| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 05/15/1997 | DE19646216A1 NAND-type EEPROM device |
| 05/13/1997 | US5630093 Disk emulation for a non-volatile semiconductor memory utilizing a mapping table |
| 05/13/1997 | US5629894 Memory module having read-modify-write function |
| 05/13/1997 | US5629893 System for constant field erasure in a flash EPROM |
| 05/13/1997 | US5629892 Flash EEPROM memory with separate reference array |
| 05/13/1997 | US5629890 Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method |
| 05/13/1997 | US5629611 Current generator circuit for generating substantially constant current |
| 05/13/1997 | US5629548 Semiconductor device with adjustable channel width |
| 05/09/1997 | WO1997016886A2 Control gate-addressed cmos non-volatile memory cell that programs through gates of cmos transistors |
| 05/09/1997 | WO1997016831A1 Program algorithm for low voltage single power supply flash memories |
| 05/09/1997 | WO1997016830A1 Temperature compensated reference for overerase correction circuitry in a flash memory |
| 05/07/1997 | EP0772358A1 Memory card apparatus |
| 05/07/1997 | EP0772200A1 Voltage generator for electrically programmable non-volatile memory cells |
| 05/07/1997 | EP0772129A2 Computer |
| 05/07/1997 | CN1149189A High-speed synchronous mask rom with pipeline structure |
| 05/07/1997 | CN1149183A Batch erasable nonvolatile memory apparatus and erasing method |
| 05/06/1997 | US5627790 Reading circuit for an integrated semiconductor memory device |
| 05/06/1997 | US5627784 Memory system having non-volatile data storage structure for memory control parameters and method |
| 05/06/1997 | US5627783 Semiconductor disk device |
| 05/06/1997 | US5627782 Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller |
| 05/06/1997 | US5627781 Nonvolatile semiconductor memory |
| 05/06/1997 | US5627779 Non-volatile semiconductor memory having an array of non-volatile memory cells and method for driving the same |
| 05/06/1997 | US5627484 CMOS sense amplifier |
| 05/02/1997 | EP0443610B1 Nonvolatile semiconductor memory device |
| 05/01/1997 | WO1997015954A1 Second-layer phase change memory array on top of a logic device |
| 05/01/1997 | WO1997015929A1 Semiconductor non-volatile memory device having a nand cell structure |
| 05/01/1997 | WO1997015928A1 Overerase correction for flash memory which limits overerase and prevents erase verify errors |
| 04/29/1997 | US5625600 Flash memory array with self-limiting erase |
| 04/29/1997 | US5625591 Non-volatile semiconductor memory device |
| 04/29/1997 | US5625590 Nonvolatile semiconductor memory |
| 04/29/1997 | US5625586 Semiconductor memory having a plurality of memory banks and sub-bit lines which are connected to a main bit line via MOS transistors whose gates are commonly connected to a selection line |
| 04/27/1997 | CA2188828A1 Computer with improved memory and controller |
| 04/24/1997 | WO1997015054A2 A flash eeprom memory with separate reference array |
| 04/24/1997 | WO1997015027A1 An identifier token with electronic circuitry and conductor means in the token external to the circuitry for realizing an identifier code |
| 04/22/1997 | US5623686 Non-volatile memory control and data loading architecture for multiple chip processor |
| 04/22/1997 | US5623640 Data memory system that exchanges data in data locations with other data locations based on the number of writes to the memory |
| 04/22/1997 | US5623620 Special test modes for a page buffer shared resource in a memory device |
| 04/22/1997 | US5623445 Semiconductor memory device having data erasing mechanism |
| 04/22/1997 | US5623444 Electrically-erasable ROM with pulse-driven memory cell transistors |
| 04/22/1997 | US5623443 Scalable EPROM array with thick and thin non-field oxide gate insulators |
| 04/22/1997 | US5623442 Memory cells and memory devices with a storage capacitor of parasitic capacitance and information storing method using the same |
| 04/22/1997 | US5622879 Methods for fabricating and operating electrically erasable and programmable integrated circuit memory |
| 04/17/1997 | WO1997014152A1 Storage cell for analog recording and playback |
| 04/17/1997 | WO1997011465A3 Sram storage cell |
| 04/17/1997 | DE19641420A1 Threshold voltage adjusting circuit |
| 04/16/1997 | EP0768673A2 Improvements in or relating to integrated circuits |
| 04/15/1997 | US5621738 Method for programming flash EEPROM devices |
| 04/15/1997 | US5621697 High density integrated circuit with bank select structure |
| 04/15/1997 | US5621690 Nonvolatile memory blocking architecture and redundancy |
| 04/15/1997 | US5621689 Nonvolatile semiconductor memory device having controlled charge pump load |
| 04/15/1997 | US5621687 Programmable erasure and programming time for a flash memory |
| 04/15/1997 | US5621686 Multiply and divide current mirror |
| 04/15/1997 | US5621685 Programmable power generation circuit for flash EEPROM memory systems |
| 04/15/1997 | US5621684 Nonvolatile semiconductor member with different pass potential applied to the first two adjacent word |
| 04/15/1997 | US5621683 Semiconductor memory with non-volatile memory transistor |
| 04/15/1997 | US5621682 Memory system |
| 04/10/1997 | WO1997013250A1 Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell |
| 04/10/1997 | DE19601369C1 Voltage multiplier or providing negative high voltage |
| 04/10/1997 | DE19542029C1 Verfahren zum selbsttätigen Ermitteln der nötigen Hochspannung zum Programmieren/Löschen eines EEPROMs A method of automatically determining the necessary high voltage for programming / erasing of an EEPROM |
| 04/09/1997 | CN1147314A Low voltage one transistor flash EEPROM cell using Fowler-Nordheim Programming and erase |
| 04/09/1997 | CN1147166A Sense amplifier for semiconductor memory device |
| 04/08/1997 | US5619454 Programming method for healing over-erased cells for a flash memory device |
| 04/08/1997 | US5619453 Memory system having programmable flow control register |
| 04/08/1997 | US5619452 Semiconductor disk device with a constant data-writing time period |
| 04/08/1997 | US5619451 Method for the erasure of a memory, and circuits for the implementation thereof |
| 04/08/1997 | US5619450 Drive circuit for flash memory with improved erasability |
| 04/08/1997 | US5619449 Bit line sensing in a memory array |
| 04/08/1997 | US5619149 Single ended dynamic sense amplifier |
| 04/08/1997 | US5618742 Method of making flash EPROM with conductive sidewall spacer contacting floating gate |
| 04/03/1997 | WO1997012444A1 Programmable logic device with configurable power supply |
| 04/03/1997 | WO1997012369A1 Variable stage charge pump |
| 04/03/1997 | WO1997012368A1 Multiple writes per a single erase for a nonvolatile memory |
| 04/03/1997 | WO1997012367A1 Multiple writes per a single erase for a nonvolatile memory |
| 04/03/1997 | WO1997012325A1 Memory systems |
| 04/03/1997 | WO1996018194A3 Semiconductor memory with non-volatile memory transistor |
| 04/02/1997 | EP0766256A1 Voltage regulator for semiconductor non-volatile electrically programmable memory devices |
| 04/02/1997 | EP0766255A1 Parallel programming method of memory words and corresponding circuit |
| 04/01/1997 | US5617361 Non-volatile semiconductor memory device |
| 04/01/1997 | US5617359 Semiconductor memory device |
| 04/01/1997 | US5617358 Nonvolatile semiconductor memory device capable of converging threshold voltage with low power supply voltage |
| 04/01/1997 | US5617357 Flash EEPROM memory with improved discharge speed using substrate bias and method therefor |
| 04/01/1997 | US5617356 Regulation circuit and method for the erasing phase of non-volatile memory cells |
| 04/01/1997 | US5617355 Semiconductor memory device having positive feedback sense amplifier |
| 04/01/1997 | US5617354 Sensing circuit to enhance sensing margin |
| 04/01/1997 | US5617353 Nonvolatile semiconductor memory device |
| 04/01/1997 | US5617350 Flash memory system having reduced disturb and method |
| 04/01/1997 | US5616510 Method for making multimedia storage system with highly compact memory cells |
| 03/27/1997 | WO1997011465A2 Sram storage cell |
| 03/27/1997 | DE19535106A1 SRAM-Speicherzelle SRAM memory cell |
| 03/26/1997 | EP0764953A2 Improvements in or relating to integrated circuit memory arrays |
| 03/26/1997 | EP0764330A1 Eeprom array with flash-like core |
| 03/26/1997 | EP0764329A1 A method for programming an amg eprom or flash memory when cells of the array are formed to store multiple bits of data |
| 03/26/1997 | EP0764328A1 A method for programming a single eprom or flash memory cell to store multiple levels of data that utilizes a forward-biased source-to-substrate junction |
| 03/26/1997 | CN1146053A Non-volatile semiconductor memory |
| 03/26/1997 | CN1146052A Method for programming nonvolatile memory |
| 03/25/1997 | US5615166 Semiconductor memory integrated circuit |
| 03/25/1997 | US5615165 Non-volatile semiconductor memory device and memory system using the same |
| 03/25/1997 | US5615163 Semiconductor memory device |
| 03/25/1997 | US5615159 Memory system with non-volatile data storage unit and method of initializing same |
| 03/25/1997 | US5615154 Flash memory device having erase verification |