Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
10/2002
10/22/2002US6469438 Organic electroluminescence device with prescribed optical path length
10/22/2002US6469400 Semiconductor memory device
10/22/2002US6469390 Device comprising thermally stable, low dielectric constant material
10/22/2002US6469366 Bipolar transistor with collector diffusion layer formed deep in the substrate
10/22/2002US6469365 Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component
10/22/2002US6469362 High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same
10/22/2002US6469356 Semiconductor memory device having different distances between gate electrode layers
10/22/2002US6469355 Configuration for voltage buffering in a dynamic memory using CMOS technology
10/22/2002US6469354 Semiconductor device having a protective circuit
10/22/2002US6469353 Integrated ESD protection circuit using a substrate triggered lateral NPN
10/22/2002US6469352 Two-terminal semiconductor overcurrent limiter
10/22/2002US6469351 Electrostatic breakdown prevention circuit for semiconductor device
10/22/2002US6469349 The gate, source, and drain electrodes of the mos transistor are formed in the trenches in the semiconductor substrate, and the transistor is surrounded by a thick sio2 film, so that a transistor of stable characteristics is obtained.
10/22/2002US6469348 Nonvolatile semiconductor memory device
10/22/2002US6469347 Buried-channel semiconductor device, and manufacturing method thereof
10/22/2002US6469346 High-breakdown-voltage semiconductor device
10/22/2002US6469343 Multi-level type nonvolatile semiconductor memory device
10/22/2002US6469341 Floating gate overlying a dielectric layer over an active region, that a side wall that has a slant edge defining a generally concave-shaped undercut edge, and vertical edges above said slant edge.
10/22/2002US6469340 Flash memory device with an inverted tapered floating gate
10/22/2002US6469339 A void within an opening filled with bpteos film suppresses occurrence of crystal defects in the silicon substrate, and the semiconductor device ensuring high reliability and high yield is obtained.
10/22/2002US6469338 Non-volatile semiconductor memory device and manufacturing method thereof
10/22/2002US6469337 Semiconductor memory device and manufacturing method and mask data preparing method for the same
10/22/2002US6469336 Structure for reducing contact aspect ratios
10/22/2002US6469335 Semiconductor memory having a memory cell array
10/22/2002US6469333 Semiconductor device having a ferroelectric film and a fabrication process thereof
10/22/2002US6469332 Pinned floating photoreceptor with active pixel sensor
10/22/2002US6469329 Solid state image sensing device and method of producing the same
10/22/2002US6469328 Semiconductor memory device
10/22/2002US6469327 Semiconductor device with efficiently arranged pads
10/22/2002US6469326 Radio frequency modules and modules for moving target detection
10/22/2002US6469325 Semiconductor integrated circuit device and its manufacture
10/22/2002US6469317 Semiconductor device and method of fabricating the same
10/22/2002US6469290 Solid-state image pickup apparatus in compliance with the arrangement of complementary color filter segments and a signal processing method therefor
10/22/2002US6469289 Ambient light detection technique for an imaging array
10/22/2002US6469242 Electrode lead-out structure; plurality of photovoltaic (pv) elements formed on a transparent insulating substrate.
10/22/2002US6468927 Method of depositing a nitrogen-doped FSG layer
10/22/2002US6468923 Method of producing semiconductor member
10/22/2002US6468922 Method for manufacturing a semiconductor device with a dual interlayer insulator film of borophosphosilicate glass to prevent diffusion of phosphorus
10/22/2002US6468919 Method of making a local interconnect in an embedded memory
10/22/2002US6468896 Method of fabricating semiconductor components
10/22/2002US6468887 Semiconductor device and a method of manufacturing the same
10/22/2002US6468884 Method of forming silicon-contained crystal thin film
10/22/2002US6468876 Simple stack cell capacitor formation
10/22/2002US6468875 Fabrication method of capacitor for integrated circuit
10/22/2002US6468874 Method of manufacturing a capacitor in a semiconductor device
10/22/2002US6468872 Method of fabricating a thin film transistor
10/22/2002US6468869 Method of fabricating mask read only memory
10/22/2002US6468868 Method of forming high density multi-state mask ROM cells
10/22/2002US6468867 Nitride mask layer, silicide is formed on the gate and not in the diffusion region, which are in the cell array region; semiconductor device with lower resistance and decrease in the leakage defects
10/22/2002US6468865 Method of simultaneous formation of bitline isolation and periphery oxide
10/22/2002US6468863 Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereof
10/22/2002US6468862 High capacitive-coupling ratio of stacked-gate flash memory having high mechanical strength floating gate
10/22/2002US6468861 Method for manufacturing non-volatile semiconductor memory
10/22/2002US6468860 Integrated circuit capable of operating at two different power supply voltages
10/22/2002US6468857 Method for forming a semiconductor device having a plurality of circuits parts
10/22/2002US6468855 Reduced topography DRAM cell fabricated using a modified logic process and method for operating same
10/22/2002US6468850 Method of manufacturing a semiconductor memory device
10/22/2002US6468849 Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technology
10/22/2002US6468848 Method of fabricating electrically isolated double gated transistor
10/22/2002US6468841 Process for producing crystalline silicon thin film
10/22/2002US6468840 Active matrix substrate and manufacturing method thereof
10/22/2002US6468839 Thin film semiconductor device for display and method of producing same
10/22/2002US6468838 Method for fabricating a MOS transistor of an embedded memory
10/22/2002US6468828 Method of manufacturing lightweight, high efficiency photovoltaic module
10/22/2002US6468827 Method for manufacturing image sensor chips
10/22/2002US6468826 Solid state image sensor using an intermediate refractive index antireflection film and method for fabricating the same
10/22/2002US6468825 Method for producing semiconductor temperature sensor
10/22/2002US6468819 Method for patterning organic thin film devices using a die
10/22/2002US6468812 Method for producing a semiconductor memory device with a multiplicity of memory cells
10/22/2002US6468715 Thermal mass transfer donor element
10/22/2002US6468676 Electron injection film is thin transparent fluoride of ia or iia metal, or complex of acetylacetonates, nitrosonaphthols, salicylaldoximes, cupferrons, benzoinoximes, bipyridines, phenanthrolines, prolines, benzoylacetones
10/22/2002US6468663 Semiconductor substrate and process for producing the same
10/22/2002US6468638 Electrically coupling an electrical interconnect layer on a flexible layer to blocks of a substrate; forming displays such as flat panel displays
10/22/2002US6468099 Semiconductor device fabricating method
10/17/2002WO2002082564A2 Method for selecting from a standardized set of integrated circuit mask features
10/17/2002WO2002082561A1 Patterning method
10/17/2002WO2002082558A2 Method for producing a semiconductor circuit and semiconductor circuits produced according to said method
10/17/2002WO2002082555A2 Matrix array devices with flexible substrates
10/17/2002WO2002082553A1 Semiconductor device
10/17/2002WO2002082550A2 Memory cell array and method for the production thereof
10/17/2002WO2002082549A1 Semiconductor integrated circuit device and its manufacturing method
10/17/2002WO2002082548A2 Integrated tuneable capacitor
10/17/2002WO2002082547A2 Single chip push-pull power transistor device
10/17/2002WO2002082546A2 Overvoltage protection device
10/17/2002WO2002082526A1 Semiconductor device and its manufacturing method
10/17/2002WO2002082515A1 Semiconductor structure and device including a carbon film
10/17/2002WO2002082510A1 Single transistor rare earth manganite ferroelectric nonvolatile memory cell
10/17/2002WO2002082461A2 Readout of array-based analog data in semiconductor-based devices
10/17/2002WO2002082460A1 Semiconductor non-volatile storage device
10/17/2002WO2002082456A1 Device and method for using complementary bits in a memory array
10/17/2002WO2002082452A2 Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same
10/17/2002WO2002082448A1 Identification of an integrated circuit from its physical manufacture parameters
10/17/2002WO2002081981A2 Thermoelectric device for dna genomic and proteonic chips and thermo-optical seitching circuits
10/17/2002WO2002067266A3 Method for writing into magnetoresistive memory cells and magnetoresistive memory which can be written into according to said method
10/17/2002WO2002054499A3 Infrared detector packaged with improved antireflection element
10/17/2002WO2002039455A8 Mram arrangement with selection transistors of large channel width
10/17/2002WO2002031867A3 Electronic structure having in-situ resistors
10/17/2002WO2002019431A3 Method and device to reduce gate-induced drain leakage (gidl) current in thin gate oxide mosfets
10/17/2002WO2001099160A3 Reduction of topography between support regions and array regions of memory devices
10/17/2002WO2001071410A3 High acuity lens system
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