Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Patents for G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down (1,872)
02/2001
02/20/2001US6191971 Ferroelectric memory device
02/13/2001US6188601 Ferroelectric memory device having single bit line coupled to at least one memory cell
02/13/2001US6188600 Memory structure in ferroelectric nonvolatile memory and readout method therefor
02/13/2001US6188599 Circuit for driving nonvolatile ferroelectric memory
02/13/2001US6188293 Low power oscillation circuit and non-volatile semiconductor memory having ring oscillator
02/08/2001DE10035108A1 Non-volatile ferroelectric memory has cell arrays in matrix with number of pulldown read amplifiers formed between cell arrays and pullup read amplifier
02/08/2001DE10034290A1 Reference level generator for application in non-volatile ferroelectric memory, includes operational control circuit for controlling the operation of reference bit-line level and feedback reference levels amplifiers
01/2001
01/31/2001EP1072040A1 Non-volatile storage latch
01/25/2001DE19944037C1 Integrated memory e.g. ferroelectric random access memory
01/25/2001DE10034699A1 Read amplifier in non-volatile ferroelectric memory has data buses for both reading and writing data on their associated data buses and three amplifier stages
01/23/2001US6178108 Semiconductor memory device
01/16/2001US6175525 Non-volatile storage latch
01/09/2001US6172897 Semiconductor memory and write and read methods of the same
12/2000
12/26/2000US6166407 Non-volatile semiconductor memory device
12/21/2000DE10001940A1 Direct access memory component has first and second switches for coupling plate line ends to word lines and reference voltage respectively depending on first, second switch control signals
12/07/2000DE19922765A1 Integrated memory device with reference potential e.g. for FRAM
12/06/2000EP1058268A2 Ferroelectric memory and semiconductor memory
11/2000
11/28/2000US6154387 Semiconductor memory device utilizing a polarization state of a ferroelectric film
11/23/2000WO2000070622A1 Storage circuit
11/23/2000DE19921868A1 Redundant semiconductor memory circuit
11/23/2000DE19919359A1 Integrated memory with read amplifiers on opposite sides of memory cells array
11/22/2000EP1054406A2 Ferroelectric non-volatile memory device
11/22/2000CN1274160A Integrated memory with reference electric potential and operation method of such memory
11/14/2000US6147922 Non-volatile storage latch
11/14/2000US6147901 Semiconductor memory operating electrically and optically, retaining information without power supply
11/14/2000US6147900 Spin dependent tunneling memory
11/07/2000US6144578 Ferroelectric memory device and a method for manufacturing thereof
11/02/2000DE19919360A1 Integrated memory device
11/01/2000CN1271944A Integrated memory arranged with reading amplifier on opposite sides of cell area
11/01/2000CN1271942A Integrated memory possessing bit line, word line and plate line and its working method
10/2000
10/31/2000US6141248 DRAM and SRAM memory cells with repressed memory
10/31/2000US6141247 Non-volatile data storage unit and method of controlling same
10/24/2000US6137712 Ferroelectric memory configuration
10/10/2000US6131177 System including a ferroelectric memory
10/03/2000US6128243 Shadow memory for a SRAM and method
09/2000
09/20/2000EP1037213A2 Ferroelectric memory device retaining rom data
09/19/2000US6122191 Semiconductor non-volatile device including embedded non-volatile elements
09/12/2000US6118687 Nonvolatile ferroelectric memory without a separate cell plate line and method of manufacturing the same
08/2000
08/29/2000US6111777 Ferroelectric memory
08/29/2000US6110523 Method of manufacturing a semiconductor memory device
08/23/2000EP1030312A2 Ferroelectric memory
08/02/2000EP1024499A2 Semiconductor memory device and method of operation
08/02/2000EP1024498A2 Semiconductor memory device and method of operation
08/02/2000EP1024497A2 Semiconductor memory device and method of operation
08/02/2000CN2390261Y Non-volatile memory module with software password
08/01/2000US6097622 Ferroelectric memory used for the RFID system, method for driving the same, semiconductor chip and ID card
08/01/2000US6097618 Apparatus and method for correcting data in a non-volatile random access memory
07/2000
07/27/2000DE19952667A1 Non-volatile ferroelectric memory has main cell array with sub-cell arrays with global main, reference bit lines, local main, reference bit lines, switches, controllers, part word line driver
07/25/2000US6094371 Memory device with ferroelectric capacitor
07/20/2000DE19963417A1 Non-volatile ferroelectric memory (FRAM), containing main cell array with number of sub cell arrays and global main bit lines
07/11/2000US6088257 Ferroelectric random access memory device and method for operating the same
07/04/2000US6084795 Ferroelectric memory device
06/2000
06/20/2000US6078529 Data storing device
06/20/2000US6078516 Ferroelectric memory
06/14/2000CN1256495A 铁电存储器装置 Ferroelectric memory device
05/2000
05/31/2000DE19954845A1 NAND type non-volatile ferroelectric memory cell has bit line, word lines, signal line to last transistor's gate, ferroelectric capacitors connected to word lines and transistor outputs
05/30/2000US6069816 High-speed responding data storing device for maintaining stored data without power supply
05/25/2000DE19852570A1 Ferroelektrische Speicheranordnung The ferroelectric memory device
05/23/2000US6067265 Reference potential generator and a semiconductor memory device having the same
05/23/2000US6067245 High speed, high bandwidth, high density nonvolatile memory system
05/17/2000EP1001430A2 Ferroelectric memory device
05/17/2000EP1001429A1 Ferroelectric memory device
05/16/2000US6064590 Non-volatile static random access memory device
05/10/2000EP0693217B1 Zero power high speed programmable circuit device architecture
05/02/2000US6058040 Ferroelectric memory
04/2000
04/25/2000US6055200 Variable test voltage circuits and methods for ferroelectric memory devices
04/25/2000US6055176 Memory device with processing function
04/25/2000US6055175 Nonvolatile ferroelectric memory
04/19/2000EP0994486A2 Semiconductor memory device
04/18/2000US6052304 Non-volatile storage element and method for manufacturing using standard processing
04/13/2000WO2000021092A1 Semiconductor device
04/04/2000US6046928 Non-volatile semiconductor memory device
04/04/2000US6046926 Ferroelectric memory and screening method therefor
03/2000
03/28/2000US6044034 Multiport memory having plurality of groups of bit lines
03/15/2000EP0986066A2 Ferroelectric memory and method of testing the same
03/14/2000US6038162 Semiconductor memory device
03/14/2000US6038161 Ferroelectric memory
03/14/2000US6038160 Ferroelectric semiconductor memory device
03/08/2000EP0983594A1 An electrically-programmable read-only memory fabricated using a dynamic random access memory fabrication process and methods for programming same
03/08/2000CN1246709A Storage structure in ferroelectric nonvolatile memory and its read method
03/07/2000US6034886 Shadow memory for a SRAM and method
03/07/2000US6034884 Nonvolatile dynamic random access memory with ferroelectric capacitors
03/01/2000EP0982779A2 Memory structure in ferroelectric nonvolatile memory and readout method therefor
02/2000
02/29/2000US6031753 Nonvolatile ferroelectric memory and circuit for controlling the same
02/15/2000US6026018 Non-volatile, static random access memory with store disturb immunity
02/08/2000US6023438 Semiconductor memory device for reading charges stored in capacitor in memory cell and data reading method thereof
01/2000
01/18/2000US6016267 High speed, high bandwidth, high density, nonvolatile memory system
01/18/2000US6016266 Semiconductor device with a ferroelectric capacitor
01/05/2000DE19929796A1 System for renewed writing of data from volatile memory into nonvolatile memory
01/05/2000DE19929656A1 Non-volatile ferromagnetic memory achieves high access speed without danger of damaging a reference cell
12/1999
12/28/1999US6009011 Non-volatile memory and method for operating the same
12/22/1999CN1239576A Memory with processing function
12/14/1999US6002608 Ferroelectric memory and writing method of therein
12/08/1999CN1047249C Semiconductor memory device
12/07/1999US5999461 Low voltage bootstrapping circuit
12/07/1999US5999438 Ferroelectric storage device
12/07/1999US5998827 Semiconductor memory device and method of manufacturing the same
12/02/1999DE19923979A1 Ferroelectric memory with split wordline structure
11/1999
11/30/1999US5995409 Electrically-programmable read-only memory fabricated using a dynamic random access memory fabrication process and methods for programming same
11/23/1999US5991189 Ferroelectric random access memory devices having short-lived cell detector available for life test for ferroelectric capacitor and method for testing ferroelectric memory cells
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