Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/1980
12/23/1980US4241424 Semiconductor devices
12/23/1980CA1092240A1 Semiconductor memory device
12/10/1980EP0020054A1 Semiconductor memory device using one transistor memory cell
12/10/1980EP0019886A1 Semiconductor memory
12/10/1980EP0019882A1 Semiconductor integrated circuit device with non-volatile semiconductor memory cells
12/09/1980US4238694 Silicon or gallium arsenide
12/02/1980US4237547 Program decoder for shared contact eprom
12/02/1980US4237472 High performance electrically alterable read only memory (EAROM)
11/1980
11/25/1980US4236231 Programmable threshold switchable resistive memory cell array
11/12/1980EP0018404A1 Memory system for programmable controller.
11/11/1980US4233673 Electrically resettable non-volatile memory for a fuse system
11/11/1980US4233526 Semiconductor memory device having multi-gate transistors
10/1980
10/29/1980EP0017808A1 Method involving testing an electrically alterable microelectronic memory circuit
10/29/1980EP0017709A1 Memory array device and fabrication process
10/28/1980US4230954 Permanent or semipermanent charge transfer storage systems
10/14/1980US4228527 Electrically reprogrammable non volatile memory
10/14/1980US4228524 Multilevel sequence of erase pulses for amorphous memory devices
10/01/1980EP0016295A1 Device for checking a pilot character written into a memory
09/1980
09/30/1980US4225946 Multilevel erase pulse for amorphous memory devices
09/18/1980WO1980001972A1 Write/restore/erase signal generator for volatile/non-volatile memory system
09/16/1980US4223394 Sensing amplifier for floating gate memory devices
09/09/1980US4222063 VMOS Floating gate memory with breakdown voltage lowering region
09/09/1980US4222062 VMOS Floating gate memory device
09/04/1980WO1980001854A1 Photoelectric write-only sequence controller
08/1980
08/19/1980US4218764 Non-volatile memory refresh control circuit
08/05/1980US4216390 Level shift circuit
07/1980
07/23/1980EP0013523A1 Method for writing a pilot character in an electric-charge storing memory and device obtained by this method
07/23/1980EP0013297A1 Charge transfer storage systems
07/08/1980US4211919 Portable data carrier including a microprocessor
06/1980
06/24/1980US4209849 Non-volatile memory which can be erased word by word constructed in the floating gate technique
06/17/1980US4208729 Automatic data restore apparatus for MNOS temporary store memory
06/11/1980EP0011975A1 A semiconductor element in an EPROM bootstrap circuit
06/11/1980EP0011694A1 Method and apparatus for the reversible adjustment of the electrical parameters of an electrical circuit
06/10/1980CA1079403A1 Circuit for the production of read-out pulses
05/1980
05/29/1980WO1980001122A1 Semiconductor memory device
05/27/1980CA1078517A1 Non-volatile memory device and method of making the same
05/20/1980US4204275 Unisolated EAROM memory array
05/06/1980US4202044 Quaternary FET read only memory
05/06/1980US4201927 Circuit for producing sequentially spaced pulses
04/1980
04/01/1980US4196441 Semiconductor storage cell
03/1980
03/11/1980US4193128 High-density memory with non-volatile storage array
03/11/1980US4193080 Non-volatile memory device
03/06/1980WO1980000383A1 Memory system for programmable controller
03/04/1980US4192016 CMOS-bipolar EAROM
03/04/1980CA1073057A1 Electronically alterable diode logic circuit
01/1980
01/29/1980CA1070836A1 Insulated gate field-effect transistor read-only memory cell
01/22/1980US4185319 Non-volatile memory device
01/22/1980CA1070427A1 N-channel storage field effect transistors
01/15/1980US4184207 High density floating gate electrically programmable ROM
01/15/1980CA1070016A1 Semiconductor floating gate storage device
01/09/1980EP0006167A1 Multi-value FET read only memory
01/01/1980US4181980 Acquisition and storage of analog signals
12/1979
12/25/1979US4180866 Single transistor memory cell employing an amorphous semiconductor threshold device
12/18/1979US4179626 Sense circuit for use in variable threshold transistor memory arrays
12/12/1979EP0005847A1 Memory circuit and its use in an electrically programmable logic array
12/04/1979US4177452 Electrically programmable logic array
11/1979
11/27/1979CA1067208A1 Insulated gate field-effect transistor read-only memory array
11/20/1979US4175291 Non-volatile random access memory cell
11/06/1979US4173791 Insulated gate field-effect transistor read-only memory array
11/06/1979US4173766 Insulated gate field-effect transistor read-only memory cell
10/1979
10/09/1979US4170741 High speed CMOS sense circuit for semiconductor memories
09/1979
09/25/1979US4169291 Eprom using a V-MOS floating gate memory cell
09/18/1979US4168537 Nonvolatile memory system enabling nonvolatile data transfer during power on
08/1979
08/21/1979US4165538 Read-only memory
08/21/1979CA1060993A1 Nonvolatile semiconductor memory
08/08/1979EP0003413A2 Improvements relating to semiconductor memories
08/07/1979US4163985 Nonvolatile punch through memory cell with buried n+ region in channel
07/1979
07/24/1979US4162538 Thin film programmable read-only memory having transposable input and output lines
07/24/1979US4162504 Floating gate solid-state storage device
07/10/1979US4161039 N-Channel storage FET
07/03/1979US4160291 Precharge circuitry for an electrically alterable non-volatile memory
06/1979
06/26/1979US4159540 Memory array address buffer with level shifting
06/13/1979EP0002420A1 Light activated semiconductor device of the field effect transistor type and resulting memory
06/05/1979CA1056057A1 Non-crystalline device memory array
04/1979
04/10/1979US4149270 Variable threshold device memory circuit having automatic refresh feature
04/03/1979CA1052009A1 Method for fabricating a semiconductor memory device
03/1979
03/06/1979US4143421 Tetrode transistor memory logic cell
03/06/1979US4143286 Semiconductor memory device
02/1979
02/27/1979US4142251 Field programmable read-only-memory
02/27/1979US4142112 Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same
02/13/1979US4139911 High speed sense circuit for semiconductor memories
02/13/1979CA1048647A1 Read mostly memory cell having bipolar and famos transistor
02/06/1979US4138737 Non-volatile memory with improved readout
01/1979
01/16/1979CA1046641A1 Switched capacitor non-volatile mnos random access memory cell
01/16/1979CA1046639A1 Associative storage circuit
12/1978
12/19/1978US4130900 Memory with common read/write data line and write-in latch circuit
12/19/1978US4130897 MNOS FET memory retention characterization test circuit with enhanced sensitivity and power conservation
12/19/1978US4130890 Integrated DDC memory with bitwise erase
11/1978
11/28/1978US4127901 MNOS FET memory retention characterization test circuit
11/28/1978US4127900 Reading capacitor memories with a variable voltage ramp
11/07/1978US4124900 Memory using interleaved rows to permit closer spacing
10/1978
10/31/1978US4123771 Metal nitride oxide
10/24/1978US4122544 Electrically alterable floating gate semiconductor memory device with series enhancement transistor
10/24/1978US4122543 Non-volatile memory for fast signals
10/24/1978US4122541 Non-volatile memory device
10/24/1978US4122540 Massive monolithic integrated circuit
10/24/1978US4122531 Memory and control circuit for the memory
10/24/1978CA1041211A1 Filament-type memory semiconductor device and method of making the same
10/10/1978US4119995 Electrically programmable and electrically erasable MOS memory cell
09/1978
09/12/1978US4114055 Unbalanced sense circuit
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