Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/1997
02/05/1997EP0757359A2 Semiconductor memory devices
02/05/1997EP0757358A1 A circuit for reading non-volatile memories
02/05/1997EP0757357A1 Current detecting circuit
02/05/1997EP0757356A1 Flash EEPROM with controlled discharge time of the word lines and source potentials after erase
02/05/1997EP0756746A1 Method for the secure updating of an eeprom memory
02/05/1997EP0530376B1 Semiconductor memory having nonvolatile semiconductor memory cell
02/04/1997US5600595 Non-volatile semiconductor device with an electrically erasable and programmable read only memory showing an extremely high speed batch erasure operation
02/04/1997US5600593 Apparatus and method for reducing erased threshold voltage distribution in flash memory arrays
02/04/1997US5600592 Nonvolatile semiconductor memory device having a word line to which a negative voltage is applied
02/04/1997US5600164 Non-volatile semiconductor memory device
02/04/1997US5600163 Semiconductor element and semiconductor memory device using the same
01/1997
01/30/1997WO1997003444A1 System comprising field programmable gate array and intelligent memory
01/30/1997WO1997003401A1 Address comparing for non-precharged redundancy address matching
01/29/1997EP0756328A2 Non-volatile memory cell having a single polysilicon gate
01/29/1997EP0756287A2 A memory sensing circuit employing multi-current mirrors
01/29/1997EP0756286A1 Flash EEPROM with on-chip erase source voltage generator
01/29/1997CN1141491A Non-losable semi-conductor storage device
01/28/1997US5598573 Multiple chip processor architecture with reset intercept circuit
01/28/1997US5598569 Data processor having operating modes selected by at least one mask option bit and method therefor
01/28/1997US5598548 Memory management device having empty memory block maintenance function and facsimile apparatus using it
01/28/1997US5598370 Nonvolatile memory with cluster-erase flash capability and solid state file apparatus using the same
01/28/1997US5598369 Flash EEPROM array with floating substrate erase operation
01/28/1997US5598368 Batch erasable nonvolatile memory device and erasing method
01/28/1997US5598367 Trench EPROM
01/28/1997US5598365 High-density read-only memory
01/28/1997US5597750 Method of manufacturing a matrix of memory cells having control gates
01/28/1997US5597748 Method of manufacturing NAND type EEPROM
01/23/1997WO1997002573A1 Method of up-dating the contents of the electronic memory of an electronic appliance
01/23/1997WO1997002572A1 Non-volatile memory cells using only positive charge to store data
01/23/1997DE19526012A1 Elektrisch lösch- und programmierbare nicht-flüchtige Speicherzelle Electrically erasable and programmable non-volatile memory cell
01/22/1997EP0674264B1 Circuit for selecting redundant memory elements and FLASH EEPROM containing said circuit
01/21/1997US5596734 Method and apparatus for programming embedded memories of a variety of integrated circuits using the IEEE test access port
01/21/1997US5596544 Very large scale integrated planar read only memory
01/21/1997US5596532 Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
01/21/1997US5596531 Method for decreasing the discharge time of a flash EPROM cell
01/21/1997US5596530 Flash EPROM with block erase flags for over-erase protection
01/21/1997US5596528 Method of using source bias to raise threshold voltages and/or to compact threshold voltages
01/21/1997US5596527 Electrically alterable n-bit per cell non-volatile memory with reference cells
01/21/1997US5596526 Non-volatile memory system of multi-level transistor cells and methods using same
01/21/1997US5596525 Memory cell of nonvolatile semiconductor memory device
01/21/1997US5596524 CMOS memory cell with gate oxide of both NMOS and PMOS transistors as tunneling window for program and erase
01/21/1997US5596523 Electrically erasable programmable read-only memory with an array of one-transistor memory cells
01/21/1997US5596522 Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
01/16/1997WO1997001847A2 Electrically erasable and programmable read only memory with non-uniform dielectric thickness
01/16/1997WO1997001846A1 An integrated circuit having enable control circuitry
01/15/1997EP0753859A1 Method for setting the threshold voltage of a reference memory cell
01/15/1997EP0700598A4 Negative voltage generator for flash eprom design
01/15/1997CN1140315A Flash memory card
01/14/1997US5594888 Circuit for speeding up a read operation from a ROM, the ROM serving to store program data corresponding to even-numbered addresses, the circuit including an address generator for generating an incremented address to the ROM
01/14/1997US5594793 Integrated circuit containing a protected memory and secured system using said integrated circuit
01/14/1997US5594703 End-of-count detecting device for nonvolatile memories
01/14/1997US5594697 Semiconductor device
01/14/1997US5594696 Improvemetns in a detection circuit with a level shifting circuit
01/14/1997US5594694 Memory circuit with switch for selectively connecting an input/output pad directly to a nonvolatile memory cell
01/14/1997US5594693 Matrix device with redundancy fuses for integrated memory
01/14/1997US5594692 Semiconductor integrated circuit
01/14/1997US5594689 Non-volatile semiconductor memory capable of erase- verifying memory cells in a test mode using a defective count circuit activated by a test mode signal
01/14/1997US5594687 Completely complementary MOS memory cell with tunneling through the NMOS and PMOS transistors during program and erase
01/14/1997US5594686 Method and apparatus for protecting data stored in flash memory
01/09/1997WO1997001172A1 Method for page writing to flash memory using channel hot-carrier injection
01/09/1997DE19525916A1 Verfahren zum Aktualisieren des Speicherinhaltes eines elektronischen Speichers eines elektronischen Gerätes A method for updating the memory contents of an electronic memory of an electronic device
01/08/1997EP0752721A2 Nonvolatile semiconductor memory and driving method and fabrication method of the same
01/08/1997CN1139812A Multi-block erasing and identification device and method for non-volative semiconductor memory device
01/07/1997US5592669 File structure for a non-volatile block-erasable semiconductor flash memory
01/07/1997US5592641 Method and device for selectively locking write access to blocks in a memory array using write protect inputs and block enabled status
01/07/1997US5592430 Semiconductor device equipped with simple stable switching circuit for selectively supplying different power voltages
01/07/1997US5592429 Writing/erasing time interval determining circuit
01/07/1997US5592427 Semiconductor memory having a sense amplifier with load transistors having different load characteristics
01/07/1997US5592420 Programmable power generation circuit for flash EEPROM memory systems
01/07/1997US5592419 Flash memory with improved erasability and its circuitry
01/07/1997US5592417 Non-volatile programmable bistable multivibrator, programmable by the source, for memory redundancy circuit
01/07/1997US5592416 Electronic storage circuit
01/07/1997US5592415 Non-volatile semiconductor memory
01/07/1997US5592409 Nonvolatile memory
01/07/1997US5592063 Voltage generator circuit
01/07/1997US5592003 Nonvolatile semiconductor memory and method of rewriting data thereto
01/07/1997US5592001 Non-volatile semiconductor memory device
01/07/1997US5592000 Non-volatile semiconductor memory device programmable and erasable at low voltage
01/02/1997DE19625660A1 Semiconductor memory component for EEPROM with NAND cell matrix
01/01/1997CN1139276A Auto-program circuit in nonvolatile semiconductor memory device
12/1996
12/31/1996US5590306 Memory card management system for writing data with usage and recording codes made significant
12/31/1996US5590303 Memory designation control device
12/31/1996US5590076 Channel hot-carrier page write
12/31/1996US5590075 Method for testing an electrically erasable and programmable memory device
12/31/1996US5590074 Nonvolatile semiconductor memory
12/31/1996US5590073 Random access memory having flash memory
12/31/1996US5590072 Nonvolatile semiconductor memory device
12/31/1996US5589700 Semiconductor nonvolatile memory
12/31/1996US5589699 Electrically erasable programmable non-volatile semiconductor memory device having select gates and small number of contact holes
12/27/1996EP0750397A1 Switching circuit for selectively providing voltages of opposed signs
12/27/1996EP0750315A2 Non-volatile semiconductor memory
12/27/1996EP0750314A1 Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices
12/27/1996EP0750313A1 EEPROM memory, programmed and erased by Fowler-Nordheim effect
12/27/1996EP0750244A1 Negative voltage generating charge pump circuit
12/27/1996EP0715736A4 Memory device with switching of data stream modes
12/24/1996US5587960 Integrated circuit memory device with voltage boost
12/24/1996US5587951 High speed, low voltage non-volatile memory
12/24/1996US5587949 Method for programming an ETOX EPROM or flash memory when cells of the array are formed to store multiple bits of data
12/24/1996US5587948 Nonvolatile semiconductor memory with NAND structure memory arrays
12/24/1996US5587947 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase