Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2004
06/23/2004EP1430386A1 Method of writing data to non-volatile memory
06/23/2004EP1212754B1 Electric/electronic circuit device
06/23/2004EP1036364A4 Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
06/23/2004CN1507630A I/O partitioning system and methodology to reduce band-to-band tunneling current during erase
06/23/2004CN1507036A Flash storage unit erase program utilizing source region and channel region
06/23/2004CN1506977A Semiconductor memory device and method for correctnig reference unit
06/23/2004CN1506976A 电压产生电路 Voltage generating circuit
06/23/2004CN1506975A Memory device having page buffer with double-register
06/23/2004CN1506974A Flash memory with flexible sectioning
06/23/2004CN1155094C Nonvolatile semiconductor memory device
06/22/2004US6754128 Non-volatile memory operations that change a mapping between physical and logical addresses when restoring data
06/22/2004US6754125 Method and device for refreshing reference cells
06/22/2004US6754115 Nonvolatile semiconductor memory device with backup memory block
06/22/2004US6754111 Dual bandgap voltage reference system and method for reducing current consumption during a standby mode of operation and for providing reference stability during an active mode of operation
06/22/2004US6754109 Method of programming memory cells
06/22/2004US6754107 Single supply voltage, nonvolatile phase change memory device with cascoded column selection and simultaneous word read/write operations
06/22/2004US6754106 Reference cell with various load circuits compensating for source side loading effects in a non-volatile memory
06/22/2004US6754105 Trench side wall charge trapping dielectric flash memory device
06/22/2004US6754103 Method and apparatus for programming and testing a non-volatile memory cell for storing multibit states
06/22/2004US6754101 Refresh techniques for memory data retention
06/22/2004US6753868 Single-chip microcomputer and method of modifying memory contents of its memory device
06/22/2004US6753571 Nonvolatile memory cells having split gate structure and methods of fabricating the same
06/22/2004US6753568 Memory device
06/17/2004WO2004051763A2 Method for the production of a memory cell, memory cell and memory cell arrangement
06/17/2004WO2004051753A1 Silicon nitrade charge trapping memory device
06/17/2004WO2004051667A1 Improved system for programming a non-volatile memory cell
06/17/2004WO2004051664A2 Full rail drive enhancement to differential seu hardening circuit while loading data
06/17/2004WO2004051663A1 Improved pre-charge method for reading a non-volatile memory cell
06/17/2004US20040117586 Direct logical block addressing flash memory mass storage architecture
06/17/2004US20040114444 Semiconductor memory device and method for programming and erasing a memory cell
06/17/2004US20040114438 Semiconductor memory device and erase method for memory array
06/17/2004US20040114437 Compaction scheme in NVM
06/17/2004US20040114436 Programmable interconnect cell for configuring a field programmable gate array
06/17/2004US20040114435 Novel architecture to suppress bit-line leakage
06/17/2004US20040114434 Nonvolatile memory system, semiconductor memory, and writing method
06/17/2004US20040114433 Programmable fuse and antifuse and method therefor
06/17/2004US20040114431 Data rewriting method for flash memory
06/17/2004US20040114430 Semiconductor memory device
06/17/2004US20040114429 Nonvolatile memory device
06/17/2004US20040114427 Semiconductor memory device and method for correcting memory cell data
06/17/2004US20040114419 Method and system to store information
06/17/2004US20040114413 Memory and access devices
06/17/2004US20040113199 Nonvolatile semiconductor memory device
06/17/2004US20040113176 Semiconductor device and method of the semiconductor device
06/17/2004US20040113134 Using an mos select gate for a phase change memory
06/17/2004US20040113089 Apparatus and process for measuring light intensities
06/17/2004DE10338984A1 Betriebsverfahren für ein Flash-Speicherbauelement mit SONOS-Zellen A method of operating a flash memory device with SONOS cells
06/17/2004DE10255542A1 Memory circuit arrangement for use with a Harvard-architecture microcomputer circuit has an EPROM within a program storage area that is connected to the microcomputer circuit to permits its reprogramming
06/17/2004DE10255541A1 Memory arrangement for a microcomputer circuit with a Harvard-architecture, has four memory units that are used during software upgrading to prevent software corruption in the event or a power loss or other system interruption
06/16/2004EP1429227A2 Method for preventing tampering of a semiconductor integrated circuit
06/16/2004EP1428254A2 Ic-chip with protective structure
06/16/2004EP1428222A2 Background operation for memory cells
06/16/2004EP1428220A2 Dynamic column block selection
06/16/2004EP1350252B1 Method for storing a volume of data in a target memory area and a memory system
06/16/2004EP1348206A4 Systems within a communication device for evaluating movement of a body and methods of operating the same
06/16/2004EP1158534B1 Semiconductor memory device
06/16/2004EP1029278A4 Moving sequential sectors within a block of information in a flash memory mass storage architecture
06/16/2004CN1505156A 非易失性半导体存储器件及其制造方法 Non-volatile semiconductor memory device and manufacturing method thereof
06/16/2004CN1505154A 半导体存储器件 A semiconductor memory device
06/16/2004CN1505153A 半导体存储装置 The semiconductor memory device
06/16/2004CN1505056A Nonvolatile semiconductor storage device and row-line short defect detection method
06/16/2004CN1505055A Nonvolatile memory device having circuit for stably supplying desired current during data writing
06/16/2004CN1505054A Semiconductor memory device and erase method for memory array
06/16/2004CN1505053A Semiconductor memory device and method for correcting memory cell data
06/16/2004CN1505052A Semiconductor memory device and method for programming and erasing a memory cell
06/16/2004CN1505051A Rapidly flashing electrically erasable programmable read only memory array capable of choosing bytes
06/16/2004CN1505049A Repair fuse initialzing circuit using a flash memory cell
06/16/2004CN1504896A Method and apparatus for performing cache storage of block in non-volatile memory system
06/16/2004CN1154188C Transistor, transistor array, method for manufacturing transistor array, and nonvolatile semiconductor memory
06/16/2004CN1154114C Memory decoder with zero static power
06/15/2004US6751766 Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
06/15/2004US6751716 Semiconductor storage device, control device, and electronic apparatus
06/15/2004US6751158 Bit counter, and program circuit in semiconductor device and method of programming using the same
06/15/2004US6751153 Non-volatile semiconductor memory device and information apparatus
06/15/2004US6751146 System and method for charge restoration in a non-volatile memory device
06/15/2004US6751133 Semiconductor memory which has reduced fluctuation of writing speed
06/15/2004US6751131 Semiconductor storage device and information apparatus
06/15/2004US6751129 Efficient read, write methods for multi-state memory
06/15/2004US6751127 Systems and methods for refreshing non-volatile memory
06/15/2004US6751126 Clamping circuit and nonvolatile memory device using the same
06/15/2004US6751125 Gate voltage reduction in a memory read
06/15/2004US6751124 Bit line setup and discharge circuit for programming non-volatile memory
06/15/2004US6751122 Nonvolatile semiconductor memory device
06/15/2004US6751118 Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
06/15/2004US6750908 Image processing apparatus using recording medium which needs data erasing processing before recording of data
06/15/2004US6750504 Low voltage single-poly flash memory cell and array
06/10/2004WO2004049349A2 Circuit arrangement with non-volatile memory module and method for registering light-attacks on the non-volatile memory module
06/10/2004WO2004049340A1 Cascode amplifier circuit for producing a fast, stable and accurate bit line voltage
06/10/2004WO2004048923A2 Multibit metal nanocrystal memories and fabrication
06/10/2004WO2004023519A3 High-density nrom-finfet
06/10/2004US20040111555 Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
06/10/2004US20040111554 Flash memory with fast boot block access
06/10/2004US20040109380 Single poly embedded eprom
06/10/2004US20040109379 Method of marginal erasure for the testing of flash memories
06/10/2004US20040109377 Nonvolatile memory device having circuit for stably supplying desired current during data writing
06/10/2004US20040109376 Method for detecting logical address of flash memory
06/10/2004US20040109372 Method of accessing memory and device thereof
06/10/2004US20040109371 Memory circuit with redundant configuration
06/10/2004US20040109370 Integrated circuit with self-test device for an embedded non-volatile memory and related test method
06/10/2004US20040109364 Single poly uv-erasable programmable read only memory