Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
04/2004
04/01/2004US20040062099 Fail number detecting circuit of flash memory
04/01/2004US20040062098 Non-volatile memory device with erase address register
04/01/2004US20040062085 Voltage generation circuitry having temperature compensation
04/01/2004US20040062082 Non-volatile memory device with erase address register
04/01/2004US20040062080 Nonvolatile semiconductor memory device with MONOS type memory cell
04/01/2004US20040062079 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
04/01/2004US20040062078 Nonvolatile semiconductor memory device supplying proper program potential
04/01/2004US20040062077 Nonvolatile semiconductor memory
04/01/2004US20040062072 Nonvolatile semiconductor memory capable of generating read-mode reference current and verify-mode reference current from the same reference cell
04/01/2004US20040061549 Potential detector and semiconductor integrated circuit
04/01/2004US20040061518 Time limit function utilization
04/01/2004US20040061139 Voltage generation circuit for non-volatile semiconductor memory device
04/01/2004DE69909926T2 Nichtflüchtige Speicheranordnung und Verfahren zu ihrer Prüfung A nonvolatile memory device and method for its examination
04/01/2004CA2499277A1 High speed zero dc power programmable logic device (pld) architecture
03/2004
03/31/2004EP1403879A1 Method for replacing failed non-volatile memory cells and corresponding memory device
03/31/2004EP1403878A2 Flash eprom intergrated circuit architecture
03/31/2004EP1403877A1 Nonvolatile semiconductor memory
03/31/2004EP1403771A1 Non-volatile memory control method
03/31/2004EP1402536A1 Charge coupled eeprom device and corresponding method of operation
03/31/2004EP1402535A1 Accurate verify apparatus and method for nor flash memory cells in the presence of high column leakage
03/31/2004EP1402534A1 Method for programming/parallel programming of onboard flash memory by multiple access bus
03/31/2004EP1402382A2 Data processing method
03/31/2004EP1012846B1 Channel fn program/erase recovery scheme
03/31/2004EP0846343B1 Electrically erasable memory elements characterized by reduced current and improved thermal stability
03/31/2004CN1485917A 半导体集成电路 The semiconductor integrated circuit
03/31/2004CN1485916A Chip possessing programmable and no-volatile memory of system and off-system
03/31/2004CN1485860A Non-volatility memory access system and its cycling usage method of access space
03/31/2004CN1485857A Prevention method of encrypted integrated circuit against electrical source attack
03/31/2004CN1144294C Semiconductor memory device
03/31/2004CN1144233C Method for testing electronic element
03/31/2004CN1144226C Readout amplifier circuit
03/30/2004US6714954 Methods of factoring and modular arithmetic
03/30/2004US6714459 Nonvolatile semiconductor memory device and method of detecting overerased cell
03/30/2004US6714458 High voltage positive and negative two-phase discharge system and method for channel erase in flash memory devices
03/30/2004US6714457 Parallel channel programming scheme for MLC flash memory
03/30/2004US6714456 Process for making and programming and operating a dual-bit multi-level ballistic flash memory
03/30/2004US6714454 Method of operation of a dual-bit double-polysilicon source-side injection flash EEPROM cell
03/30/2004US6714453 Flash memory including means of checking memory cell threshold voltages
03/30/2004US6714452 Non-volatile semiconductor memory device and semiconductor disk device
03/30/2004US6714451 Semiconductor memory device including bit select circuit
03/30/2004US6714450 Word programmable EEPROM memory comprising column selection latches with two functions
03/30/2004US6714449 Sense amplifier suitable for analogue voltage levels
03/30/2004US6714448 Method of programming a multi-level memory device
03/30/2004US6714447 Semiconductor device and a integrated circuit card
03/30/2004US6713996 Ultra low power tracked low voltage reference source
03/30/2004US6713809 Dual bit memory device with isolated polysilicon floating gates
03/30/2004US6713778 Register setting method and semiconductor device
03/25/2004WO2004025662A1 Method of apparatus for preventing overtunneling in pfet-based nonvolatile memory cells
03/25/2004WO2004025660A1 Memory cell
03/25/2004WO2004025659A1 Programming a phase-change material memory
03/25/2004WO2004025389A2 Dac-based voltage regulator for flash memory array
03/25/2004WO2003100841A3 Method for the production of a memory cell, memory cell and memory cell arrangement
03/25/2004WO2003075140A3 Product and method for preventing incorrect storage of data
03/25/2004WO2002078008A3 Independent asynchronous boot block for synchronous non-volatile memory devices
03/25/2004US20040060031 Highly compact non-volatile memory and method thereof
03/25/2004US20040059883 Memory data protection system
03/25/2004US20040057327 Semiconductor memory device
03/25/2004US20040057326 Read circuit of nonvolatile semiconductor memory
03/25/2004US20040057323 Organic thin-film switching memory device and memory device
03/25/2004US20040057320 Top/bottom symmetrical protection scheme for flash
03/25/2004US20040057318 Non-volatile memory and method with reduced bit line crosstalk errors
03/25/2004US20040057316 Nonvolatile memory
03/25/2004US20040057310 Non-volatile semiconductor memory
03/25/2004US20040057306 Non-volatile memory device with erase address register
03/25/2004US20040057299 Memory card having a buffer memory for storing testing instruction
03/25/2004US20040057297 Multiple chip system including a plurality of non-volatile semiconductor memory devices
03/25/2004US20040057291 Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, useful in low supply-voltage technologies
03/25/2004US20040057288 Control method of non-volatile semiconductor memory cell and non-volatile semiconductor memory device
03/25/2004US20040057287 Non-volatile memory and method with reduced source line bias errors
03/25/2004US20040057286 Self-aligned split-gate NAND flash memory and fabrication process
03/25/2004US20040057285 Non-volatile memory and method with reduced neighboring field errors
03/25/2004US20040057284 DDR synchronous flash memory with virtual segment architecture
03/25/2004US20040057283 Highly compact non-volatile memory and method therefor with internal serial buses
03/25/2004US20040057282 Highly compact non-volatile memory and method therefor with space-efficient data registers
03/25/2004US20040057281 Thin film magnetic memory device storing program information efficiently and stably
03/25/2004US20040057266 Semiconductor memory device, electronic card and electronic device
03/25/2004US20040057265 Method of controlling an electronic non-volatile memory and associated device
03/25/2004US20040057264 Multibit non-volatile memory and method
03/25/2004US20040057180 Method of data storage using only amorphous phase of electrically programmable phase-change memory element
03/25/2004US20040056679 High speed zero DC power programmable logic device (PLD) architecture
03/25/2004DE69627595T2 Halbleiterspeicher und Verfahren zum Ersetzen einer redundanten Speicherzelle A semiconductor memory and method for replacing a redundant memory cell
03/25/2004DE69626792T2 Elektrische löschbare und programmierbare nichtflüchtige Speicheranordnung mit prüfbaren Redundanzschaltungen Electrical erasable and programmable nonvolatile memory device with redundancy testable circuits
03/25/2004DE10332590A1 Zeilendecodierer in einem Flashspeicher sowie Löschverfahren für eine Flashspeiicherzelle in diesem Row decoder in a flash memory and an erasing method for Flashspeiicherzelle in this
03/25/2004CA2497616A1 Dac-based voltage regulator for flash memory array
03/24/2004EP1400980A1 A circuit for biasing an input node of a sense amplifier with a pre-charging stage
03/24/2004EP1399973A2 Transistor-arrangement, method for operating a transistor-arrangement as a data storage element and method for producing a transistor-arrangement
03/24/2004EP1399924A2 Method and apparatus for boosting bitlines for low vcc read
03/24/2004EP1399819A2 Improved error correction scheme for use in flash memory allowing bit alterability
03/24/2004EP1399797A2 Control unit
03/24/2004EP1290559B1 Dual-ported cams for a simultaneous operation flash memory
03/24/2004CN1484309A Time limit function utrlization and semiconductor IC
03/24/2004CN1484301A Method for erasing non-volatile memory
03/24/2004CN1484251A Simutaneously read/write flash memory device having separately read/write logic row decoder circuitry
03/24/2004CN1484250A Flash memory device with stable source line regardless of bit line coupling and loading effect
03/24/2004CN1484249A Nonvolatile semiconductor storage apparatus
03/24/2004CN1484248A Reading circuit and semiconductor memory device including same
03/24/2004CN1484247A Nonvolatile semiconductor storage equipment providing suitable programming voltage
03/24/2004CN1143313C Flash memory array
03/24/2004CN1143218C Recording device, recording method, reproducing device and reproducting method
03/24/2004CN1143171C Semiconductor display device correcting system and correcting method, electronics device having active matrix display screen