Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
12/1998
12/29/1998CA2058143C Direct microcircuit decoupling
12/24/1998DE19827454A1 CMOS logic circuit, e.g. inverter or NAND=gate
12/24/1998DE19826735A1 Power supply circuit for integrated circuit with several operating frequency modes
12/24/1998DE19825266A1 Semiconductor device capacitor production
12/24/1998DE19816309A1 Direct assembly for silicon sensors
12/24/1998DE19810072A1 Solid-state image pick-up
12/24/1998DE19805075A1 Solid-state image pick-up with vertical and horizontal CCDs
12/24/1998DE19803479A1 Polysilicon thin film transistor
12/24/1998DE19757889A1 Semiconductor memory device, e.g. DRAM, with test mode
12/23/1998WO1998058411A1 Photodetector circuit
12/23/1998WO1998058410A1 Semiconductor memory
12/23/1998WO1998058404A2 A substrate for high frequency integrated circuits
12/23/1998WO1998058385A1 Memory element with energy control mechanism
12/23/1998WO1998058382A1 Semiconductor integrated circuit device
12/23/1998EP0886441A2 Integrated imaging head
12/23/1998EP0886380A2 Zero current draw circuit for use during a bonding option
12/23/1998EP0886329A2 Electroluminescence device, electroluminescence apparatus, and production methods thereof
12/23/1998EP0886323A2 Imager package substrate
12/23/1998EP0886322A2 Packaging of imaging devices
12/23/1998EP0886321A1 Threshold voltage adjusting method for a MIS device and charge detecting device
12/23/1998EP0886318A1 MOS image sensor
12/23/1998EP0886317A2 Dielectric device, Dielectric memory and method of fabricating the same
12/23/1998EP0886316A1 Protection of a logic device well comprising an integrated power MOS transistor
12/23/1998EP0886314A1 Semiconductor circuit device capable of reducing influence of a parasitic capacitor
12/23/1998EP0886300A2 Apparatus and method of separating sample and substrate fabrication method
12/23/1998EP0886279A2 Address decoder, simiconductor memory and semiconductor device
12/23/1998EP0885483A1 Push-pull power amplifier
12/23/1998EP0885457A2 Method for making a circuit structure having a flip-mounted matrix of devices
12/23/1998EP0885456A1 Increasing the dynamic range of image sensors
12/23/1998EP0885451A1 Transparent contacts for organic devices
12/23/1998EP0885315A1 Misted precursor deposition apparatus and method with improved mist and mist flow
12/23/1998CN1202982A Semiconductor storage device and process for manufacturing the same
12/23/1998CN1202981A Method for producing very small structural widths on a semiconductor substrate
12/23/1998CN1202739A Semiconductor device
12/23/1998CN1202738A Structure of read-only memory and its producing method
12/23/1998CN1202737A 半导体器件 Semiconductor devices
12/23/1998CN1202736A SOI/bulk hybrid substrate and method of forming the same
12/23/1998CN1202734A Circuit for electrostatic discharge (ESD) protection
12/23/1998CN1202733A Protecting circuit for semiconductor circuit
12/23/1998CN1202732A Semiconductor device having wiring detour around step
12/23/1998CN1202729A Semiconductor device and method of manufacturing the same
12/23/1998CN1202728A Semiconductor device and method of manufacturing semiconductor device
12/23/1998CN1202635A Electro-optical device substrate, electro-optical device, electronic device, and projection display device
12/23/1998CN1041365C Method for producing raractor diode
12/23/1998CN1041364C Tannel diode and storing element with such tannel diode
12/23/1998CA2294290A1 A substrate for high frequency integrated circuits
12/23/1998CA2290965A1 Photodetector circuit
12/22/1998US5852577 Electrically erasable and programmable read-only memory having a small unit for program and erase
12/22/1998US5852575 Apparatus and method for reading multi-level data stored in a semiconductor memory
12/22/1998US5852573 Polyload sram memory cell with low stanby current
12/22/1998US5852572 Small-sized static random access memory cell
12/22/1998US5852570 Semiconductor memory using select transistors coupled to sub-bitlines from different blocks
12/22/1998US5852541 Early trigger of ESD protection device by an oscillation circuit
12/22/1998US5852481 Liquid crystal display with two gate electrodes each having a non-anodizing and one anodizing metallic layer and method of fabricating
12/22/1998US5852366 High voltage level shift circuit including CMOS transistor having thin gate insulating film
12/22/1998US5852321 Thermal type infrared radiation solid state image pick-up device
12/22/1998US5852317 Method to reduce gate oxide damage due to non-uniform plasmas in read only memory arrays
12/22/1998US5852316 Complementary heterojunction amplifier
12/22/1998US5852315 N-sided polygonal cell layout for multiple cell transistor
12/22/1998US5852314 Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground
12/22/1998US5852313 Flash memory cell structure having a high gate-coupling coefficient and a select gate
12/22/1998US5852312 Flash eeprom cell
12/22/1998US5852311 Non-volatile memory devices including capping layer contact holes
12/22/1998US5852310 Multi-level transistor fabrication method with a patterned upper transistor substrate and interconnection thereto
12/22/1998US5852307 Semiconductor device with capacitor
12/22/1998US5852305 Liquid crystal display apparatus with repair structure
12/22/1998US5852296 X-ray imaging apparatus
12/22/1998US5851922 Process for fabricating a device using nitrogen implantation into silicide layer
12/22/1998US5851902 Semiconductor layer structure and recording medium for a large capacity memory
12/22/1998US5851897 Method of forming a dram cell with a crown-fin-pillar structure capacitor
12/22/1998US5851896 Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes
12/22/1998US5851894 Method of vertically integrating microelectronic systems
12/22/1998US5851890 Process for forming integrated circuit structure with metal silicide contacts using notched sidewall spacer on gate electrode
12/22/1998US5851885 Manufacturing method for ROM components having a silicon controlled rectifier structure
12/22/1998US5851884 Structure and manufacturing method for ROM
12/22/1998US5851882 ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
12/22/1998US5851881 Method of making monos flash memory for multi-level logic
12/22/1998US5851880 Method of making nonvolatile memory elements with selector transistors
12/22/1998US5851879 Method for fabricating compact contactless trenched flash memory cell
12/22/1998US5851878 Method of forming a rugged polysilicon fin structure in DRAM
12/22/1998US5851876 Method of manufacturing dynamic random access memory
12/22/1998US5851875 Process for forming capacitor array structure for semiconductor devices
12/22/1998US5851873 Method of making semiconductor memory device
12/22/1998US5851872 Method of fabricating dynamic random access memory
12/22/1998US5851871 Process for manufacturing integrated capacitors in MOS technology
12/22/1998US5851870 Method for making a capacitor
12/22/1998US5851869 Manufacture of semiconductor device having low contact resistance
12/22/1998US5851868 Methods of forming integrated decoupling capacitors
12/22/1998US5851866 Fabrication method for CMOS with sidewalls
12/22/1998US5851864 Method of fabricating BiCMOS devices
12/22/1998US5851863 Semiconductor device
12/22/1998US5851860 Semiconductor device and method for producing the same
12/22/1998US5851858 Method for producing a multiplicity of microelectronic circuits on SOI
12/22/1998US5851856 Manufacture of application-specific IC
12/22/1998US5851847 Photonic device and process for fabricating the same
12/22/1998US5851846 Polishing method for SOI
12/22/1998US5851841 Method for producing ferroelectric film element, and ferroelectric film element and ferroelectric memory element produced by the method
12/22/1998US5851709 Method for selective transfer of a color organic layer
12/22/1998US5851440 Semiconductor device and liquid crystal display apparatus using the same
12/22/1998CA2126479C Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density