| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 07/26/2001 | US20010009287 High breakdown voltage MOS type semiconductor apparatus |
| 07/26/2001 | US20010009285 Semiconductor memory device and method of manufacturing same |
| 07/26/2001 | US20010009284 Bottom electrode of capacitor and fabricating method thereof |
| 07/26/2001 | US20010009283 Semiconductor device and method of manufacturing the semiconductor device |
| 07/26/2001 | US20010009282 Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium |
| 07/26/2001 | US20010009280 Organic electroluminescence display device |
| 07/26/2001 | DE19963805A1 Weißlichtquelle auf der Basis nichtlinear-optischer Prozesse The white light source based on non-linear optical processes |
| 07/26/2001 | DE19963500A1 Verfahren zum Herstellen einer strukturierten metalloxidhaltigen Schicht A method of manufacturing a structured metal-oxide layer |
| 07/26/2001 | DE19940581C2 Verfahren zur Herstellung integrierter Sensoren A process for manufacturing integrated sensors |
| 07/26/2001 | DE10100695A1 Halbleitervorrichtung Semiconductor device |
| 07/26/2001 | DE10065887A1 Photosensor circuit switches ON fourth MOS transistor when second MOS transistor has been turned OFF and capacitor is opened after preset time |
| 07/26/2001 | DE10065350A1 Production of a semiconductor device used as a DRAM comprises a multiple step process to form a capacitor-dielectric layer which is covered by an upper electrode layer |
| 07/26/2001 | DE10065224A1 Production of a capacitor used in the production of semiconductor devices comprises using a multiple step process to form a dielectric layer and thin layers of amorphous tantalum oxynitride |
| 07/26/2001 | DE10064068A1 Production of a capacitor comprises forming an intermediate insulating layer on a semiconductor substrate, forming a lower electrode, depositing a thin layer, heating and/or calcining or tempering and forming an upper electrode |
| 07/26/2001 | DE10064002A1 Vielschicht-Dünnschichtstruktur, ferroelektrisches Dünnschichtelement und Verfahren zur Herstellung derselben Multilayer thin film structure, the ferroelectric thin-film element and process for producing same |
| 07/26/2001 | DE10051601A1 Semiconductor device with multi-layer interconnection structure has blind conductors and stops embedded in insulating layers of LSI circuits |
| 07/26/2001 | DE10032219A1 Method for the manufacture of semiconductor device with capacitor above semiconductor device which forms one plate and terminal of capacitor in one step |
| 07/26/2001 | DE10001118A1 Production of a semiconductor component comprises forming a switching transistor on a substrate, applying a first insulating layer, applying a storage capacitor and a metal oxide-containing layer and applying a second insulating layer |
| 07/25/2001 | EP1119189A2 CMOS image sensor with analog memory |
| 07/25/2001 | EP1119059A2 Organic light emitting structure |
| 07/25/2001 | EP1119051A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119050A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119044A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119043A2 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119036A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119027A2 A capacitor for integration with copper damascene structure and manufacturing method |
| 07/25/2001 | EP1118928A1 Circuit for controlling the power consumption of an integrated circuit |
| 07/25/2001 | EP1118867A1 Method for testing a CMOS integrated circuit |
| 07/25/2001 | EP1118208A1 Measuring distances with a camera |
| 07/25/2001 | EP1118126A1 Photosensor and photosensor system |
| 07/25/2001 | EP1118124A1 Bipolar transistor and method for producing same |
| 07/25/2001 | EP1118123A1 Organic electroluminescent display device |
| 07/25/2001 | EP1118116A1 Substrate with an indentation for an integrated circuit device and method for the production thereof |
| 07/25/2001 | EP1118108A1 Method for the transfer of thin layers of monocrystalline material onto a desirable substrate |
| 07/25/2001 | EP1118072A1 Method for producing a component and corresponding component |
| 07/25/2001 | EP0920435A4 Platinum source compositions for chemical vapor deposition of platinum |
| 07/25/2001 | EP0904588B1 A device and method for multi-level charge/storage and reading out |
| 07/25/2001 | CN1305641A Production method of structured electrodes |
| 07/25/2001 | CN1305234A Magnetic tunnel device, magnetic storage and element using said device and its access method |
| 07/25/2001 | CN1305232A MOSFET memory with composite nm-grain Ge/Si float grid structure |
| 07/25/2001 | CN1305230A Tunnel transistor suitable for nonvolatile storage |
| 07/25/2001 | CN1305229A Optimized floating P+area photoelectric diode for CMOS image sensor |
| 07/25/2001 | CN1305228A Semiconductor device |
| 07/25/2001 | CN1305227A Actire matrix display device |
| 07/25/2001 | CN1305222A Method of manufacturing thin film transistor |
| 07/25/2001 | CN1305177A Control method for making operation mode of integrated circuit uncertain |
| 07/25/2001 | CN1305112A 2D scan tree structure for measurable scan design of low-power integrated circuits |
| 07/24/2001 | US6266800 System and method for eliminating effects of parasitic bipolar transistor action in dynamic logic using setup time determination |
| 07/24/2001 | US6266600 Road surface friction sensor and road surface friction coefficient detector, and vehicle antilock braking device |
| 07/24/2001 | US6266438 Architecture for color space transformation to compensate for relative chip-to-chip spectral variations on a butted full-width array sensor bar |
| 07/24/2001 | US6266286 Wafer burn-in test circuit and method for testing a semiconductor memory device |
| 07/24/2001 | US6266279 Nonvolatile semiconductor memory device, method for reading data from the nonvolatile semiconductor memory device, and method for writing data into the nonvolatile semiconductor memory device |
| 07/24/2001 | US6266278 Dual floating gate EEPROM cell array with steering gates shared adjacent cells |
| 07/24/2001 | US6266276 Non-volatile semiconductor memory device and internal operation method for said non-volatile semiconductor memory device |
| 07/24/2001 | US6266275 Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for nand array flash memory |
| 07/24/2001 | US6266272 Partially non-volatile dynamic random access memory formed by a plurality of single transistor cells used as DRAM cells and EPROM cells |
| 07/24/2001 | US6266266 Integrated circuit design exhibiting reduced capacitance |
| 07/24/2001 | US6266265 Memory module using a vacant pin terminal for balancing parasitic capacitive loads |
| 07/24/2001 | US6266264 Word line straps using two different layers of metal |
| 07/24/2001 | US6266227 Thin-film capacitor |
| 07/24/2001 | US6266226 Capacitor |
| 07/24/2001 | US6266222 ESD protection network for circuit structures formed in a semiconductor |
| 07/24/2001 | US6266087 Circuit and technique for smear subtraction in CCD image sensors |
| 07/24/2001 | US6266037 Wafer based active matrix |
| 07/24/2001 | US6266036 Two-dimensional light-emitting element array device and method for driving the same |
| 07/24/2001 | US6265932 Substrate control voltage circuit of a semiconductor memory |
| 07/24/2001 | US6265778 Semiconductor device with a multi-level interconnection structure |
| 07/24/2001 | US6265756 Electrostatic discharge protection device |
| 07/24/2001 | US6265755 Semiconductor integrated circuit comprising MIS capacitors |
| 07/24/2001 | US6265751 Method and system for reducing ARC layer removal by condensing the ARC layer |
| 07/24/2001 | US6265748 Storage cell arrangement in which vertical MOS transistors have at least three different threshold voltages depending on stored data, and method of producing said arrangement |
| 07/24/2001 | US6265747 Semiconductor device having OHMIC connection that utilizes peak impurity concentration region |
| 07/24/2001 | US6265746 Highly resistive interconnects |
| 07/24/2001 | US6265745 Method for producing insulated gate thin film semiconductor device |
| 07/24/2001 | US6265742 Memory cell structure and fabrication |
| 07/24/2001 | US6265741 Trench capacitor with epi buried layer |
| 07/24/2001 | US6265740 Semiconductor device capacitor using a fill layer and a node on an inner surface of an opening |
| 07/24/2001 | US6265739 Non-volatile semiconductor memory device and its manufacturing method |
| 07/24/2001 | US6265738 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures |
| 07/24/2001 | US6265737 Circuit for integrating light-induced charges with improved linearity |
| 07/24/2001 | US6265736 Image pick-up apparatus |
| 07/24/2001 | US6265728 Compound semiconductor device and method for controlling characteristics of the same |
| 07/24/2001 | US6265705 Alignment apparatus and method for an imaging system |
| 07/24/2001 | US6265653 High voltage photovoltaic power converter |
| 07/24/2001 | US6265652 Integrated thin-film solar battery and method of manufacturing the same |
| 07/24/2001 | US6265328 Wafer edge engineering method and device |
| 07/24/2001 | US6265318 Heating the substrate to a temperature greater than about 150 degrees c., and etching the electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising chlorine, argon and bcl3, hbr, or hcl |
| 07/24/2001 | US6265292 Method of fabrication of a novel flash integrated circuit |
| 07/24/2001 | US6265280 Method for manufacturing a cylindrical semiconductor capacitor |
| 07/24/2001 | US6265278 Deep trench cell capacitor with inverting counter electrode |
| 07/24/2001 | US6265277 Method for making a bipolar transistor for the protection of an integrated circuit against electrostatic discharges |
| 07/24/2001 | US6265276 Structure and fabrication of bipolar transistor |
| 07/24/2001 | US6265268 High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device |
| 07/24/2001 | US6265266 Method of forming a two transistor flash EPROM cell |
| 07/24/2001 | US6265265 Flash memory cell and fabricating method thereof |
| 07/24/2001 | US6265264 Method of doping and HSG surface of a capacitor electrode with PH3 under a low temperature/high pressure processing condition |
| 07/24/2001 | US6265261 Semiconductor device and fabricating method therefor in which a netride layer in a capacitor is formed in a shortened time period |
| 07/24/2001 | US6265260 Method for making an integrated circuit capacitor including tantalum pentoxide |
| 07/24/2001 | US6265251 Method to fabricate a thick oxide MOS transistor for electrostatic discharge protection in an STI process |
| 07/24/2001 | US6265248 Method for producing semiconductor-on-insulator structure with reduced parasitic capacitance |