Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
10/1998
10/13/1998US5821769 Low voltage CMOS logic circuit with threshold voltage control
10/13/1998US5821750 CCD magnetic field detecting apparatus
10/13/1998US5821688 Flexible panel display having thin film transistors driving polymer light-emitting diodes
10/13/1998US5821629 Field isolation between active regions is not field oxide but doped silicon substrate; ultra-high density static random access memory cell
10/13/1998US5821601 Bipolar semiconductor integrated circuit with a protection circuit
10/13/1998US5821600 Isolation by active transistors with grounded gates
10/13/1998US5821598 Pyroelectric detector incorporating ferroelectric layer in transistor
10/13/1998US5821597 Photoelectric conversion device
10/13/1998US5821592 Dynamic random access memory arrays and methods therefor
10/13/1998US5821591 High density read only memory cell configuration and method for its production
10/13/1998US5821590 Prevents increase of contact resistance
10/13/1998US5821589 Semiconductor device
10/13/1998US5821587 Semiconductor device
10/13/1998US5821586 Semiconductor device including a protective element having negative resistance characteristic
10/13/1998US5821582 Structures for preventing reverse engineering of integrated circuits
10/13/1998US5821581 Non-volatile memory cell structure and process for forming same
10/13/1998US5821580 MOS device having a trench gate structure
10/13/1998US5821579 Semiconductor memory device and method of manufacturing the same
10/13/1998US5821578 Semiconductor switching element, programmable functional device, and operation methods for programmable functional device
10/13/1998US5821575 Compact self-aligned body contact silicon-on-insulator transistor
10/13/1998US5821574 Charge-coupled device having different light-receiving region and charge isolation layer structures
10/13/1998US5821573 Field effect transistor having an arched gate and manufacturing method thereof
10/13/1998US5821572 Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection
10/13/1998US5821571 Dual sided integrated electro-optical package
10/13/1998US5821567 High-resolution light-sensing and light-emitting diode array
10/13/1998US5821564 TFT with self-align offset gate
10/13/1998US5821563 Semiconductor device free from reverse leakage and throw leakage
10/13/1998US5821562 Semiconductor device formed within asymetrically-shaped seed crystal region
10/13/1998US5821559 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
10/13/1998US5821558 Antifuse structures
10/13/1998US5821540 Semiconductor radiation-detecting device
10/13/1998US5821532 Imager package substrate
10/13/1998US5821165 Forming a polysilicon and a silicon nitride dielectric film on insulator film, pattering nitride, performing thermal oxidation of polysilicon using nitride pattern as mask, removing nitride film, etching polysilicon using oxide mask
10/13/1998US5821160 Method for forming a laser alterable fuse area of a memory cell using an etch stop layer
10/13/1998US5821159 Thin film transistor substrate having low resistive and chemical resistant electrode interconnections and method of forming the same
10/13/1998US5821152 Methods of forming hemispherical grained silicon electrodes including multiple temperature steps
10/13/1998US5821151 Preferentially etching doped polysilicon coating masked by pattern of doped silicon oxide remaining on surface after chemomechanical polishing to remove discontinuous overcoating of undoped, oxidized silicon dots; simplification
10/13/1998US5821150 Forming a pair of openings in semiconductor material, plugging openings with electrically conductive material to form electrodes with semiconductor material between them
10/13/1998US5821146 Method of fabricating FET or CMOS transistors using MeV implantation
10/13/1998US5821143 Fabrication methods for nonvolatile memory devices including extended sidewall electrode
10/13/1998US5821142 Method for forming a capacitor with a multiple pillar structure
10/13/1998US5821141 Dynamic random access memory; wide upper hemispherical plug and narrower lower plug holes; formed by either isotropic etch followed by anisotropic etch; or etching layers with different etch rates
10/13/1998US5821140 Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
10/13/1998US5821139 Method for manufacturing a DRAM with increased electrode surface area
10/13/1998US5821138 Forming multilayer of first and second insulating films, an amorophous silicon films, holding a metal element that enhance the crystallization of silicon, crystallization by heat treatment, forming thin film transistor and sealing film
10/13/1998US5821137 Thin film semiconductor device including a driver and a matrix circuit
10/13/1998US5821136 Inverted field-effect device with polycrystalline silicon/germanium channel
10/13/1998US5821133 Method of manufacturing active matrix substrate
10/13/1998US5821005 Ferroelectrics thin-film coated substrate and manufacture method thereof and nonvolatile memory comprising a ferroelectrics thinfilm coated substrate
10/13/1998US5820650 Optical processing apparatus and optical processing method
10/08/1998WO1998044568A2 X-ray apparatus with sensor matrix
10/08/1998WO1998044567A1 Nonvolatile semiconductor storage device and method for manufacturing the same and semiconductor device and method for manufacturing the same
10/08/1998WO1998044565A1 A scalable flash eeprom memory cell and array
10/08/1998WO1998044563A1 Photoelectric conversion integrated circuit device
10/08/1998WO1998044560A1 Multiple gated mosfet for use in dc-dc converter
10/08/1998WO1998044558A1 Method and device for reducing electric field concentrations in soi semiconductor components
10/08/1998WO1998044553A1 Process for fabricating a diffused emitter bipolar transistor
10/08/1998WO1998044552A2 Method of manufacturing a non-volatile memory combining an eprom with a standard cmos process
10/08/1998WO1998044498A1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves
10/08/1998WO1998021755A3 Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
10/08/1998WO1998018152A3 Programmable integrated passive devices and methods therefor
10/08/1998DE19747589A1 Nonvolatile memory device
10/08/1998DE19742345A1 Transistor memory cell device for e.g. dynamic memory
10/08/1998DE19739273C1 Monolithic integrated power output stage with protection of output transistor
10/08/1998DE19739072A1 Booster circuit for driving supply voltage using condenser unit, E.G for DRAM
10/08/1998CA2285278A1 Method and device for reducing electric field concentrations in soi semiconductor components
10/07/1998EP0869616A2 Output circuit, input circuit and input/output circuit
10/07/1998EP0869557A2 Ferroelectric memory cell and method of making the same
10/07/1998EP0869556A1 Microstructure and methods for fabricating such structure
10/07/1998EP0869552A2 DRAM with asymmetrical channel doping
10/07/1998EP0869551A2 Interconnect structure between at least two areas of a first type of conductivity
10/07/1998EP0869547A2 Semiconductor device and manufacture method thereof
10/07/1998EP0869511A2 Semiconductor memory cell and method of manufacturing the same
10/07/1998EP0868752A1 Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
10/07/1998EP0868745A2 Method of producing a neuron mos transistor on the basis of a cmos process
10/07/1998CN1195425A Method of producing EEPROM semiconductor structure
10/07/1998CN1195198A Semiconductor integrated-circuit device having n-type and p-type semiconductor conductive regions formed in contact with each other
10/07/1998CN1195197A Non-volatile memory device and method for fabricating same
10/07/1998CN1195196A 半导体集成电路装置 The semiconductor integrated circuit device
10/07/1998CN1195195A Semiconductor device comprising high density integrated circuit having large number of insulated gate field effect transistors
10/07/1998CN1195193A Semiconductor device and method of manufacturing same
10/07/1998CN1195192A Semiconductor device and method of fabricating same
10/07/1998CN1195190A Microstructure and methods for fabricating such structure
10/07/1998CN1040164C Semiconductor device and method for fabricating same
10/06/1998US5818792 Semiconductor memory device and memory module using the same
10/06/1998US5818790 Method for driving word lines in semiconductor memory device
10/06/1998US5818784 Semiconductor memory device and memory system
10/06/1998US5818773 Semiconductor storage device
10/06/1998US5818761 Non-volatile semiconductor memory device capable of high speed programming/erasure
10/06/1998US5818760 Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device
10/06/1998US5818750 Static memory cell
10/06/1998US5818749 Integrated circuit memory device
10/06/1998US5818748 Chip function separation onto separate stacked chips
10/06/1998US5818728 Mapping of gate arrays
10/06/1998US5818549 Active matrix substrate and manufacturing method of the same
10/06/1998US5818526 Solid state image pickup device having a number of vertical scanning circuit units which is half the number of pixels in the vertical direction
10/06/1998US5818480 Method and apparatus to control electrodes in a print unit
10/06/1998US5818322 Silicon photosensitive element
10/06/1998US5818315 Signal trace impedance control using a grid-like ground plane
10/06/1998US5818290 Bias voltage controlling apparatus with complete feedback control
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