| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 07/03/2001 | US6255195 Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method |
| 07/03/2001 | US6255183 Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacers |
| 07/03/2001 | US6255171 Method of making dense SOI flash memory array structure |
| 07/03/2001 | US6255170 Flash memory and method for fabricating the same |
| 07/03/2001 | US6255167 Method of forming high density buried bit line flash EEPROM memory cell with a shallow trench floating gate |
| 07/03/2001 | US6255166 Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
| 07/03/2001 | US6255164 EPROM cell structure and a method for forming the EPROM cell structure |
| 07/03/2001 | US6255163 Process for manufacturing selection transistors for nonvolatile serial-flash, EPROM, EEPROM and flash-EEPROM memories in standard or AMG configuration |
| 07/03/2001 | US6255159 Method to form hemispherical grained polysilicon |
| 07/03/2001 | US6255158 Process of manufacturing a vertical dynamic random access memory device |
| 07/03/2001 | US6255157 Method for forming a ferroelectric capacitor under the bit line |
| 07/03/2001 | US6255155 Nonvolatile memory and method for fabricating the same |
| 07/03/2001 | US6255153 Method of manufacturing a semiconductor device |
| 07/03/2001 | US6255151 Semiconductor integrated circuit device and method of manufacturing same |
| 07/03/2001 | US6255146 Thin film transistor and a method of manufacturing thereof |
| 07/03/2001 | US6255145 Process for manufacturing patterned silicon-on-insulator layers with self-aligned trenches and resulting product |
| 07/03/2001 | US6255134 Method for making high-frame-rate CCD imaging devices from otherwise ordinary and inexpensive CCD devices |
| 07/03/2001 | US6255133 Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same |
| 07/03/2001 | US6255122 Amorphous dielectric capacitors on silicon |
| 06/28/2001 | WO2001047322A1 Organic electroluminescence display |
| 06/28/2001 | WO2001047117A1 High sheet mos resistor method and apparatus |
| 06/28/2001 | WO2001047045A1 Solution processing |
| 06/28/2001 | WO2001047044A2 Forming interconnects |
| 06/28/2001 | WO2001047043A1 Solution processed devices |
| 06/28/2001 | WO2001047039A1 Method of making a iii-nitride light-emitting device with increased light generating capability |
| 06/28/2001 | WO2001047036A1 Iii-nitride light-emitting device with increased light generating capability |
| 06/28/2001 | WO2001047022A1 Optical test structure for measuring charge-transfer efficiency |
| 06/28/2001 | WO2001047021A1 Method and apparatus for achieving uniform low dark current with cmos photodiodes |
| 06/28/2001 | WO2001047020A1 Process for manufacturing a thin film solar cell sheet with solar cells connected in series |
| 06/28/2001 | WO2001047019A1 Non-volatile nor semiconductor memory device and method for the programming thereof |
| 06/28/2001 | WO2001047018A1 Electrostatic discharge proteciton network having distributed components connected with inductors |
| 06/28/2001 | WO2001047017A1 Integrated circuit with removable esd protection |
| 06/28/2001 | WO2001047012A1 Non-volatile memory cells and periphery |
| 06/28/2001 | WO2001047005A1 Metal mask etching of silicon |
| 06/28/2001 | WO2001046989A2 Decoupling capacitors for thin gate oxides |
| 06/28/2001 | WO2001046987A2 Inkjet-fabricated integrated circuits |
| 06/28/2001 | WO2001046655A1 Photodetector and method for detecting radiation |
| 06/28/2001 | WO2001039251A9 High performance output buffer with esd protection |
| 06/28/2001 | WO2001006546A9 Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration |
| 06/28/2001 | WO2001004962A3 Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
| 06/28/2001 | WO2001004949A9 Nand type flash memory device |
| 06/28/2001 | US20010005633 Providing in core and monitor areas a select oxide layer, a select gate layer, an insulating layer, a control gate layer, and a cap layer on the substrate, placing a mask over core and monitor areas, performing second gate etch |
| 06/28/2001 | US20010005631 Method for manufacturing an electrode of a capacitor |
| 06/28/2001 | US20010005624 Semiconductor integrated circuit device and process for manufacturing the same |
| 06/28/2001 | US20010005622 Method for manufacturing gate electrode with vertical side profile |
| 06/28/2001 | US20010005620 Process for manufacturing semiconductor device |
| 06/28/2001 | US20010005616 Method for fabricating semiconductor device |
| 06/28/2001 | US20010005615 Method for manufacturing shallow trench isolation in semiconductor device |
| 06/28/2001 | US20010005614 Method for fabricating semiconductor device |
| 06/28/2001 | US20010005613 Semiconductor device and method of fabricating the same |
| 06/28/2001 | US20010005612 Next generation semiconductor memory devices of >256M grade by forming an amorphous tantalum oxynitride thin film over the lower electrode, heating in ammonia to form tantalum nitride (stoichiometric) with a film of high dielectric |
| 06/28/2001 | US20010005611 Method of manufacturing semiconductor device |
| 06/28/2001 | US20010005610 Semiconductor device having metal silicide film and manufacturing method thereof |
| 06/28/2001 | US20010005609 Semiconductor device having a capacitor and method for the manufacture thereof |
| 06/28/2001 | US20010005608 Method for semiconductor manufacturing |
| 06/28/2001 | US20010005607 A liquid crystal display having the insulator film and display electrode surfaces contain an impurity having high electronegativity to prevent transmission of moisture and gas and stabilizing the display electrode (indium tin oxide) |
| 06/28/2001 | US20010005606 Laser irradiation apparatus and method of fabricating a semiconductor device |
| 06/28/2001 | US20010005605 High-temperature heat treatment of the oxidized film to drive out contamination acquired from the doped layer beneath to improve the quality of the oxidized film such as durability against a high voltage |
| 06/28/2001 | US20010005604 Fuse area structure including protection film on sidewall of fuse opening in semiconductor device and method of forming the same |
| 06/28/2001 | US20010005597 Method for manufacturing fringe field switching mode liquid crystal display device |
| 06/28/2001 | US20010005596 Method for manufacturing thin film transistor liquid crystal display |
| 06/28/2001 | US20010005333 Non-volatile memory structure and corresponding manufacturing process |
| 06/28/2001 | US20010005332 Non- volatile semiconductor memory device and method of forming the same |
| 06/28/2001 | US20010005330 Nand-type flash memory device and method of operating the same |
| 06/28/2001 | US20010005329 Failure-analyzing semiconductor device and semiconductor device manufacturing method using the same |
| 06/28/2001 | US20010005328 Non-volatile semiconductor memory device |
| 06/28/2001 | US20010005325 Semiconductor memory device |
| 06/28/2001 | US20010005263 Photosensitive charge-accumulating device and a lidar incorporating such a device |
| 06/28/2001 | US20010005228 Solid state image sensing device |
| 06/28/2001 | US20010005227 Solid-state imaging device |
| 06/28/2001 | US20010005224 CMOS image sensor for providing wider dynamic range |
| 06/28/2001 | US20010005163 Semiconductor integrated circuit |
| 06/28/2001 | US20010005159 Voltage generation circuit and display unit comprising voltage generation circuit |
| 06/28/2001 | US20010005153 Semiconductor integrated circuit |
| 06/28/2001 | US20010005148 Semiconductor intergrated circuit having logic circuit comprising transistors with lower threshold voltage values and improved pattern layout |
| 06/28/2001 | US20010005059 Three-dimensional semiconductor integrated circuit apparatus and manufacturing method therefor |
| 06/28/2001 | US20010005058 Integrated circuit and method |
| 06/28/2001 | US20010005055 Semiconductor device and manufacturing method thereof |
| 06/28/2001 | US20010005033 Semiconductor device and its manufacture |
| 06/28/2001 | US20010005030 Semiconductor device and fabrication method |
| 06/28/2001 | US20010005029 Semiconductor device lacking steeply rising structures and fabrication method of the same |
| 06/28/2001 | US20010005026 Conductive thin film, a capacitor using the same and a method of manufacturing. |
| 06/28/2001 | US20010005022 Semiconductor device |
| 06/28/2001 | US20010005020 Thin film transistor and method of fabricating the same |
| 06/28/2001 | US20010005019 Active matrix display device |
| 06/28/2001 | US20010005018 Unit pixel of CMOS image sensor with capacitor coupled photodiode |
| 06/28/2001 | US20010005011 Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same |
| 06/28/2001 | US20010004790 Electrical connections to dielectric materials |
| 06/28/2001 | DE19961683A1 Bauteil mit Dünnschichtschaltkreis Component with thin-film circuit |
| 06/28/2001 | DE19961675A1 Bauteil mit Dünnschichtschaltkreis mit trimmbarem Kondensator Component with thin-film circuit with capacitor trimmbarem |
| 06/28/2001 | DE19961673A1 Flacher Röntgendetektor mit Alkalihalogenid-Scintillator Flat X-ray detector with alkali halide scintillator |
| 06/28/2001 | DE19960563A1 Semiconductor structure used in integrated circuits comprises conducting pathway folded in trenches in such a way that its length within each trench is double depth of trench |
| 06/28/2001 | DE19957122A1 Production of a ferroelectric capacitor on a semiconductor substrate comprises depositing a ferroelectric capacitor material over a first electrode, producing a second electrode and applying an alternating voltage on the capacitor |
| 06/28/2001 | DE10064654A1 Ruthenium layer, useful for the production of capacitors, has a high oxygen concentration towards the surface of the underlayer and a lower value in the direction of the outer coating surface . |
| 06/28/2001 | DE10051599A1 Semiconductor device with an improved contact pin structure and method for producing it places a conductive contact pin in an intermediate insulating film layer and on an insulating layer to insulate semiconductor elements. |
| 06/28/2001 | DE10041620A1 Capacitor element used for a semiconductor storage device comprises an insulating layer, recesses divided by a separating wall, storage node layers formed on the surface of the recesses, a dielectric capacitor layer and a cell plate layer |
| 06/28/2001 | DE10032210A1 Kondensator für Halbleiterspeicherbauelement und Verfahren zu dessen Herstellung Capacitor for the semiconductor memory device and method for its production |
| 06/28/2001 | DE10004872C1 Metal oxide semiconductor field effect transistor arrangement has source, drain and gates embedded between a column protruding from semiconductor body and insulator surrounding the column and arranged on body |
| 06/28/2001 | CA2829416A1 Solution processed devices |
| 06/28/2001 | CA2395004A1 Solution processing |