| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 04/01/2004 | US20040061179 Suppresses boron diffusion in doped semiconductors; dielectric stacks prevent shorting |
| 04/01/2004 | US20040061177 Capacitor structure and fabrication method therefor in a dual damascene process |
| 04/01/2004 | US20040061176 Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
| 04/01/2004 | US20040061172 Damascene gate multi-mesa MOSFET |
| 04/01/2004 | US20040061169 Non-volatile memory device and method of manufacturing the same |
| 04/01/2004 | US20040061168 Electrically erasable and programmable non-volatile memory cell |
| 04/01/2004 | US20040061167 Method of improving erase efficiency and a non-volatile memory cell made thereby |
| 04/01/2004 | US20040061166 Magnetoresistive memory device and method for fabricating the same |
| 04/01/2004 | US20040061165 Floating gate memory fabrication methods comprising a field dielectric etch with a horizontal etch component |
| 04/01/2004 | US20040061164 Integrated DRAM process/structure using contact pillars |
| 04/01/2004 | US20040061163 Semiconductor equipment |
| 04/01/2004 | US20040061162 Titanium nitride; bit line stack and a storage node contact hole which are aligned at bit line spacers |
| 04/01/2004 | US20040061161 Memory cell with vertical transistor and trench capacitor with reduced burried strap |
| 04/01/2004 | US20040061160 Semiconductor device including storage capacitor |
| 04/01/2004 | US20040061159 Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method |
| 04/01/2004 | US20040061158 Semiconductor device having different thickness gate oxides |
| 04/01/2004 | US20040061157 Semiconductor device |
| 04/01/2004 | US20040061156 Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell |
| 04/01/2004 | US20040061155 Ferroelectric memory with read-only memory cells, and fabrication method thereof |
| 04/01/2004 | US20040061154 Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
| 04/01/2004 | US20040061153 Non-volatile memory using ferroelectric gate field-effect transistors |
| 04/01/2004 | US20040061152 Semiconductor photosensor device |
| 04/01/2004 | US20040061151 Nanometer-scale semiconductor devices and method of making |
| 04/01/2004 | US20040061150 CMOS of semiconductor device and method for manufacturing the same |
| 04/01/2004 | US20040061148 One-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region |
| 04/01/2004 | US20040061145 Method for forming a bit line for a semiconductor device |
| 04/01/2004 | US20040061144 Semiconductor memory device |
| 04/01/2004 | US20040061143 Optimized memory cell physical arrangement |
| 04/01/2004 | US20040061140 Semiconductor integrated circuit having reduced cross-talk noise |
| 04/01/2004 | US20040061132 Microcircuits having metal oxide semiconductor (MOS) transistor; bismuth doped |
| 04/01/2004 | US20040061131 Compact non-linear HBT array |
| 04/01/2004 | US20040061126 Electronic circuit device |
| 04/01/2004 | US20040061121 Light-emitting device, method of manufacturing the same, and electronic apparatus |
| 04/01/2004 | US20040061118 Light emitting device and manufacturing method thereof |
| 04/01/2004 | US20040061115 Light emititng device |
| 04/01/2004 | US20040061113 CMOS image sensor |
| 04/01/2004 | US20040061110 Test structure for determining a doping region of an electrode connection between a trench capacitor and a selection transistor in a memory cell array |
| 04/01/2004 | US20040061107 Color tunable organic electroluminescent light source |
| 04/01/2004 | US20040061056 Indium gallium arsenide intermetallic formed over indium phosphide substrated is thinned or etched; second silicon substrate with electrically coupled readout integrated circuit |
| 04/01/2004 | US20040060731 Patterned electrically conductive polymers |
| 04/01/2004 | US20040060592 Semiconductor device and its manufacturing method |
| 04/01/2004 | DE69530812T2 Integrierte Halbleiterschaltung A semiconductor integrated circuit |
| 04/01/2004 | DE19837401B4 Komplementärtransistorstruktur und Verfahren zum Herstellen einer Komplementärtransistorstruktur Complementary transistor structure and method of manufacturing a complementary transistor structure |
| 04/01/2004 | DE10341068A1 NPN-Darlington-ESD-Schutzschaltung NPN Darlington ESD protection circuit |
| 04/01/2004 | DE10243604A1 Arrangement of resistors in common well of semiconductor device, has e.g. identical resistors arranged alternately staggered in longitudinal direction of resistors |
| 04/01/2004 | DE10243380A1 Verfahren zur Herstellung einer integrierten Halbleiterschaltung A process for producing a semiconductor integrated circuit |
| 04/01/2004 | DE10234952B3 Production of a semiconductor structure used as a trench capacitor comprises preparing a semiconductor substrate, and forming a trench in the substrate |
| 03/31/2004 | EP1404119A1 Camera module and electronic image pick-up method |
| 03/31/2004 | EP1403939A1 Light-emitting device, display and lighting unit |
| 03/31/2004 | EP1403935A2 Light emitting devices including tunnel junctions |
| 03/31/2004 | EP1403928A2 Nanometer-scale semiconductor devices and method of making |
| 03/31/2004 | EP1403927A1 High voltage transistor integrated with non-volatile memory cells |
| 03/31/2004 | EP1403924A2 Fuse arrangement and semiconductor memory device |
| 03/31/2004 | EP1403920A2 Method of fabricating self-aligned cross-point memory array |
| 03/31/2004 | EP1403919A2 Magnetic memory device and method of manufacturing the same |
| 03/31/2004 | EP1403916A2 Production process for producing semiconductor devices, semiconductor devices produced thereby, and test system for carrying out yield-rate test in production of such semiconductor devices |
| 03/31/2004 | EP1403914A2 Method of making a semiconductor device having trenches |
| 03/31/2004 | EP1403909A1 Process for manufactoring integrated resistive elements with silicidation protection |
| 03/31/2004 | EP1403908A2 Oled lamp |
| 03/31/2004 | EP1403878A2 Flash eprom intergrated circuit architecture |
| 03/31/2004 | EP1403876A1 Ferroelectric memory with wide operating voltage and multi-bit storage per cell |
| 03/31/2004 | EP1403875A2 Magnetoresistive element and magnetic memory allowing high density |
| 03/31/2004 | EP1403874A1 Memory device |
| 03/31/2004 | EP1403717A1 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device |
| 03/31/2004 | EP1403691A1 Electro-optical display device and its manufacturing method including the transfer of a chip |
| 03/31/2004 | EP1402721A1 Photosensor system and drive control method thereof |
| 03/31/2004 | EP1402636A2 Integrated circuit and method for testing the integrated circuit |
| 03/31/2004 | EP1402581A1 Infrared sensor and method for making same |
| 03/31/2004 | EP1402580A1 Symmetric trench mosfet device and method of making same |
| 03/31/2004 | EP1402578A2 Cmos image sensor and method for operating a cmos image sensor with increased dynamic range |
| 03/31/2004 | EP1402577A2 Integration of two memory types |
| 03/31/2004 | EP1402576A2 Structure and method of fabricating embedded vertical dram arrays with silicided bitline and polysilicon interconnect |
| 03/31/2004 | EP1402574A2 Electrostatic discharge (esd) protection device with simultaneous and distributed self-biasing for multi-finger turn-on |
| 03/31/2004 | EP1402573A1 Method and structure for buried circuits and devices |
| 03/31/2004 | EP1402567A2 Film or layer made of semi-conductive material and method for producing said film or layer |
| 03/31/2004 | EP1402564A2 Integrated optical/electronic circuits and associated methods of simultaneous generation thereof |
| 03/31/2004 | EP1402505A2 Method of driving an organic electroluminescent display device and display device suitable for said method |
| 03/31/2004 | EP1402426A2 Method for generating design constraints for modulates in a hierarchical integrated circuit design system |
| 03/31/2004 | EP1402298A2 Electronic semiconductor control of light in optical waveguide |
| 03/31/2004 | EP1402294A1 Polyloaded optical waveguide devices |
| 03/31/2004 | EP1402289A1 Anisotropic etching of optical components |
| 03/31/2004 | EP1101244A4 Modification of polymer optoelectronic properties after film formation impurity addition or removal |
| 03/31/2004 | EP1010245A4 System for compensating for temperature induced delay variation in an integrated circuit |
| 03/31/2004 | EP0846343B1 Electrically erasable memory elements characterized by reduced current and improved thermal stability |
| 03/31/2004 | CN2609189Y Surface mounted thick-film circuit |
| 03/31/2004 | CN1486532A Electronic switching device and an operating method therefor |
| 03/31/2004 | CN1486526A Energy pathway arrangement |
| 03/31/2004 | CN1486512A Semiconductor device and method for fabricating the same |
| 03/31/2004 | CN1486511A Apparatus and method for forming a battery in an integrated circuit |
| 03/31/2004 | CN1486479A Electronic device and method of manufacturing the same, and electronic instrument |
| 03/31/2004 | CN1486431A Input/output continuity test mode circuit |
| 03/31/2004 | CN1486281A Method for preparing a stable lead zircon-titanate sol and method for preparing films based on same |
| 03/31/2004 | CN1486079A Video camera module |
| 03/31/2004 | CN1485926A Sram formed on soi substrate |
| 03/31/2004 | CN1485925A Read-only memory element of three-dimensional storage |
| 03/31/2004 | CN1485924A Integrated metal-insulator-metal capacitor and metal gate transistor |
| 03/31/2004 | CN1485923A Dynamic RAM module possessing switchover circuit |
| 03/31/2004 | CN1485922A Dynamic RAM |
| 03/31/2004 | CN1485921A Shielding layer structure of semiconductor component and forming method thereof |
| 03/31/2004 | CN1485920A Single electron memory using vertical stratification carbon nanometer transistor at double ends and its manufacturing method |