Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2004
03/11/2004US20040047182 Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
03/11/2004US20040047181 Write state machine architecture for flash memory internal instructions
03/11/2004US20040046681 Dac-based voltage regulator for flash memory array
03/11/2004US20040046212 Semiconductor memory capable of being driven at low voltage and its manufacture method
03/11/2004DE10338273A1 Halbleiterspeicherbauelement und Zugriffsverfahren hierfür The semiconductor memory device and access method thereof
03/11/2004DE10238784A1 Nichtflüchtiges Halbleiterspeicherelement sowie zugehöriges Herstellungs- und Ansteuerverfahren Nonvolatile semiconductor memory device and associated manufacturing and driving
03/10/2004EP1396862A1 Non-volatile semiconductor memory device and rewriting method
03/10/2004EP1395992A2 Flash memory device with increase of efficiency during an apde (automatic program disturb after erase) process
03/10/2004CN1481034A Organic film switching memory and memory appliance
03/10/2004CN1480951A Power supply device capable of lowering power consumption
03/10/2004CN1480950A Flash memory device capable of using in instant multiplex and copying data quickly
03/10/2004CN1480735A Circuit for detecting low power of supplied voltage
03/09/2004US6704239 Non-volatile semiconductor memory device
03/09/2004US6704233 Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, useful in low supply-voltage technologies
03/09/2004US6704225 Sensing circuit for nonvolatile memory device
03/09/2004US6704224 Non-volatile semiconductor memory apparatus
03/09/2004US6704223 Non-volatile semiconductor memory
03/09/2004US6704222 Multi-state operation of dual floating gate array
03/09/2004US6704221 Floating gate programmable cell array for standard CMOS
03/09/2004US6704217 Symmetric segmented memory array architecture
03/09/2004US6703939 System and method for detecting motion of a body
03/09/2004US6703669 Semiconductor device having serially connected memory cell transistors provided between two current terminals
03/09/2004US6703661 Contactless NOR-type memory array and its fabrication methods
03/09/2004US6703275 Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell
03/04/2004WO2004019341A1 Column-decoding and precharging in a flash memory device
03/04/2004WO2003054965A3 Non-volatile memory and method of forming thereof
03/04/2004WO2003036650A3 Method for erasing a memory cell
03/04/2004US20040044927 Programmable device and method of programming
03/04/2004US20040042331 Semiconductor memory device with test mode
03/04/2004US20040042324 Flash memory for reducing peak current
03/04/2004US20040042319 Semiconductor memory device informing internal voltage level using ready/busy pin
03/04/2004US20040042314 Semiconductor memory device
03/04/2004US20040042298 Phase changeable memory devices having reduced cell areas
03/04/2004US20040042295 Nonvolatile semiconductor memory device and its manufacturing method
03/04/2004US20040042294 Novel Multi-state memory
03/04/2004US20040042284 Flash memory for improving write access time
03/04/2004US20040042281 Semiconductor memory device
03/04/2004US20040042280 Nonvolatile semiconductor memory device, nonvolatile semiconductor memory device-integrated system, and defective block detecting method
03/04/2004US20040042272 Novolatile semiconductor memory having multilayer gate structure
03/04/2004US20040042271 Method and apparatus for erasing memory
03/04/2004US20040042270 Programming a flash memory cell
03/04/2004US20040042269 Nonvolatile memory apparatus
03/04/2004US20040042268 One-device non-volatile random access memory cell
03/04/2004US20040042267 Method for reducing drain disturb in programming
03/04/2004US20040042265 Method and apparatus for controlling metal doping of a chalcogenide memory element
03/04/2004US20040042259 Single polarity programming of a pcram structure
03/04/2004US20040042244 Non-volatile semiconductor memory device for connecting to serial advanced technology attachment cable
03/04/2004US20040041214 One F2 memory cell, memory array, related devices and methods
03/04/2004US20040041209 Semiconductor element and semiconductor memory device using the same
03/04/2004US20040041203 Non-volatile semiconductor memory device and fabricating method thereof
03/04/2004US20040041200 High density flash memory architecture with columnar substrate coding
03/04/2004US20040041199 Non-volatile memory transistor array implementing "h" shaped source/drain regions and method for fabricating same
03/04/2004US20040041198 Vertically integrated flash memory cell and method of fabricating a vertically integrated flash memory cell
03/04/2004US20040041176 One F2 memory cell, memory array, related devices and methods
03/04/2004DE10330057A1 Neueinschreibsperrverfahren zum Bestimmen von Neueinschreibfreigabe/Sperre basierend auf dem Ergebnis einer Majoritätsentscheidung Neueinschreibsperrverfahren for determining Neueinschreibfreigabe / lock based on the result of a majority decision
03/04/2004DE10329627A1 Flash-Speicherbaustein Flash memory device
03/04/2004DE10296285T5 Verfahren und System zur Erzeugung und Verteilung von Versorgungsspannungen in Speichersystemen Method and system for generation and distribution of supply voltages in memory systems
03/03/2004EP1394810A1 Nonvolatile storage device and self-repair method for the same
03/03/2004EP1394809A1 Nonvolatile semiconductor memory and method of operating the same
03/03/2004EP1393323A2 Non-volatile memory with improved programming and method therefor
03/03/2004CN1479319A Reference eurrent producing circuit of multiple allocation flash storage
03/03/2004CN1479318A Reference current producing circuit of multiple allocation flash storage
03/03/2004CN1479317A High-speed, low-tension nonvolatile memory
03/03/2004CN1479316A Method of programming, reading and erasing of non volatile storage with multi stage output current
03/03/2004CN1479315A Non volatibility storage
03/03/2004CN1479311A Ferroelectric memory device and its programming method
03/03/2004CN1479202A Method of programmatic quick flashing storage element
03/03/2004CN1140929C Non-volatile semiconductor memory featuring effective cell area reduction using contactless technology
03/02/2004US6701423 High speed address sequencer
03/02/2004US6700823 Programmable common mode termination for input/output circuits
03/02/2004US6700822 Pre-decoder for glitch free word line addressing in a memory device
03/02/2004US6700821 Programmable mosfet technology and programmable address decode and correction
03/02/2004US6700820 Programming non-volatile memory devices
03/02/2004US6700819 Memory with improved differential reading system
03/02/2004US6700818 Method for operating a memory device
03/02/2004US6700817 Semiconductor integrated circuit device with operation/function setting information memory
03/02/2004US6700815 Refresh scheme for dynamic page programming
02/2004
02/26/2004WO2004017436A2 Non-volatile memory element and production method thereof and storage memory arrangement
02/26/2004WO2004017362A2 Nanocrystal write-once read-only memory
02/26/2004WO2004017328A1 Method for reading a structural phase-change memory
02/26/2004US20040037179 Phase-changeable devices having an insulating buffer layer and methods of fabricating the same
02/26/2004US20040037157 Synchronous memory with open page
02/26/2004US20040037152 Non-volatile memory device conducting comparison operation
02/26/2004US20040037137 precharging a second node in said memory array, said second node on a same word line as said first node, wherein said second node is separated from said first node by at least one intervening node in said same word line
02/26/2004US20040037131 Flash cell fuse circuit
02/26/2004US20040037130 Voltage and temperature compensated pulse generator
02/26/2004US20040037127 utilize differential pFET floating gate transistors to store information
02/26/2004US20040037118 High speed low voltage driver
02/26/2004US20040037116 Structure and operating method for nonvolatile memory cell
02/26/2004US20040037115 Flash memory device with distributed coupling between array ground and substrate
02/26/2004US20040037114 Preconditioning global bitlines
02/26/2004US20040037113 Non-volatile semiconductor memory device having an increased access speed while maintaining the production yield
02/26/2004US20040037106 Laser programmable electrically readable phase-change memory method and device
02/26/2004US20040036363 Voltage control circuit for high voltage supply
02/26/2004US20040036109 Memory cell and memory device
02/26/2004US20040036094 Semiconductor device and an electonic device
02/26/2004US20040035920 Recording medium, and recording apparatus, reproducing apparatus, recording method and control method thereof
02/26/2004DE10236439B3 Memory arrangement comprises a substrate, memory regions formed in and/or on the substrate with electrical resistances that can be adjusted by thermal treatment and structure arranged between the memory regions to remove heat
02/26/2004DE10235072A1 EEPROM structure, has an additional gate or substrate capacitor on each cell
02/26/2004DE10217870B4 Nichtflüchtiger Speicher und Verfahren zum Auslesen desselben Of the same non-volatile memory and method for reading