| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 05/14/1992 | DE4035500A1 Elektronischer schalter Electronic switch |
| 05/14/1992 | CA2054290A1 Logic duplication method for reducing circuit size and delay time |
| 05/13/1992 | EP0485303A2 Process for fabricating an integrated circuit by a repetition of exposure of a semiconductor pattern |
| 05/13/1992 | EP0485199A2 Creation of a factory-programmed device using a logic description and a sample device implementing the description |
| 05/13/1992 | EP0485174A1 Power mosfet transistor circuit with active clamp |
| 05/13/1992 | EP0485115A2 Electro-optical detector array and method of making the same |
| 05/13/1992 | EP0485018A2 Electrically erasable and programmable read only memory with trench structure |
| 05/13/1992 | EP0485016A2 Integrated charge pump circuit with back bias voltage reduction |
| 05/13/1992 | EP0484965A2 Active matrix substrate |
| 05/13/1992 | EP0484926A2 Image reading device transferring the reset charge for a charge accumulating element through the associated photosensitive element |
| 05/13/1992 | EP0484922A1 III-V compound semiconductor device, printer and display device utilizing the same, and method for producing said semiconductor device |
| 05/13/1992 | EP0484852A1 Temperature controlled electronical circuit |
| 05/13/1992 | EP0371069B1 Process for manufacturing microsensors with integrated signal processing |
| 05/12/1992 | US5113374 Mos type semiconductor memory device having a word line resetting circuit |
| 05/12/1992 | US5113305 Protection device against the breakdown of bipolar transistors in an integrated driving circuit for a power device with a resonant load |
| 05/12/1992 | US5113263 Reduced size accurate solid-state camera having low power consumption |
| 05/12/1992 | US5113238 Contactless non-volatile memory array cells |
| 05/12/1992 | US5113236 Integrated circuit device particularly adapted for high voltage applications |
| 05/12/1992 | US5113235 Dynamic random access memory |
| 05/12/1992 | US5113232 LED array chips with thermal conductor |
| 05/12/1992 | US5113230 Semiconductor device having a conductive layer for preventing insulation layer destruction |
| 05/12/1992 | US5113100 Energization coil device, a method of making such a device and an electromagnetic micromotor fitted therewith |
| 05/12/1992 | US5113093 Semiconductor integrated circuit with multiple operation |
| 05/12/1992 | US5113076 Two terminal multi-band infrared radiation detector |
| 05/12/1992 | US5113063 Method of monitoring focusing condition using rate of change signal at a border in a semiconductor image position sensitive device |
| 05/12/1992 | US5112773 Nodules, heterogeneous |
| 05/12/1992 | US5112772 Method of fabricating a trench structure |
| 05/12/1992 | US5112771 Method of fibricating a semiconductor device having a trench |
| 05/12/1992 | US5112765 Method of forming stacked tungsten gate PFET devices and structures resulting therefrom |
| 05/12/1992 | US5112762 In DRAM devices, storage node |
| 05/12/1992 | US5112761 Bicmos process utilizing planarization technique |
| 05/12/1992 | CA1300764C Semiconductor devices having closely spaced device regions formed using a selfaligning reverse image fabrication process |
| 05/12/1992 | CA1300762C2 Fabrication of customized integrated circuits |
| 05/09/1992 | CA2095849A1 Silicon avalanche photodiode array |
| 05/08/1992 | CA2055005A1 Temperature controlled electronic circuit |
| 05/07/1992 | DE4136393A1 DRAM on silicon@ substrate with matrix of active regions - whose lines and columns are separated and each with bit line and memory node terminals |
| 05/07/1992 | DE4113741A1 Integrated circuit metallisation process with improved step covering - uses same metal, with preferential deposition on polycrystalline silicon@, for contact plus and interconnection pattern |
| 05/07/1992 | CA2054675A1 Power mosfet transistor circuit with active clamp |
| 05/06/1992 | EP0484128A1 Semiconductor memory and method of manufacturing the same |
| 05/06/1992 | EP0484088A1 Stacked capacitor DRAM cell |
| 05/06/1992 | EP0483958A1 Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer |
| 05/06/1992 | EP0483833A1 Semiconductor integrated circuit device having cells with self-clamping terminal |
| 05/06/1992 | EP0483824A1 MIS transistor with heterojunction |
| 05/06/1992 | EP0483319A1 Etching indium tin oxide |
| 05/06/1992 | EP0256053B1 Matrix of interconnected transistors in thin layers and production method thereof |
| 05/05/1992 | US5111435 Bipolar-CMOS semiconductor memory device |
| 05/05/1992 | US5111434 Semiconductor memory device |
| 05/05/1992 | US5111429 Single event upset hardening CMOS memory circuit |
| 05/05/1992 | US5111428 High density NOR type read only memory data cell and reference cell network |
| 05/05/1992 | US5111355 Thin films, high capacitance |
| 05/05/1992 | US5111275 Multicell semiconductor memory device |
| 05/05/1992 | US5111273 Fabrication of personalizable integrated circuits |
| 05/05/1992 | US5111272 Semiconductor device having element regions electrically isolated from each other |
| 05/05/1992 | US5111271 Semiconductor device using standard cell system |
| 05/05/1992 | US5111270 Three-dimensional contactless non-volatile memory cell |
| 05/05/1992 | US5111269 Bipolar transistor structure containing a resistor which assures reduction in layout area |
| 05/05/1992 | US5111267 Semiconductor device having a multilayer electrode structure and method for fabricating the same |
| 05/05/1992 | US5111264 Photoelectric conversion device |
| 05/05/1992 | US5111263 Charge-coupled device (CCD) image sensor operable in either interlace or non-interlace mode |
| 05/05/1992 | US5111262 Structure for protecting thin dielectrics during processing |
| 05/05/1992 | US5111259 Trench capacitor memory cell with curved capacitors |
| 05/05/1992 | US5111257 Electronic integrated circuit having an electrode layer for element isolation |
| 05/05/1992 | US5111256 High speed semiconductor device and an optelectronic device |
| 05/05/1992 | US5111253 Multicellular FET having a Schottky diode merged therewith |
| 05/05/1992 | US5111069 Layout of integrated circuit with very large transistors |
| 05/05/1992 | US5111068 Diffusion resistor circuit |
| 05/05/1992 | US5111063 Integrated clock driver circuit |
| 05/05/1992 | US5111060 Electronic circuit equipped with redundant or spare circuit elements for every circuit element |
| 05/05/1992 | US5110766 Method of manufacturing a semiconductor device including forming a flattening layer over hollows in a contact hole |
| 05/05/1992 | US5110754 Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM |
| 05/05/1992 | US5110753 Cross-point contact-free floating-gate memory array with silicided buried bitlines |
| 05/05/1992 | US5110752 Metal silicides |
| 05/05/1992 | US5110750 Semiconductor device and method of making the same |
| 05/05/1992 | CA1300281C Substrate potential detecting circuit |
| 04/30/1992 | WO1992007386A1 Monolithic solar cell array and method for its manufacture |
| 04/30/1992 | WO1992007384A1 Piso electrostatic discharge protection device |
| 04/30/1992 | WO1992007383A1 Semiconductor device |
| 04/30/1992 | WO1992007382A1 Structure of semiconductor device and manufacturing method thereof |
| 04/30/1992 | WO1992007362A1 Semiconductor memory unit having redundant structure |
| 04/30/1992 | DE4135147A1 Semiconductor device with inexpensive substrate - comprises ion-implanted impurity-doped semiconductor layers, avoiding high-temp. heat-treatment of soda lime glass substrate |
| 04/30/1992 | DE4135032A1 EEPROM with memory cells contg. MOS with charge layer and control gate - has transistor with drain breakdown voltage adjuster for specified operational range |
| 04/30/1992 | DE4116696A1 Opto=electronic integrated circuit mfr. - by depositing mask layer on substrate surface and forming mask for selective growth |
| 04/29/1992 | EP0482928A2 Semiconducteur memory |
| 04/29/1992 | EP0482880A2 A read-only memory |
| 04/29/1992 | EP0482697A2 Operational analysis device of the scan path type having a single scanning clock and a single output phase for an integrated circuit |
| 04/29/1992 | EP0482556A1 Polysilicon resistance element and semiconductor device using the same |
| 04/29/1992 | EP0482511A1 Integrated photovoltaic device |
| 04/29/1992 | EP0482455A2 Component having integrated waveguide with anti-reflective end surfaces |
| 04/29/1992 | EP0482240A1 Method of accurate processing of flat or light curved workpieces |
| 04/29/1992 | EP0482232A1 Process for manufacturing a doped polycide layer on a semiconductor substrate |
| 04/28/1992 | US5109440 Image sensing apparatus |
| 04/28/1992 | US5109361 Electrically page erasable and programmable read only memory |
| 04/28/1992 | US5109357 DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line |
| 04/28/1992 | US5109265 Semiconductor memory with connection pads disposed in the interior |
| 04/28/1992 | US5109261 CMOS amplifier with offset adaptation |
| 04/28/1992 | US5109259 Multiple DRAM cells in a trench |
| 04/28/1992 | US5109258 Memory cell made by selective oxidation of polysilicon |
| 04/28/1992 | US5108947 Controlling formation of microcracks using shaped mask for crystal deposition |
| 04/28/1992 | US5108945 Maintaining planarization |
| 04/28/1992 | US5108944 Method of manufacturing a semiconductor device |