| Patents for G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down (1,872) |
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| 12/11/2001 | US6330179 Semiconductor memory device and method of manufacturing the same |
| 12/04/2001 | US6327172 Ferroelectric non-volatile memory device |
| 11/28/2001 | CN1324486A Semiconductor device |
| 11/27/2001 | US6324104 Semiconductor integrated circuit device |
| 11/20/2001 | US6321360 System including a ferroelectric memory |
| 11/20/2001 | US6320783 Nonvolatile ferroelectric memory device and circuit for driving the same |
| 11/20/2001 | US6319731 Method for manufacturing a non-volatile memory device |
| 11/15/2001 | US20010040815 Ferroelectric memory device and method for operating ferroelectric memory device |
| 11/15/2001 | US20010040814 Semiconductor memory device |
| 11/14/2001 | EP1154436A2 Semiconductor memory device |
| 11/13/2001 | US6317380 Circuit for driving nonvolatile ferroelectric memory |
| 11/13/2001 | US6317356 Configuration for self-referencing ferroelectric memory cells |
| 11/13/2001 | US6317355 Nonvolatile ferroelectric memory device with column redundancy circuit and method for relieving failed address thereof |
| 11/06/2001 | US6314018 Integrated memory with at least two plate segments |
| 10/31/2001 | CN1319847A Integrated memory with storage and reference unit |
| 10/30/2001 | US6310812 Integrated memory having memory cells and reference cells |
| 10/23/2001 | US6306704 Nonvolatile ferroelectric memory |
| 10/10/2001 | EP1143457A2 Semiconductor memory device and testing system and testing method |
| 10/09/2001 | US6301145 Ferroelectric memory and method for accessing same |
| 10/04/2001 | US20010026491 Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configuration |
| 10/03/2001 | CN1315731A Storage with regenerative logic circuit and method for regenerating content stored therein |
| 10/02/2001 | US6297986 Ferroelectric random access memory |
| 10/02/2001 | US6297985 Cell block structure of nonvolatile ferroelectric memory |
| 10/02/2001 | CA2019310C Non-volatile ram bit cell |
| 09/26/2001 | EP0847059B1 Semiconductor memory |
| 09/25/2001 | US6295223 Ferroelectric random access memory with a memory with a stable sensing margin |
| 09/20/2001 | US20010022741 Ferroelectric memory |
| 09/19/2001 | CN1313603A Data reading out/recording method and driving method of semiconductor memory device |
| 09/18/2001 | US6292386 Integrated memory having cells of the two-transistor/two-capacitor type |
| 09/18/2001 | US6292385 Ferroelectric random access memory |
| 09/13/2001 | US20010021120 Ferroelectric memory |
| 09/12/2001 | EP1132922A1 Ferroelectric memory |
| 09/12/2001 | EP1132921A1 Methods of reading and writing data from/on a semiconductor memory device, and method for driving the device |
| 09/11/2001 | US6288961 Semiconductor memory device for reading charges stored in capacitor in memory cell and data reading method thereof |
| 09/11/2001 | US6288950 Semiconductor memory device capable of generating offset voltage independent of bit line voltage |
| 09/11/2001 | US6288939 Circuit configuration for monitoring states of a memory device |
| 09/11/2001 | US6288931 Ferroelectric memory device having cell groups containing capacitors commonly coupled to transistor |
| 09/11/2001 | US6288930 Semiconductor memory device |
| 09/06/2001 | US20010019498 Ferroelectric memory capable of suppressing deterioration of dummy cells and drive method therefor |
| 09/04/2001 | US6285586 Nonvolatile static random access memory |
| 09/04/2001 | US6285577 Non-volatile memory using ferroelectric capacitor |
| 09/04/2001 | US6285576 Nonvolatile ferroelectric memory |
| 09/04/2001 | US6285575 Shadow RAM cell and non-volatile memory device employing ferroelectric capacitor and control method therefor |
| 08/28/2001 | US6282118 Nonvolatile semiconductor memory device |
| 08/21/2001 | US6278630 Ferroelectric memory device with a high-speed read circuit |
| 08/07/2001 | US6272037 Ferroelectric memory device and method for generating reference level signal therefor |
| 08/02/2001 | DE10002374A1 Halbleiter-Speicheranordnung mit Auffrischungslogikschaltung sowie Verfahren zum Auffrischen des Speicherinhaltes einer Halbleiter-Speicheranordnung A semiconductor memory device with refresh logic circuit and method of refreshing the memory content of a semiconductor memory arrangement |
| 08/01/2001 | EP1120791A1 Semiconductor device |
| 07/31/2001 | US6269027 Non-volatile storage latch |
| 07/31/2001 | US6269019 Ferroelectric memory device capable of adjusting bit line capacitance |
| 07/25/2001 | EP1119004A1 Semiconductor memory with refresh controller and method for refreshing the content of a semiconductor memory |
| 07/24/2001 | US6266272 Partially non-volatile dynamic random access memory formed by a plurality of single transistor cells used as DRAM cells and EPROM cells |
| 07/19/2001 | DE10060665A1 Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu dessen Herstellung A non-volatile ferroelectric memory and method for its production |
| 07/17/2001 | US6262910 Semiconductor memory device having a ferroelectric memory capacitor |
| 07/12/2001 | US20010007531 Circuit for driving nonvolatile ferroelectric memory |
| 07/11/2001 | CN1303100A Integrated storage possessing bipolar transister/double capacitor type storage unit |
| 07/11/2001 | CN1303099A Ferroelectric storage unit self calibrating device |
| 07/10/2001 | US6259641 Integrated memory having sense amplifiers disposed on opposite sides of a cell array |
| 07/05/2001 | US20010006473 Nonvolatile ferroelectric memory device and method for fabricating the same |
| 06/13/2001 | EP0675501B1 Non-volatile memory element with double programmable cell and corresponding reading circuit for redundancy circuits |
| 06/12/2001 | US6246616 Memory device having redundancy cells |
| 06/12/2001 | US6246602 Ferroelectric storage device |
| 05/31/2001 | WO2001039195A1 Spin dependent tunneling memory |
| 05/31/2001 | DE19956069A1 Integrierter Speicher mit Speicherzellen und Referenzzellen Integrated memory having memory cells and reference cells |
| 05/29/2001 | US6240013 Data holding apparatus |
| 05/29/2001 | US6240007 Nonvolatile ferroelectric memory device having global and local bitlines and split workline driver |
| 05/23/2001 | EP1102168A2 Integrated memory with memory cells and reference cells |
| 05/23/2001 | DE10053962A1 Non-volatile ferroelectric memory has two sub-word lines connected to gates of respective transistors and connected to shunt lines |
| 05/23/2001 | DE10043191A1 Non-volatile ferroelectric memory has column redundancy selection circuit that omits failed column address of main cell array block by replacing column with column of redundancy cell array block |
| 05/22/2001 | US6236607 Integrated memory having a reference potential and operating method for such a memory |
| 05/15/2001 | US6233170 Sense amplifier circuit, memory device using the circuit and method for reading the memory device |
| 05/10/2001 | DE19952311A1 Integrated memory with 2-transistor, 2 capacitor memory cells of different design than conventional ones, enabling pre-charging potential selection for 2 bit lines connected to memory cell |
| 05/08/2001 | US6229730 Ferroelectric memory device retaining ROM data |
| 05/08/2001 | US6229728 Ferroelectric memory and method of testing the same |
| 05/03/2001 | US20010000688 Memory structure in ferroelectric nonvolatile memory and readout method therefor |
| 05/02/2001 | CN1065349C Oscillating circuit and non-volatile semiconductor memory |
| 04/26/2001 | DE19950581A1 Anordnung zur Selbstreferenzierung von ferroelektrischen Speicherzellen Arrangement for self-referencing ferroelectric memory cells |
| 04/26/2001 | DE10046051A1 Non-volatile ferroelectric memory e.g. FRAM, DRAM, has main word line driver which outputs control signals to activate any one local word line driver |
| 04/26/2001 | DE10043926A1 Non-volatile ferroelectric memory e.g. dynamic random access memory has row redundancy drive circuit to output inactive signal to main word-line driver, if error occurs in selected row address in main cell region |
| 04/25/2001 | EP1094468A1 A self-reference read scheme for ferroelectric memory cells |
| 04/04/2001 | EP1089341A2 Non-volatile memory |
| 04/04/2001 | EP1089339A2 Ferroelectric capacitor and ferrroelectric memory |
| 03/28/2001 | EP1087405A1 Semiconductor memory device capable of generating offset voltage independent of bit line voltage |
| 03/28/2001 | EP1087403A1 Ferroelectric memory device |
| 03/27/2001 | US6208550 Ferroelectric memory device and method for operating thereof |
| 03/22/2001 | DE19944036A1 Integrierter Speicher mit wenigstens zwei Plattensegmenten Integrated memory having at least two plate segments |
| 03/22/2001 | DE10042388A1 Ferroelectric random-access memory has equalising device for equalising adjacent bit lines, pre-loading setting device for bit line pre-loading level and reference level generation device for read amplifier |
| 03/21/2001 | EP1085523A1 Integrated memory with memory cells and reference cells |
| 03/21/2001 | EP1085517A2 Integrated memory circuit with at least two plate segments |
| 03/21/2001 | CN1288237A Integrated storage unit having at least two slice frayments |
| 03/21/2001 | CN1288236A Integrated storage unit having storage cells and reference unit |
| 03/15/2001 | DE10038228A1 Cellblock structure of non-volatile ferroelectric memory (FRAM), includes capacitor of ferroelectric material having high residual polarization for retaining data after removal of electric field |
| 03/13/2001 | US6201727 Nonvolatile ferroelectric random access memory device with segmented plate line scheme and a method for driving a plate line segment therein |
| 03/07/2001 | EP1081713A1 Ferroelectric memory device with internally lowered supply voltage |
| 03/06/2001 | US6198654 Ferroelectric memory device and method of reading data therefrom |
| 03/06/2001 | US6198653 Ferroelectric memory |
| 03/06/2001 | US6198651 Ferroelectric memory devices which utilize boosted plate line voltages to improve reading reliability and methods of operating same |
| 03/01/2001 | DE10037706A1 Circuit for operating non-volatile ferroelectric memory has two local word line driver units with local X-decoder unit |
| 02/27/2001 | US6195281 Apparatus for generating reference voltage in ferroelectric memory device |
| 02/22/2001 | DE10032311A1 Non-volatile ferroelectric memory comprises partial word lines, bit lines that cut the partial word lines, source/drain impurity regions formed on both sides of the word lines, and ferroelectric capacitors |