Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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11/06/1991 | EP0455087A1 Method of forming a silicon wafer with a chip separating structure and single crystal layer sections |
11/06/1991 | EP0454981A2 A static random access split-emitter memory cell array |
11/06/1991 | EP0454902A2 Monolithically integrated circuit with DFB laser diode, optical switch and waveguide connections |
11/06/1991 | EP0454891A1 Light emitting diode array |
11/06/1991 | EP0454859A1 Semiconducteur integrated circuit |
11/05/1991 | US5063581 Semiconductor imaging device having a plurality of photodiodes and charge coupled devices |
11/05/1991 | US5063449 Solid-state image sensor employing a gate and diode for bias charge injection |
11/05/1991 | US5063431 Silicon oxynitride, silicon oxide |
11/05/1991 | US5063430 Semiconductor integrated circuit device having standard cells including internal wiring region |
11/05/1991 | US5063429 High density input/output cell arrangement for integrated circuits |
11/05/1991 | US5063426 InP/InGaAs monolithic integrated photodetector and heterojunction bipolar transistor |
11/05/1991 | US5063425 Semiconductor memory device with capacitor over non-volatile memory cell gate structure |
11/05/1991 | US5063424 Uprom memory cell integrable with a tablecloth matrix eprom |
11/05/1991 | US5063422 Devices having shallow junctions |
11/05/1991 | US5063420 Method for making an LED array |
11/05/1991 | US5063313 Delay circuit employing different threshold fet's |
11/05/1991 | US5063308 Output driver with static and transient parts |
11/05/1991 | US5063307 Insulated gate transistor devices with temperature and current sensor |
11/05/1991 | US5063286 Line image sensor with plural elements arranged at a predetermined pitch according to thermal expansion |
11/05/1991 | US5063176 Fabrication of contact hole using an etch barrier layer |
11/05/1991 | US5063170 Semiconductor integrated circuit device and a method of producing the same |
11/05/1991 | US5063113 Substrate having semiconductor-on-insulator structure with gettering sites and production method thereof |
11/05/1991 | US5062690 Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links |
11/02/1991 | WO1991017575A2 Optoelectronic device |
10/31/1991 | WO1991016731A1 Semiconductor device having ferroelectric material and method of producing the same |
10/31/1991 | WO1991016729A1 An electro-optic device |
10/31/1991 | WO1991016728A1 Substrate structure of a semiconductor device |
10/31/1991 | WO1991016656A1 Semiconductor device provided with circuit cell and array, and data input-output device |
10/31/1991 | DE4113733A1 Field-effect transistor for dynamic memory - uses asymmetric source, drain and isolation layers to minimise substrate defects and channel pinch-off effect |
10/30/1991 | EP0454579A2 Non-volatile semiconductor memory device having EEPROM cell, dummy cell and sense circuit for increasing reliability and enabling one-bit operation |
10/30/1991 | EP0454352A1 Configurable logic array |
10/30/1991 | EP0454343A2 Logic element and article comprising the element |
10/30/1991 | EP0454319A1 N-channel clamp for ESD protection in self-aligned silicided CMOS process |
10/30/1991 | EP0454170A2 Step-down unit incorporated in large scale integrated circuit |
10/30/1991 | EP0454134A2 Semiconductor device |
10/30/1991 | EP0454051A2 Program element for use in redundancy technique for semiconductor memory device, and method of fabricating a semiconductor memory device having the same |
10/30/1991 | EP0454020A2 Semiconductor memory device and method of manufacturing the same |
10/30/1991 | EP0453998A1 Semiconductor memory device having a bit line constituted by a semiconductor layer |
10/30/1991 | EP0453997A1 Semiconductor memory device |
10/30/1991 | EP0453961A2 SRAM using E/R memory cells that help decrease the software error rate |
10/30/1991 | EP0453959A2 Semiconductor memory cell |
10/30/1991 | EP0453644A2 Method of making a hole in a semiconductor layer structure and its use in manufacturing contact holes |
10/30/1991 | EP0453612A1 Light emitting diode array |
10/29/1991 | US5062128 Timer control with selectable frequency divider |
10/29/1991 | US5062115 High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays |
10/29/1991 | US5062077 Dynamic type semiconductor memory device |
10/29/1991 | US5061986 Self-aligned extended base contact for a bipolar transistor having reduced cell size and improved electrical characteristics |
10/29/1991 | US5061983 Semiconductor device having a metal silicide layer connecting two semiconductors |
10/29/1991 | US5061982 VLSI triple-diffused polysilicon bipolar transistor structure |
10/29/1991 | US5061981 Double diffused CMOS with Schottky to drain contacts |
10/29/1991 | US5061980 Semiconductor integrated circuit device |
10/29/1991 | US5061979 Semiconductor photoelectric device having a matrix wiring section |
10/29/1991 | US5061978 Semiconductor photosensing device with light shield |
10/29/1991 | US5061974 Semiconductor light-emitting device of array type |
10/29/1991 | US5061651 Method of making dram cell with stacked capacitor |
10/29/1991 | US5061650 Method for formation of a stacked capacitor |
10/29/1991 | US5061649 Field effect transistor with lightly doped drain structure and method for manufacturing the same |
10/29/1991 | US5061645 Method of manufacturing a bipolar transistor |
10/29/1991 | US5061642 Method of manufacturing semiconductor on insulator |
10/29/1991 | CA1291579C Method of isolating functional regions of an integrated circuit |
10/29/1991 | CA1291577C Structure and process for fabricating complementary vertical transistormemory cell |
10/29/1991 | CA1291556C Integrated semiconductor arrangement of the coupling type between a photodetector and a light wave guide |
10/29/1991 | CA1291554C Radiation-sensitive semiconductor device |
10/24/1991 | DE4033141A1 Construction of MOS integrated circuit for use at low temperature - has depletion transistors with gate-electrode which has low work function and enhancement devices using high work function material |
10/23/1991 | EP0453424A1 An integrated circuit with screen arrangement and a method for its manufacture |
10/23/1991 | EP0453324A2 Active matrix display device with thin film transistors structure |
10/23/1991 | EP0453279A1 Semi-conductor integrated circuit |
10/23/1991 | EP0453070A2 Method of manufacturing an intelligent power semiconductor device |
10/23/1991 | EP0453026A2 Process for forming a buried drain or collector region in monolithic semiconductor devices |
10/23/1991 | EP0452967A2 Hysteresis comparator |
10/23/1991 | EP0452919A2 Bi-MOS semiconductor integrated circuit |
10/23/1991 | EP0452874A2 MOS semiconductor device |
10/23/1991 | EP0452817A1 Semiconductor device with MOS-transistors and method of manufacturing the same |
10/23/1991 | EP0452801A2 Semiconductor device having light receiving element and method of producing the same |
10/23/1991 | EP0452724A2 Circuit and method for erasing EEPROM memory arrays |
10/23/1991 | EP0452720A2 A semiconductor structure and method of its manufacture |
10/23/1991 | EP0452662A1 Isolated semiconductor macro circuit |
10/23/1991 | EP0452648A1 Stacked bit line architecture for high density cross-point memory cell array |
10/23/1991 | EP0452588A1 Solar cell and method for manufacturing the same |
10/22/1991 | US5060236 Semiconductor light emission system |
10/22/1991 | US5060199 Semiconductor device with component circuits under symmetric influence of undesirable turbulence |
10/22/1991 | US5060195 Hot electron programmable, tunnel electron erasable contactless EEPROM |
10/22/1991 | US5060194 Semiconductor memory device having a bicmos memory cell |
10/22/1991 | US5060191 Ferroelectric memory |
10/22/1991 | US5060190 Read only memory with write operation using mask |
10/22/1991 | US5060084 Single substrate semiconductor device for image sensing and printing |
10/22/1991 | US5060071 Full-size optical sensor device having improved driving means |
10/22/1991 | US5060070 Solid state image sensor having low and high level signal component detectors |
10/22/1991 | US5060050 Semiconductor integrated circuit device |
10/22/1991 | US5060046 Semiconductor integrated circuit device having enlarged cells formed on ends of basic cell arrays |
10/22/1991 | US5060045 Semiconductor integrated circuit device and method of manufacturing the same |
10/22/1991 | US5060044 Integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias |
10/22/1991 | US5060042 Photoelectric conversion apparatus with reresh voltage |
10/22/1991 | US5060040 Photoelectric conversion apparatus |
10/22/1991 | US5060038 Charge sweep solid-state image sensor |
10/22/1991 | US5060037 Output buffer with enhanced electrostatic discharge protection |
10/22/1991 | US5060035 Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure |
10/22/1991 | US5060034 Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1 |
10/22/1991 | US5060031 Integrated circuits; lower gate leakage |
10/22/1991 | US5060027 Light emitting diode array with aligned solder bumps |