Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
04/2004
04/08/2004US20040065916 Non-volatile semiconductor memory devices and methods for manufacturing the same
04/08/2004US20040065914 Semiconductor device and method of fabricating the same
04/08/2004US20040065913 Memory device
04/08/2004US20040065912 Electrically programmable nonvolatile variable capacitor
04/08/2004US20040065911 Method and system for manufacturing a pixel image sensor
04/08/2004US20040065910 Image sensor having pixel isolation region
04/08/2004US20040065908 Image sensor
04/08/2004US20040065907 Narrow wire; reducing contactor defects ; using automatic layout tools
04/08/2004US20040065906 Semiconductor integrated circuit device
04/08/2004US20040065903 Integrated circuit with MOSFETS having bi-layer metal gate electordes and method of making same
04/08/2004US20040065902 Electro-optical device and electronic device
04/08/2004US20040065901 Semiconductor device
04/08/2004US20040065900 Semiconductor device and manufacturing the same
04/08/2004US20040065899 Semiconductor device
04/08/2004US20040065895 Silicon controlled rectifier structure with guard ring controlled circuit
04/08/2004US20040065893 Semiconductor light-emitting device, method for fabricating the same, and method for driving the same
04/08/2004US20040065885 Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method
04/08/2004US20040065884 High performance three-dimensional TFT-based CMOS inverters, and computer systems utilizing such novel CMOS inverters
04/08/2004US20040065883 Semiconductor device and manufacturing method thereof
04/08/2004US20040065882 Semiconductor device and process for production thereof
04/08/2004US20040065877 Organic el device
04/08/2004US20040065840 Radiation image pick-up device
04/08/2004US20040065818 High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus
04/08/2004US20040065808 Image sensing device using MOS type image sensing elements
04/08/2004US20040065807 Photoelectric conversion device
04/08/2004US20040065804 Solid state image pickup device
04/08/2004US20040065803 Solid-state image-sensing device
04/08/2004DE19958204B4 Latch-up Schutzschaltungen für integrierte Schaltungen Latch-up protection circuits for integrated circuits
04/08/2004DE19641857B4 Schaltung zur Erzeugung bestimmter Betriebskennwerte einer Halbleitereinrichtung Circuit for production of certain operating characteristics of a semiconductor device
04/08/2004DE10338021A1 Vertikaler NROM und Verfahren zu dessen Herstellung Vertical NROM and process for its preparation
04/08/2004DE10334415A1 Diode used as a pn-barrier layer diode comprises a semiconductor substrate, strip diffusion regions, first electrodes connected to the diffusion regions, and a second electrode
04/08/2004DE10303767A1 Display Display
04/08/2004DE10302670B3 DRAM cell configuration has connecting line that electrically connects active regions of two selection transistors of adjacent rows, to form common terminal region for two trench capacitors
04/08/2004DE10245539A1 Pentaarylcyclopentadienyleinheiten als aktive Einheiten in resistiven Speicherelementen Pentaarylcyclopentadienyleinheiten as active units in resistive memory elements
04/08/2004DE10245538A1 DRAM cell configuration has connecting line that electrically connects active regions of two selection transistors of adjacent rows, to form common terminal region for two trench capacitors
04/08/2004DE10245533A1 Teststruktur zum Bestimmen eines Dotierbereiches eines Elektrodenanschlusses zwischen einem Grabenkondensator und einem Auswahltransistor in einem Speicherzellenfeld Test structure for determining a doping region of the electrode terminal between a grave capacitor and a select transistor in a memory cell array
04/08/2004DE10245037A1 Design and manufacture procedure for semiconductor memory building blocks involves designing first and second layouts and using one layout for entire design layout
04/08/2004DE10244178A1 X-ray detector used in computer tomography comprises a luminescent layer for producing electromagnetic radiation, an electrically conducting bottom electrode, a photodetector layer, and an electrically conducting top electrode
04/08/2004DE10244177A1 Photosensitive screen for taking X-ray pictures has top fluorescent layer on contact layer on top of photosensor array with individual contacts on substrate with further contacts to circuit elements
04/08/2004DE10231646A1 Memory cell for permanently storing data has a switching unit with a field effect transistor having a drain region formed as the heating region
04/07/2004EP1406315A2 LED - display with an enhanced light extraction efficiency
04/07/2004EP1406311A1 Methods and apparatus for sensor alignment
04/07/2004EP1406305A2 Charge-coupled device (CCD) and method of operating the same
04/07/2004EP1406304A2 Solid-state imaging device
04/07/2004EP1406296A2 Method for making three-dimensional capacitors for semiconductor memory devices
04/07/2004EP1406295A2 A method of forming a CMOS device
04/07/2004EP1406266A2 Magnetic memory and its write/read method
04/07/2004EP1406188A2 Semiconductor integrated circuit, method of manufacturing semiconductor integrated circuit, charge pump circuit, layout designing apparatus, and layout designing program
04/07/2004EP1406042A1 Led indicator light
04/07/2004EP1405348A2 Hv-soi ldmos device with integrated diode to improve reliability and avalanche ruggedness
04/07/2004EP1405347A2 Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
04/07/2004EP1405346A1 Imaging system and methodology employing reciprocal space optical design
04/07/2004EP1405345A2 Organic, electroluminescent display and method for producing the same
04/07/2004EP1405344A2 Organic, electroluminescent display and the production thereof
04/07/2004EP1405341A2 Bipolar transistor with raised extrinsic base fabricated in an integrated bicmos circuit
04/07/2004EP1405340A2 Non-volatile memory
04/07/2004EP1405314A2 Semiconductor device
04/07/2004EP1405186A1 Device for and method of storing identification data in an integrated circuit
04/07/2004EP1198748B1 method and apparatus achieving flexible selection scan test
04/07/2004EP1008188A4 Solar cell having an integral monolithically grown bypass diode
04/07/2004CN2610495Y Open-circuit device for integrated circuit safety unit
04/07/2004CN1488176A Magnetic storage element, production method and driving method therefor, and memory array
04/07/2004CN1488175A Spin switch and magnetic storage element using it
04/07/2004CN1488173A Trench gate fermi-threshold field effect transistors and methods of fabricating the same
04/07/2004CN1488171A Semiconductor component comprising ESD protection
04/07/2004CN1488168A Self-aligned conductive line for cross-point magnetic memory integrated circuits
04/07/2004CN1488166A Ferro electric thin film, metal thin film or oxide thin film, and method and apparatus for preparation thereof, and electric or electronic device using said thin film
04/07/2004CN1488148A Ferroelectric memory circuit and method for its fabrication
04/07/2004CN1488146A Non orthogonal MRAM device
04/07/2004CN1488145A MRAM bit line word line architecture
04/07/2004CN1488083A Thin film transistor array substrate of liquid crystal display device and producing method thereof
04/07/2004CN1487779A Organic electroluminescent display device and producing method thereof
04/07/2004CN1487774A Electroluminescent display system and electroluminescent lighting sheet
04/07/2004CN1487602A Optical receiving element and producing method thereof, and optical receiving element with built-in circuit
04/07/2004CN1487600A Semiconductor device and producing method thereof
04/07/2004CN1487597A Polysilicon back gate SOI MOSFET for dynamic threshold voltage control
04/07/2004CN1487596A Semiconductor device and producing method thereof
04/07/2004CN1487592A Semiconductor device and producing method thereof
04/07/2004CN1487591A Image sensor for raising production efficiency and sensitivity
04/07/2004CN1487590A Image sensor with picture element isolation region
04/07/2004CN1487589A Solid image pick-up device and producing method thereof
04/07/2004CN1487588A Method for producing crystal structure electrode of oriented PZT capacitor
04/07/2004CN1487587A Electric current mirror image circuit and light signal circuit utilizing the same
04/07/2004CN1487580A Semiconductor device and producing method thereof
04/07/2004CN1487564A Substrate for electronic apparatus, method for producing substrate of electronic apparatus, and electronic apparatus
04/07/2004CN1487526A Non-volatile memory and semi-conductor integrated circuit device
04/07/2004CN1487525A Memory equipment capable of being calibrated and calibrating method thereof
04/07/2004CN1487524A Magnetic memory device and method
04/07/2004CN1487523A Improved diode used in MRAM device and producing method thereof
04/07/2004CN1487402A Single integrated circuit of optical mouse
04/07/2004CN1487400A Complex function device, producing method thereof , touch information system and information inputting device
04/07/2004CN1487348A Semiconductor device and producing method thereof, electrooptical device and electronic equipment
04/07/2004CN1145218C Use of organic and inorganic hybridized material to make thin film transistor of semiconductor channel
04/07/2004CN1145217C Field effect transistor and power amplifier including the same
04/07/2004CN1145216C High density electric connector
04/07/2004CN1145215C Transferring method of thin film device and and application thereof
04/07/2004CN1145214C Channel capacitor with epitaxial cover layer
04/07/2004CN1145196C Method of manufacturing a semiconductor structure with reduced leakage current density
04/07/2004CN1145168C Read/write structure for magnetic-resistance random access memory
04/07/2004CN1145167C Integrated memory with storage unit having magnetic-resistance storage effect