| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 01/15/2004 | WO2003009299A3 Writing apparatus, semiconductor memory card, writing proguram, and writing method |
| 01/15/2004 | WO2002086719A3 Improved error correction scheme for use in flash memory allowing bit alterability |
| 01/15/2004 | US20040008567 Threshold voltage adjustment method of non-volatile semiconductor memory device and non-volatile semiconductor memory device |
| 01/15/2004 | US20040008561 Stacked gate flash memory cell with reduced distrub conditions |
| 01/15/2004 | US20040008554 Non-volatile semiconductor memory device |
| 01/15/2004 | US20040008551 Non-volatile semiconductor memory device |
| 01/15/2004 | US20040008549 Self-repair method for nonvolatile memory devices with erasing/programming failure, and relative nonvolatile memory device |
| 01/15/2004 | US20040008546 Circuit and method for tuning a reference bit line loading to a sense amplifier by optionally cutting a capacitive reference bit line |
| 01/15/2004 | US20040008543 Semiconductor memory device |
| 01/15/2004 | US20040008541 Multiple use memory chip |
| 01/15/2004 | US20040008540 Non-volatile semiconductor memory device configured to reduce rate of erroneously reading data from memory cell |
| 01/15/2004 | US20040008078 Boosting circuit |
| 01/15/2004 | US20040007734 Nonvolatile semiconductor memory device |
| 01/15/2004 | US20040007732 Compact nonvolatile memory using substrate hot carrier injection |
| 01/15/2004 | US20040007718 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
| 01/15/2004 | US20040007717 Memory device having a transistor and one resistant element as a storing means and method for driving the memory device |
| 01/15/2004 | DE10227997A1 Programmierverfahren für eine EEPROM-Speichereinrichtung und Informationsquelle A programming method for an EEPROM memory means and information source |
| 01/15/2004 | DE10227255A1 Verfahren zur Wiederherstellung von Verwaltungsdatensätzen eines blockweise löschbaren Speichers Process for the recovery of administrative records of a block-erasable memory |
| 01/15/2004 | CA2491228A1 Method of programming a multi-level memory device |
| 01/14/2004 | EP1381159A2 Time limit function utilization apparatus |
| 01/14/2004 | EP1381057A1 Line selector for a matrix of memory elements |
| 01/14/2004 | EP1381056A2 System and method for implementing a counter |
| 01/14/2004 | EP1381055A2 A multiple use memory chip |
| 01/14/2004 | EP1381054A1 Organic memory device |
| 01/14/2004 | CN1468437A Method and apparatus for boosting bitlines for low vcc read |
| 01/14/2004 | CN1468435A Flash memory architecture employing three layer metal interconnect |
| 01/14/2004 | CN1467851A Nonvolatile semiconductor memory device |
| 01/14/2004 | CN1467847A Memory device and method for driving the memory device |
| 01/14/2004 | CN1467752A Nonvolatile semiconductor memory device and data write method thereof |
| 01/14/2004 | CN1467751A Flash memory and program planning thereof and method for repetitive recording |
| 01/14/2004 | CN1134789C Flash EEPROM cell, method of manufacturing the same, method of programming and method of reading the same |
| 01/13/2004 | US6678823 Methods and apparatus for authenticating data stored in semiconductor memory cells |
| 01/13/2004 | US6678785 Flash management system using only sequential write |
| 01/13/2004 | US6678192 Error management for writable tracking storage units |
| 01/13/2004 | US6678191 Semiconductor memory device having memory cell arrays capable of accomplishing random access |
| 01/13/2004 | US6678190 Single poly embedded eprom |
| 01/13/2004 | US6677804 Dual bandgap voltage reference system and method for reducing current consumption during a standby mode of operation and for providing reference stability during an active mode of operation |
| 01/13/2004 | US6677801 Internal power voltage generating circuit of semiconductor device |
| 01/13/2004 | US6677782 Semiconductor integrated circuit and semiconductor logic circuit used in the integrated circuit |
| 01/13/2004 | US6677204 Multigate semiconductor device with vertical channel current and method of fabrication |
| 01/08/2004 | WO2004003928A2 Backup power supply for flash memory |
| 01/08/2004 | WO2004003927A1 Method to write in a non volatile memory and system to implement such method |
| 01/08/2004 | WO2004002745A1 Ink jet printhead chip with predetermined micro-electromechanical systems height |
| 01/08/2004 | WO2003060922A3 Method for monitoring the availability of at least one memory element that is assigned to an electronic unit |
| 01/08/2004 | US20040006404 Permanent chip ID using FeRAM |
| 01/08/2004 | US20040005052 Semiconductor device, terminal device and communication method |
| 01/08/2004 | US20040004896 Dynamic input thresholds for semiconductor devices |
| 01/08/2004 | US20040004894 Semiconductor integrated circuit and nonvolatile memory element |
| 01/08/2004 | US20040004879 Semiconductor integrated circuit device |
| 01/08/2004 | US20040004874 Circuit for generating trim bit signal in a flash memory device |
| 01/08/2004 | US20040004868 Sense amplifier |
| 01/08/2004 | US20040004863 Nonvolatile electrically alterable memory device and array made thereby |
| 01/08/2004 | US20040004862 Semiconductor memory device |
| 01/08/2004 | US20040004861 Differential EEPROM using pFET floating gate transistors |
| 01/08/2004 | US20040004859 Memory utilizing oxide nanolaminates |
| 01/08/2004 | US20040004858 Rewrite disable control method for determining rewrite enable/disable based on result of majority decision |
| 01/08/2004 | US20040004857 Method of programming a multi-level memory device |
| 01/08/2004 | US20040004800 Eeprom circuit voltage reference circuit and method for providing a low temperature-coefficient voltage reference |
| 01/08/2004 | US20040004247 Memory utilizing oxide-nitride nanolaminates |
| 01/08/2004 | US20040004245 Memory utilizing oxide-conductor nanolaminates |
| 01/08/2004 | US20040004129 Identifying card |
| 01/08/2004 | DE10323400A1 Löschschema für eine Flashspeicherzelle unter Verwendung sowohl des Source- als auch des Kanalbereichs Erase scheme for a flash memory cell using both the source and the channel region |
| 01/08/2004 | DE10245769A1 Nichtflüchtige Speicherzelle mit Ladungseinfangstruktur, Speicherbauelement und Herstellungsverfahren A non-volatile memory cell having charge trapping memory device and manufacturing method |
| 01/08/2004 | DE10224956A1 Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung Method for adjusting the threshold voltage of a Feldeffekttansistors, field effect transistor and integrated circuit |
| 01/07/2004 | EP1378944A1 Nonvolatile memory array structure and its operating method |
| 01/07/2004 | EP1378915A2 System and method for programming nonvolatile memory |
| 01/07/2004 | EP1378914A2 Semiconductor memory device |
| 01/07/2004 | EP1378913A1 Voltage booster device and memory system |
| 01/07/2004 | EP1378836A2 Memory data protection system |
| 01/07/2004 | CN1466765A Writable tracking cells |
| 01/07/2004 | CN1466762A Synchronous flash memory with status burst output |
| 01/07/2004 | CN1466221A Non-volatile memory cell and fabrication method thereof |
| 01/07/2004 | CN1466152A Method for effectively utilizing memory in site programmable gate array |
| 01/07/2004 | CN1466151A NOR structure semiconductor memory |
| 01/07/2004 | CN1466150A Paging buffer for flash memory |
| 01/07/2004 | CN1134020C Semiconductor memory with non-volatile dual transistor memory cells |
| 01/07/2004 | CN1134019C Electrically programmable memory, method of programming and reading method |
| 01/07/2004 | CN1133914C Resetting method of system |
| 01/06/2004 | US6675281 Distributed mapping scheme for mass storage system |
| 01/06/2004 | US6675255 Device initialize command for a synchronous memory |
| 01/06/2004 | US6674669 Nonvolatile memory structures and access methods |
| 01/06/2004 | US6674668 Read circuit on nonvolatile semiconductor memory |
| 01/06/2004 | US6674667 Programmable fuse and antifuse and method therefor |
| 01/06/2004 | US6674666 Device and method for timing the reading of a nonvolatile memory with reduced switching noise |
| 01/06/2004 | US6674665 SONOS latch and application |
| 01/06/2004 | US6674318 Semiconductor integrated circuit |
| 01/06/2004 | US6674133 Twin bit cell flash memory device |
| 01/06/2004 | US6674122 Semiconductor integrated circuit |
| 01/06/2004 | US6674120 Nonvolatile semiconductor memory device and method of operation thereof |
| 01/06/2004 | US6674117 Semiconductor element and semiconductor memory device using the same |
| 01/06/2004 | US6673700 Reduced area intersection between electrode and programming element |
| 01/06/2004 | US6673648 Isolating phase change material memory cells |
| 01/02/2004 | EP1376676A2 Multibit non-volatile memory device and method |
| 01/02/2004 | EP1376608A1 Programming method in a nonvolatile memory and system for realisation of such a method |
| 01/02/2004 | EP1376604A1 Memory structures |
| 01/02/2004 | EP1376598A1 Memory cell and memory device |
| 01/02/2004 | EP1376595A2 Recording medium, and recording apparatus, reproducing apparatus, recording method and control method thereof |
| 01/02/2004 | EP1374308A2 Memory cell array with individually addressable memory cells and method for the production thereof |
| 01/02/2004 | EP1374249A1 Device and method for partial read-protection of a non-volatile storage |
| 01/02/2004 | EP1374243A2 System and method for achieving fast switching of analog voltages on a large capacitive load |