Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
11/2002
11/07/2002WO2002089212A1 Organic displays and devices containing oriented electronically active layers
11/07/2002WO2002089211A1 Electroluminescent device and method for manufacturing thereof
11/07/2002WO2002089210A1 Organic electroluminescent device and a method of manufacturing thereof
11/07/2002WO2002089204A1 Semiconductor device
11/07/2002WO2002089202A2 Method for the production of an integrated circuit
11/07/2002WO2002089201A1 Improved salicide block for silicon-on-insulator (soi) applications
11/07/2002WO2002089187A2 An improved method for forming minimally spaced mram structures
11/07/2002WO2002089182A2 Recessed gat dram transistor and method
11/07/2002WO2002089177A2 A contact structure of a wiring line and method manufacturing the same, and thin film transistor array substrate including the contact structure and method manufacturing the same
11/07/2002WO2002088765A1 Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
11/07/2002WO2002088648A1 Infrared detector with amorphous silicon detector elements, and a method of making it
11/07/2002WO2002088647A2 Millimeter-wave terrestrial imager
11/07/2002WO2002088419A1 Method for production of a metallic or metal-containing layer
11/07/2002WO2002087894A1 Method for thermally transferring oriented materials for organic electronic displays and devices
11/07/2002WO2002075818A3 Inductive storage capacitor
11/07/2002WO2002067328A3 Organic light emitting diode display having shield electrodes
11/07/2002WO2002058218A3 Three terminal noninverting transistor switch
11/07/2002WO2002047160A3 Method for producing high-speed vertical npn bipolar transistors and complementary mos transistors on a chip
11/07/2002WO2002031883A3 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode
11/07/2002WO2001099099A3 Magnetic multilayer structure with improved magnetic field range
11/07/2002WO2001071777A3 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
11/07/2002WO2001008159A3 Method of forming memory capacitor contact openings
11/07/2002US20020164888 Etchant for patterning indium tin oxide and method of fabricating liquid crystal display device using the same
11/07/2002US20020164871 Multilayer dielectric; oxygen doping; preferential etching
11/07/2002US20020164862 Electrostatic discharge protection for sensors
11/07/2002US20020164861 Solvent blend; controlling polarity; applying to receiver substrate
11/07/2002US20020164860 Multilayer; overcoating dielectric substrate; intake and drain zones
11/07/2002US20020164858 Semiconductor device and manufacturing method thereof
11/07/2002US20020164857 Method for forming dual gate of a semiconductor device
11/07/2002US20020164856 Method of making an eeprom cell with asymmetric thin window
11/07/2002US20020164853 Vertical gate transistors in pass transistor programmable logic arrays
11/07/2002US20020164850 Multilayer; substrate, ferroelectric dielectric barrier and interfacial oxide
11/07/2002US20020164848 Insertion of diffusion guard ring
11/07/2002US20020164847 Method of forming a CMOS type semiconductor device
11/07/2002US20020164843 Method of manufacturing a semiconductor device
11/07/2002US20020164842 Method for manufacturing a semiconductor device
11/07/2002US20020164839 Bonding semiconductor to substrate, then thermal spreading layer; multilayer vertical bonding
11/07/2002US20020164834 Monolithic bypass-diode and solar-cell string assembly
11/07/2002US20020164828 Sputtering a first ferromagnetic layer, growing a conductive layer on the ferromagnetic layer, oxidizing conductive lyaer to form a tunnel barrier layer of oxide on conductive layer, growing a second ferromagnetic layer on the oxide
11/07/2002US20020164827 Microelectronic piezoelectric structure and method of forming the same
11/07/2002US20020164535 Thermal mass transfer donor element
11/07/2002US20020164416 EL display device and a method of manufacturing the same
11/07/2002US20020164415 Electroluminescent Device
11/07/2002US20020164143 Optical device and method therefor
11/07/2002US20020164142 Optical device and method therefor
11/07/2002US20020164122 Opto-coupling device structure and method therefor
11/07/2002US20020163992 X-ray detector array and method for manufacturing same
11/07/2002US20020163845 Semiconductor device with reduced current consumption in standby state
11/07/2002US20020163844 Reference cells with integration capacitor
11/07/2002US20020163842 Dram cell configuration and method for fabricating the dram cell configuration
11/07/2002US20020163841 Voltage-level shifter and semiconductor memory using the same
11/07/2002US20020163838 Novel multi-state memory
11/07/2002US20020163836 Semiconductor device
11/07/2002US20020163829 Memory switch
11/07/2002US20020163828 Memory device with a self-assembled polymer film and method of making the same
11/07/2002US20020163769 Multiple terminal capacitor structure
11/07/2002US20020163768 Electrostatic discharge protection circuit using diodes
11/07/2002US20020163764 Tunneling magnetoresistive device and method for manufacturing the same
11/07/2002US20020163614 Electrooptic device and electronic apparatus
11/07/2002US20020163611 Electrooptic device, method of manufacturing the same, and electronic apparatus
11/07/2002US20020163589 Solid-state image pickup device and method of producing the same
11/07/2002US20020163475 Tunable slot antenna
11/07/2002US20020163400 Tunable ferro-electric multiplexer
11/07/2002US20020163380 Integrated circuit
11/07/2002US20020163379 CMOS reference voltage circuit
11/07/2002US20020163375 On-chip integrated mixer with balun circuit and method of making the same
11/07/2002US20020163366 Inductive load driving circuit
11/07/2002US20020163354 Integrated circuit and associated design method using spare gate islands
11/07/2002US20020163314 Light emitting device and a method of manufacturing the same
11/07/2002US20020163300 Organic electroluminescent device and a method of manufacturing thereof
11/07/2002US20020163287 Field emitting display
11/07/2002US20020163080 Semiconductor device and its manufacture
11/07/2002US20020163058 Semiconductor high dielectric constant decoupling capacitor structures and process for fabrication
11/07/2002US20020163057 Reversible field-programmable electric interconnects
11/07/2002US20020163054 Semiconductor device and its manufacture method
11/07/2002US20020163052 Compact sensing apparatus having an angled sensor formed in a dual-piece monolithic substrate
11/07/2002US20020163050 Electronic circuit structure with improved dielectric properties
11/07/2002US20020163049 Semiconductor device and fabrication method thereof
11/07/2002US20020163048 Integrated circuit base transistor structure and associated programmable cell library
11/07/2002US20020163047 Semiconductor device
11/07/2002US20020163046 Merged semiconductor device and method
11/07/2002US20020163042 Semiconductor device
11/07/2002US20020163041 Silicon-on-insulator (SOI) substrate, method for fabricating SOI substrate and SOI MOSFET using the SOI substrate
11/07/2002US20020163039 High dielectric constant materials as gate dielectrics (insulators)
11/07/2002US20020163038 Semiconductor device and method for fabricating the same
11/07/2002US20020163037 Semiconductor device having LDD-type source/drain regions and fabrication method thereof
11/07/2002US20020163036 Semiconductor Device
11/07/2002US20020163035 Semiconductor device and manufacturing method thereof
11/07/2002US20020163034 Cell array region of a nor-type mask ROM device and fabricating method therefor
11/07/2002US20020163030 Floating gate memory device using composite molecular material
11/07/2002US20020163028 Methods of forming gap fill and layers formed thereby
11/07/2002US20020163026 Capacitor and method of manufacturing the same
11/07/2002US20020163025 Mixed metal nitride and boride barrier layers
11/07/2002US20020163023 Solid state imaging device, method of manufacturing the same, and solid state imaging system
11/07/2002US20020163022 Semiconductor device and method of manufacturing the same
11/07/2002US20020163021 Low voltage transient voltage suppressor and method of making
11/07/2002US20020163020 Retrograde well structure for a CMOS imager
11/07/2002US20020163018 Radio frequency semiconductor apparatus
11/07/2002US20020163017 Array driving circuit with control voltage adjusted at both ends, and array head using same
11/07/2002US20020163009 Method for forming a lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process
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