| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 06/02/1992 | US5119337 Semiconductor memory device having burn-in test function |
| 06/02/1992 | US5119332 Semiconductor memory |
| 06/02/1992 | US5119329 Memory cell based on ferro-electric non volatile variable resistive element |
| 06/02/1992 | US5119314 Semiconductor integrated circuit device |
| 06/02/1992 | US5119267 Capacitor for an integrated circuit |
| 06/02/1992 | US5119227 Optically switchable device |
| 06/02/1992 | US5119217 Active matrix substrate for liquid crystal device |
| 06/02/1992 | US5119202 Scan circuit with bootstrap drive |
| 06/02/1992 | US5119183 Color scan array with addressing circuitry |
| 06/02/1992 | US5119168 Semiconductor integrated circuit |
| 06/02/1992 | US5119165 Semiconductor integrated circuit device using a planar structure with reduced bit line and word line resistance |
| 06/02/1992 | US5119163 Semiconductor device |
| 06/02/1992 | US5119162 Integrated power DMOS circuit with protection diode |
| 06/02/1992 | US5119161 Semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip |
| 06/02/1992 | US5119160 Clocked CBICMOS integrated transistor structure |
| 06/02/1992 | US5119159 Lateral dmosfet semiconductor device with reduced on resistance and device area |
| 06/02/1992 | US5119158 Gate array semiconductor integrated circuit device |
| 06/02/1992 | US5119157 Semiconductor device with self-aligned contact to buried subcollector |
| 06/02/1992 | US5119156 Photo-detecting semiconductor device with passivation suppressing multi-reflections |
| 06/02/1992 | US5119155 Semiconductor memory device with dielectric isolation |
| 06/02/1992 | US5119154 Ferroelectric capacitor and method for forming local interconnect |
| 06/02/1992 | US5119070 Resonant tag |
| 06/02/1992 | US5119038 CMOS current mirror with offset adaptation |
| 06/02/1992 | US5118973 Emitter coupled logic circuit having independent input transistors |
| 06/02/1992 | US5118640 Diffused regions between gate segments |
| 06/02/1992 | US5118635 Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process |
| 06/02/1992 | US5118633 Doping, heat treatment |
| 06/02/1992 | US5118631 Image sensors; adjustment of barriers to drain excess charges accumulating in substrate |
| 05/29/1992 | WO1992009109A1 Silicon avalanche photodiode array |
| 05/29/1992 | WO1992009107A1 Electronic switch, in particular in the form of a transistor |
| 05/29/1992 | WO1992009106A1 Opto-electronic sensor using semiconductors |
| 05/29/1992 | WO1992009105A1 Solid-state imaging device and method of manufacturing the same |
| 05/29/1992 | WO1992009085A1 Semiconductor memory |
| 05/27/1992 | EP0487468A2 Flash-EPROM memory with single metal level, erasable per blocks of cells |
| 05/27/1992 | EP0487220A2 SOI-Field effect transistor and method of manufacturing the same |
| 05/27/1992 | EP0487192A2 Opto-electronic integrated circuit having a transmitter of long wavelength |
| 05/27/1992 | EP0487088A2 Method for forming semiconductor crystal and semiconductor device formed by said method |
| 05/27/1992 | EP0487022A2 A method of simultaneously fabricating an insulated gate-field-effect transistor and a bipolar transistor |
| 05/27/1992 | EP0486879A2 Logic level control circuit |
| 05/27/1992 | EP0486699A1 Semiconductor device |
| 05/26/1992 | US5117477 Optical functioning element using a transparent substrate with matching lattice constant |
| 05/26/1992 | US5117390 Semiconductor memory system for use in logic lsi's |
| 05/26/1992 | US5117389 Flat-cell read-only-memory integrated circuit |
| 05/26/1992 | US5117274 Merged complementary bipolar and MOS means and method |
| 05/26/1992 | US5117270 Photosensor with AU diffused Pb2 CrO5 or similar film |
| 05/26/1992 | US5117269 Eprom memory array with crosspoint configuration |
| 05/26/1992 | US5117268 Thermionic emission type static induction transistor and its integrated circuit |
| 05/26/1992 | US5117206 Variable capacitance integrated circuit usable in temperature compensated oscillators |
| 05/26/1992 | US5117129 Cmos off chip driver for fault tolerant cold sparing |
| 05/26/1992 | US5117127 Customizable logic integrated circuit with multiple-drain transistor for adjusting switching speed |
| 05/26/1992 | US5117125 Logic level control for impact ionization sensitive processes |
| 05/26/1992 | US5117118 Photoelectric switch using an integrated circuit with reduced interconnections |
| 05/26/1992 | US5116785 Decomposing fluorinated organometallic complex of beryllium, calcium, strontium, barium or lanthanide in vicinity of semiconductor substrate |
| 05/26/1992 | US5116779 Process for forming semiconductor device isolation regions |
| 05/26/1992 | US5116778 In situ doping with doped glasses of both sidewalls of isolation trenches and connector regions between sources and gate areas and between drains and gate areas in semiconductors |
| 05/26/1992 | US5116777 Memory and integrated devices, epitaxial silicon layer with P-type regions, contacts to N-type buried layer through epitaxial layer, N-channel field effect devices in P-type regions |
| 05/26/1992 | US5116776 Method of making a stacked copacitor for dram cell |
| 05/26/1992 | US5116775 Method of producing semiconductor memory device with buried barrier layer |
| 05/26/1992 | US5116774 Semiconductor substrate; several semiconductor layers with channel layer having at least one additional layer; ohmic, gate contacts on layers; removing parts of additional layer between contacts; gate, ohmic metal; source, drain regions |
| 05/26/1992 | US5116771 Silicon channel regions between silicon source and drain regions of epitaxial silicon film on insulator substrate, protective layer over silicon film, mask layer, removing regions of mask layer, thinning silicon underlying openings |
| 05/26/1992 | US5116768 Fabrication method of a semiconductor integrated circuit having an SOI device and a bulk semiconductor device on a common semiconductor substrate |
| 05/26/1992 | US5116641 Method for laser scribing substrates |
| 05/26/1992 | CA1301897C Method for producing an opto-electronic integrated circuit |
| 05/26/1992 | CA1301896C Photoelectric conversion device |
| 05/21/1992 | WO1992009104A1 Silicon-on-porous-silicon; method of production and material |
| 05/21/1992 | EP0494184A4 Nmos device with integral esd protection. |
| 05/21/1992 | DE4131078A1 Capacitor structure for DRAM cell - has two types of spacers with two sides, supporting subsequently formed layers respectively |
| 05/21/1992 | CA2094237A1 Silicon-on-porous-silicon, method of production and material |
| 05/20/1992 | EP0486444A2 Double metal, bank erasable, flash-EPROM memory |
| 05/20/1992 | EP0486418A2 Thin film resistor and method for producing same |
| 05/20/1992 | EP0486249A2 Eprom array |
| 05/20/1992 | EP0486248A2 Logic duplication method for reducing circuit size and delay time |
| 05/20/1992 | EP0486141A2 A solid state imaging element |
| 05/20/1992 | EP0486134A1 A biCMOS process with low base recombination current bipolar transistors |
| 05/20/1992 | EP0486066A1 Method for forming crystal article |
| 05/20/1992 | EP0485907A1 Ultrahigh-purity ferroelectric thin film |
| 05/20/1992 | EP0485623A1 Semiconductor device provided with logical circuit for measuring delay |
| 05/20/1992 | EP0485590A1 Optical emission spectroscopy to determine etch completion of indium tin oxide |
| 05/20/1992 | EP0485571A1 Plasma etching indium tin oxide |
| 05/19/1992 | US5115458 Reducing dark current in charge coupled devices |
| 05/19/1992 | US5115369 Avalanche stress protected semiconductor device having variable input impedance |
| 05/19/1992 | US5115335 Electrooptic fabry-perot pixels for phase-dominant spatial light modulators |
| 05/19/1992 | US5115297 Complementary type semiconductor integrated circuit device |
| 05/19/1992 | US5115295 Photodetector device |
| 05/19/1992 | US5115294 Photodetector and transistor |
| 05/19/1992 | US5115293 Solid-state imaging device |
| 05/19/1992 | US5115289 Semiconductor device and semiconductor memory device |
| 05/19/1992 | US5115287 Step-cut insulated gate static induction transistors and method of manufacturing the same |
| 05/19/1992 | US5115283 Optoelectronic device on semi-insulator substrate and methods for making such a device |
| 05/19/1992 | US5115150 Low power CMOS bus receiver with small setup time |
| 05/19/1992 | US5115124 Semiconductor photosensor having unitary construction |
| 05/19/1992 | US5114912 Two-dimensional, Josephson-array, voltage-tunable, high-frequency oscillator |
| 05/19/1992 | US5114879 Method of forming a microelectronic contact |
| 05/19/1992 | US5114872 Forming planar ITO gate electrode array structures |
| 05/19/1992 | US5114870 Method for manufacturing field effect transistors |
| 05/19/1992 | US5114869 Semiconductors |
| 05/19/1992 | US5114868 Manufacturing method of well region in coms intergrated circuit |
| 05/19/1992 | US5114865 Method of manufacturing a solid-state image sensing device having an overflow drain structure |
| 05/14/1992 | WO1992003850A3 Image sensor having transfer gate between the photodiode and the ccd element |
| 05/14/1992 | DE4101939A1 Dynamic random-access memory cell - has memory layers in fin structure supported by intermediate heterogeneous layers |