Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
01/1992
01/07/1992US5078498 Two-transistor programmable memory cell with a vertical floating gate transistor
01/07/1992CA1294063C Thin film forming device
01/07/1992CA1294062C Integrated circuit die with resistive substrate isolation of multiple circuits
01/07/1992CA1294061C Process for fabricating self-aligned silicide lightly doped drain mos devices
01/07/1992CA1293879C Color filter arrays
01/02/1992EP0463972A1 Method of making an electric contact on an active element of an MIS integrated circuit
01/02/1992EP0463817A2 Gain cell structure for DRAM and fabrication process thereof
01/02/1992EP0463741A2 Method of manufacturing a semiconductor memory device containing a capacitor
01/02/1992EP0463623A2 Nonvolatile semiconductor memory circuit
01/02/1992EP0463617A2 Semiconductor memory device
01/02/1992EP0463580A2 Non-volatile semiconductor memory device
01/02/1992EP0463569A2 Semiconductor optical amplifying apparatus
01/02/1992EP0463545A2 Substrate bias generator for semiconductor devices
01/02/1992EP0463511A2 Split gate EPROM cell using polysilicon spacers
01/02/1992EP0463510A2 High density stacked gate EPROM split cell with bit line reach-through and interruption immunity
01/02/1992EP0463459A1 Method for fabricating a mesa transistor-trench capacitor memory cell structure
01/02/1992EP0463455A2 Solid-state image pickup device, process for its manufacture, and method of driving the device
01/02/1992EP0463389A1 Structure and fabrication method for a double trench memory cell device
01/02/1992EP0463378A2 An electrically-erasable, electrically-programmable read-only memory cell with a selectable threshold voltage and methods for its use
01/02/1992EP0463372A2 Improved architecture and process for integrating DMD with control circuit substrates
01/02/1992EP0463174A1 Method of manufacturing semiconductor device
01/02/1992EP0463026A1 Configurable cellular array.
01/01/1992CN1057547A Integrated bipolar and cmos transistor fabrication process
12/1991
12/31/1991US5077691 Flash EEPROM array with negative gate voltage erase operation
12/31/1991US5077688 Semiconductor memory device having improved memory cells provided with cylindrical type capacitors
12/31/1991US5077592 Front-illuminated CCD with open pinned-phase region and two-phase transfer gate regions
12/31/1991US5077591 Electrostatic discharge protection for semiconductor input devices
12/31/1991US5077587 Light-emitting diode with anti-reflection layer optimization
12/31/1991US5077586 Vdmos/logic integrated circuit comprising a diode
12/31/1991US5077521 Supply connection integrity monitor
12/31/1991US5077518 Source voltage control circuit
12/31/1991US5077495 Row decoder for a semiconductor memory device with fast turn-off
12/31/1991US5077493 Wired logic circuit for use in gate array integrated circuit
12/31/1991US5077492 Bicmos circuitry having a combination cmos gate and a bipolar transistor
12/31/1991US5077474 Thermal imaging device
12/31/1991US5077233 Forming anti-reflecting film with lower layer of silicon dioxide and upper of silicon nitride; exposure; irradiation; oxidation; etching
12/31/1991US5077232 Method of making stacked capacitor DRAM cells
12/31/1991US5077231 Method to integrate HBTs and FETs
12/31/1991US5077226 Amorphous silicon layer changed to large grained polysilicon layer; emitter region formed by diffusing ion impurities; resistance lowered
12/31/1991US5077143 Silicon electroluminescent device
12/27/1991EP0462882A1 Thin film field effect transistor with buried gate and its method of fabrication
12/27/1991EP0462656A1 A semiconductor device having a conductive track
12/27/1991EP0462653A2 Ratioed capacitances in integrated circuits
12/27/1991EP0462576A1 DRAM using barrier layer
12/27/1991EP0462416A2 Process for N-well and P-well creation on a silicon substrate using a blanket P-well implant and no N-well steam oxidation step
12/26/1991WO1991020094A1 Semiconductor device
12/26/1991WO1991020084A1 Spatial optical modulator
12/24/1991US5075885 Ecl eprom with cmos programming
12/24/1991US5075817 Trench capacitor for large scale integrated memory
12/24/1991US5075762 Semiconductor device having an inter-layer insulating film disposed between two wiring layers and method of manufacturing the same
12/24/1991US5075753 Semiconductor integrated circuit device
12/24/1991US5075752 Bi-cmos semiconductor device having memory cells formed in isolated wells
12/24/1991US5075748 Photodetector device
12/24/1991US5075747 Charge transfer device with meander channel
12/24/1991US5075746 Thin film field effect transistor and a method of manufacturing the same
12/24/1991US5075745 Capacitor cell for use in a semiconductor memory integrated circuit device
12/24/1991US5075743 Semiconductor, epitaxially grown crystalline structure compose d of a material that is near lattice matched with silicon base layer, light emitting region
12/24/1991US5075737 Thin film semiconductor device
12/24/1991US5075641 High frequency oscillator comprising cointegrated thin film resonator and active device
12/24/1991US5075579 Level shift circuit for achieving a high-speed processing and an improved output current capability
12/24/1991US5075577 Tristate output circuit with input protection
12/24/1991US5075571 PMOS wordline boost cricuit for DRAM
12/24/1991US5075548 Tunnel current probe moving mechanism having parallel cantilevers
12/24/1991US5075249 Breakdown of insulator for conduction, dopes, channels, gate i nsulator and electrode, insulating layers, inclined sidewall o n first penetrating opening, wiring electrodes
12/24/1991US5075248 Method of making DRAM having a side wall doped trench and stacked capacitor structure
12/24/1991US5075246 Semiconductor substrate, dopes, masking
12/24/1991US5075244 Metal gate electrodes of thin film transistor switching elemen ts, gate insulating layers, semiconductor active and ohmic con tact layers, drain and source electrodes, barrier metal, photo detect elements, photoconductor, contact holes, metal wiring
12/24/1991US5075242 Method of manufacturing CMOS semiconductor device having decreased diffusion layer capacitance
12/24/1991US5075239 Two or more components, selective epitaxial deposition of semi -insulating indium phosphide layer, masking, etching
12/24/1991US5075201 Method for aligning high density infrared detector arrays
12/24/1991CA1293570C Radon detector
12/19/1991DE4119918A1 Fast dram construction with improved capacitor size - uses polycide bit-lines and diffusion contacts and capacitor stack overlying word-line
12/18/1991EP0462040A1 MOS-transistor with high threshold voltage
12/18/1991EP0462029A1 Process of fabricating a bipolar transistor sustaining a reverse bias
12/18/1991EP0461982A1 Method for extension of the life time of a circuit with MOS-components subject to "Gamma" radiation
12/18/1991EP0461904A2 An improved semiconductor read-only VLSI memory
12/18/1991EP0461807A2 MESFET and manufacturing method therefor
12/18/1991EP0461764A2 EPROM virtual ground array
12/18/1991EP0461750A2 Interconnect for integrated circuits
12/18/1991EP0461717A1 DC/DC voltage multiplier
12/18/1991EP0461362A2 Process for preparing a thin film semiconductor device
12/18/1991EP0461302A2 Image sensor or reading device containing a light source and a method for manufacturing the same
12/18/1991EP0281597B1 Nonvolatile memory cell array
12/18/1991EP0238671B1 Semiconductor device
12/18/1991EP0120918B1 An aluminum-metal silicide interconnect structure for integrated circuits and method of manufacture thereof
12/18/1991CN1057130A Method for manufacturing semiconductor
12/17/1991US5073873 Semiconductor memory device
12/17/1991US5073828 Photoelectric conversion device
12/17/1991US5073816 Packaging semiconductor chips
12/17/1991US5073815 Semiconductor substrate and method for producing the same
12/17/1991US5073811 Integratable power transistor with optimization of direct secondary breakdown phenomena
12/17/1991US5073810 Semiconductor integrated circuit device and manufacturing method thereof
12/17/1991US5073808 Solid state semiconductor device
12/17/1991US5073806 For attaching to an automatic focusing camera to measure the distance to a subject
12/17/1991US5073759 Adaptable current mirror
12/17/1991US5073515 Method for manufacturing a trench capacitor of a one-transistor memory cell in a semiconductor substrate with a self-aligned capacitor plate electrode
12/17/1991US5073513 Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate
12/17/1991US5073510 Fabrication method of contact window in semiconductor device
12/17/1991US5073509 Maskless applying of dopants having different diffusion coefficients to define N- and P-channels and N-wells in complimentary metal oxide semiconductor transistor ciurcuits
12/17/1991US5073508 Method of manufacturing an integrated semiconductor circuit including a bipolar heterojunction transistor and/or buried resistors
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