Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
06/2003
06/04/2003CN1422439A Method of manufacturing a heterojunction BICOMS integrated circuit
06/04/2003CN1422104A Illuminating device
06/04/2003CN1422071A Solid imaging apparatus and producing method thereof
06/04/2003CN1421932A Semconductor device and producing method thereof
06/04/2003CN1421930A Semiconductor integrated circuit apparatus and producing method thereof
06/04/2003CN1421929A 半导体集成电路 The semiconductor integrated circuit
06/04/2003CN1421927A 半导体器件 Semiconductor devices
06/04/2003CN1421918A Structure and manufacture of shaded ROM
06/04/2003CN1421913A Semiconductor device with groove isolation and production method thereof
06/04/2003CN1421908A Method for producing MOS transistor with shallow-source electrode/drain electrode junction region
06/04/2003CN1421907A Method for producing thin film transistor
06/04/2003CN1421901A Manufacturing apparatus for semiconductor
06/04/2003CN1421900A Substrate for electronic apparatus, Method for producing substrate of electronic apparatus and electronic apparatus
06/04/2003CN1421879A Induction element and induction value regulating method thereof
06/04/2003CN1421869A Strong media memory and operation method thereof
06/04/2003CN1421865A Magnetic random access storage device
06/04/2003CN1421762A Fall-of-electric potential generation circuit capable of running under low-supply voltage
06/04/2003CN1421743A Resist pattern thickening material, resist pattern and its forming method, semiconductor device and producing method thereof
06/04/2003CN1421726A Active matrix display equipment
06/04/2003CN1110859C Bipolar transistor and fabrication method thereof
06/04/2003CN1110858C Dielectric separate type semiconductor device
06/04/2003CN1110857C 半导体集成电路器件 The semiconductor integrated circuit device
06/04/2003CN1110854C 半导体装置 Semiconductor device
06/04/2003CN1110852C Method for manufacturing semiconductor device
06/04/2003CN1110850C Method for making double-crown electric capacitor
06/04/2003CN1110819C High read speed multivalued read only memory device
06/04/2003CN1110818C Semiconductor integrated circuit device with internal power circuit
06/03/2003USH2066 Puddles; two-dimensional arrays; Josephson junctions
06/03/2003US6574785 Wiring method for semiconductor integrated circuit and computer product using maximum gap between times
06/03/2003US6574761 On-line testing of the programmable interconnect network in field programmable gate arrays
06/03/2003US6574757 Integrated circuit semiconductor device having built-in self-repair circuit for embedded memory and method for repairing the memory
06/03/2003US6574250 Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths
06/03/2003US6574161 Semiconductor integrated circuit device having a hierarchical power source configuration
06/03/2003US6574149 Semiconductor memory and its usage
06/03/2003US6574143 Memory device using hot charge carrier converters
06/03/2003US6574140 Low voltage single supply CMOS electrically erasable read-only memory
06/03/2003US6574139 Method and device for reading dual bit memory cells using multiple reference cells with two side read
06/03/2003US6574138 Memory cell configuration and method for operating the configuration
06/03/2003US6574136 Reduced leakage memory cell
06/03/2003US6574131 Depletion mode ferroelectric memory device and method of writing to and reading from the same
06/03/2003US6574129 Resistive cross point memory cell arrays having a cross-couple latch sense amplifier
06/03/2003US6574091 Multi-plate capacitor structure
06/03/2003US6574087 Electrode layers (1, 2) are arranged on both sides of a dielectric layer (3) facing each other so as to configure a capacitor. Lead electrodes (4, 5) are formed in the electrode layers (1, 2). A penetrating electrode (6) that is insulated
06/03/2003US6574054 Structural unit and method of fixing a lens and a solid state imaging element
06/03/2003US6573937 Solid image pick-up device having unnecessary charge discharging section
06/03/2003US6573751 Semiconductor device and electronic apparatus using the same
06/03/2003US6573750 Charge transfer device, and driving method and manufacturing method for the same
06/03/2003US6573742 Semiconductor integrated circuit with test points inserted thereinto
06/03/2003US6573713 Transpinnor-based switch and applications
06/03/2003US6573661 Image display for displaying a reflection image and a luminous image
06/03/2003US6573650 Electroluminescent device and process for producing the same
06/03/2003US6573613 Semiconductor memory device having cell plate electrodes allowing independent power supply for each redundant replacement unit
06/03/2003US6573605 Semiconductor integrated circuit device, design method for semiconductor integrated circuit device, design aiding device for semiconductor integrated circuit device, program, and program recording medium
06/03/2003US6573604 Semiconductor device carrying memory and logic circuit on a chip and method of manufacturing the same
06/03/2003US6573597 Cross-over for quasi-coaxial transmission lines fabricated on a substrate
06/03/2003US6573591 Spherical semiconductor device and method of mounting the same on a substrate
06/03/2003US6573589 Semiconductor device and process for fabricating the same
06/03/2003US6573588 Capacitance element
06/03/2003US6573586 Semiconductor device
06/03/2003US6573582 Semiconductor device
06/03/2003US6573579 Employing multiple organic electroluminescence (OEL) image panels, in which each image panel is made with multiple light-emitting OEL components. Each light-emitting OEL component represents one image element. The OEL component is
06/03/2003US6573578 Photo semiconductor integrated circuit device and optical recording reproducing apparatus
06/03/2003US6573577 Semiconductor device and method for fabricating the same
06/03/2003US6573576 Semiconductor device and method for fabricating the same
06/03/2003US6573575 DRAM MOS field effect transistors with thresholds determined by differential gate doping
06/03/2003US6573574 Cell array region of a NOR-type mask ROM device and fabricating method therefor
06/03/2003US6573573 Mask ROM and method for fabricating the same
06/03/2003US6573570 Semiconductor device having contact electrode to semiconductor substrate
06/03/2003US6573568 ESD protection devices and methods for reducing trigger voltage
06/03/2003US6573566 Low-voltage-triggered SOI-SCR device and associated ESD protection circuit
06/03/2003US6573565 Method and structure for providing improved thermal conduction for silicon semiconductor devices
06/03/2003US6573564 Device having high mass production performance and high reliability and reproducibility by simple fabrication steps, in a constitution of a semiconductor device of a bottom gate type formed by a semiconductor layer having a crystal
06/03/2003US6573563 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs
06/03/2003US6573562 First conductivity type, a transistor (120) at least partially located in the semiconductor substrate, and a switching circuit transistor includes (i) a first doped region in the first portion of the semiconductor substrate and having the
06/03/2003US6573557 EEPROM cell having reduced cell area
06/03/2003US6573556 Parasitic surface transfer transistor cell (PASTT cell) for bi-level and multi-level NAND flash memory
06/03/2003US6573553 Semiconductor device and method for fabricating the same
06/03/2003US6573552 Method to form hemispherical grained polysilicon
06/03/2003US6573551 Self-aligned contact, including the steps of forming a plurality of gate electrodes by interposing a gate insulating layer on an active region of a semiconductor substrate in a predetermined direction at constant intervals, forming a
06/03/2003US6573549 Dynamic threshold voltage 6T SRAM cell
06/03/2003US6573548 DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same
06/03/2003US6573546 Semiconductor integrated circuit device and process for manufacturing the same
06/03/2003US6573545 Semiconductor memory device for eliminating floating body effect and method of fabricating the same
06/03/2003US6573544 Data input/output line structure having reduced resistance
06/03/2003US6573542 Capacitor electrodes arrangement with oxygen iridium between silicon and oxygen barrier layer
06/03/2003US6573541 Charge coupled device with channel well
06/03/2003US6573540 Semiconductor device and method for fabricating the same
06/03/2003US6573537 Highly reflective ohmic contacts to III-nitride flip-chip LEDs
06/03/2003US6573533 Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment
06/03/2003US6573532 Thin film transistor array panel for liquid crystal display
06/03/2003US6573529 Two Field Effect Transistors with different device characteristics, a common input terminal, and output terminals A signal transmitting FET has a gate width of 500 mu m and a signal receiving FET has a gate width of 400 mu m. A resistor
06/03/2003US6573504 Infrared sensor and manufacturing method thereof
06/03/2003US6573487 Image sensor used for image inputting device
06/03/2003US6573211 Perovskite mixed oxide
06/03/2003US6573195 Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere
06/03/2003US6573171 Semiconductor device and manufacturing process thereof
06/03/2003US6573170 Process for multilayer wiring connections and bonding pad adhesion to dielectric in a semiconductor integrated circuit device
06/03/2003US6573168 A wet or dry etching, in which high etching selectivity between dummy dielectric pattern and interdielectric layer pattern is used
06/03/2003US6573167 Using a carbon film as an etch hardmask for hard-to-etch materials
06/03/2003US6573162 Laser irradiation apparatus and method of fabricating a semiconductor device
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