Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
---|
08/15/1989 | US4858187 Programming implementation circuit |
08/15/1989 | US4858186 A circuit for providing a load for the charging of an EPROM cell |
08/15/1989 | US4858185 Zero power, electrically alterable, nonvolatile latch |
08/09/1989 | EP0326885A2 Sequential read access of serial memories with a user defined starting address |
08/09/1989 | EP0326883A2 Zero power, electrically alterable, nonvolatile latch |
08/09/1989 | EP0326878A2 Decoder driver circuit for programming high-capacitance lines |
08/08/1989 | US4855955 Three transistor high endurance eeprom cell |
08/02/1989 | EP0326465A1 Floating-gate EEPROM memory with a transistor for source line selection |
08/02/1989 | EP0326296A2 High-speed data latch with zero data hold time |
08/02/1989 | EP0326053A2 Programmable memory data protection scheme |
08/02/1989 | EP0326004A2 Circuit for sensing the state of matrix cells in MOS EPROM memories |
08/01/1989 | US4853761 Semiconductor device |
07/25/1989 | US4852062 EPROM device using asymmetrical transistor characteristics |
07/25/1989 | US4851720 Low power sense amplifier for programmable logic device |
07/25/1989 | US4851364 Method of forming well regions for field effect transistors utilizing self-aligned techniques |
07/20/1989 | DE3800396A1 Circuit arrangement for programming a read-only memory which can be written repeatedly |
07/18/1989 | US4849942 Protection device for an erasable and reprogrammable read only memory |
07/18/1989 | US4849935 Semiconductor memory including transparent latch circuits |
07/13/1989 | WO1989006429A1 Rom cell and array configuration |
07/11/1989 | US4847811 Pre-charging circuit for word lines of a memory system, in particular with programmable cells |
07/05/1989 | EP0323156A2 Voltage multiplier circuit |
07/05/1989 | EP0323078A2 Electrically-programmable low-impedance anti-fuse element |
07/05/1989 | EP0322900A2 Electrically erasable programmable read-only memory with NAND cell structure |
07/04/1989 | US4845680 Nonvolatile semiconductor memory device |
07/04/1989 | US4845675 High-speed data latch with zero data hold time |
07/04/1989 | US4845538 E2 prom cell including isolated control diffusion |
06/29/1989 | WO1989006068A1 Low power voltage clamp circuit |
06/28/1989 | EP0322002A2 Voltage supply switching device for nonvolatile memories in MOS technology |
06/28/1989 | EP0321933A2 Device for controlling a Read-only memory, and electronic cash register having such a device |
06/28/1989 | EP0321727A1 Method and circuit to protect EEPROM memories against devaluation manipulation |
06/27/1989 | US4843594 Nonvolatile semiconductor memory device with a bias circuit |
06/27/1989 | US4843026 Architecture modification for improved ROM security |
06/21/1989 | EP0320916A2 Electrically erasable and programmable read only memory using stacked-gate cell |
06/21/1989 | EP0320779A2 Sense amplifier |
06/21/1989 | EP0267271A4 In-system programmable logic device. |
06/20/1989 | US4841482 Leakage verification for flash EPROM |
06/15/1989 | WO1989005545A1 Improved low power dual-mode cmos bias voltage generator |
06/07/1989 | EP0319066A2 Bias and precharging circuit for a bit line of EPROM memory cells in CMOS technology |
06/06/1989 | US4837748 Counting RAM |
06/06/1989 | US4837744 Integrated circuit of the logic circuit type comprising an electrically programmable non-volatile memory |
06/06/1989 | US4837742 Electrically programmable ROM |
06/06/1989 | US4837466 Delay circuit |
05/31/1989 | EP0317984A2 Nonvolatile memory |
05/31/1989 | EP0317939A2 Input circuit incorporated in a semiconductor device |
05/31/1989 | EP0178512B1 Mos circuit including an eeprom |
05/30/1989 | US4835742 Word-by-word electrically reprogrammable non-volatile memory and method of operation thereof |
05/30/1989 | US4835741 Frasable electrically programmable read only memory cell using a three dimensional trench floating gate |
05/24/1989 | EP0317443A1 Monolithic electronic device |
05/24/1989 | EP0317442A1 Memory plane and process and prototype of definition of an electronic integrated circuit comprising such a memory plane |
05/24/1989 | EP0317324A2 Programmable semiconductor memory |
05/24/1989 | EP0317323A2 Programmable semiconductor memory |
05/23/1989 | US4833646 Programmable logic device with limited sense currents and noise reduction |
05/17/1989 | EP0315819A2 Method and apparatus for post-packaging testing of one-time programmable memories |
05/16/1989 | US4831593 Semiconductor memory |
05/16/1989 | US4831592 Nonvolatile semiconductor memory device |
05/16/1989 | US4831589 EEPROM programming switch operable at low VCC |
05/10/1989 | EP0315257A1 Series-parallel-series memory comprising redundant storage columns, and picture memory comprising such series-parallel-series memories |
05/09/1989 | US4829482 Current metering apparatus for optimally inducing field emission of electrons in tunneling devices and the like |
05/09/1989 | US4829469 Security system for use with electronic postage meter to prevent lock erasure of data |
05/09/1989 | US4829203 Integrated programmable bit circuit with minimal power requirement |
05/02/1989 | US4827451 Safety device for the programming of an electrically programmable non-volatile memory |
05/02/1989 | US4827450 Integrated circuit with memory comprising a fraud-prevention device |
04/26/1989 | EP0313431A1 Programming method for memory cells and circuit for carrying out this method |
04/26/1989 | EP0312789A2 CMOS read-only electronic memory with static operation |
04/19/1989 | EP0311773A2 Non-volatile memory cell |
04/18/1989 | US4823320 Electrically programmable fuse circuit for an integrated-circuit chip |
04/18/1989 | US4823318 Driving circuitry for EEPROM memory cell |
04/18/1989 | US4823317 EEPROM programming switch |
04/12/1989 | EP0311137A2 Non-volatile semiconductor memory device |
04/11/1989 | US4821240 Semiconductor integrated circuit with nonvolatile memory |
04/11/1989 | US4821239 Programmable sense amplifier for read only memory |
04/11/1989 | US4820941 Decoder driver circuit for programming high-capacitance lines |
04/05/1989 | EP0310194A1 Continuous process for producing linear, secondary, aliphatic alcohol ethoxylates |
04/04/1989 | US4819212 Nonvolatile semiconductor memory device with readout test circuitry |
04/04/1989 | US4818900 Predecode and multiplex in addressing electrically programmable memory |
03/30/1989 | DE3831538A1 Non-volatile semiconductor memory with NAND cell structure |
03/29/1989 | EP0309180A2 Semiconductor non-volatile memory device |
03/28/1989 | US4817055 Semiconductor memory circuit including bias voltage generator |
03/22/1989 | EP0307958A2 Eeprom system with bit error detecting function |
03/21/1989 | US4814849 Monolithically integrated semiconductor circuit |
03/15/1989 | EP0306990A2 Semiconductor memory device with dummy cell array |
03/15/1989 | EP0306962A2 Single-chip microcomputer |
03/15/1989 | EP0128947B1 Integrated circuit voltage multiplier |
03/14/1989 | US4813018 Nonvolatile semiconductor memory device |
03/14/1989 | US4812675 Security element circuit for programmable logic array |
03/09/1989 | WO1989002151A1 Electronic circuit with an eeprom as semiconductor memory for a motor vehicle |
03/07/1989 | US4811294 Data integrity verifying circuit for electrically erasable and programmable read only memory (EEPROM) |
03/07/1989 | US4811293 Method for storing data in an electrically erasable memory for carrying out this method |
03/07/1989 | US4811292 Semiconductor memory in which data readout operation is carried out over wide power voltage range |
03/07/1989 | US4811291 Safety device for electrically programmable read-only memory |
03/07/1989 | US4811287 EEPROM mounting device |
03/07/1989 | CA1250954A1 Programmable reference voltage generator for a read only memory |
03/01/1989 | EP0304850A2 Programmable sense amplifier for read only memory |
02/28/1989 | US4809231 Method and apparatus for post-packaging testing of one-time programmable memories |
02/28/1989 | US4809228 Semiconductor memory device having controllable redundant scheme |
02/28/1989 | US4809227 Read only memory device having memory cells each storing one of three states |
02/28/1989 | US4809224 Read only memory device with memory cells each storing one of three states |
02/21/1989 | US4807188 Nonvolatile memory device with a high number of cycle programming endurance |
02/21/1989 | US4807114 Microcomputer with internally and externally programmed eprom |
02/21/1989 | US4807003 High-reliablity single-poly eeprom cell |