H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
10/2002
10/24/2002	US20020153554 Semiconductor device having a capacitor and manufacturing method thereof
10/24/2002	US20020153553 Integrated semiconductor memory configuration
10/24/2002	US20020153552 Semiconductor device and method for manufacturing the smae
10/24/2002	US20020153551 Method for making a metal-insulator-metal capacitor using plate-through mask techniques
10/24/2002	US20020153550 FRAM and method of fabricating the same
10/24/2002	US20020153548 Semiconductor device and method of manufacturing the same
10/24/2002	US20020153547 Semiconductor memory device including magneto resistive element and method of fabricating the same
10/24/2002	US20020153546 Two-transistor flash cell
10/24/2002	US20020153545 Semiconductor memory device
10/24/2002	US20020153544 Semiconductor device and its manufacturing method
10/24/2002	US20020153542 Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric
10/24/2002	US20020153540 Solid state imaging device for achieving enhanced zooming characteristics and method of making the same
10/24/2002	US20020153539 Semiconductor integrated circuit device and method of manufacturing the same
10/24/2002	US20020153534 Semiconductor device and power amplifier using the same
10/24/2002	US20020153533 Semiconductor device
10/24/2002	US20020153529 LED array with optical isolation structure and method of manufacturing the same
10/24/2002	US20020153525 Semiconductor device with process monitor circuit and test method thereof
10/24/2002	US20020153492 Component of a radiation detector, radiation detector and radiation detection apparatus
10/24/2002	US20020153491 X-ray flat panel detector
10/24/2002	US20020153486 Thermal displacement element and radiation detector using the element
10/24/2002	US20020153478 Method of preventing cross talk
10/24/2002	US20020153474 Image sensor
10/24/2002	US20020153471 Photosensitive imaging apparatus sensitive to orange light
10/24/2002	US20020153349 Plasma processing method and apparatus
10/24/2002	US20020153258 Providing integrated circuit device substrate; forming a first patterned photoresist layer over substrate; forming a magnetic material layer or an electrically conductive material layer in pattern; insulating and planarizing photoresist layer
10/24/2002	US20020153243 Method of fabricating transparent contacts for organic devices
10/24/2002	US20020153160 Electronic device and method for fabricating an electronic device
10/24/2002	US20020153037 Electric power generating film and method of fabrication
10/24/2002	DE10217935A1 Semiconducting component has breakdown voltage between pot region, substrate lower than semiconducting element rated voltage, not higher than that of high voltage semiconducting element
10/24/2002	DE10216017A1 Semiconductor component used e.g. as an integrated circuit of a vehicle comprises a polysilicon resistor, and metal conductors each electrically connected to the resistor at each end via contacts
10/24/2002	DE10213464A1 Auf hochohmigen Substraten gebildeten monolithische serielle/parallele LED-Arrays Formed on high-ohmic substrates monolithic serial / parallel LED arrays
10/24/2002	DE10163361A1 Halbleitervorrichtung Semiconductor device
10/24/2002	DE10161947A1 Halbleiterelement Semiconductor element
10/24/2002	DE10155416A1 Halbleiter-Permanentspeicher Semiconductor non-volatile memory
10/24/2002	DE10136740A1 Integrated inductive component has region of second conductivity type inserted into semiconducting body, likewise lightly doped, arranged below region occupied by conducting track
10/24/2002	DE10135573A1 Transistor arrangement as sense amplifier has at least one second double row of paired transistors of first or second type; rows are offset and gaps of at least one row are left
10/24/2002	DE10118197A1 Integrated magnetoresistive semiconducting memory arrangement has third conductor plane occupied by write selection lines and spatially and electrically separate from first two read planes
10/24/2002	DE10118196A1 Operating MRAM semiconducting memory involves subjecting memory cell to transient reversible magnetic change while reading information, comparing changed/original current signals
10/23/2002	EP1251720A2 Organic semiconductor diode and organic electroluminescence element display device
10/23/2002	EP1251581A1 High frequency integrated inductive coil
10/23/2002	EP1251577A2 Fabrication of integrated tunable/switchable passive microwave and millimeter wave modules
10/23/2002	EP1251570A2 Method of fabricating magnetic random access memory based on tunnel magnetroresistance effect
10/23/2002	EP1251568A2 Light-emitting device and display apparatus using the same
10/23/2002	EP1251564A2 Non-volatile semiconductor memory device and manufacturing method thereof
10/23/2002	EP1251563A2 FET structures having symmetric and/or distributed feedforward capacitor connections
10/23/2002	EP1251561A2 Semiconductor switching device
10/23/2002	EP1251559A2 Multiple terminal capacitor structure
10/23/2002	EP1251558A2 Semiconductor device
10/23/2002	EP1251555A2 Method of fabricating HBT devices
10/23/2002	EP1251520A2 Random access memory
10/23/2002	EP1251519A1 Semiconductor memory device using magneto resistive element and method of manufacturing the same
10/23/2002	EP1251503A2 Data storage device
10/23/2002	EP1251392A2 Electrooptic device, method of manufacturing the same, and electronic apparatus
10/23/2002	EP1251364A2 Semiconductor gamma-ray camera and medical imaging system
10/23/2002	EP1250714A1 Nitridation barriers for nitridated tunnel oxide for circuitry for flash memory technology and for locos/sti isolation
10/23/2002	EP1250642A1 Random number generator
10/23/2002	EP1183642B1 Integrated circuit device which is secured against attacks resulting from controlled destruction of an additional layer
10/23/2002	EP1099223B1 Storage assembly comprised of a plurality of resistive ferroelectric storage cells
10/23/2002	CN2518224Y Image wafer configuration structure
10/23/2002	CN1376313A Non-volatile memory structure for twin-bit storage and methods of making same
10/23/2002	CN1376312A Ferroelectric transistor and use thereof in a memory cell arrangement
10/23/2002	CN1376311A 铁电晶体管 The ferroelectric transistor
10/23/2002	CN1376310A Improved heat dissipation in an amplifier circuit by interleaved configuration of two power transistors
10/23/2002	CN1376309A Encapsulated tungsten gate MOS transistor and memory cell and method of making same
10/23/2002	CN1376299A Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type
10/23/2002	CN1376015A Organic electro-illuminating apparatus and electronic machine
10/23/2002	CN1376014A Active array type display apparatus
10/23/2002	CN1375879A Semiconductor device, its making method and liquid spraying apparatus
10/23/2002	CN1375877A Double-bit non-volatile memroy structure and manufacture process
10/23/2002	CN1375876A Semiconductor storage device and its making method
10/23/2002	CN1375875A Semiconductor device and its mfg. method
10/23/2002	CN1375874A Semiconductor storage device
10/23/2002	CN1375873A High speed and high-capacity flash solid memory structure and manufacture process
10/23/2002	CN1375870A Semiconductor device and its making method
10/23/2002	CN1375865A Method for forming capacitor element
10/23/2002	CN1375863A Method for making semiconductor
10/23/2002	CN1375862A Method for making semiconductor with ruthenium or ruthenium deoxide
10/23/2002	CN1375859A Method for making semiconductor device
10/23/2002	CN1375735A Display apparatus and its mfg. method
10/23/2002	CN1093319C Semiconductor device, ferroelectric capacitor, and process for forming the same
10/22/2002	US6470328 Artificial neuron on the base of B-driven threshold element
10/22/2002	US6470304 Method and apparatus for eliminating bitline voltage offsets in memory devices
10/22/2002	US6469950 Static memory cell having independent data holding voltage
10/22/2002	US6469939 Flash memory device with increase of efficiency during an APDE (automatic program disturb after erase) process
10/22/2002	US6469935 Array architecture nonvolatile memory and its operation methods
10/22/2002	US6469928 Nonvolatile semiconductor memory device with concurrent memory access and data locking
10/22/2002	US6469927 Magnetoresistive trimming of GMR circuits
10/22/2002	US6469926 Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
10/22/2002	US6469925 Memory cell with improved retention time
10/22/2002	US6469924 Memory architecture with refresh and sense amplifiers
10/22/2002	US6469887 Capacitor for semiconductor configuration and method for fabricating a dielectric layer therefor
10/22/2002	US6469884 Internal protection circuit and method for on chip programmable poly fuses
10/22/2002	US6469769 Manufacturing method of a liquid crystal display
10/22/2002	US6469609 Method of fabricating silver inductor
10/22/2002	US6469573 Semiconductor integrated circuit
10/22/2002	US6469571 Charge pump with charge equalization for improved efficiency
10/22/2002	US6469568 Metal oxide semiconductor transistor circuit and semiconductor integrated circuit using the same
10/22/2002	US6469560 Electrostatic discharge protective circuit
10/22/2002	US6469450 Display device
10/22/2002	US6469439 Process for producing an organic electroluminescent device

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