| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 02/11/1998 | CN1173044A Semiconductor elemetn and data processing equipment ted used it |
| 02/11/1998 | CN1173043A Semiconductor memory device |
| 02/10/1998 | US5717642 Load signal generating method and circuit for nonvolatile memories |
| 02/10/1998 | US5717640 ROM type semiconductor memory device with large operating margin |
| 02/10/1998 | US5717637 Semiconductor memory device |
| 02/10/1998 | US5717636 EEPROM memory with contactless memory cells |
| 02/10/1998 | US5717635 High density EEPROM for solid state file |
| 02/10/1998 | US5717634 Programmable and convertible non-volatile memory array |
| 02/04/1998 | EP0822598A1 Single-chip contact-less read-only memory (rom) device and the method for fabricating the device |
| 02/04/1998 | EP0822558A2 High-speed low-power consumption semiconductor non-volatile memory device |
| 02/04/1998 | EP0822557A2 Non-volatile semiconductor memory device with variable source voltage |
| 02/04/1998 | CN1172328A Method of erasing flash memory device |
| 02/03/1998 | US5715431 Tamper proof security measure in data writing to non-volatile memory |
| 02/03/1998 | US5715423 Memory device with an internal data transfer circuit |
| 02/03/1998 | US5715204 Sense amplifier with hysteresis |
| 02/03/1998 | US5715196 Method for driving a non-volatile semiconductor memory |
| 02/03/1998 | US5715195 Programmable memory verify "0" and verify "1" circuit and method |
| 02/03/1998 | US5715194 Bias scheme of program inhibit for random programming in a nand flash memory |
| 02/03/1998 | US5715193 Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks |
| 02/03/1998 | US5714768 Second-layer phase change memory array on top of a logic device |
| 02/03/1998 | US5714766 Nano-structure memory device |
| 02/03/1998 | US5714416 Semiconductor memory device and write-once, read-only semiconductor memory array using amorphous-silicon and method therefor |
| 02/03/1998 | US5714412 Using an erasable programmable read only memory with tunnel oxide process |
| 01/29/1998 | WO1998003977A1 Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| 01/29/1998 | WO1998003915A2 Flash memory card |
| 01/29/1998 | DE19649410A1 Non volatile memory cell for e.g. flash EEPROM or flash memory card |
| 01/28/1998 | EP0821485A2 Call-unit count device |
| 01/28/1998 | CN1171632A Medium voltage generating circuit and nonvolatile semiconductor memory containing same |
| 01/28/1998 | CN1171600A Nonvolatile memory cell and method for programming same |
| 01/27/1998 | US5712969 Method for completely reprogramming an erasable, non-volatile memory |
| 01/27/1998 | US5712819 Flash EEPROM system with storage of sector characteristic information within the sector |
| 01/27/1998 | US5712818 Data loading circuit for partial program of nonvolatile semiconductor memory |
| 01/27/1998 | US5712815 Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
| 01/27/1998 | US5712180 EEPROM with split gate source side injection |
| 01/22/1998 | WO1998002816A1 Block erasable memory system defect handling |
| 01/22/1998 | WO1997047041A3 Programmable, non-volatile memory device, and method of manufacturing such a device |
| 01/22/1998 | DE19704999A1 Programming method for non volatile memory, e.g. EEPROM |
| 01/21/1998 | EP0820102A2 Read-only semiconductor memory device |
| 01/21/1998 | EP0819308A1 Flash programming of flash eeprom array |
| 01/21/1998 | CN1170934A Method of programming nonvolatile memory |
| 01/20/1998 | US5710734 Semiconductor memory device and data writing method thereof |
| 01/14/1998 | EP0818788A2 Fast FLASH EPROM programming and pre-programming circuit design |
| 01/13/1998 | US5708615 Semiconductor memory device with reduced current consumption during precharge and reading periods |
| 01/13/1998 | US5708606 Semiconductor memory device and high-voltage switching circuit |
| 01/13/1998 | US5708605 Nonvolatile semiconductor memory device having variable writing and erasing time periods |
| 01/13/1998 | US5708603 Semiconductor memory device |
| 01/13/1998 | US5708602 Non-volatile semiconductor memory device and method for verifying operating of the same |
| 01/13/1998 | US5708600 Method for writing multiple value into nonvolatile memory in an equal time |
| 01/13/1998 | US5708588 Flash EEPROM memory with improved discharged speed using substrate bias and method therefor |
| 01/13/1998 | US5708387 Fast 3-state booster-circuit |
| 01/13/1998 | US5708285 Non-volatile semiconductor information storage device |
| 01/08/1998 | WO1998000846A1 Method and apparatus for protecting flash memory |
| 01/07/1998 | EP0817200A1 Clock circuit for reading a multilevel non volatile memory cells device |
| 01/06/1998 | US5706242 Semiconductor device having a controllable voltage supply |
| 01/06/1998 | US5706241 Eeprom semiconductor memory device including circuit for generating a voltage higher than a power supply voltage |
| 01/06/1998 | US5706240 Voltage regulator for memory device |
| 01/06/1998 | US5706235 Memory circuit with switch for selectively connecting an I/O pad directly to a nonvolatile memory cell and method for operating same |
| 01/06/1998 | US5706228 Method for operating a memory array |
| 01/06/1998 | US5706227 Semiconductor memory cell |
| 01/02/1998 | DE19727378A1 Read amplifier circuit for ROM memory |
| 12/31/1997 | CN1169204A Voltage supplies for flash memory |
| 12/30/1997 | US5703820 Semiconductor memory device with precharge time improved |
| 12/30/1997 | US5703809 Overcharge/discharge voltage regulator for EPROM memory array |
| 12/30/1997 | US5703808 Non-volatile memory cell and method of programming |
| 12/30/1997 | US5703807 EEPROM with enhanced reliability by selectable VPP for write and erase |
| 12/29/1997 | EP0814484A1 Nonvolatile memory with a single-cell reference signal generating circuit for reading memory cells |
| 12/29/1997 | EP0814483A1 Read method and circuit for nonvolatile memory cells with an equalizing structure |
| 12/29/1997 | EP0814482A1 Method and circuit for generating a read reference signal for nonvolatile memory cells |
| 12/29/1997 | EP0814481A1 Low-supply-voltage nonvolatile memory device with voltage boosting |
| 12/29/1997 | EP0814480A1 Method and circuit for reading low-supply-voltage nonvolatile memory cells |
| 12/29/1997 | EP0814479A2 Semiconductor circuit having circuit supplying voltage higher than power supply voltage |
| 12/29/1997 | EP0813751A1 Series capacitor charge pump |
| 12/29/1997 | EP0813705A1 High precision voltage regulation circuit for programming multilevel flash memory |
| 12/24/1997 | WO1997049089A1 Nand flash memory using floating gate transistors as select gate devices and its bias scheme |
| 12/24/1997 | WO1997049088A1 Multi-level memory circuit with regulated writing voltage |
| 12/24/1997 | WO1997049087A1 Multi-level memory circuit with regulated reading voltage |
| 12/24/1997 | WO1997049086A1 Flash memory address decoder with novel latch |
| 12/24/1997 | WO1997049085A1 Fail-safe non-volatile memory programming system and method therefor |
| 12/24/1997 | CN1168539A Method of programming flash memory cell |
| 12/23/1997 | US5701274 Semiconductor device with selectable device information |
| 12/23/1997 | US5701272 Negative voltage switching circuit |
| 12/23/1997 | US5701265 Serial dichotomic method for sensing multiple-level non-volatile memory cells, and sensing circuit implementing such method |
| 12/18/1997 | WO1997048101A1 Floating gate memory device with low current page buffer |
| 12/18/1997 | WO1997048100A1 Electrically erasable and programmable non-volatile memory protected against power failure |
| 12/18/1997 | WO1997048099A1 A device and method for multi-level charge/storage and reading out |
| 12/18/1997 | WO1997048098A1 Page mode floating gate memory device storing multiple bits per cell |
| 12/17/1997 | EP0813290A2 Multi-stage voltage-boosting circuit with boosted back-gate bias |
| 12/17/1997 | EP0813209A2 Method for erasing non-volatile memory |
| 12/17/1997 | EP0813207A2 First read cycle circuit for semiconductor memory |
| 12/17/1997 | EP0813206A2 Self adjusting sense amplifier clock delay circuit |
| 12/17/1997 | CN1167988A Nonvolatile semiconductor memory |
| 12/16/1997 | US5699311 Semiconductor memory device |
| 12/16/1997 | US5699306 Row redundancy for nonvolatile semiconductor memories |
| 12/16/1997 | US5699298 Flash memory erase with controlled band-to-band tunneling current |
| 12/16/1997 | US5699297 Method of rewriting data in a microprocessor additionally provided with a flash memory |
| 12/16/1997 | US5699296 Threshold voltage verification circuit of a non-volatile memory cell and program and erasure verification method using the same |
| 12/16/1997 | US5699295 Current detection circuit for reading a memory in integrated circuit form |
| 12/11/1997 | WO1997047041A2 Programmable, non-volatile memory device, and method of manufacturing such a device |
| 12/11/1997 | DE19623145A1 Verfahren zum Betreiben eines Steuergerätes mit einer über eine Programmiervorrichtung programmierbaren Speichereinrichtung A method for operating a control unit with a programmable memory device via a programming device |
| 12/10/1997 | EP0811987A1 Circuit to produce high programming voltage |