H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
03/2004
03/11/2004	WO2003103050A3 Variable capacitances for memory cells within a cell group
03/11/2004	WO2003098402A3 Method and apparatus for determining optical flow
03/11/2004	WO2003096412A3 Method for the production of an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor
03/11/2004	WO2003094170A3 Layout for thermally selected cross-point mram cell
03/11/2004	WO2003079432A3 Automatically adjusting serial connections of thick and thin layers and method for the production thereof
03/11/2004	WO2003058717A3 Package for a non-volatile memory device including integrated passive devices and method for making the same
03/11/2004	WO2003041160A3 Two-step ion implantation method with active wafer cooling for buried oxide formation
03/11/2004	WO2003012880A3 Solar cell having a bypass diode for reverse bias protection and method of fabrication
03/11/2004	US20040049759 Programmable logic array embedded in mask-programmed ASIC
03/11/2004	US20040049755 Semiconductor integrated circuit, method of manufacturing semiconductor integrated circuit, charge pump circuit, layout designing apparatus, and layout designing program
03/11/2004	US20040049723 Semiconductor integrated circuit with a test circuit
03/11/2004	US20040048545 Structure and method of manufacturing organic electroluminescent element
03/11/2004	US20040048543 Organic light emitting device and method of manufacturing the same
03/11/2004	US20040048533 Nonwoven fabric, hygroscopic member, method and apparatus for producing nonwoven fabric and organic electroluminescence display
03/11/2004	US20040048488 Methods of forming vertical power devices having deep and shallow trenches therein
03/11/2004	US20040048482 Method of forming flash memories with high coupling ratio and the structure of the same
03/11/2004	US20040048481 Method for fabricating non-volatile memory device having sidewall gate structure and SONOS cell structure
03/11/2004	US20040048455 Method of making layered superlattice material with improved microstructure
03/11/2004	US20040048454 Substrate and manufacturing method therefor
03/11/2004	US20040048451 Rhodium film and method of formation
03/11/2004	US20040048447 Method for making semiconductor device, semiconductor element composite, electro-optical apparatus, and electronic system
03/11/2004	US20040048446 Methods of forming semiconductor constructions
03/11/2004	US20040048436 Method for manufacturing a buried strap contact in a memory cell
03/11/2004	US20040048435 Method of forming MOS transistor
03/11/2004	US20040048434 Semiconductor device manufacturing method
03/11/2004	US20040048433 Method of manufacturing a memory integrated circuit device
03/11/2004	US20040048432 Non-volatile memory device and fabrication method
03/11/2004	US20040048431 Suppression of cross diffusion and gate depletion
03/11/2004	US20040048428 Semiconductor device and method of manufacturing the same
03/11/2004	US20040048427 Method of forming MOS transistor
03/11/2004	US20040048425 Grounded body SOI SRAM cell
03/11/2004	US20040048424 Method of forming an N channel and P channel FINFET device on the same semiconductor substrate
03/11/2004	US20040048422 Thin film transistor device and method of manufacturing the same, thin film transistor substrate and display having the same
03/11/2004	US20040048408 Semiconductor device and manufacturing method thereof
03/11/2004	US20040048407 Method of fabricating liquid crystal display
03/11/2004	US20040048091 Forming a first substrate having a semiconductor region and an insulating region on a surface coating the first substrate with a single-crystal semiconductor layer
03/11/2004	US20040048037 Method of fabricating electronic devices
03/11/2004	US20040048033 Oled devices with improved encapsulation
03/11/2004	US20040047229 Semiconductor memory device having a hierarchical I/O structure
03/11/2004	US20040047219 Ferroelectric nonvolatile semiconductor memory
03/11/2004	US20040047218 Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
03/11/2004	US20040047217 Non-volatile semiconductor memory device and method of manufacturing the same
03/11/2004	US20040047216 Non-volatile memory device capable of generating accurate reference current for determination
03/11/2004	US20040047213 Shared global word line magnetic random access memory
03/11/2004	US20040047206 Semiconductor memory device
03/11/2004	US20040047203 Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
03/11/2004	US20040047202 Nonvolatile semiconductor memory
03/11/2004	US20040047201 Semiconductor memory device having self-aligned wiring conductor
03/11/2004	US20040047199 Semiconductor memory device using magneto resistive element and method of manufacturing the same
03/11/2004	US20040047196 Thin film magnetic memory device having a highly integrated memory array
03/11/2004	US20040047195 Novel multi-state memory
03/11/2004	US20040047190 Magnetoresistance storage element
03/11/2004	US20040047188 Memory with a bit line block and/or a word line block for preventing reverse engineering
03/11/2004	US20040047187 Non-volatile semiconductor memory device suppressing write-back fault
03/11/2004	US20040047185 Semiconductor device
03/11/2004	US20040047183 Nonvolatile semiconductor memory adapted to store a multi-valued data in a single memory cell
03/11/2004	US20040047180 Memory cell isolation
03/11/2004	US20040047179 Thin film magnetic memory device executing self-reference type data read
03/11/2004	US20040047177 Magnetic random access memory
03/11/2004	US20040047175 System and method for pulling electrically isolated memory cells in a memory array to a non-floating state
03/11/2004	US20040047168 Semiconductor integrated circuit
03/11/2004	US20040047109 Method for forming a photoresist pattern, method for forming a capacitor using the same and capacitor
03/11/2004	US20040047098 Electronic switching device and an operating method thereof
03/11/2004	US20040047094 System and method for electrostatic discharge protection using lateral PNP or PMOS or both for substrate biasing
03/11/2004	US20040047050 Devices incorporating electrochromic elements and optical sensors
03/11/2004	US20040047006 Image reading apparatus
03/11/2004	US20040046884 Electric camera
03/11/2004	US20040046883 Solid-state image pick-up device
03/11/2004	US20040046882 Electric camera
03/11/2004	US20040046881 Imaging device
03/11/2004	US20040046715 Circuit for driving matrix display panel with photoluminescence quenching devices, and matrix display apparatus incorporating the circuit
03/11/2004	US20040046630 Integrated transformer
03/11/2004	US20040046602 Voltage generator
03/11/2004	US20040046600 Equivalent circuit of voltage-controlled variable capacitive element
03/11/2004	US20040046586 Semiconductor integrated circuit
03/11/2004	US20040046575 Semiconductor device protecting built-in transistor from the voltage applied at test mode
03/11/2004	US20040046498 Electroluminescent device and process for producing the same
03/11/2004	US20040046234 High-frequency oscillator for an integrated semiconductor circuit and the use thereof
03/11/2004	US20040046231 Semiconductor device having a fuse
03/11/2004	US20040046230 A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns on the surface of the first low
03/11/2004	US20040046227 Semiconductor device
03/11/2004	US20040046226 Semiconductor device and method for manufacturing the same
03/11/2004	US20040046225 Semiconductor power component
03/11/2004	US20040046217 Reliable semiconductor device with high yields. The semiconductor device includes a silicon substrate, a gate insulating film formed on one main plane of a silicon substrate and mainly including zirconium oxide of hafnium
03/11/2004	US20040046216 Semiconductor device and method of manufacturing the same
03/11/2004	US20040046215 Semiconductor device and manufacturing method thereof
03/11/2004	US20040046214 Static semiconductor memory device
03/11/2004	US20040046212 Semiconductor memory capable of being driven at low voltage and its manufacture method
03/11/2004	US20040046211 Semiconductor device, method for manufacturing the same, and liquid jet apparatus
03/11/2004	US20040046210 Non-volatile memory device having select transistor structure and sonos cell structure and method for fabricating the device
03/11/2004	US20040046209 When n-channel thin film transistors(TFTs) and p-channel TFTs are formed on a polycrystalline silicon film formed on a glass substrate, a process is included in which P-dopant or N-dopant is introduced at the same time to the channel region
03/11/2004	US20040046208 Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
03/11/2004	US20040046206 Gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways and methods of forming same
03/11/2004	US20040046205 EEPROM device and method for fabricating same
03/11/2004	US20040046204 Non-volatile memory device and method of forming the same
03/11/2004	US20040046203 Semiconductor capacitor device having reduced voltage dependence
03/11/2004	US20040046200 Vertical dram cell structure and its contactless dram arrays
03/11/2004	US20040046199 Self-aligned lateral-transistor dram cell structure
03/11/2004	US20040046198 Stacked memory cell having diffusion barriers
03/11/2004	US20040046196 Ferroelectric capacitors having oxidation barrier conductive layers and lower electrodes disposed in trenches defined by supporting insulating layers and methods of fabricating the same

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