Patents
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Patents for G11C 16 - Erasable programmable read-only memories (44,373)
07/1990
07/18/1990EP0377839A2 Semiconductor memory device capable of preventing data of non-selected memory cell from being degraded
07/18/1990EP0221104B1 Voltage multiplier circuit
07/12/1990DE4000219A1 Semiconductor memory with externally applied programming voltage - has programming voltage detector determining its level w.r.t. preset one
07/11/1990EP0377368A1 Data-processing device having a non-volatile electrically erasable and reprogrammable memory
07/04/1990EP0376290A2 Nonvolatile semiconductor memory device capable of preventing read error caused by overerase state
07/04/1990EP0376285A2 Microcomputer having electrically erasable and programmable nonvolatile memory
07/04/1990EP0376065A2 Semiconductor memory integrated circuit
07/03/1990US4939692 Read-only memory for microprocessor systems having shared address/data lines
07/03/1990US4939690 Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation
06/1990
06/28/1990WO1990007185A1 Data processing device comprising a non-volatile, electrically erasable and reprogrammable memory
06/27/1990EP0375274A1 Electrically erasable and programmable read only memory
06/27/1990EP0375203A2 Fast epal sense amplifier
06/27/1990EP0374936A2 Nonvolatile semiconductor memory system
06/27/1990EP0211069A4 Efficient page mode write circuitry for e?2 proms.
06/26/1990US4937830 Semiconductor memory device having function of checking and correcting error of read-out data
06/26/1990US4937787 Programmable read only memory with means for discharging bit line before program verifying operation
06/21/1990DE3929816A1 EEPROM with NAND cell arrangement - uses memory chains of individual memory cells programmed via relatively small voltages
06/21/1990DE3906494A1 Error bit generation circuit for use in a non-volatile semiconductor memory device
06/20/1990EP0373830A2 Floating gate transistor
06/20/1990EP0373698A2 Selective asperity definition technique suitable for use in fabricating floating-gate transistor
06/20/1990EP0373620A2 Signal distributing unit for various input signals different in voltage level
06/19/1990US4935648 Optimized E2 pal cell for minimum read disturb
06/14/1990WO1990006579A2 Improved disc unit
06/13/1990EP0372873A2 Integrated-circuit configuration having fast local access time
06/12/1990US4933906 Non-volatile semiconductor memory device
06/12/1990US4933827 Regulation of the output voltage of a voltage multiplier
06/05/1990US4932053 Safety device against the unauthorized detection of protected data
06/05/1990US4931997 Semiconductor memory having storage buffer to save control data during bulk erase
06/05/1990US4931993 Memory protection arrangement
06/05/1990US4931128 Electronic parts processing machine
05/1990
05/30/1990EP0370558A2 Writing process with a checkerboard pattern for a matrix of EEPROM memory cells and device for executing the above process
05/30/1990EP0370432A2 High speed differential sense amplifier for use with single transistor memory cells
05/30/1990EP0370416A2 Novel architecture for a flash erase EPROM memory
05/30/1990EP0370308A2 Non-volatile semiconductor memory device having, at the prestage of an address decoder, a level shifter for generating a program voltage
05/29/1990US4930105 Nonvolatile semiconductor memory device with a double gate structure
05/29/1990US4930097 Architecture for an improved performance of a programmable logic device
05/29/1990US4930067 Microcomputer having a high-speed operation mode and a low-speed operation mode with intermittent disabling of sense amplifiers
05/22/1990US4928267 Method of reconditioning an electronically programmable memory device
05/22/1990US4928261 CMOS read-only memory with static operation
05/16/1990EP0368727A1 Security device against the unauthorised detection of protected data
05/16/1990EP0368310A2 Nonvolatile memory device capable of outputting correct read data at proper time
05/16/1990CA2002998A1 User carried device having data base of user with digital display with non-volatile memory
05/15/1990US4926379 Data read circuit for use in semiconductor memory device
05/15/1990US4926070 Voltage level converting circuit
05/08/1990US4924438 Non-volatile semiconductor memory including a high voltage switching circuit
05/08/1990US4924278 EEPROM using a merged source and control gate
05/03/1990WO1990004855A1 Nonvolatile semiconductor memory and method of producing the same
05/02/1990EP0366403A2 A semiconductor memory device
05/02/1990EP0365721A1 Programmable semiconductor memory
05/02/1990EP0365720A1 Programmable semiconductor memory
05/01/1990US4922456 Method of reducing wearout in a non-volatile memory with double buffer
05/01/1990US4922402 CMOS voltage multiplier
05/01/1990US4922133 Voltage detecting circuit
04/1990
04/24/1990US4920518 Semiconductor integrated circuit with nonvolatile memory
04/24/1990US4920512 Non-volatile semiconductor memory capable of readily erasing data
04/24/1990US4920075 A semiconductor substrate and a transparent layer; etching; thermal treating to form a curvature
04/11/1990EP0362715A2 Memory comprising a programmable static selection circuit for programmable devices
04/11/1990EP0252794B1 Device for detecting the functioning of the sensing system of an eprom or an eeprom memory cell
04/11/1990EP0199744B1 Fault tolerant memory array
04/10/1990US4916665 Semiconductor memory device with P-channel MOS transistor load circuit
04/10/1990US4916334 High voltage booster circuit for use in EEPROMs
04/04/1990EP0361972A2 Non-volatile semiconductor memory device with nand type memory cell arrays
04/04/1990EP0361546A2 Semiconductor memory device
03/1990
03/28/1990EP0360504A2 One transistor flash eprom cell
03/27/1990US4912749 Nonvolatile semiconductor memory
03/27/1990US4912676 Erasable programmable memory
03/27/1990US4912534 Nonvolatile semiconductor memory device
03/22/1990WO1990003033A1 Eprom memory with internal signature concerning, in particular, the programming mode
03/21/1990EP0359561A2 Sense amplifier precharge control
03/20/1990US4910710 Input circuit incorporated in a semiconductor device
03/20/1990US4910707 EEPROM with protective circuit
03/20/1990US4910162 Integrated circuit; containing silicon switch transistor
03/13/1990US4908799 Device to detect the functioning of the read system of an EPROM or EEPROM memory cell
03/13/1990US4908795 Semiconductor integrated circuit device with built-in memories
03/08/1990WO1990002405A1 Transistor breakdown protection circuit
03/07/1990EP0357503A2 Programmable read only memory having bipolar complementary metal oxide semiconductor structure
03/07/1990EP0357361A2 IC card and method for writing information therein
03/07/1990EP0357333A2 Sealed charge storage structure
03/07/1990EP0357213A2 Low power sense amplifier for programmable logic device
03/07/1990EP0356650A2 Driving circuitry for EEPROM memory cell
03/07/1990EP0356571A1 Control circuit for EEPROM
03/07/1990EP0356459A1 Improvements in digital computers
03/06/1990US4907202 Control circuit for EEPROM
03/06/1990US4907198 Semiconductor memory device
03/06/1990US4907197 Non-volatile semiconductor memory device
02/1990
02/27/1990US4905314 Semiconductor integrated circuit device having an object circuit to which output voltages of the sub- and main booster circuits are applied
02/27/1990US4905197 Semiconductor memory having circuitry for discharging a digit line before verifying operation
02/27/1990US4905195 Semiconductor memory
02/27/1990US4905140 Semiconductor integrated circuit device
02/27/1990US4905063 Floating gate memories
02/20/1990US4903265 Method and apparatus for post-packaging testing of one-time programmable memories
02/20/1990US4903237 Differential sense amplifier circuit for high speed ROMS, and flash memory devices
02/20/1990US4903236 Nonvolatile semiconductor memory device and a writing method therefor
02/20/1990US4903235 Semiconductor memory
02/14/1990EP0354860A1 Highly integrated EPROM device laid out in a grid and having an altered coupling factor and a redundancy capability
02/14/1990EP0354859A1 Highly integrated EPROM laid out in a grid and having an altered coupling factor
02/14/1990EP0354457A2 A bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
02/13/1990US4901281 Semiconductor memory device having two column transfer gate transistor groups independently provided for a sense amplifier and a programmed circuit
02/06/1990US4899309 Current sense circuit for a ROM system
02/06/1990US4899205 Electrically-programmable low-impedance anti-fuse element
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