Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
03/1999
03/31/1999EP0905785A2 High density semiconductor memory
03/31/1999EP0905784A2 Trench capacitor DRAM cell
03/31/1999EP0905783A1 Vertical transistor implemented in a memory cell comprising a trench capacitor
03/31/1999EP0905782A1 Integrated semiconductor circuit including electrostatic discharge protection means
03/31/1999EP0905781A2 ESD protection diode
03/31/1999EP0905780A2 Integrated circuit with a protection structure against electrostatic discharge
03/31/1999EP0905778A2 Improved multi-level conductive structure and methods therefor
03/31/1999EP0905777A1 Method for the linear arrangement of metallic fuse sections on wafers
03/31/1999EP0905773A2 Method of making an integrated circuit comprising forming spacers from an interlevel dielectric layer
03/31/1999EP0905772A2 Trench capacitor DRAM cell and method of making the same
03/31/1999EP0905771A2 Trench capacitor DRAM cell and method of making the same
03/31/1999EP0905770A1 Method of fabrication semiconductor chips with silicide and implanted junctions
03/31/1999EP0905769A2 Semiconductor integrated circuit device with bipolar transistors and method of fabricating same
03/31/1999EP0905767A1 Method of fabricating an SOI wafer and SOI wafer fabricated thereby
03/31/1999EP0905765A2 Endpoint detection method and apparatus
03/31/1999EP0905760A2 Integrated MOS capacitor fabrication method and structure
03/31/1999EP0905757A2 Improved techniques for etching a silicon dioxide-containing layer
03/31/1999EP0905753A2 Method for fabricating a conducting electrode for semiconductor device
03/31/1999EP0905751A2 Method for minimizing lateral and vertical dopant diffusion in gate structures
03/31/1999EP0905750A2 Reliable polycide gate stack with reduced sheet resistance
03/31/1999EP0905749A2 Reduction of pad erosion
03/31/1999EP0905723A2 Amorphous dielectric materials and capacitors employing the same
03/31/1999EP0905705A2 Space-efficient semiconductor memory having hierarchical column select line architecture
03/31/1999EP0905703A2 Semiconductor memory having space-efficient layout
03/31/1999EP0905701A2 Semiconductor memory having hierarchical bit line architecture with non-uniform local bit lines
03/31/1999EP0905672A1 Stacked display device and method of driving the same
03/31/1999EP0905597A1 A method and apparatus for reducing the bias current in a reference voltage circuit
03/31/1999EP0905278A1 Method of manufacturing a ceramic coating
03/31/1999EP0905277A1 Process for making a Bi-containing ceramic layer like strontium-bismuth-tantalate
03/31/1999EP0904655A1 Calibration method and system for imaging devices
03/31/1999EP0904636A1 Power device with a short-circuit detector
03/31/1999EP0904588A1 A device and method for multi-level charge/storage and reading out
03/31/1999EP0737364B1 Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier
03/31/1999EP0733284B1 Power switch protected against overcurrents
03/31/1999CN1212734A Misted precursor deposition apparatus and method with improved mist and mist flow
03/31/1999CN1212509A Electrostatic protection circuit
03/31/1999CN1212470A Digital switch circuit in MOS technology
03/31/1999CN1212468A Self-aligned drain contact PMOS flash memory and process for making same
03/31/1999CN1212467A Semiconductor integrated circuit device including memory device
03/31/1999CN1212466A Nonvolatile semiconductor storage apparatus and production method of same
03/31/1999CN1212462A Semiconductor device and manufacturing method thereof
03/31/1999CN1212460A Semiconductor device having function blocks with obliquely arranged signal terminals connected through two-dimensionally extensible signal lines
03/31/1999CN1212458A Method for making charge storage structure
03/31/1999CN1212457A Improved techniques for forming electrically blowable fuses on integrated circuit
03/31/1999CN1212455A Formation of bottle shaped trench
03/31/1999CN1212454A High reliable trench capacitor type memor cell
03/31/1999CN1212452A Three-dimensional read-only memory
03/31/1999CN1212434A Ferroelectric random access memory device with reference cell array blocks
03/31/1999CN1212432A Dimension programmable fusebanks and methods for making the same
03/30/1999USRE36169 Semiconductor memory device
03/30/1999US5889902 Monolithic integrated optoelectronic semiconductor component and process for manufacturing the same
03/30/1999US5889787 Circuit including structural testing means with no dedicated test pad for testing
03/30/1999US5889722 Hybrid integrated circuit device and method of fabricating the same
03/30/1999US5889718 Dynamic type semiconductor memory device
03/30/1999US5889711 Memory redundancy for high density memory
03/30/1999US5889705 Method for erasing electrically erasable and programmable memory cells
03/30/1999US5889704 Load and leave memory cell
03/30/1999US5889700 High density EEPROM array using self-aligned control gate and floating gate for both access transistor and memory cell and method of operating same
03/30/1999US5889696 Thin-film capacitor device and RAM device using ferroelectric film
03/30/1999US5889694 Dual-addressed rectifier storage device
03/30/1999US5889682 Clock routing design method using a hieraichical layout design
03/30/1999US5889644 Device and method for electrostatic discharge protection of a circuit device
03/30/1999US5889573 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment
03/30/1999US5889427 Voltage step-up circuit
03/30/1999US5889335 Semiconductor device and method of manufacturing the same
03/30/1999US5889334 Semiconductor integrated circuit and fabrication method therefor
03/30/1999US5889329 Tri-directional interconnect architecture for SRAM
03/30/1999US5889316 Radiation shielding of plastic integrated circuits
03/30/1999US5889315 Semiconductor structure having two levels of buried regions
03/30/1999US5889314 Mixed-mode IC having an isolator for minimizing cross-talk through substrate and method of fabricating same
03/30/1999US5889313 Three-dimensional architecture for solid state radiation detectors
03/30/1999US5889312 Semiconductor device having circuit element in stress gradient region by film for isolation and method of manufacturing the same
03/30/1999US5889310 Semiconductor device with high breakdown voltage island region
03/30/1999US5889309 Electrostatic discharge protection circuit
03/30/1999US5889308 Semiconductor device having an electrostatic discharging protection circuit using a non-ohmic material
03/30/1999US5889306 Bulk silicon voltage plane for SOI applications
03/30/1999US5889305 Non-volatile semiconductor memory device having storage cell array and peripheral circuit
03/30/1999US5889304 Nonvolatile semiconductor memory device
03/30/1999US5889303 Split-Control gate electrically erasable programmable read only memory (EEPROM) cell
03/30/1999US5889302 Multilayer floating gate field effect transistor structure for use in integrated circuit devices
03/30/1999US5889301 Semiconductor memory device having an E-shaped storage node
03/30/1999US5889300 Capacitor with containers members
03/30/1999US5889296 Semiconductor optical device and an optical processing system that uses such a semiconductor optical system
03/30/1999US5889293 Electrical contact to buried SOI structures
03/30/1999US5889291 Semiconductor integrated circuit
03/30/1999US5889288 Semiconductor quantum dot device
03/30/1999US5889277 Planar color filter array for CCDs with embedded color filter elements
03/30/1999US5888904 Method for manufacturing polysilicon with relatively small line width
03/30/1999US5888895 Annealing in nitrogen and hydrogen gas; covering with nitride layer; doping, etching, vapor deposition
03/30/1999US5888889 Integrated structure pad assembly for lead bonding
03/30/1999US5888878 Method of manufacturing semiconductor memory device
03/30/1999US5888876 Deep trench filling method using silicon film deposition and silicon migration
03/30/1999US5888874 Bipolar transistor and method of forming BiCMOS circuitry
03/30/1999US5888872 Method for forming source drain junction areas self-aligned between a sidewall spacer and an etched lateral sidewall
03/30/1999US5888871 Methods of forming EEPROM memory cells having uniformly thick tunnelling oxide layers
03/30/1999US5888869 Method of fabricating a flash memory device
03/30/1999US5888868 Method for fabricating EPROM device
03/30/1999US5888866 Method for fabricating capacitors of a dynamic random access memory
03/30/1999US5888865 Method for manufacturing dram capacitor
03/30/1999US5888864 Manufacturing method of DRAM Cell formed on an insulating layer having a vertical channel
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