Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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04/01/2004 | US20040062099 Fail number detecting circuit of flash memory |
04/01/2004 | US20040062098 Non-volatile memory device with erase address register |
04/01/2004 | US20040062085 Voltage generation circuitry having temperature compensation |
04/01/2004 | US20040062082 Non-volatile memory device with erase address register |
04/01/2004 | US20040062080 Nonvolatile semiconductor memory device with MONOS type memory cell |
04/01/2004 | US20040062079 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line |
04/01/2004 | US20040062078 Nonvolatile semiconductor memory device supplying proper program potential |
04/01/2004 | US20040062077 Nonvolatile semiconductor memory |
04/01/2004 | US20040062072 Nonvolatile semiconductor memory capable of generating read-mode reference current and verify-mode reference current from the same reference cell |
04/01/2004 | US20040061549 Potential detector and semiconductor integrated circuit |
04/01/2004 | US20040061518 Time limit function utilization |
04/01/2004 | US20040061139 Voltage generation circuit for non-volatile semiconductor memory device |
04/01/2004 | DE69909926T2 Nichtflüchtige Speicheranordnung und Verfahren zu ihrer Prüfung A nonvolatile memory device and method for its examination |
04/01/2004 | CA2499277A1 High speed zero dc power programmable logic device (pld) architecture |
03/31/2004 | EP1403879A1 Method for replacing failed non-volatile memory cells and corresponding memory device |
03/31/2004 | EP1403878A2 Flash eprom intergrated circuit architecture |
03/31/2004 | EP1403877A1 Nonvolatile semiconductor memory |
03/31/2004 | EP1403771A1 Non-volatile memory control method |
03/31/2004 | EP1402536A1 Charge coupled eeprom device and corresponding method of operation |
03/31/2004 | EP1402535A1 Accurate verify apparatus and method for nor flash memory cells in the presence of high column leakage |
03/31/2004 | EP1402534A1 Method for programming/parallel programming of onboard flash memory by multiple access bus |
03/31/2004 | EP1402382A2 Data processing method |
03/31/2004 | EP1012846B1 Channel fn program/erase recovery scheme |
03/31/2004 | EP0846343B1 Electrically erasable memory elements characterized by reduced current and improved thermal stability |
03/31/2004 | CN1485917A 半导体集成电路 The semiconductor integrated circuit |
03/31/2004 | CN1485916A Chip possessing programmable and no-volatile memory of system and off-system |
03/31/2004 | CN1485860A Non-volatility memory access system and its cycling usage method of access space |
03/31/2004 | CN1485857A Prevention method of encrypted integrated circuit against electrical source attack |
03/31/2004 | CN1144294C Semiconductor memory device |
03/31/2004 | CN1144233C Method for testing electronic element |
03/31/2004 | CN1144226C Readout amplifier circuit |
03/30/2004 | US6714954 Methods of factoring and modular arithmetic |
03/30/2004 | US6714459 Nonvolatile semiconductor memory device and method of detecting overerased cell |
03/30/2004 | US6714458 High voltage positive and negative two-phase discharge system and method for channel erase in flash memory devices |
03/30/2004 | US6714457 Parallel channel programming scheme for MLC flash memory |
03/30/2004 | US6714456 Process for making and programming and operating a dual-bit multi-level ballistic flash memory |
03/30/2004 | US6714454 Method of operation of a dual-bit double-polysilicon source-side injection flash EEPROM cell |
03/30/2004 | US6714453 Flash memory including means of checking memory cell threshold voltages |
03/30/2004 | US6714452 Non-volatile semiconductor memory device and semiconductor disk device |
03/30/2004 | US6714451 Semiconductor memory device including bit select circuit |
03/30/2004 | US6714450 Word programmable EEPROM memory comprising column selection latches with two functions |
03/30/2004 | US6714449 Sense amplifier suitable for analogue voltage levels |
03/30/2004 | US6714448 Method of programming a multi-level memory device |
03/30/2004 | US6714447 Semiconductor device and a integrated circuit card |
03/30/2004 | US6713996 Ultra low power tracked low voltage reference source |
03/30/2004 | US6713809 Dual bit memory device with isolated polysilicon floating gates |
03/30/2004 | US6713778 Register setting method and semiconductor device |
03/25/2004 | WO2004025662A1 Method of apparatus for preventing overtunneling in pfet-based nonvolatile memory cells |
03/25/2004 | WO2004025660A1 Memory cell |
03/25/2004 | WO2004025659A1 Programming a phase-change material memory |
03/25/2004 | WO2004025389A2 Dac-based voltage regulator for flash memory array |
03/25/2004 | WO2003100841A3 Method for the production of a memory cell, memory cell and memory cell arrangement |
03/25/2004 | WO2003075140A3 Product and method for preventing incorrect storage of data |
03/25/2004 | WO2002078008A3 Independent asynchronous boot block for synchronous non-volatile memory devices |
03/25/2004 | US20040060031 Highly compact non-volatile memory and method thereof |
03/25/2004 | US20040059883 Memory data protection system |
03/25/2004 | US20040057327 Semiconductor memory device |
03/25/2004 | US20040057326 Read circuit of nonvolatile semiconductor memory |
03/25/2004 | US20040057323 Organic thin-film switching memory device and memory device |
03/25/2004 | US20040057320 Top/bottom symmetrical protection scheme for flash |
03/25/2004 | US20040057318 Non-volatile memory and method with reduced bit line crosstalk errors |
03/25/2004 | US20040057316 Nonvolatile memory |
03/25/2004 | US20040057310 Non-volatile semiconductor memory |
03/25/2004 | US20040057306 Non-volatile memory device with erase address register |
03/25/2004 | US20040057299 Memory card having a buffer memory for storing testing instruction |
03/25/2004 | US20040057297 Multiple chip system including a plurality of non-volatile semiconductor memory devices |
03/25/2004 | US20040057291 Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, useful in low supply-voltage technologies |
03/25/2004 | US20040057288 Control method of non-volatile semiconductor memory cell and non-volatile semiconductor memory device |
03/25/2004 | US20040057287 Non-volatile memory and method with reduced source line bias errors |
03/25/2004 | US20040057286 Self-aligned split-gate NAND flash memory and fabrication process |
03/25/2004 | US20040057285 Non-volatile memory and method with reduced neighboring field errors |
03/25/2004 | US20040057284 DDR synchronous flash memory with virtual segment architecture |
03/25/2004 | US20040057283 Highly compact non-volatile memory and method therefor with internal serial buses |
03/25/2004 | US20040057282 Highly compact non-volatile memory and method therefor with space-efficient data registers |
03/25/2004 | US20040057281 Thin film magnetic memory device storing program information efficiently and stably |
03/25/2004 | US20040057266 Semiconductor memory device, electronic card and electronic device |
03/25/2004 | US20040057265 Method of controlling an electronic non-volatile memory and associated device |
03/25/2004 | US20040057264 Multibit non-volatile memory and method |
03/25/2004 | US20040057180 Method of data storage using only amorphous phase of electrically programmable phase-change memory element |
03/25/2004 | US20040056679 High speed zero DC power programmable logic device (PLD) architecture |
03/25/2004 | DE69627595T2 Halbleiterspeicher und Verfahren zum Ersetzen einer redundanten Speicherzelle A semiconductor memory and method for replacing a redundant memory cell |
03/25/2004 | DE69626792T2 Elektrische löschbare und programmierbare nichtflüchtige Speicheranordnung mit prüfbaren Redundanzschaltungen Electrical erasable and programmable nonvolatile memory device with redundancy testable circuits |
03/25/2004 | DE10332590A1 Zeilendecodierer in einem Flashspeicher sowie Löschverfahren für eine Flashspeiicherzelle in diesem Row decoder in a flash memory and an erasing method for Flashspeiicherzelle in this |
03/25/2004 | CA2497616A1 Dac-based voltage regulator for flash memory array |
03/24/2004 | EP1400980A1 A circuit for biasing an input node of a sense amplifier with a pre-charging stage |
03/24/2004 | EP1399973A2 Transistor-arrangement, method for operating a transistor-arrangement as a data storage element and method for producing a transistor-arrangement |
03/24/2004 | EP1399924A2 Method and apparatus for boosting bitlines for low vcc read |
03/24/2004 | EP1399819A2 Improved error correction scheme for use in flash memory allowing bit alterability |
03/24/2004 | EP1399797A2 Control unit |
03/24/2004 | EP1290559B1 Dual-ported cams for a simultaneous operation flash memory |
03/24/2004 | CN1484309A Time limit function utrlization and semiconductor IC |
03/24/2004 | CN1484301A Method for erasing non-volatile memory |
03/24/2004 | CN1484251A Simutaneously read/write flash memory device having separately read/write logic row decoder circuitry |
03/24/2004 | CN1484250A Flash memory device with stable source line regardless of bit line coupling and loading effect |
03/24/2004 | CN1484249A Nonvolatile semiconductor storage apparatus |
03/24/2004 | CN1484248A Reading circuit and semiconductor memory device including same |
03/24/2004 | CN1484247A Nonvolatile semiconductor storage equipment providing suitable programming voltage |
03/24/2004 | CN1143313C Flash memory array |
03/24/2004 | CN1143218C Recording device, recording method, reproducing device and reproducting method |
03/24/2004 | CN1143171C Semiconductor display device correcting system and correcting method, electronics device having active matrix display screen |