| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/07/2015 | CN104264210A 一种超细颗粒金刚石单晶的合成方法 A method of synthesis of ultrafine particles of diamond single crystals |
| 01/07/2015 | CN104261527A 电解锌厂生产废水的处理方法 Electrolytic zinc plant wastewater treatment |
| 01/07/2015 | CN104259454A 一种高效利用表面等离子体共振效应的纳米团簇及其制备方法和应用 An efficient use of surface plasmon resonance effect of nanoclusters and its preparation method and application |
| 01/07/2015 | CN104259442A 一种防止单晶叶片产生杂晶缺陷的方法 A method for preventing crystal defects in single crystal blades produce hybrid approach |
| 01/07/2015 | CN104259389A 一种单晶铸件用中注管及其制备方法 Single crystal castings NOTE pipe and its preparation method |
| 01/07/2015 | CN103484121B Se胶体半导体纳米晶的方法 Se colloidal semiconductor nanocrystals method |
| 01/07/2015 | CN103059860B 一种锰掺杂钇铝石榴石单晶材料及其应用 Yttrium aluminum garnet single crystal material and apply a manganese-doped |
| 01/07/2015 | CN102927815B 悬浮式冷坩埚连续熔铸与定向凝固装置 Suspended cold crucible continuous casting and directional solidification system |
| 01/07/2015 | CN102576726B 隧道场效应晶体管及其制造方法 Tunneling field effect transistor and manufacturing method thereof |
| 01/07/2015 | CN102560659B 一种非线性光学晶体及其制备方法和用途 A nonlinear optical crystal and its preparation and use |
| 01/07/2015 | CN102477579B 获取ZnSe/ZnS光学基元的方法 Get ZnSe / ZnS Optical primitive methods |
| 01/07/2015 | CN102409391B 一种钇铝石榴石单晶的制备方法 Method for preparing a single crystal of yttrium aluminum garnet |
| 01/06/2015 | US8928035 Gallium nitride devices with gallium nitride alloy intermediate layer |
| 01/06/2015 | US8928034 Gallium nitride devices with aluminum nitride alloy intermediate layer |
| 01/06/2015 | US8928004 Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same |
| 01/06/2015 | US8928000 Nitride semiconductor wafer including different lattice constants |
| 01/06/2015 | US8927396 Production process of epitaxial silicon carbide single crystal substrate |
| 01/06/2015 | US8927302 Chemical vapor deposition apparatus and method for manufacturing light-emitting devices using same |
| 01/06/2015 | US8927101 Abrasive particles having a unique morphology |
| 01/06/2015 | US8926754 Epitaxial growth susceptor |
| 01/06/2015 | US8926753 Vapor phase growth apparatus and method of fabricating epitaxial wafer |
| 01/06/2015 | US8926752 Method of producing a group III nitride crystal |
| 01/06/2015 | US8926749 Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| 01/01/2015 | US20150004435 Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates |
| 01/01/2015 | US20150001556 Growth substrate and light emitting device comprising the same |
| 12/31/2014 | CN204058658U 一种用于通用铸锭炉籽晶熔化高度的测量装置 A GM seed melting ingot furnace height measuring device |
| 12/31/2014 | CN204058657U 一种制造晶粒便于切割的材料块 A method of manufacturing grain conveniently cut piece of material |
| 12/31/2014 | CN204058656U 一种拉晶棒 One kind of pulling rods |
| 12/31/2014 | CN204058655U 一种可视升降式单晶炉 A visual lift Puller |
| 12/31/2014 | CN204058654U 带加热柜节能多晶硅铸锭炉 Saving cabinet with heated polycrystalline silicon ingot furnace |
| 12/31/2014 | CN204058648U 一种用于定向生长蓝宝石单晶的可重复使用坩埚 A sapphire single crystal directional growth reusable crucible |
| 12/31/2014 | CN204058647U 一种晶硅铸锭炉炉体 A crystalline silicon ingot furnace furnace |
| 12/31/2014 | CN104250854A 一种石膏晶须干法转形的方法 One kind of dry plaster whisker Transformation method |
| 12/31/2014 | CN104250853A Iii族氮化物晶体 Iii nitride crystal |
| 12/31/2014 | CN104250852A 蓝宝石晶体生长装置及生长方法 Apparatus and method for growing sapphire crystal growth |
| 12/31/2014 | CN104250851A 一种多晶铸锭炉 A polycrystalline ingot furnace |
| 12/31/2014 | CN104250850A 一种石英坩埚、其制备方法及专用模具 A silica crucible, and its preparation method and special tooling |
| 12/31/2014 | CN104250848A 利用外部装料结构进行多晶硅装料的控制方法 An external charging control method for a polysilicon structure the filled |
| 12/31/2014 | CN104250847A 单晶炉炉压检测报警补偿系统 Crystal furnace compensation voltage detection alarm system |
| 12/31/2014 | CN104250845A 一种低维有机倍频晶体的构筑方法 The method of constructing a low-dimensional organic doubling crystal |
| 12/31/2014 | CN104249159A 一种大量制备金纳米棒的方法 A large number of gold nanorods method for preparing |
| 12/31/2014 | CN102912434B 调控碘化铅化学配比的方法及系统 Stoichiometric regulation of lead iodide method and system |
| 12/31/2014 | CN102839425B 一种硫酸钙晶须的合成方法 A synthesis of calcium sulfate whiskers |
| 12/31/2014 | CN102828245B 一种氟硼铍酸钙钠非线性光学晶体及生长方法和用途 An boron, beryllium fluoride, sodium, calcium and nonlinear optical crystal growth method and use |
| 12/31/2014 | CN102747420B 用于多晶铸锭炉的热交换台及其通气管径变化方法 Taiwan and ventilation pipe diameter change method for polycrystalline ingot furnace heat exchange |
| 12/31/2014 | CN102703976B 一种多晶硅炉 One kind of polysilicon furnace |
| 12/31/2014 | CN102628186B 正交相锂钽掺杂铌酸钾钠基无铅压电单晶的制备方法 Preparation of potassium sodium niobate based lead-free piezoelectric single crystal of lithium-tantalum-doped phase quadrature |
| 12/31/2014 | CN102569480B 一种纳米结构的氧化亚铜基pin结太阳能电池及其制备方法 Nitrous oxide copper-based pin-junction solar cell and method for preparing nanostructures |
| 12/31/2014 | CN102534806B 大面积金红石型二氧化钛(110)(1×1)表面的制备方法 Large-area rutile titanium dioxide (110) (1 × 1) surface preparation |
| 12/31/2014 | CN102453952B 长晶炉的供气装置 Crystal growth furnace gas supply device |
| 12/30/2014 | US8921980 Aluminum nitride single crystal forming polygonal columns and a process for producing a plate-shaped aluminum nitride single crystal using the same |
| 12/30/2014 | US8921979 Method for producing a semiconductor layer |
| 12/30/2014 | US8921851 Non-polar plane of wurtzite structure material |
| 12/30/2014 | US8921231 Group III nitride wafer and its production method |
| 12/30/2014 | US8921205 Deposition of amorphous silicon-containing films |
| 12/30/2014 | US8920677 Scintillator material and scintillation detector |
| 12/30/2014 | US8920675 Synthesis, capping and dispersion of nanocrystals |
| 12/30/2014 | US8920560 Method for manufacturing epitaxial wafer |
| 12/25/2014 | US20140377126 Ruthenium nanoparticles with essentially face-centered cubic structure and method for producing the same |
| 12/25/2014 | US20140374146 Metal nanonetwork and method for producing the same, and conductive film and conductive substrate using metal nanonetwork |
| 12/24/2014 | CN204039550U 手工单晶制绒机加热器辅助配件、加热器和加热防护系统 Texturing machine handmade crystal auxiliary heater parts, heaters and heat protection system |
| 12/24/2014 | CN204039549U 一种红外光学锗单晶碱化酸化清洗池 An infrared optical germanium crystal acidified alkaline cleaning pool |
| 12/24/2014 | CN204039547U 蓝宝石长晶炉悬吊工具 Sapphire Dan Changjing furnace suspended Tools |
| 12/24/2014 | CN204039546U 大容量多晶硅铸锭炉的加热装置 Heating capacity of polysilicon ingot furnace |
| 12/24/2014 | CN204039545U 一种蓝宝石晶体泡生法生长炉多温区保温侧屏 One kind of sapphire crystal growth furnace Kyropoulos multi-temperature insulation side screen |
| 12/24/2014 | CN204039544U 一种改良子晶夹 An improved grain sub folder |
| 12/24/2014 | CN204039543U 一种坩埚吊具 One kind of crucible spreader |
| 12/24/2014 | CN104246987A Iii族氮化物基板的处理方法及外延基板的制造方法 The method of manufacturing processing method Iii nitride substrate and the epitaxial substrate |
| 12/24/2014 | CN104246027A 复合基板及功能元件 Composite substrate and functional elements |
| 12/24/2014 | CN104246026A SiC单晶及其制造方法 SiC single crystal and manufacturing method thereof |
| 12/24/2014 | CN104246025A 用于生产二维纳米材料的方法 Production method for two-dimensional material |
| 12/24/2014 | CN104246024A 生长晶锭的方法和晶锭 Grown ingot and ingot |
| 12/24/2014 | CN104246022A 制造单晶硅 Manufacturing monocrystalline |
| 12/24/2014 | CN104246021A 在硅熔体的表面上达成持续的非等向晶体成长的装置 Etc. to achieve sustained non-crystal growth apparatus on the surface of the silicon melt |
| 12/24/2014 | CN104246006A 气相沉积装置以及相关的方法 Vapor deposition apparatus and related method |
| 12/24/2014 | CN104245883A 荧光体及其制造方法以及发光装置 Phosphor and a light emitting device and manufacturing method thereof |
| 12/24/2014 | CN104233473A 用于通用铸锭炉籽晶熔化高度的测量装置及测量方法 GM seed for ingot melting furnace height measuring device and measuring method |
| 12/24/2014 | CN104233471A 一种混合溶剂热制备单晶三硫化二铋纳米线的方法 A mixed solvothermal preparation trisulfide crystal bismuth nanowires method |
| 12/24/2014 | CN104233470A 一种控制氢气流量p型低掺杂碳化硅薄膜外延制备方法 A method of controlling the flow of hydrogen-doped p-type silicon carbide film epitaxial low Preparation |
| 12/24/2014 | CN104233469A 一种倒置生长rebco块材的方法 A growth rebco bulk inversion method |
| 12/24/2014 | CN104233468A 非线性光学晶体及其制法和用途 Nonlinear optical crystal preparation and use |
| 12/24/2014 | CN104233467A 补给装置 Supply unit |
| 12/24/2014 | CN104233466A 一种控制生长压强p型低掺杂碳化硅薄膜外延制备方法 A method of controlling the growth of low pressure p-type doped silicon carbide epitaxial film preparation |
| 12/24/2014 | CN104233465A 一种控制生长压强n型重掺杂碳化硅薄膜外延制备方法 An n-type epitaxial growth control pressure method for the preparation of heavily doped silicon carbide films |
| 12/24/2014 | CN104233464A 一种控制氢气流量p型重掺杂碳化硅薄膜外延制备方法 A method of controlling the flow of hydrogen p-type silicon carbide epitaxial film preparation method heavily doped |
| 12/24/2014 | CN104233463A 一种p型梯度掺杂碳化硅薄膜外延制备方法 SiC epitaxial film gradient method for preparing a p-type doping |
| 12/24/2014 | CN104233462A 一种控制生长压强p型重掺杂碳化硅薄膜外延制备方法 A method for controlling the pressure p-type epitaxial growth of silicon carbide films prepared by the method of heavily doped |
| 12/24/2014 | CN104233461A 一种控制氢气流量n型重掺杂碳化硅薄膜外延制备方法 A method for controlling hydrogen flow n-type epitaxial silicon carbide film preparation method heavily doped |
| 12/24/2014 | CN104233459A 一种升华法制备氮化铝晶体的生长装置 Preparation of an aluminum nitride crystal growth apparatus sublimation |
| 12/24/2014 | CN104233458A 一种碳化硅晶体生长用的石墨籽晶托 A silicon carbide crystal growth of graphite seed tray |
| 12/24/2014 | CN104233457A 制造第III族氮化物半导体晶体的方法及制造GaN衬底的方法 The method of manufacturing a group III nitride semiconductor crystal and a method of manufacturing a GaN substrate |
| 12/24/2014 | CN104233456A 将单晶直径控制为给定直径的方法 The single crystal diameter control method for a given diameter |
| 12/24/2014 | CN104233455A 一种制备高温超导掺杂晶体的方法 A method for preparing a high-temperature superconducting crystals doped |
| 12/24/2014 | CN104233454A 一种高效合成单晶六方氮化硼结构的取代反应方法 An efficient method for the synthesis of the substitution reaction crystal structure of hexagonal boron nitride |
| 12/24/2014 | CN104233362A 一种高纯碲的制备方法 Method for preparing high-purity tellurium |
| 12/24/2014 | CN104233220A 一种控制掺杂源流量p型低掺杂碳化硅薄膜外延制备方法 A control flow of p-type doping source of low-doped silicon carbide epitaxial film preparation |
| 12/24/2014 | CN102828227B 单晶的方法 Single crystal |
| 12/24/2014 | CN102618927B 单晶的方法 Single crystal |
| 12/24/2014 | CN102605425B 稀土离子掺杂氟氯化铅激光基质晶体及其制备方法 Rare earth ion-doped laser CFC lead crystal matrix and its preparation method |
| 12/24/2014 | CN102586873B 反蛋白石结构的一步法制备方法 One-step preparation of inverse opal structure |