| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 02/16/1999 | US5872371 Active pixel sensor with punch-through reset and cross-talk suppression |
| 02/16/1999 | US5872369 Solid-state antenna switch and field-effect transistor |
| 02/16/1999 | US5872355 Electroluminescent device and fabrication method for a light detection system |
| 02/16/1999 | US5872049 Nitrogenated gate structure for improved transistor performance and method for making same |
| 02/16/1999 | US5872041 Method for fabricating electrodes of a semiconductor capacitor |
| 02/16/1999 | US5872037 Method for manufacturing a vertical mosfet including a back gate electrode |
| 02/16/1999 | US5872036 Method of manufacturing a split-gate flash memory cell |
| 02/16/1999 | US5872035 Method of forming a floating gate in a flash memory device |
| 02/16/1999 | US5872034 EPROM in double poly high density CMOS |
| 02/16/1999 | US5872032 Fabrication method for a DRAM cell with bipolar charge amplification |
| 02/16/1999 | US5872031 Exposing layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide during the exposing step,hydrogenation of |
| 02/16/1999 | US5872030 Method of improving beta ratio in SRAM and device manufactured thereby |
| 02/16/1999 | US5872029 Method for forming an ultra high density inverter using a stacked transistor arrangement |
| 02/16/1999 | US5872027 Master slice type integrated circuit system having block areas optimized based on function |
| 02/16/1999 | US5872021 Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode |
| 02/16/1999 | US5872019 Method for fabricating a field emitter array incorporated with metal oxide semiconductor field effect transistors |
| 02/16/1999 | US5871853 Metal oxide crystal for thin film capacitors |
| 02/16/1999 | CA2119503C Wavelength division multiplexed optical communication transmitters |
| 02/16/1999 | CA2048675C Fermi threshold field effect transistor |
| 02/11/1999 | WO1999007069A1 System for compensating for temperature induced delay variation in an integrated circuit |
| 02/11/1999 | WO1999007019A1 Three-pole high-voltage switch |
| 02/11/1999 | WO1999007000A2 Two bit eeprom using asymmetrical charge trapping |
| 02/11/1999 | WO1999006110A1 Cluster tool method and apparatus using plasma immersion ion implantation |
| 02/11/1999 | DE19834640A1 Multilayer conducting track substrate for integrated hybrid circuit |
| 02/11/1999 | DE19830320A1 High speed horizontal charge-coupled device |
| 02/11/1999 | DE19801658C1 Physical reference value provision method |
| 02/11/1999 | DE19731203A1 CMOS-Schaltung und Verfahren zu ihrer Herstellung CMOS circuit and method for their preparation |
| 02/10/1999 | EP0896468A2 Solid state imaging device and method for driving the same |
| 02/10/1999 | EP0896412A1 Electrostatic protection circuit |
| 02/10/1999 | EP0896405A2 Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device |
| 02/10/1999 | EP0896370A1 Electrically erasable programmable non-volatile memory device compatible with CMOS/SOI manufacturing process |
| 02/10/1999 | EP0896366A1 EEPROM cell structure and fabrication process |
| 02/10/1999 | EP0895512A1 Pin layer sequence on a perovskite |
| 02/10/1999 | CN1207829A CMOS device |
| 02/10/1999 | CN1207588A Semiconductor storage |
| 02/10/1999 | CN1207586A Protection layer for laser blown fuses |
| 02/10/1999 | CN1207582A Layout pattern of memory cell circuit |
| 02/10/1999 | CN1207581A Process for producing semiconductor device having hemispherical grains |
| 02/10/1999 | CN1207579A Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus |
| 02/10/1999 | CN1207578A Structural method |
| 02/10/1999 | CN1207577A Structure forming method |
| 02/10/1999 | CN1207561A Semiconductor memory device having constant voltage circuit |
| 02/09/1999 | USRE36089 Column selecting circuit in semiconductor memory device |
| 02/09/1999 | US5870482 Miniature silicon condenser microphone |
| 02/09/1999 | US5870339 MOS semiconductor device with memory cells each having storage capacitor and transfer transistor |
| 02/09/1999 | US5870337 Flash-erasable semiconductor memory device having an improved reliability |
| 02/09/1999 | US5870334 Nonvolatile semiconductor memory device |
| 02/09/1999 | US5870330 Static random access memory cell |
| 02/09/1999 | US5870310 Method and apparatus for designing re-usable core interface shells |
| 02/09/1999 | US5870268 Early trigger of ESD protection device by a current spike generator |
| 02/09/1999 | US5869997 Intermediate potential generating circuit |
| 02/09/1999 | US5869929 Color conversion material in which a plurality of shielding layers and a plurality of different color conversion layers are separately and repeatedly assembled on the same flat, alternating with each other |
| 02/09/1999 | US5869900 In an integrated circuit |
| 02/09/1999 | US5869896 Packaged electronic module and integral sensor array |
| 02/09/1999 | US5869878 Semiconductor device with temperature detecting diode, method of forming the device and temperature detecting method using the device |
| 02/09/1999 | US5869872 Semiconductor integrated circuit device and manufacturing method for the same |
| 02/09/1999 | US5869871 Semiconductor device capable of avoiding damage by ESD |
| 02/09/1999 | US5869869 Integrated circuit |
| 02/09/1999 | US5869868 Trench structure |
| 02/09/1999 | US5869867 FET semiconductor integrated circuit device having a planar element structure |
| 02/09/1999 | US5869866 Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions |
| 02/09/1999 | US5869863 memory having a trench type gate structure |
| 02/09/1999 | US5869862 High integration semiconductor device |
| 02/09/1999 | US5869861 Coaxial capacitor for DRAM memory cell |
| 02/09/1999 | US5869860 Ferroelectric memory device and method for producing the device |
| 02/09/1999 | US5869859 DRAM capacitor having lower electrode and dielectric layer of same planar shape preformed on field DRAM oxide film |
| 02/09/1999 | US5869858 Semiconductor device for reducing variations in characteristics of the device |
| 02/09/1999 | US5869857 CMOS photodetectors with wide range operating region |
| 02/09/1999 | US5869855 Charge-coupled device with photo chromic layer |
| 02/09/1999 | US5869854 Solid-state imaging device and method of manufacturing the same |
| 02/09/1999 | US5869853 Linear charge-coupled device having improved charge transferring characteristics |
| 02/09/1999 | US5869852 Semiconductor integrated circuit and semiconductor integrated circuit having layout designed by cell base system |
| 02/09/1999 | US5869851 High multiplication factor and excellent response speed, is useful in industrial field, and can be laminated onto a circuit existing semiconcuctor substrate by eliminating spikes and notch at the heterojunction |
| 02/09/1999 | US5869845 Resonant tunneling memory |
| 02/09/1999 | US5869843 Memory array having a multi-state element and method for forming such array or cells thereof |
| 02/09/1999 | US5869837 Radiation imaging panel |
| 02/09/1999 | US5869834 Photodetector having an integrated function for elimination of the effects of stray light |
| 02/09/1999 | US5869382 Structure of capacitor for dynamic random access memory and method of manufacturing thereof |
| 02/09/1999 | US5869376 Production method for semiconductor device having field-shield isolation structure |
| 02/09/1999 | US5869373 Source/drain regions for metal oxide semiconductor field effective transitor memory cells are formed from intrinsic amorphous silicon, instead of highly doped polysilicon |
| 02/09/1999 | US5869368 Method to increase capacitance |
| 02/09/1999 | US5869367 Method of forming a capacitor |
| 02/09/1999 | US5869366 Method for forming voltage clamp having a breakdown voltage of 40 Vdc |
| 02/09/1999 | US5869362 Forming a transluscent silicon oxide film including a metal element on a first portion of a silicon semiconductor film, selective crystallization of semiconductor film by heating; irradiation first part and second portion with laser light |
| 02/09/1999 | US5869354 Forming a etch stop layer in the substrate parallel to the principal surface, forming semiconductor on the principal surface, depositing a low stress dielectric membranes over semiconductor, etching etch barrier and a substrate portion |
| 02/09/1999 | US5869352 Method of manufacturing an amplifying solid-state imaging device |
| 02/09/1999 | US5869221 Method of fabricating an LED array |
| 02/04/1999 | WO1999005789A2 Voltage tolerant bus hold latch |
| 02/04/1999 | WO1999005723A1 A dual bandwidth bolometer |
| 02/04/1999 | WO1999005720A2 Cmos circuit and method for the production thereof |
| 02/04/1999 | WO1999005715A1 Semiconductor device and method of producing the same |
| 02/04/1999 | WO1999005711A1 Producing microstructures or nanostructures on a support |
| 02/04/1999 | WO1999005689A1 Electrical device comprising a conductive polymer |
| 02/04/1999 | WO1998052278A3 An amplified mos biasing circuit for avoiding latch-up |
| 02/04/1999 | DE19830477A1 High temperature resistant semiconductor device |
| 02/04/1999 | DE19804009A1 Solid state memory cell circuit |
| 02/03/1999 | EP0895355A2 Digitally Controlled Delay Circuit |
| 02/03/1999 | EP0895331A1 Protection device for electrical load and power supply provided with such a device |
| 02/03/1999 | EP0895290A1 Edge termination method and structure for power mosfet |
| 02/03/1999 | EP0895289A2 Digital circuit in MOS Technology |