Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Patents for G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down (1,872)
11/1999
11/23/1999US5991188 Non-volatile ferroelectric memory with section plate line drivers and method for accessing the same
11/18/1999DE19921259A1 Drive circuit for non-volatile RAM-type ferroelectric memory
11/18/1999DE19921258A1 Drive circuit for non-volatile ferroelectric RAM type memory
11/16/1999US5986962 Internal shadow latch
11/16/1999US5986932 Non-volatile static random access memory and methods for using same
11/16/1999US5986920 Ferroelectric memory device and method of reducing imprint effect thereof
11/04/1999DE19916599A1 Ferro-electrical split word line memory with drive circuit for data storage
11/02/1999US5978252 Ferroelectric memory device having fatigue averaging
11/02/1999US5978250 Ferroelectric memory devices having reconfigurable bit lines and methods of operating same
10/1999
10/28/1999DE19918049A1 Non-volatile ferroelectric random access memory (FRAM)
10/28/1999DE19915075A1 Ferro-electric random access memory (FRAM) with capacitor board lines
10/21/1999WO1999053499A1 Non-volatile storage latch
10/19/1999US5969981 Semiconductor memory device employing ferroelectric memory cell, attaining low power consumption while preventing deterioration of ferroelectric
10/05/1999US5963467 Semiconductor memory device
09/1999
09/28/1999US5959922 Ferroelectric random access memory device with reference cell array blocks
09/23/1999WO1999048102A1 An electrically-programmable read-only memory fabricated using a dynamic random access memory fabrication process and methods for programming same
09/23/1999DE19833570A1 Multi-port semiconductor memory with grouped bitlines
09/22/1999EP0944092A2 Non-volatile semiconductor memory device
09/22/1999EP0944091A2 Ferroelectric memory device
09/14/1999US5953277 Reference potential generator and a semiconductor memory device having the same
09/14/1999US5953246 Semiconductor memory device such as a DRAM capable of holding data without refresh
09/07/1999US5950088 Semiconductor memory device and method of manufacturing the same
08/1999
08/31/1999US5946224 Ferroelectric memory device, a method for read out stored data and a method for standing-by
08/25/1999EP0938096A2 Ferroelectric memory device
08/24/1999US5943286 Memory device having a plurality of cell array blocks including reference cells are connected in series
08/24/1999US5943257 Ferroelectric memory device and data protection method thereof
08/24/1999US5943256 Nonvolatile ferroelectric memory
08/17/1999US5940316 Ferroelectric memory device using a ferroelectric material and method of reading data from the ferroelectric memory device
08/10/1999US5936832 Semiconductor memory device and method of operation thereof
08/03/1999US5932903 Ferroelectric semiconductor memory cell, a memory and a method for accessing the same
07/1999
07/28/1999CN1044420C Nonvolatile semiconductor integrated circuit having address transition detector
07/20/1999US5926413 Ferroelectric memory device
07/07/1999EP0928005A1 Memory with processing function
07/07/1999EP0928004A2 Ferroelectric memory
07/07/1999CN1222254A Memory cell design with vertically stacked crossovers
07/06/1999US5920504 Semiconductor memory having embedding lockable cells
07/01/1999DE19860799A1 Ferroelectric memory and method for operating it
06/1999
06/30/1999EP0926685A2 Ferroelectric memory device with a high-speed read circuit
06/22/1999US5914895 Non-volatile random access memory and methods for making and configuring same
06/17/1999DE19846264A1 Ferro-electric random access memory
06/15/1999US5912937 CMOS flip-flop having non-volatile storage
06/15/1999US5912835 Non-volatile ferroelectric memory device for storing data bits restored upon power-on and intermittently refreshed
06/08/1999US5910911 Semiconductor memory and process of operating the same
06/02/1999EP0920032A2 Ferroelectric random access memory device having short-lived cell detector available for life test for ferroelectric capacitor and method for testing ferroelectric memory cells
06/02/1999CN1218260A Ferroelectric random access memory device having short-lived cell detector AV ailable for life test for ferroelectric capacitor and method for testing ferroelectric memory cells
06/01/1999US5909389 Semiconductor memory device using ferroelectric capacitor
05/1999
05/19/1999EP0917151A2 Semiconductor memory device for reading charges stored in capacitor in memory cell and data reading method therefor
05/19/1999EP0917150A2 Sensing methodology for a 1T/1C ferroelectric memory
05/18/1999US5905671 Ferroelectric memory with feedback
05/11/1999US5903492 Computer system
05/05/1999CN1215925A Semiconductor memory device and manufacturing method thereof
05/04/1999US5901077 Semiconductor memory device comprising ferroelectric capacitors
04/1999
04/28/1999EP0911831A2 Non-volatile semiconductor memory device
04/27/1999US5898630 Dynamic nonvolatile memory cell
04/14/1999EP0908954A2 Semiconductor memory device and manufacturing method thereof
04/08/1999DE19835428A1 Long life semiconductor memory device especially a FeRAM
04/06/1999US5892712 Semiconductor non-volatile latch device including embedded non-volatile elements
04/06/1999US5892705 Apparatus for maintaining non-volatility in ferroelectric ramdom access memory and method therefor
03/1999
03/31/1999CN1212434A Ferroelectric random access memory device with reference cell array blocks
03/30/1999US5889695 Nonvolatile semiconductor memory device reduced in occupy area of memory cell
03/17/1999CN1211040A Ferroelectric random access memory device with improved reliability
03/09/1999US5880989 Sensing methodology for a 1T/1C ferroelectric memory
03/02/1999US5877991 Variable comparison voltage generation apparatus for generating a comparison voltage corresponding to a variation of electric charge quantity in a ferroelectric substance memory element
02/1999
02/17/1999CN1208229A Ferroelectric memory and writing method of therein
01/1999
01/28/1999WO1999004398A1 Memory with processing function
01/26/1999US5864500 Auto-saving circuit for programming configuration elements in non-volatile memory devices
01/26/1999US5864499 Non-volatile data storage unit and method of controlling same
01/26/1999CA1340340C Non-volatile memory circuit using ferroelectric capacitor storage element
01/20/1999EP0892440A1 Controllable conduction device
01/20/1999EP0892408A2 Ferroelectric memory device
01/07/1999EP0888619A1 Electronic memory
12/1998
12/30/1998CN1203424A Ferroelectric memory device
12/15/1998US5850231 Electronic device having ferroelectric memory
12/09/1998CN1201239A Semiconductor storage device capable of storing multibit data in one storage unit
12/01/1998US5844832 Cell array structure for a ferroelectric semiconductor memory and a method for sensing data from the same
11/1998
11/24/1998US5841721 Multi-block erase and verification circuit in a nonvolatile semiconductor memory device and a method thereof
11/10/1998US5835400 Ferroelectric memory devices having nondestructive read capability and methods of operating same
11/10/1998US5835399 Imprint compensation circuit for use in ferroelectric semiconductor memory device
10/1998
10/27/1998US5828615 Reference potential generator and a semiconductor memory device having the same
10/27/1998US5828596 Semiconductor memory device
10/20/1998US5825064 Semiconductor volatile/nonvolatile memory
10/13/1998US5822239 Method of writing data to a single transistor type ferroelectric memory
10/13/1998US5822237 Voltage reference for a ferroelectric 1T/1C based memory
09/1998
09/30/1998EP0693217A4 Zero power high speed programmable circuit device architecture
09/29/1998US5815430 Circuit and method for reducing compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation
09/15/1998US5808943 Semiconductor memory and method of manufacturing the same
09/08/1998US5805516 Dynamic nonvolatile memory cell
09/08/1998US5805495 Ferroelectric semiconductor memory and accessing method therefor
08/1998
08/18/1998US5796670 Nonvolatile dynamic random access memory device
07/1998
07/29/1998CN1189234A 半导体存储器 Semiconductor memory
07/07/1998US5777921 Non-volatile semiconductor memory device
07/01/1998EP0851431A2 Non-volatile memory and method for operating the same
06/1998
06/30/1998US5774392 Bootstrapping circuit utilizing a ferroelectric capacitor
06/16/1998US5768175 Ferroelectric memory with fault recovery circuits
06/10/1998EP0847059A2 Semiconductor memory
05/1998
05/26/1998US5757696 Fast accessible non-volatile semiconductor memory device
05/19/1998US5754466 Ferroelectric memory having pair of reference cells
05/12/1998US5751627 Memory cell that can store data nonvolatily using a ferroelectric capacitor, and a semiconductor memory device including such a memory cell
04/1998
04/28/1998US5745402 Ferroelectric non-volatile memory
04/14/1998US5740110 Dynamic nonvolatile memory cell
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