Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/1991
10/15/1991US5057707 Charge pump including feedback circuitry for eliminating the requirement of a separate oscillator
10/15/1991CA1290823C Programmable sense amplifier for read only memory
10/09/1991EP0450632A2 Nonvolatile semiconductor memory device
10/08/1991US5056063 Active sense amplifier with dynamic pre-charge transistor
10/08/1991US5056062 Method of operating an eprom including delaying and boosting steps
10/02/1991EP0449610A2 Electrically erasable programmable read-only memory with threshold value measurement circuit
10/02/1991DE4110371A1 EEPROM of NAND cell type - has memory cell transistors determining number of cell units with preset number of transistors in series
10/01/1991US5054001 Transistor breakdown protection circuit
10/01/1991US5053992 Prevention of inspection of secret data stored in encapsulated integrated circuit chip
10/01/1991US5053990 Program/erase selection for flash memory
09/1991
09/25/1991EP0448118A2 Differential cell-type EPROM incorporating stress test circuit
09/25/1991EP0447856A1 Nonvolatile semiconducteur memory
09/24/1991US5052002 Method of detecting and indicating errors in a memory device
09/24/1991US5051956 Memory cell having means for maintaining the gate and substrate at the same potential
09/24/1991US5051953 EEPROM device including read, write, and erase voltage switching circuits
09/24/1991US5051793 Coplanar flash EPROM cell and method of making same
09/18/1991EP0447277A1 Ultra high speed memory having a drain voltage limiter for cells
09/18/1991EP0447276A1 Memory circuit having a word-line selection storage element for erasure of a block of informations
09/18/1991EP0447242A2 Semiconductor integrated circuit device having output stabilizing means
09/17/1991USRE33693 Device using ordered semiconductor alloy
09/17/1991US5050125 Electrically erasable programmable read-only memory with NAND cellstructure
09/17/1991US5050124 Semiconductor memory having load transistor circuit
09/17/1991US5050123 Radiation shield for EPROM cells
09/17/1991US5049516 Method of manufacturing semiconductor memory device
09/10/1991US5047982 Write protection method and apparatus for an EEPROM
09/10/1991US5047981 Bit and block erasing of an electrically erasable and programmable read-only memory array
09/10/1991US5047924 Microcomputer
09/10/1991US5047816 Self-aligned dual-gate transistor
09/10/1991US5047814 E2 PROM cell including isolated control diffusion
09/10/1991US5047362 Method of making large-scale EPROM memory with a checker board pattern and an improved coupling factor
09/03/1991US5046180 Semiconductor integrated circuit device comprising non-reprogrammable internal memory device
08/1991
08/29/1991DE4025640A1 Semiconductor EEPROM with matrix of memory cells - has first writing word line, and second one coupled to different memory cell
08/28/1991EP0443989A2 Sense circuit for reading data stored in nonvolatile memory cells
08/28/1991EP0443777A2 Write circuit for non-volatile memory device
08/28/1991EP0443776A2 Sense circuit for non-volatile memory device
08/28/1991EP0443775A2 Signature circuit for non-volatile memory device
08/28/1991EP0443610A2 Nonvolatile semiconductor memory device
08/27/1991US5043942 Nand cell type programmable read-only memory with common control gate driver circuit
08/27/1991US5043941 Non-volatile memory
08/27/1991US5043940 Flash EEPROM memory systems having multistate storage cells
08/27/1991US5043004 Method for making a ceramic lid for hermetic sealing of an EPROM circuit
08/21/1991EP0442335A1 Semiconductor memory device including nonvolatile memory cells, enhancement type load transistors, and peripheral circuits having enhancement type transistors
08/20/1991US5042009 Method for programming a floating gate memory device
08/20/1991US5041886 Nonvolatile semiconductor memory device and manufacturing method thereof
08/20/1991US5041746 Sense amplifier providing a rapid output transition
08/14/1991EP0441510A2 Method for programming programmable elements in programmable devices
08/14/1991EP0441409A2 Nonvolatile semiconductor memory device
08/14/1991EP0440653A1 High density integrated circuit analog signal recording and playback system.
08/13/1991US5040148 Semiconductor memory device with address transition actuated dummy cell
08/13/1991US5040147 Nonvolatile semiconductor memory
08/13/1991US5040036 Trench-isolated self-aligned split-gate EEPROM transistor and memory array
08/13/1991US5039882 Address decoder circuit for non-volatile memory
08/08/1991DE4103107A1 Single chip microcomputer controller for engine control - has chip mounted on circuit board with inputs for writing data into memory
08/07/1991EP0440265A2 Nonvolatile semiconductor memory device
08/06/1991US5038327 Decoder circuit of erasable programmable read only memory for avoiding erroneous operation caused by parasitic capacitors
07/1991
07/31/1991EP0439188A2 Semiconductor integrated circuit
07/31/1991EP0438753A2 Circuit for replacing an EPROM
07/30/1991US5036488 Automatic programming and erasing device for electrically erasable programmable read-only memories
07/30/1991US5036460 Microprocessor having miswriting preventing function
07/24/1991EP0438172A1 Semiconductor memory device having monitoring function
07/24/1991EP0438050A2 Nonvolatile semiconductor memory system
07/24/1991EP0437791A2 Nonvolatile semiconductor memory wherein dummy cells are used for generating a potential for detecting data
07/24/1991EP0217846B1 Electrically programmable read-only memory
07/24/1991CN1053319A Method and apparatus for reading and programming electrically programming memory cells
07/23/1991US5034926 Non-volatile semiconductor memory
07/23/1991US5034922 Intelligent electrically erasable, programmable read-only memory with improved read latency
07/17/1991EP0436814A2 Method and apparatus for reading and programming electrically programmable memory cells
07/16/1991US5033023 High density EEPROM cell and process for making the cell
07/09/1991US5031149 Non-volatile semiconductor memory device having, at the prestage of an address decoder, a level shifter for generating a program voltage
07/09/1991US5031148 MOS semiconductor memory device
07/09/1991US5031145 Sense amplifier
07/03/1991EP0434738A1 Eprom memory with internal signature concerning, in particular, the programming mode.
07/02/1991US5029282 Voltage regulator circuit
07/02/1991US5029139 Word erasable buried bit line EEPROM
07/02/1991US5029138 Sense amplifier circuit coupled to a bit line pair for increasing a difference in voltage level at an improved speed
07/02/1991US5029131 Fault tolerant differential memory cell and sensing
07/02/1991US5029130 Single transistor non-valatile electrically alterable semiconductor memory device
07/02/1991US5028979 Table cloth matrix of EPROM memory cells with buried junctions, individually accessible by a traditional decoder
06/1991
06/26/1991EP0434252A2 Sense amplifier
06/26/1991EP0433799A2 PROM speed measuring method
06/25/1991US5027321 Apparatus and method for improved reading/programming of virtual ground EPROM arrays
06/25/1991US5027320 EPROM circuit having enhanced programmability and improved speed and reliability
06/25/1991US5027053 Low power VCC /2 generator
06/19/1991EP0432481A2 Methods and apparatus for verifying the state of a plurality of electrically programmable memory cells
06/18/1991US5025417 Semiconductor memory device capable of preventing data of non-selected memory cell from being degraded
06/12/1991EP0432050A1 Programming voltage generating circuit for programmable memory
06/12/1991EP0432049A1 MOS blow-out fuse with programmable tunnel oxide
06/12/1991EP0431911A2 Memory cell having floating gate and semiconductor memory using the same
06/12/1991EP0431862A2 Sense circuitry
06/11/1991US5023839 Redundant semiconductor memory device
06/11/1991US5023837 Bitline segmentation in logic arrays
06/11/1991US5023834 Automated EPROM and EEPROM reading, erasing, and writing system
06/05/1991EP0430455A2 Nonvolatile memory device and operating method
06/05/1991EP0430191A2 Semiconductor memory
06/05/1991EP0429720A1 Single-transistor-EEPROM-cell
06/04/1991US5022009 Semiconductor memory device having reading operation of information by differential amplification
06/04/1991US5022008 PROM speed measuring method
06/04/1991US5022003 Semiconductor memory device
06/04/1991US5022002 Programmable ROM having a reduced number of power source terminals
06/04/1991US5022001 Method for the programming of the memory cells of a memory and a circuit to implement this method
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