same
08/07/2003US20030146442 Optical devices
08/07/2003US20030146438 Light emitting diode having a composite upper electrode
08/07/2003US20030146411 Phosphor containing a Group 2a phosphate; light sources
08/07/2003US20030145783 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
08/07/2003DE20214521U1 Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile
08/07/2003CA2754097A1 Nitride semiconductor device having support substrate and its manufacturing method
08/07/2003CA2473722A1 Cluster packaging of light emitting diodes
08/06/2003EP1333709A2 Supporting device for discrete electric component
08/06/2003EP1333478A1 Method for manufacturing gallium nitride compound semiconductor element and gallium nitride compound semiconductor element
08/06/2003EP1332645A1 Led power source
08/06/2003EP1332521A1 Radiation-emitting chip