H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
11/1998
11/24/1998	US5841164 Test structure for dielectric film evaluation
11/24/1998	US5841163 Integrated circuit memory devices having wide and narrow channel stop layers
11/24/1998	US5841161 Flash memory and method for fabricating the same
11/24/1998	US5841160 Semiconductor device having a capacitor electrode made of iridium
11/24/1998	US5841159 Active pixel sensor integrated with a photocapacitor
11/24/1998	US5841158 In a semiconductor substrate
11/24/1998	US5841157 Semiconductor integrated circuit including a high density cell
11/24/1998	US5841153 SRAM semiconductor device
11/24/1998	US5841151 Quasi type II semiconductor quantum well device
11/24/1998	US5841150 Silicon base, oxide layer, diode, chalcogenide memory element; minimized size
11/24/1998	US5841126 CMOS active pixel sensor type imaging system on a chip
11/24/1998	US5840626 Semiconductor device and method of manufacturing the same
11/24/1998	US5840618 Method of manufacturing semiconductor device using an amorphous material
11/24/1998	US5840616 Method for preparing semiconductor member
11/24/1998	US5840613 Fabrication method for semiconductor device
11/24/1998	US5840608 High density ROM and a method of making the same
11/24/1998	US5840604 Methods of forming MOS transistors having hot-carrier suppression electrodes
11/24/1998	US5840603 Method for fabrication BiCMOS integrated circuit
11/24/1998	US5840602 Methods of forming nonmonocrystalline silicon-on-insulator thin-film transistors
11/24/1998	US5840601 Thin film transistor and method for making same
11/24/1998	US5840596 Forming undoped and doped silicon or silicon alloy layers, forming n-channel transistor, forming p-channel transistor, forming electrodes
11/24/1998	US5840593 Membrane dielectric isolation IC fabrication
11/24/1998	US5840592 Method of improving the spectral response and dark current characteristics of an image gathering detector
11/24/1998	US5840591 Method of manufacturing buried bit line DRAM cell
11/24/1998	US5840110 Metal alkoxycarboxylate-based liquids
11/24/1998	CA2064922C Tapering sidewalls of via holes
11/19/1998	WO1998052278A2 An amplified mos biasing circuit for avoiding latch-up
11/19/1998	WO1998052231A1 Reduce width, differentially doped vertical jfet device
11/19/1998	WO1998052222A1 Integrated passive components and package with posts
11/19/1998	WO1998052216A1 A controlled cleavage process
11/19/1998	WO1998052211A2 Integrated cmos circuit configuration, and production of same
11/19/1998	WO1998051837A2 Chemical vapour deposition precursors
11/19/1998	DE19821221A1 Solar cell
11/19/1998	DE19800089A1 Transistor-containing semiconductor device e.g. memory device
11/19/1998	DE19750918A1 Semiconductor device especially DRAM cell
11/19/1998	DE19748495A1 EEPROM cell structure of high packing density
11/19/1998	DE19731090C1 Thin film transistor active matrix production
11/19/1998	DE19720680A1 Novel complementary C-MOS transistor pair
11/19/1998	DE19720193A1 Vertical metal-oxide-semiconductor transistor integrated circuit
11/19/1998	CA2290104A1 A controlled cleavage process
11/18/1998	EP0878847A1 Ferroelectric material, nonvolatile memory device and their manufacturing methods
11/18/1998	EP0878844A2 High frequency apparatus including a low loss substrate
11/18/1998	EP0878837A2 Ferroelectric thin film comprising a bufferlayer and a Bismuth layered compound
11/18/1998	EP0878789A2 Image display device
11/18/1998	EP0878769A2 Method for verification of combinational circuits using a filtering oriented approach
11/18/1998	EP0878091A1 Colour image sensor for short-time exposure
11/18/1998	EP0878022A1 Method for forming ultra-thin gate oxides
11/18/1998	EP0878007A2 Active pixel sensor array with electronic shuttering
11/18/1998	EP0786148A4 Radiation hardened charge coupled device
11/18/1998	CN1199507A Separating method, method for transferring thin film device, thin film device, thin film IC device and liquid crystal display device mfg by using transferring method
11/18/1998	CN1199506A Integrated circuit comprising substrate and wiring layer with buffer layer between substrate and wiring layer
11/18/1998	CN1199278A Low voltage operated oscillator
11/18/1998	CN1199248A Semiconductor device and mfg. method thereof
11/18/1998	CN1199247A Semiconductor device and manufacturing method thereof
11/18/1998	CN1199246A Method of manufacturing semiconductor device
11/18/1998	CN1199245A Method of forming integrated circuit capacitors and capacitors formed thereby
11/18/1998	CN1199244A Method of manufacturing semiconductor device having MOS transistor and bipolar transistor in mixture on same substrate
11/17/1998	US5838854 Integrated optical control element and a method for fabricating the same and optical integrated circuit element and optical integrated circuit device using the same
11/17/1998	US5838629 Dynamic random access memory device
11/17/1998	US5838617 Method for changing electrically programmable read-only memory devices
11/17/1998	US5838615 Nonvolatile semiconductor memory device having reduced source line resistance
11/17/1998	US5838611 Nonvolatile semiconductor device and method of manufacturing same
11/17/1998	US5838609 Integrated semiconductor device having negative resistance formed of MIS switching diode
11/17/1998	US5838605 Ferroelectric memory cell
11/17/1998	US5838604 Semiconductor memory device with an increased band width
11/17/1998	US5838549 Memory module and an IC card
11/17/1998	US5838399 TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level as gate electrodes.
11/17/1998	US5838335 Graphic data processing method and device
11/17/1998	US5838204 Phase locked loop with multiple, programmable, operating frequencies, and an efficient phase locked loop layout method
11/17/1998	US5838174 Photocoupler having element isolation layers for low cross-talk low stress and high break down voltage
11/17/1998	US5838110 Powered by an ac supply source
11/17/1998	US5838068 Integrated circuitry with interconnection pillar
11/17/1998	US5838057 Transistor switches
11/17/1998	US5838056 Semiconductor device applied to composite insulative film and manufacturing method thereof
11/17/1998	US5838054 Contact pads for radiation imagers
11/17/1998	US5838050 Hexagon CMOS device
11/17/1998	US5838049 Tungsten
11/17/1998	US5838048 Semiconductor Bi-MIS device
11/17/1998	US5838047 Semiconductor device
11/17/1998	US5838044 Integrated circuit having improved polysilicon resistor structures
11/17/1998	US5838043 ESD protection circuit located under protected bonding pad
11/17/1998	US5838040 Nonvolatile reprogrammable interconnect cell with FN tunneling in sense
11/17/1998	US5838039 Semiconductor memory having a tunneling region
11/17/1998	US5838037 TFT-array and manufacturing method therefor
11/17/1998	US5838036 Semiconductor memory device capable of realizing a minimum memory cell area approximate to a theoretical value
11/17/1998	US5838035 Barrier layer for ferroelectric capacitor integrated on silicon
11/17/1998	US5838033 Integrated circuit with gate conductor defined resistor
11/17/1998	US5838032 Precision capacitor array
11/17/1998	US5838031 Low noise-high linearity HEMT-HBT composite
11/17/1998	US5838023 Integrated circuit device
11/17/1998	US5838021 Single electron digital circuits
11/17/1998	US5837995 Wavelength-controllable voltage-phase photodiode optoelectronic switch ("opsistor")
11/17/1998	US5837617 Heterojunction compound semiconductor device and method of manufacturing the same
11/17/1998	US5837606 Semiconductor device having internal wire and method of fabricating the same
11/17/1998	US5837602 Method of manufacturing doped interconnect
11/17/1998	US5837601 Implanting dopant impurities to equal concentrations at both sides of interface between gate electrode and silicide electrode to prevent impurity diffusion during heat treatment; complementary metal oxide semiconductors (cmos)
11/17/1998	US5837594 Method of manufacturing a semiconductor device wherein one of capacitor electrodes comprises a conductor pole and a tray-shaped conductor layer
11/17/1998	US5837593 Coating electrode with tantalum pentoxide film, annealing film by exposure to ultraviolet radiation and ozone, repeating to form uniformly oxidized thick film providing high capacitance with low leakage current
11/17/1998	US5837591 Method of manufacturing a semiconductor device
11/17/1998	US5837589 Simplified production of monolithic microwave integrated circuit by concurrent formation heterojunction bipolar transistor for the local oscillator and schottky diode for the mixer

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