Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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03/11/2004 | US20040047182 Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells |
03/11/2004 | US20040047181 Write state machine architecture for flash memory internal instructions |
03/11/2004 | US20040046681 Dac-based voltage regulator for flash memory array |
03/11/2004 | US20040046212 Semiconductor memory capable of being driven at low voltage and its manufacture method |
03/11/2004 | DE10338273A1 Halbleiterspeicherbauelement und Zugriffsverfahren hierfür The semiconductor memory device and access method thereof |
03/11/2004 | DE10238784A1 Nichtflüchtiges Halbleiterspeicherelement sowie zugehöriges Herstellungs- und Ansteuerverfahren Nonvolatile semiconductor memory device and associated manufacturing and driving |
03/10/2004 | EP1396862A1 Non-volatile semiconductor memory device and rewriting method |
03/10/2004 | EP1395992A2 Flash memory device with increase of efficiency during an apde (automatic program disturb after erase) process |
03/10/2004 | CN1481034A Organic film switching memory and memory appliance |
03/10/2004 | CN1480951A Power supply device capable of lowering power consumption |
03/10/2004 | CN1480950A Flash memory device capable of using in instant multiplex and copying data quickly |
03/10/2004 | CN1480735A Circuit for detecting low power of supplied voltage |
03/09/2004 | US6704239 Non-volatile semiconductor memory device |
03/09/2004 | US6704233 Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, useful in low supply-voltage technologies |
03/09/2004 | US6704225 Sensing circuit for nonvolatile memory device |
03/09/2004 | US6704224 Non-volatile semiconductor memory apparatus |
03/09/2004 | US6704223 Non-volatile semiconductor memory |
03/09/2004 | US6704222 Multi-state operation of dual floating gate array |
03/09/2004 | US6704221 Floating gate programmable cell array for standard CMOS |
03/09/2004 | US6704217 Symmetric segmented memory array architecture |
03/09/2004 | US6703939 System and method for detecting motion of a body |
03/09/2004 | US6703669 Semiconductor device having serially connected memory cell transistors provided between two current terminals |
03/09/2004 | US6703661 Contactless NOR-type memory array and its fabrication methods |
03/09/2004 | US6703275 Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell |
03/04/2004 | WO2004019341A1 Column-decoding and precharging in a flash memory device |
03/04/2004 | WO2003054965A3 Non-volatile memory and method of forming thereof |
03/04/2004 | WO2003036650A3 Method for erasing a memory cell |
03/04/2004 | US20040044927 Programmable device and method of programming |
03/04/2004 | US20040042331 Semiconductor memory device with test mode |
03/04/2004 | US20040042324 Flash memory for reducing peak current |
03/04/2004 | US20040042319 Semiconductor memory device informing internal voltage level using ready/busy pin |
03/04/2004 | US20040042314 Semiconductor memory device |
03/04/2004 | US20040042298 Phase changeable memory devices having reduced cell areas |
03/04/2004 | US20040042295 Nonvolatile semiconductor memory device and its manufacturing method |
03/04/2004 | US20040042294 Novel Multi-state memory |
03/04/2004 | US20040042284 Flash memory for improving write access time |
03/04/2004 | US20040042281 Semiconductor memory device |
03/04/2004 | US20040042280 Nonvolatile semiconductor memory device, nonvolatile semiconductor memory device-integrated system, and defective block detecting method |
03/04/2004 | US20040042272 Novolatile semiconductor memory having multilayer gate structure |
03/04/2004 | US20040042271 Method and apparatus for erasing memory |
03/04/2004 | US20040042270 Programming a flash memory cell |
03/04/2004 | US20040042269 Nonvolatile memory apparatus |
03/04/2004 | US20040042268 One-device non-volatile random access memory cell |
03/04/2004 | US20040042267 Method for reducing drain disturb in programming |
03/04/2004 | US20040042265 Method and apparatus for controlling metal doping of a chalcogenide memory element |
03/04/2004 | US20040042259 Single polarity programming of a pcram structure |
03/04/2004 | US20040042244 Non-volatile semiconductor memory device for connecting to serial advanced technology attachment cable |
03/04/2004 | US20040041214 One F2 memory cell, memory array, related devices and methods |
03/04/2004 | US20040041209 Semiconductor element and semiconductor memory device using the same |
03/04/2004 | US20040041203 Non-volatile semiconductor memory device and fabricating method thereof |
03/04/2004 | US20040041200 High density flash memory architecture with columnar substrate coding |
03/04/2004 | US20040041199 Non-volatile memory transistor array implementing "h" shaped source/drain regions and method for fabricating same |
03/04/2004 | US20040041198 Vertically integrated flash memory cell and method of fabricating a vertically integrated flash memory cell |
03/04/2004 | US20040041176 One F2 memory cell, memory array, related devices and methods |
03/04/2004 | DE10330057A1 Neueinschreibsperrverfahren zum Bestimmen von Neueinschreibfreigabe/Sperre basierend auf dem Ergebnis einer Majoritätsentscheidung Neueinschreibsperrverfahren for determining Neueinschreibfreigabe / lock based on the result of a majority decision |
03/04/2004 | DE10329627A1 Flash-Speicherbaustein Flash memory device |
03/04/2004 | DE10296285T5 Verfahren und System zur Erzeugung und Verteilung von Versorgungsspannungen in Speichersystemen Method and system for generation and distribution of supply voltages in memory systems |
03/03/2004 | EP1394810A1 Nonvolatile storage device and self-repair method for the same |
03/03/2004 | EP1394809A1 Nonvolatile semiconductor memory and method of operating the same |
03/03/2004 | EP1393323A2 Non-volatile memory with improved programming and method therefor |
03/03/2004 | CN1479319A Reference eurrent producing circuit of multiple allocation flash storage |
03/03/2004 | CN1479318A Reference current producing circuit of multiple allocation flash storage |
03/03/2004 | CN1479317A High-speed, low-tension nonvolatile memory |
03/03/2004 | CN1479316A Method of programming, reading and erasing of non volatile storage with multi stage output current |
03/03/2004 | CN1479315A Non volatibility storage |
03/03/2004 | CN1479311A Ferroelectric memory device and its programming method |
03/03/2004 | CN1479202A Method of programmatic quick flashing storage element |
03/03/2004 | CN1140929C Non-volatile semiconductor memory featuring effective cell area reduction using contactless technology |
03/02/2004 | US6701423 High speed address sequencer |
03/02/2004 | US6700823 Programmable common mode termination for input/output circuits |
03/02/2004 | US6700822 Pre-decoder for glitch free word line addressing in a memory device |
03/02/2004 | US6700821 Programmable mosfet technology and programmable address decode and correction |
03/02/2004 | US6700820 Programming non-volatile memory devices |
03/02/2004 | US6700819 Memory with improved differential reading system |
03/02/2004 | US6700818 Method for operating a memory device |
03/02/2004 | US6700817 Semiconductor integrated circuit device with operation/function setting information memory |
03/02/2004 | US6700815 Refresh scheme for dynamic page programming |
02/26/2004 | WO2004017436A2 Non-volatile memory element and production method thereof and storage memory arrangement |
02/26/2004 | WO2004017362A2 Nanocrystal write-once read-only memory |
02/26/2004 | WO2004017328A1 Method for reading a structural phase-change memory |
02/26/2004 | US20040037179 Phase-changeable devices having an insulating buffer layer and methods of fabricating the same |
02/26/2004 | US20040037157 Synchronous memory with open page |
02/26/2004 | US20040037152 Non-volatile memory device conducting comparison operation |
02/26/2004 | US20040037137 precharging a second node in said memory array, said second node on a same word line as said first node, wherein said second node is separated from said first node by at least one intervening node in said same word line |
02/26/2004 | US20040037131 Flash cell fuse circuit |
02/26/2004 | US20040037130 Voltage and temperature compensated pulse generator |
02/26/2004 | US20040037127 utilize differential pFET floating gate transistors to store information |
02/26/2004 | US20040037118 High speed low voltage driver |
02/26/2004 | US20040037116 Structure and operating method for nonvolatile memory cell |
02/26/2004 | US20040037115 Flash memory device with distributed coupling between array ground and substrate |
02/26/2004 | US20040037114 Preconditioning global bitlines |
02/26/2004 | US20040037113 Non-volatile semiconductor memory device having an increased access speed while maintaining the production yield |
02/26/2004 | US20040037106 Laser programmable electrically readable phase-change memory method and device |
02/26/2004 | US20040036363 Voltage control circuit for high voltage supply |
02/26/2004 | US20040036109 Memory cell and memory device |
02/26/2004 | US20040036094 Semiconductor device and an electonic device |
02/26/2004 | US20040035920 Recording medium, and recording apparatus, reproducing apparatus, recording method and control method thereof |
02/26/2004 | DE10236439B3 Memory arrangement comprises a substrate, memory regions formed in and/or on the substrate with electrical resistances that can be adjusted by thermal treatment and structure arranged between the memory regions to remove heat |
02/26/2004 | DE10235072A1 EEPROM structure, has an additional gate or substrate capacitor on each cell |
02/26/2004 | DE10217870B4 Nichtflüchtiger Speicher und Verfahren zum Auslesen desselben Of the same non-volatile memory and method for reading |