Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
03/2004
03/18/2004US20040054407 Artificial vision system
03/18/2004US20040054255 Endoscopic instrument for use in cavities
03/18/2004US20040053631 Electronic systems
03/18/2004US20040053502 Semiconductor device and manufacturing method thereof
03/18/2004US20040053495 Method of forming barrier layers
03/18/2004US20040053482 Manufacturing method of semiconductor device
03/18/2004US20040053475 Method for forming a sublithographic opening in a semiconductor process
03/18/2004US20040053474 Capacitor and method for fabricating the same
03/18/2004US20040053467 Single-poly eprom and method for forming the same
03/18/2004US20040053466 Semiconductor device and method for manufacturing the same
03/18/2004US20040053465 Semiconductor device having diffusion barrier layer containing chrome and method for fabricating the same
03/18/2004US20040053463 Method of manufacturing semiconductor device
03/18/2004US20040053462 Method for fabricating capacitor of semiconductor device
03/18/2004US20040053461 Graded GexSe100-x concentration in PCRAM
03/18/2004US20040053460 Substrate for electronic devices, manufacturing method therefor, and electronic device
03/18/2004US20040053451 Semiconductor device and manufacturing method thereof
03/18/2004US20040053449 Method for producing plastic active panel displays
03/18/2004US20040053437 MOS image pick-up device and camera incorporating the same
03/18/2004US20040053436 Buried channel CMOS imager and method of forming same
03/18/2004US20040053431 Method of forming a flexible thin film transistor display device with a metal foil substrate
03/18/2004US20040053427 Method of fabricating a ferromagnetic memory device
03/18/2004US20040052150 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication
03/18/2004US20040052142 Semiconductor memory device and method of controlling the same
03/18/2004US20040052139 Memory cell and method for forming the same
03/18/2004US20040052131 Information storage device and manufacturing method thereof
03/18/2004US20040052108 Thin film magnetic memory device suppressing resistance of transistors present in current path
03/18/2004US20040052106 Semiconductor memory device with latch circuit and two magneto-resistance elements
03/18/2004US20040052102 Semiconductor memory device capable of holding write data for long time
03/18/2004US20040052022 Integrated overvoltage and reverse voltage protection circuit
03/18/2004US20040052021 Semiconductor integrated circuit device with enhanced resistance to electrostatic breakdown
03/18/2004US20040052020 Devices without current crowding effect at the finger's ends
03/18/2004US20040052019 ESD protection apparatus and method for a high-voltage input pad
03/18/2004US20040052006 Magnetoresistance element and magnetoresistance storage element and magnetic memory
03/18/2004US20040051823 Liquid crystal display device and method of fabricating the same
03/18/2004US20040051806 Integrated-circuit technology photosensitive sensor
03/18/2004US20040051801 Solid-state image pickup device and device driving control method for solid-state image pickup
03/18/2004US20040051796 Fixed pattern noise removal in CMOS imagers across various operational conditions
03/18/2004US20040051792 Solid-state image sensor and a method of adjusting output of photosensitive cells adaptively to the sensitivity
03/18/2004US20040051707 Semiconductor thin film and semiconductor device
03/18/2004US20040051556 Semiconductor integrated circuit having high-speed and low-power logic gates with common transistor substrate potentials, design methods thereof, and related program recording medium
03/18/2004US20040051548 Semiconductor integrated circuit having a semiconductor storage circuit and a test circuit for testing the semiconductor storage circuit
03/18/2004US20040051452 Display apparatus and method of manufacturing the same
03/18/2004US20040051451 Display unit
03/18/2004US20040051448 Electroluminescence display device and pattern layout method for the same
03/18/2004US20040051447 Organic electroluminescent display and apparatus including organic electroluminescent display
03/18/2004US20040051446 Method and apparatus for structuring electrodes for organic light-emitting display and organic light-emitting display manufactured using the method and apparatus
03/18/2004US20040051445 Display device
03/18/2004US20040051444 Articles having raised features and methods for making the same
03/18/2004US20040051395 Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage
03/18/2004US20040051180 Interconnect, interconnect forming method, thin film transistor, and display device
03/18/2004US20040051164 Two-transistor pixel with buried reset channel and method of formation
03/18/2004US20040051162 Structure and method of providing reduced programming voltage antifuse
03/18/2004US20040051161 Non-volatile memory and the fabrication method thereof
03/18/2004US20040051160 Semiconductor device
03/18/2004US20040051158 Semiconductor device
03/18/2004US20040051156 Method of fabricating a high Q - large tuning range micro-electro mechanical system (MEMS) varactor for broadband applications
03/18/2004US20040051153 Tungsten nitride barrier film on electrode
03/18/2004US20040051152 Semiconductor device and method for manufacturing same
03/18/2004US20040051147 Method for making high-gain vertical bipolar junction transistor structures compatible with CMOS process
03/18/2004US20040051146 ESD protection circuit with high substrate-triggering efficiency
03/18/2004US20040051145 Semiconductor device with protective functions
03/18/2004US20040051144 Connecting intakes, drains zones; integrated circuits
03/18/2004US20040051143 SRAM formed on SOI substrate
03/18/2004US20040051140 Semiconductor-on-insulator thin film transistor constructions, and methods of making semiconductor-on-insulator thin film transistor constructions
03/18/2004US20040051139 MOS transistor apparatus and method of manufacturing same
03/18/2004US20040051137 Semiconductor integrated circuit device and method of manufacturing the same
03/18/2004US20040051133 Nonvolatile semiconductor memory device and process for producing the same
03/18/2004US20040051131 Semiconductor device including capacitor
03/18/2004US20040051130 Semiconductor device
03/18/2004US20040051128 Method to enhance performance of thermal resistor device
03/18/2004US20040051127 Semiconductor device
03/18/2004US20040051125 Semiconductor device and method of manufacturing it
03/18/2004US20040051124 Solid state image sensor having planarized structure under light shielding metal layer
03/18/2004US20040051123 Multi-layered gate for a CMOS imager
03/18/2004US20040051122 Semiconductor integrated circuit device
03/18/2004US20040051120 Semiconductor device and method of manufacturing the same
03/18/2004US20040051115 Structure for protection against radio disturbances
03/18/2004US20040051114 Apparatus, methods and articles of manufacture for a low control voltage switch
03/18/2004US20040051102 Electronic circuit
03/18/2004US20040051101 Thin film transistor device, method of manufacturing the same, and thin film transistor substrate and display having the same
03/18/2004US20040051100 Storage capacitor; liquid crystal display; forming pixel zones
03/18/2004US20040051094 Non-volatile semiconductor memory device allowing shrinking of memory cell
03/18/2004US20040051047 Radiation image sensor and method of producing the same
03/18/2004US20040051046 Highly sensitive imaging camera for space applications including detection of ultrahigh energy cosmic rays
03/18/2004US20040050476 Fibers and ribbons containing phosphor, conductive metals or dielectric particles for use in the manufacture of flat panel displays
03/18/2004DE10341062A1 Gate structure of non-volatile integrated circuit memory device, comprises thermal oxidation layer defining sidewall of gate structure, oxygen diffusion barrier layer on the sidewall, and floating gate with curved sidewall portion
03/18/2004DE10338986A1 Static random access memory component has load transistor in active region lying at an angle to drive transistor active region
03/18/2004DE10337561A1 DRAM mit verbessertem Leckstromverhalten und entsprechendes Herstellungsverfahren DRAM with improved leakage current characteristics and method of manufacture
03/18/2004DE10336481A1 Abstandshalter für Gateelektrodenkontakte in einem Vertikal-DRAM-Bauelement Spacers for the gate electrode contacts in a vertical DRAM device
03/18/2004DE10334946A1 Verfahren zum Ausbilden einer selbstjustierenden Buried-Strap-Verbindung A method for forming a self-aligned buried strap connection
03/18/2004DE10334832A1 Steuerkreis zum Ansteuern eines Leistungshalbleiterbauelements Control circuit for driving a power semiconductor device
03/18/2004DE10334427A1 Verfahren zum Bilden eines Gate-Kontakts in einer Halbleitervorrichtung A method for forming a gate contact in a semiconductor device
03/18/2004DE10328327A1 Bildgebungsarray und Verfahren zur Herstellung desselben Imaging array and method of manufacturing the same
03/18/2004DE10241945A1 Production of a planar transistor used as a MOSFET comprises forming a semiconductor-on-isolator substrate, forming a gate insulating layer and a gate region on the substrate, forming a second insulating layer, and further processing
03/18/2004DE10241379A1 Silicon on insulator high voltage transistor for Flash EPROM circuit has extension with doping profile which increases to a maximum from the surface of the semiconductor layer
03/18/2004DE10241354A1 Integrated circuit with overvoltage protection for microelectronic communication systems, has thyristors at input connections and thyristor current detection system
03/18/2004DE10241171A1 Wort- und Bitleitungsanordnung für einen FINFET-Halbleiterspeicher Word and bit line for a FinFET semiconductor memory
03/18/2004DE10241170A1 Hochdichter NROM-FINFET The high-density NROM FinFET
03/18/2004DE10241156A1 Method for forming integrated pin photodiode forms doped region of one conductivity near to carrier substrate and doped region of second conductivity, further away from carrier substrate, between which is located undoped, or slightly doped
03/18/2004DE10240893A1 Production of memory cell, especially NROM memory cells, comprises implanting nitrogen into the walls of a trench before forming electrically insulating layers or producing covered spacers on the walls of the trench