Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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02/05/1997 | EP0757359A2 Semiconductor memory devices |
02/05/1997 | EP0757358A1 A circuit for reading non-volatile memories |
02/05/1997 | EP0757357A1 Current detecting circuit |
02/05/1997 | EP0757356A1 Flash EEPROM with controlled discharge time of the word lines and source potentials after erase |
02/05/1997 | EP0756746A1 Method for the secure updating of an eeprom memory |
02/05/1997 | EP0530376B1 Semiconductor memory having nonvolatile semiconductor memory cell |
02/04/1997 | US5600595 Non-volatile semiconductor device with an electrically erasable and programmable read only memory showing an extremely high speed batch erasure operation |
02/04/1997 | US5600593 Apparatus and method for reducing erased threshold voltage distribution in flash memory arrays |
02/04/1997 | US5600592 Nonvolatile semiconductor memory device having a word line to which a negative voltage is applied |
02/04/1997 | US5600164 Non-volatile semiconductor memory device |
02/04/1997 | US5600163 Semiconductor element and semiconductor memory device using the same |
01/30/1997 | WO1997003444A1 System comprising field programmable gate array and intelligent memory |
01/30/1997 | WO1997003401A1 Address comparing for non-precharged redundancy address matching |
01/29/1997 | EP0756328A2 Non-volatile memory cell having a single polysilicon gate |
01/29/1997 | EP0756287A2 A memory sensing circuit employing multi-current mirrors |
01/29/1997 | EP0756286A1 Flash EEPROM with on-chip erase source voltage generator |
01/29/1997 | CN1141491A Non-losable semi-conductor storage device |
01/28/1997 | US5598573 Multiple chip processor architecture with reset intercept circuit |
01/28/1997 | US5598569 Data processor having operating modes selected by at least one mask option bit and method therefor |
01/28/1997 | US5598548 Memory management device having empty memory block maintenance function and facsimile apparatus using it |
01/28/1997 | US5598370 Nonvolatile memory with cluster-erase flash capability and solid state file apparatus using the same |
01/28/1997 | US5598369 Flash EEPROM array with floating substrate erase operation |
01/28/1997 | US5598368 Batch erasable nonvolatile memory device and erasing method |
01/28/1997 | US5598367 Trench EPROM |
01/28/1997 | US5598365 High-density read-only memory |
01/28/1997 | US5597750 Method of manufacturing a matrix of memory cells having control gates |
01/28/1997 | US5597748 Method of manufacturing NAND type EEPROM |
01/23/1997 | WO1997002573A1 Method of up-dating the contents of the electronic memory of an electronic appliance |
01/23/1997 | WO1997002572A1 Non-volatile memory cells using only positive charge to store data |
01/23/1997 | DE19526012A1 Elektrisch lösch- und programmierbare nicht-flüchtige Speicherzelle Electrically erasable and programmable non-volatile memory cell |
01/22/1997 | EP0674264B1 Circuit for selecting redundant memory elements and FLASH EEPROM containing said circuit |
01/21/1997 | US5596734 Method and apparatus for programming embedded memories of a variety of integrated circuits using the IEEE test access port |
01/21/1997 | US5596544 Very large scale integrated planar read only memory |
01/21/1997 | US5596532 Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range |
01/21/1997 | US5596531 Method for decreasing the discharge time of a flash EPROM cell |
01/21/1997 | US5596530 Flash EPROM with block erase flags for over-erase protection |
01/21/1997 | US5596528 Method of using source bias to raise threshold voltages and/or to compact threshold voltages |
01/21/1997 | US5596527 Electrically alterable n-bit per cell non-volatile memory with reference cells |
01/21/1997 | US5596526 Non-volatile memory system of multi-level transistor cells and methods using same |
01/21/1997 | US5596525 Memory cell of nonvolatile semiconductor memory device |
01/21/1997 | US5596524 CMOS memory cell with gate oxide of both NMOS and PMOS transistors as tunneling window for program and erase |
01/21/1997 | US5596523 Electrically erasable programmable read-only memory with an array of one-transistor memory cells |
01/21/1997 | US5596522 Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
01/16/1997 | WO1997001847A2 Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
01/16/1997 | WO1997001846A1 An integrated circuit having enable control circuitry |
01/15/1997 | EP0753859A1 Method for setting the threshold voltage of a reference memory cell |
01/15/1997 | EP0700598A4 Negative voltage generator for flash eprom design |
01/15/1997 | CN1140315A Flash memory card |
01/14/1997 | US5594888 Circuit for speeding up a read operation from a ROM, the ROM serving to store program data corresponding to even-numbered addresses, the circuit including an address generator for generating an incremented address to the ROM |
01/14/1997 | US5594793 Integrated circuit containing a protected memory and secured system using said integrated circuit |
01/14/1997 | US5594703 End-of-count detecting device for nonvolatile memories |
01/14/1997 | US5594697 Semiconductor device |
01/14/1997 | US5594696 Improvemetns in a detection circuit with a level shifting circuit |
01/14/1997 | US5594694 Memory circuit with switch for selectively connecting an input/output pad directly to a nonvolatile memory cell |
01/14/1997 | US5594693 Matrix device with redundancy fuses for integrated memory |
01/14/1997 | US5594692 Semiconductor integrated circuit |
01/14/1997 | US5594689 Non-volatile semiconductor memory capable of erase- verifying memory cells in a test mode using a defective count circuit activated by a test mode signal |
01/14/1997 | US5594687 Completely complementary MOS memory cell with tunneling through the NMOS and PMOS transistors during program and erase |
01/14/1997 | US5594686 Method and apparatus for protecting data stored in flash memory |
01/09/1997 | WO1997001172A1 Method for page writing to flash memory using channel hot-carrier injection |
01/09/1997 | DE19525916A1 Verfahren zum Aktualisieren des Speicherinhaltes eines elektronischen Speichers eines elektronischen Gerätes A method for updating the memory contents of an electronic memory of an electronic device |
01/08/1997 | EP0752721A2 Nonvolatile semiconductor memory and driving method and fabrication method of the same |
01/08/1997 | CN1139812A Multi-block erasing and identification device and method for non-volative semiconductor memory device |
01/07/1997 | US5592669 File structure for a non-volatile block-erasable semiconductor flash memory |
01/07/1997 | US5592641 Method and device for selectively locking write access to blocks in a memory array using write protect inputs and block enabled status |
01/07/1997 | US5592430 Semiconductor device equipped with simple stable switching circuit for selectively supplying different power voltages |
01/07/1997 | US5592429 Writing/erasing time interval determining circuit |
01/07/1997 | US5592427 Semiconductor memory having a sense amplifier with load transistors having different load characteristics |
01/07/1997 | US5592420 Programmable power generation circuit for flash EEPROM memory systems |
01/07/1997 | US5592419 Flash memory with improved erasability and its circuitry |
01/07/1997 | US5592417 Non-volatile programmable bistable multivibrator, programmable by the source, for memory redundancy circuit |
01/07/1997 | US5592416 Electronic storage circuit |
01/07/1997 | US5592415 Non-volatile semiconductor memory |
01/07/1997 | US5592409 Nonvolatile memory |
01/07/1997 | US5592063 Voltage generator circuit |
01/07/1997 | US5592003 Nonvolatile semiconductor memory and method of rewriting data thereto |
01/07/1997 | US5592001 Non-volatile semiconductor memory device |
01/07/1997 | US5592000 Non-volatile semiconductor memory device programmable and erasable at low voltage |
01/02/1997 | DE19625660A1 Semiconductor memory component for EEPROM with NAND cell matrix |
01/01/1997 | CN1139276A Auto-program circuit in nonvolatile semiconductor memory device |
12/31/1996 | US5590306 Memory card management system for writing data with usage and recording codes made significant |
12/31/1996 | US5590303 Memory designation control device |
12/31/1996 | US5590076 Channel hot-carrier page write |
12/31/1996 | US5590075 Method for testing an electrically erasable and programmable memory device |
12/31/1996 | US5590074 Nonvolatile semiconductor memory |
12/31/1996 | US5590073 Random access memory having flash memory |
12/31/1996 | US5590072 Nonvolatile semiconductor memory device |
12/31/1996 | US5589700 Semiconductor nonvolatile memory |
12/31/1996 | US5589699 Electrically erasable programmable non-volatile semiconductor memory device having select gates and small number of contact holes |
12/27/1996 | EP0750397A1 Switching circuit for selectively providing voltages of opposed signs |
12/27/1996 | EP0750315A2 Non-volatile semiconductor memory |
12/27/1996 | EP0750314A1 Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices |
12/27/1996 | EP0750313A1 EEPROM memory, programmed and erased by Fowler-Nordheim effect |
12/27/1996 | EP0750244A1 Negative voltage generating charge pump circuit |
12/27/1996 | EP0715736A4 Memory device with switching of data stream modes |
12/24/1996 | US5587960 Integrated circuit memory device with voltage boost |
12/24/1996 | US5587951 High speed, low voltage non-volatile memory |
12/24/1996 | US5587949 Method for programming an ETOX EPROM or flash memory when cells of the array are formed to store multiple bits of data |
12/24/1996 | US5587948 Nonvolatile semiconductor memory with NAND structure memory arrays |
12/24/1996 | US5587947 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase |