Patents for C30B 35 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure (2,584)
07/2002
07/30/2002US6426133 Graphite material coated with silicon carbide
07/10/2002CN1087362C Method for improving zero dislocation yield of single crystals
07/09/2002US6416577 Method for coating inner surfaces of equipment
07/04/2002US20020086119 Protective layer for quartz crucibles used for silicon crystallization
07/04/2002US20020083891 Method for growing single crystal silicon carbide
07/04/2002US20020083890 Tantalum crucible fabrication and treatment
07/04/2002US20020083886 Cruicible and growth method for polycrystal silicon using same
06/2002
06/20/2002US20020076501 Method of applying a release coating to crucibles used to contain molten material while it solidifies, such as molten silicon into ingots
06/20/2002US20020076316 Wafer boat and boat holder
06/05/2002EP1210472A1 Heater arrangement for crystal growth furnace
06/04/2002US6399203 Carbon composite fibers
05/2002
05/23/2002WO2002040732A1 A protective layer for quartz crucibles used for silicon crystallization
05/23/2002WO2002040183A1 Improved crucible coating system
05/23/2002WO2002040182A1 Release coating system for crucibles
05/23/2002US20020059902 Niobium crucible fabrication and treatment
05/23/2002US20020059901 Low defect axially grown single crystal silicon carbide
05/22/2002EP1206591A2 Crucible-holder for single crystal growth
05/16/2002DE10141554A1 Melt crucible, used for melting non-ferrous metals, especially silicon, comprises outer blocking crucible and inner quartz crucible
05/07/2002US6381987 Process for making opaque quartz glass and opaque component made according to the process
04/2002
04/18/2002WO2001068954A3 Axial gradient transport apparatus and process
04/17/2002EP1197993A1 Apparatus for manufacturing semiconductor device
04/11/2002US20020041931 Method for growing thin films
04/04/2002WO2001092609A3 Multilayered quartz glass crucible and method of its production
04/03/2002EP1090167B1 Process and apparatus for preparation of silicon crystals with reduced metal content
04/03/2002EP0972095B1 Crucible and method of preparation thereof
03/2002
03/27/2002EP1191130A1 Saucer for escaped melt in apparatus for pulling up single crystal
03/20/2002EP1187950A2 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support
03/20/2002CN1341080A Quartz glass crucible and method for production thereof
03/19/2002US6358288 Touchless stabilizer for processing spherical devices
03/14/2002US20020029737 Quartz glass crucible for pulling up silicon single crystal and production method therefor
03/07/2002WO2001053572A3 Crucible-holder for single crystal growth
02/2002
02/06/2002EP1012358B1 Inflatable elastomeric element for rapid thermal processing (rtp) system
01/2002
01/29/2002US6342688 Method for preparing iridium crucibles for crystal growth
01/16/2002EP1171211A1 Efg crystal growth apparatus
01/15/2002US6338759 Metal organic chemical vapor deposition apparatus and deposition method
01/01/2002US6334898 Crucible holder for pulling monocrystals
12/2001
12/20/2001WO2001038625A3 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support
12/06/2001WO2001092609A2 Multilayered quartz glass crucible and method of its production
12/05/2001EP1159227A1 Quartz glass crucible and method for the production thereof
11/2001
11/29/2001DE19962452A1 Verfahren für die Herstellung von opakem Quarzglas und nach dem Verfahren hergestelltes opakes Bauteil A process for the production of opaque quartz glass and an opaque component produced by the process
11/20/2001US6319314 Method and device for manufacturing spherical semiconductor crystals
11/14/2001EP1153000A1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
11/06/2001US6313013 Method and device for processing semiconductor material
10/2001
10/18/2001DE10064073A1 Process for determining the crystallographic orientation of semiconductor single crystals comprises measuring an X-ray auxiliary reflex on a planar region of the surface of the crystals
10/16/2001US6302957 Quartz crucible reproducing method
09/2001
09/20/2001WO2001068954A2 Axial gradient transport apparatus and process
09/13/2001WO2001066833A1 Apparatus and method for fabrication of photonic crystals
08/2001
08/28/2001US6280522 Quartz glass crucible for pulling silicon single crystal and production process for such crucible
08/16/2001WO2001059189A1 Quartz member for semiconductor manufacturing equipment and method for metal analysis in quartz member
08/02/2001US20010010112 Manufacturing method of semiconductor wafer, semiconductor manufacturing apparatus, and semiconductor device
08/01/2001EP1120484A1 Carbon fiber reinforced carbon composite and useful as components for pulling single crystal apparatus
07/2001
07/26/2001WO2001053572A2 Crucible-holder for single crystal growth
07/25/2001CN1305540A Process and apparatus for preparation of silicon crystals with preduced metal content
07/18/2001EP0963464B1 Melting pot with silicon protective layers, method for applying said layer and the use thereof
07/12/2001DE19962449A1 Quarzglastiegel und Verfahren für seine Herstellung Quartz glass crucible and process for its preparation
07/09/2001WO2001064976A1 Saucer for escaped melt in apparatus for pulling up single crystal
07/03/2001US6254674 Method of controllably delivering dopant by limiting the release rate of dopant from a submerged vessel
06/2001
06/28/2001WO2001046077A1 Quartz glass crucible and method for the production thereof
06/27/2001EP1110917A2 Method of producing opaque silica glass and opaque elements produced by the process
06/12/2001US6246031 Mini batch furnace
06/07/2001WO2001040552A1 Mini batch furnace
06/06/2001CN1066696C Forming body with high silicon dioxide content and its producing process
05/2001
05/31/2001WO2001038625A2 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support
05/31/2001WO2001038255A1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
05/23/2001DE10048397A1 Process for restoring a quartz crucible comprises internally repairing the crucible using chemical etching, mechanically grinding or heat treatment at high temperature on the inner surface
05/15/2001US6231673 Manufacturing method of semiconductor wafer, semiconductor manufacturing apparatus, and semiconductor device
04/2001
04/25/2001EP1094039A1 Method for manufacturing quartz glass crucible
04/24/2001US6221478 Surface converted graphite components and methods of making same
04/11/2001EP1090167A1 Process and apparatus for preparation of silicon crystals with reduced metal content
02/2001
02/06/2001US6183553 Process and apparatus for preparation of silicon crystals with reduced metal content
01/2001
01/30/2001US6179914 Dopant delivery system and method
01/24/2001EP1070161A1 A method and a device for epitaxial growth of objects by chemical vapour deposition
01/23/2001US6176901 Dust precipitator
01/18/2001DE10022333A1 Silicon carbide coated graphite component e.g. gas rectification tube, for silicon single crystal drawing apparatus, has graphite base adhered with primary and secondary layers of silicon carbide film
01/04/2001WO2001000908A1 Heater arrangement for crystal growth furnace
01/02/2001US6168638 Touchless stabilizer for processing spherical shaped devices
01/02/2001US6168427 Apparatus for guiding the removal of a processing tube from a semiconductor furnace
12/2000
12/26/2000US6165425 A quartz, graphite or a ceramic melting pot having a silicon nitride protective layer for avoiding adhesion between the melting pot and silicon melts
12/07/2000WO2000074124A1 Apparatus for manufacturing semiconductor device
11/2000
11/30/2000DE19924635A1 Composite quartz glass crucible, useful for Czochralski single crystal growth, comprises an opaque outer layer with a bubble-free transparent inner layer of separately formed inserts
11/22/2000CN1058761C Heat treating appts. for mercury-cadmium tellurid
11/16/2000WO2000068625A1 End-effector with integrated cooling mechanism
10/2000
10/24/2000US6136092 Depositing silicon dioxide powder on the inner surface of the substrate, heating to melt and form the transparent inner layer
10/19/2000DE19917288A1 Quarzglas-Tiegel und Herstellungsverfahren dafür Quartz glass crucible and the production method thereof
10/18/2000EP1045046A2 Quartz glass crucible and process for its manufacture
10/17/2000US6132508 Device and method for liquefying and crystallizing substances
10/12/2000WO2000059837A1 Method for manufacturing quartz glass crucible
10/03/2000US6127569 Crystallization of α-L-aspartyl-L-phenylalanine methyl ester
09/2000
09/20/2000CN1056656C Permanent-magnet transmission T type guide slot sample control and seed crystal applying mechanism
08/2000
08/22/2000US6106610 Pulling; scattering crystallization promoter on interior wall of crucible; reducing defects
08/09/2000EP1026289A1 Quartz glass crucible for pulling up silicon single crystal and process for producing the same
08/09/2000EP1007225A4 High purity composite useful as a susceptor
07/2000
07/25/2000US6093245 Method for growing crystal
07/19/2000EP1020546A1 Quartz glass crucible for pulling silicon monocrystal and method of manufacturing the same
07/05/2000EP1017085A2 Semiconductor device manufacturing apparatus employing vacuum system
06/2000
06/28/2000EP1012358A1 Inflatable elastomeric element for rapid thermal processing (rtp) system
06/14/2000EP1007225A1 High purity composite useful as a susceptor
06/14/2000CN1256724A Crucible and method of preparation thereof
06/06/2000US6071350 Semiconductor device manufacturing apparatus employing vacuum system
05/2000
05/30/2000US6068925 Corrosion resistant composites useful in chemical reactors
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