Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Patents for G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down (1,872)
01/2003
01/14/2003US6507510 Nonvolatile semiconductor memory device having ferroelectric capacitors
12/2002
12/31/2002US6501685 Channel write/erase flash memory cell and its manufacturing method
12/26/2002US20020197788 Integrated circuit memory devices having non-volatile memory transistors and methods of fabricating the same
12/26/2002US20020196656 Ferroelectric memory and semiconductor memory
12/25/2002CN1097314C 半导体存储装置 The semiconductor memory device
12/19/2002US20020190304 Nonvolatile ferroelectric memory device
12/18/2002CN1096680C 半导体存储装置 The semiconductor memory device
12/17/2002US6496407 Ferroelectric memory
12/12/2002US20020186580 Converting volatile memory to non-volatile memory
12/11/2002EP1265251A2 Sensing methodology for a 1T/1C ferroelectric memory
12/10/2002US6493257 CMOS state saving latch
12/10/2002US6493251 Ferroelectric memory device
12/05/2002US20020181287 Channel write/erase flash memory cell and its manufacturing method
11/2002
11/28/2002US20020176274 Ferroelectric random access memory and its operating method
11/26/2002US6487130 Semiconductor integrated circuit device
11/26/2002US6487104 Semiconductor memory device
11/26/2002US6487103 Data read-out circuit, data read-out method, and data storage device
11/21/2002US20020173101 Embedded electrically programmable read only memory devices
11/20/2002CN1094635C Zero power high speed programmable circuit device architecture
11/19/2002US6483737 Ferroelectric memory device
11/19/2002US6482658 Nonvolatile ferroelectric memory having shunt lines
11/05/2002US6477097 Data backup memory
10/2002
10/31/2002US20020159287 Shadow ram cell using a ferroelectric capacitor
10/30/2002CN1377042A Programmable storage and its programming method
10/29/2002US6473333 Storage circuit with layered structure element
10/29/2002US6473330 Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit
10/22/2002US6469930 Compact nonvolatile circuit having margin testing capability
10/16/2002CN1374663A Storing unit with improved reliability, nonvolatile memory and its controlling method
10/08/2002US6462370 Integrated circuit memory devices having non-volatile memory transistors and methods of fabricating the same
10/02/2002EP1245029A1 Spin dependent tunneling memory
10/01/2002US6459608 Ferroelectric memory and method of reading out data therefrom
10/01/2002US6459118 NAND type nonvolatile ferroelectric memory cell
09/2002
09/26/2002US20020136058 Channel write/erase flash memory cell and its manufacturing method
09/26/2002US20020136052 Programmable memory device
09/26/2002US20020136050 Method of programming a memory device
09/17/2002US6452852 Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configuration
09/17/2002US6452829 Ferroelectric memory device
09/12/2002US20020126522 Memory cell, nonvolatile memory device and control method therefor improving reliability under low power supply voltage
09/11/2002EP1239492A2 Memory cell, nonvolatile memory device and control method therefor, improving reliability at low power supply voltage
08/2002
08/20/2002US6438053 Integrated memory having memory cells and reference cells
08/20/2002US6438021 Methods of reading and writing data from/ on semiconductor memory device, and method for driving the device
08/20/2002US6438020 Ferroelectric memory device having an internal supply voltage, which is lower than the external supply voltage, supplied to the memory cells
08/13/2002US6434038 Non-volatile memory using ferroelectric material and manufacturing method thereof
08/01/2002US20020101757 Semiconductor memory device and method of operation thereof
07/2002
07/30/2002US6426906 Read-out circuit
07/11/2002US20020089875 Microcomputer
07/02/2002US6414873 nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
06/2002
06/27/2002US20020080664 Semiconductor device
06/27/2002US20020080642 Ferroelectric memory device
06/25/2002US6411545 Non-volatile latch
06/25/2002US6411540 Ferroelectric random access memory and its operating method
06/18/2002US6407943 Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
06/13/2002US20020071304 Nonvolatile ferroelectric memory having shunt lines
06/04/2002US6401163 Apparatus and method for rewriting data from volatile memory to nonvolatile memory
05/2002
05/23/2002US20020060930 Semiconductor integrated circuit device
05/21/2002US6392916 Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
05/07/2002US6385120 Power-off state storage apparatus and method
05/02/2002US20020051376 Data read-out circuit, data read-out method, and data storage device
04/2002
04/25/2002US20020048200 Integrated circuit memory devices having non-volatile memory transistors and methods of fabricating the same
04/24/2002CN1083607C 半导体存储器 Semiconductor memory
04/23/2002US6377498 Nonvolatile ferroelectric memory device with row redundancy circuit and method for relieving failed address thereof
04/18/2002US20020044490 Semiconductor memory device
04/18/2002US20020044477 Ferroelectric memory device
04/16/2002US6373744 Ferroelectric memory
04/09/2002US6370058 Non-volatile semiconductor memory device and system LSI including the same
04/02/2002US6366490 Semiconductor memory device using ferroelectric film
03/2002
03/28/2002US20020036915 Ferroelectric memory
03/28/2002US20020036518 Read-out circuit
03/26/2002US6363011 Semiconductor non-volatile latch device including non-volatile elements
03/26/2002US6363004 Nonvolatile ferroelectric memory having shunt lines
03/26/2002US6363003 Ferroelectric memory device
03/26/2002US6363002 Ferroelectric memory with bipolar drive pulses
03/26/2002US6362675 Nonvolatile octal latch and D-type register
03/26/2002US6362500 Memory structure in ferroelectric nonvolatile memory and readout method therefor
03/21/2002US20020034092 Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
03/14/2002US20020031885 Semiconductor memory device using ferroelectric film
03/14/2002US20020031004 Ferroelectric storage device and test method thereof
03/14/2002US20020031003 Ferroelectric memory device
03/13/2002EP1187141A2 Semiconductor memory device
03/12/2002US6356476 Sensing amplifier of nonvolatile ferroelectric memory device
03/07/2002US20020027797 Semiconductor memory device
03/05/2002US6353550 Ferroelectric memory device
02/2002
02/28/2002US20020024839 Ferroelectric memory
02/28/2002US20020024838 Semiconductor memory device using ferroelectric film
02/28/2002US20020024837 Semiconductor memory device and semiconductor integrated device using the same
02/21/2002US20020021579 Nonvolatile semiconductor memory device having ferroelectric capacitors
02/07/2002US20020015328 Semiconductor integrated circuit
01/2002
01/31/2002US20020012264 Ferroelectric non-volatile memory device
01/29/2002US6343032 Non-volatile spin dependent tunnel junction circuit
01/24/2002US20020008986 Data reading method and semiconductor memory device
01/22/2002US6341082 Ferroelectric memory capable of suppressing deterioration of dummy cells and drive method therefor
01/22/2002US6341081 Circuit for driving nonvolatile ferroelectric memory
01/17/2002US20020006053 Ferroelectric memory
01/08/2002US6337592 Non-volatile semiconductor switch circuit
01/08/2002US6337287 High speed, high bandwidth, high density nonvolatile memory system
01/03/2002US20020002663 Data backup memory
12/2001
12/27/2001US20010055229 Semiconductor memory device and testing system and testing method
12/25/2001US6333870 Nonvolatile ferroelectric memory device and method for driving same
12/20/2001US20010054165 Memory device having redundant cells
12/13/2001US20010050367 Methods of reading and writing data from/ on semiconductor memory device, and method for driving the device
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19