| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 09/11/2013 | CN103296133A Crystalline silicon battery piece with graphite substrate |
| 09/11/2013 | CN103290483A Silicon slice heat treatment reaction tube and silicon slice heat treatment method |
| 09/11/2013 | CN103290482A Method for removing stress of silicon carbide crystal with large diameter |
| 09/11/2013 | CN103290481A Superfine single crystal Si nanowire and preparation method thereof |
| 09/11/2013 | CN103290480A Li2In2SiS6 compound and Li2In2GSiS6 nonlinear optical crystal as well as preparation methods and applications thereof |
| 09/11/2013 | CN103290479A Li2In2SiSe6 compound and Li2In2SiSe6 nonlinear optical crystal as well as preparation methods and applications thereof |
| 09/11/2013 | CN103290478A Li2In2GeS6 compound and Li2In2GeS6 nonlinear optical crystal as well as preparation methods and applications thereof |
| 09/11/2013 | CN103290477A Liquid phase epitaxy device for preparing InAsSb films and method |
| 09/11/2013 | CN103290476A Crucible for growing silicon carbide monocrystal and having multiple growth cavities |
| 09/11/2013 | CN103290475A GdAl3(BO3)4 crystal growth fluxing agent and GdAl3(BO3)4 crystal growth method |
| 09/11/2013 | CN103290474A Preparation method of germanium nanotubes |
| 09/11/2013 | CN103290473A Quartz crucible, production method of the same, and casting apparatus |
| 09/11/2013 | CN103290472A Cooling method for whole kyropoulos large-sized sapphire crystal growing process |
| 09/11/2013 | CN103290471A Method for growing tabular gallium oxide crystals through edge-defined film-fed growth process |
| 09/11/2013 | CN103290470A Diameter transitional czochralski silicon growing method |
| 09/11/2013 | CN103290469A Single crystal furnace with encoder |
| 09/11/2013 | CN103290467A Water-cooled jacket structure of single crystal furnace |
| 09/11/2013 | CN103290466A YAB (Yttrium Aluminum Borate) crystal growth fluxing agent and YAB crystal growing method |
| 09/11/2013 | CN103290465A Method for preparing aluminum metal nanowires through high gravity technology |
| 09/11/2013 | CN103288357A Silicon nitride solution and preparation method, and polysilicon ingot casting crucible and making method thereof |
| 09/11/2013 | CN103288118A Method for dissociating industrial by-product gypsum and crystallizing to grow calcium sulphate crystal whiskers |
| 09/11/2013 | CN103288058A Li2In2GeSe6 compound and Li2In2GeSe6 nonlinear optical crystal as well as preparation methods and applications thereof |
| 09/11/2013 | CN102560212B High plasticity superhigh temperature niobium-based directionally solidified alloy and preparation method thereof |
| 09/11/2013 | CN102352528B Method for extracting phosphorite co-production gypsum whisker by utilizing nitric acid |
| 09/11/2013 | CN102351851B 4-(5-dimethylaminothiophenevinyl)methylpyridine sulfonate, second-order nonlinear optical crystal of 4-(5-dimethylaminothiophenevinyl)methylpyridine sulfonate, and their preparation methods |
| 09/11/2013 | CN102277618B Polysilicon ingot, manufacturing method and growing furnace thereof, as well as bottom plate and solar cell of growing furnace |
| 09/11/2013 | CN102174712B (al, in, ga)n substrate, manufacturing method thereof, microelectronic or opto-electronic device product |
| 09/11/2013 | CN102099511B Algan bulk crystal manufacturing method and algan substrate manufacturing method |
| 09/11/2013 | CN101887935B Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 09/10/2013 | US8530353 SiC substrate and method of manufacturing the same |
| 09/10/2013 | US8529696 Method for producing hexagonal boron nitride single crystals |
| 09/05/2013 | DE102007010286B4 Verfahren zum Herstellen eines Verbindungshalbleiterwerkstoffs, einer III-N-Schicht oder eines III-N-Bulkkristalls, Reaktor zur Herstellung des Verbindungshalbleiterwerkstoffs, Verbindungshalbleiterwerkstoff, III-N-Bulkkristall und III-N-Kristallschicht A method of manufacturing a compound semiconductor material, a III-N layer or a III-N bulk crystal, reactor for producing the compound semiconductor material, compound semiconductor materials, III-N bulk crystal and III-N crystal layer |
| 09/04/2013 | EP2634295A1 Method for producing gemstones from silicon carbide |
| 09/04/2013 | EP2634294A1 Method for manufacturing optical element |
| 09/04/2013 | EP2633103A1 Ammonothermal growth of group-iii nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other |
| 09/04/2013 | EP2633102A1 Process for manufacturing colloidal nanosheets by lateral growth of nanocrystals |
| 09/04/2013 | CN203174225U Crystal growing furnace |
| 09/04/2013 | CN203174224U Composite baseplate and functional elements |
| 09/04/2013 | CN203174223U Composite baseplate and functional elements |
| 09/04/2013 | CN203174222U Thermal field structure of polycrystalline silicon ingot casting furnace |
| 09/04/2013 | CN203174218U Continuous filtration automatic control device in crystal cultivation process |
| 09/04/2013 | CN103282559A Apparatus for producing sic single crystal and method for producing sic single crystal |
| 09/04/2013 | CN103282558A Device for producing sic single crystals, jig used in said production device, and method of producing sic single crystals |
| 09/04/2013 | CN103282557A Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 09/04/2013 | CN103282556A Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device |
| 09/04/2013 | CN103282555A Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
| 09/04/2013 | CN103282554A Method for producing semiconductor crystal, crystal production device, and group 13 nitride semiconductor crystal |
| 09/04/2013 | CN103282143A Casting device and casting method |
| 09/04/2013 | CN103276451A Heat treatment method for elimination of InAs monocrystal surface charge accumulation layer |
| 09/04/2013 | CN103276449A Pressure induced growth and self-assembly method for nano helical structure |
| 09/04/2013 | CN103276448A Perovskite structure lead titanate single crystal nano-sheet preparation method |
| 09/04/2013 | CN103276447A Method for preparing specific mixed-orientation YBCO (Yttrium Barium Copper Oxide) high-temperature superconducting thick film |
| 09/04/2013 | CN103276446A Method for reutilization of slag agent after medium smelting |
| 09/04/2013 | CN103276445A Method for liquid-phase synthesis of one-dimensional nano array ZnO thin film by using seed auxiliary method |
| 09/04/2013 | CN103276441A Three-jaw crucible clamp of crystal pulling furnace and crucible clamping method |
| 09/04/2013 | CN103276440A Processing method for rare earth carbonate with low chlorine ions |
| 09/04/2013 | CN103276439A Preparation method of molecular colloidal photonic crystal beads |
| 09/04/2013 | CN103274583A Quartz crucible and production method thereof, and P-type silicon casting ingot and production method thereof |
| 09/04/2013 | CN103272528A Method for synthesizing cubic boron nitrides by using alkali metal azide |
| 09/04/2013 | CN101990698B Group iii nitride semiconductor element and epitaxial wafer |
| 09/04/2013 | CN101962806B Preparation method of flexible cold cathode material |
| 09/04/2013 | CN101792926B Method for growing terbium-aluminum garnet crystal by using guide die pulling method |
| 09/04/2013 | CN101772596B Arrangement and method for producing a crystal from the melt of a raw material and monocrystal |
| 09/04/2013 | CN101724893B Method for preparing high-purity semi-insulating silicon carbide crystalloid |
| 09/03/2013 | US8524365 Preparation of nanoparticle materials |
| 08/29/2013 | WO2013126899A2 Electromagnetic mixing for nitride crystal growth |
| 08/29/2013 | WO2013124162A1 Insert for a melting crucible and melting crucible comprising such an insert |
| 08/29/2013 | US20130224520 Bismuth-substituted rare-earth iron garnet crystal film and optical isolator |
| 08/29/2013 | US20130224500 Bismuth-substituted rare-earth iron garnet crystal film and optical isolator |
| 08/29/2013 | US20130224100 Electromagnetic mixing for nitride crystal growth |
| 08/29/2013 | US20130221548 Carbon thin film, mold for molding optical element, and method for manufacturing optical element |
| 08/29/2013 | US20130221279 Synthesis, capping and dispersion of nanocrystals |
| 08/29/2013 | DE102012003903A1 Verfahren zur thermischen Behandlung von Siliziumcarbidsubstraten A process for the thermal treatment of Siliziumcarbidsubstraten |
| 08/28/2013 | EP2631215A1 Chunk polycrystalline silicon and process for cleaning polycrystalline silicon chunks |
| 08/28/2013 | EP2630278A2 Process for growing silicon carbide single crystal and device for the same |
| 08/28/2013 | EP2630277A1 Method for producing a low dislocation density iii-nitride crystal |
| 08/28/2013 | CN203159744U Thermal insulation cage for polysilicon ingot furnace |
| 08/28/2013 | CN203159743U Improved overflow protection device for polycrystal ingot furnace |
| 08/28/2013 | CN203159742U Efficient crucible for casting polycrystal ingot |
| 08/28/2013 | CN103270203A Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide |
| 08/28/2013 | CN103270202A Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon |
| 08/28/2013 | CN103270201A Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 08/28/2013 | CN103266356A Method to prolong tungsten crucible cover |
| 08/28/2013 | CN103266353A Sandwich-type bismuth tungstate compound with methylimidazole simultaneously as counter ion and modified group and preparation method and application thereof |
| 08/28/2013 | CN103266352A Low cost high-performance polycrystalline silicon base film preparation method |
| 08/28/2013 | CN103266351A Solid-liquid separation method and device for polycrystalline silicon ingot |
| 08/28/2013 | CN103266350A Vacuum solid-liquid separation method and device for polycrystalline silicon ingot |
| 08/28/2013 | CN103266349A High-purity hollow silicon material, as well as polycrystalline silicon and ingot silicon vacuum solid-liquid separation method and equipment |
| 08/28/2013 | CN103266348A Rapid energy saving single crystal silicon drawing furnace shutdown process |
| 08/28/2013 | CN103266346A Growing equipment for growing YVO4 (Yttrium Vanadate) crystal with drawing method and growing method based on same |
| 08/28/2013 | CN103266345A Lanthanide rare earth ion doped bismuth titanate monocrystal thin slice and preparation method thereof |
| 08/28/2013 | CN103266294A Method of repeatedly using molybdenum crucible in HEM crystal growth |
| 08/28/2013 | CN102311132B Rod-like one-dimensional polycrystalline gamma-Al2O3 nanocrystal grains and preparation method thereof |
| 08/28/2013 | CN101845666B N-doped crystalline silicon and preparation method thereof |
| 08/27/2013 | US8518806 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device |
| 08/27/2013 | US8518178 Silicon carbide nanofiber and fabrication method of silicon carbide nanofiber using emulsion spinning |
| 08/22/2013 | WO2013122668A1 Apparatus for achieving sustained anisotropic crystal growth on the surface of a silicon melt |
| 08/22/2013 | WO2013122667A1 Method for achieving sustained anisotropic crystal growth on the surface of a melt |
| 08/22/2013 | US20130216800 Perovskite to brownmillerite complex oxide crystal structure transformation induced by oxygen deficient getter layer |
| 08/22/2013 | DE112011103871T5 Verfahren zum Ausbilden von Gruppe-III-Nitridmaterialien und Strukturen, die durch derartige Verfahren ausgebildet sind A method of forming group III-nitride materials and structures which are formed by such processes |