Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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08/22/2013 | DE112011103869T5 Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind A method of forming metal nitride III-Nitridgrundmaterialien on growth template layers and structures formed by such methods |
08/22/2013 | DE112011103417T5 Quarzglastiegel, Verfahren zum Herstellen desselben und Verfahren zum Herstellen eines Silizium-Einkristalls A quartz glass crucible method for producing the same and method for manufacturing a silicon single crystal |
08/22/2013 | DE112006002430B4 Verfahren zur Herstellung von Super-Gittern unter Verwendung von abwechselnden Hoch und Niedrig-Temperatur-Schichten zum Sperren von parasitären Strompfaden A process for the production of super-lattices using alternating high and low-temperature layers to block parasitic current paths |
08/22/2013 | DE102013202518A1 P-Typ-Halbleitermaterial und Halbleitervorrichtung P-type semiconductor material and semiconductor device |
08/21/2013 | EP2629320A2 Mask structure and method for defect-free heteroepitaxial deposition |
08/21/2013 | EP2627804A1 Method for fabricating a free-standing group iii nitride substrate |
08/21/2013 | EP2627803A1 Heterogrowth |
08/21/2013 | CN203144557U Bidirectional enhanced gas cooling device in crystal growth device |
08/21/2013 | CN203144556U Device for measuring height of crystal |
08/21/2013 | CN203144555U Electromagnetic induction heating system at bottom of polycrystalline silicon ingot furnace |
08/21/2013 | CN203144554U Heating electrodes in production equipment of sapphire crystals by kyropoulos method |
08/21/2013 | CN203144553U CCD (charge-coupled device) monitoring system of single-crystal furnace |
08/21/2013 | CN203144552U Dust removal device for top heater and top insulation board of polycrystalline silicon ingot furnace |
08/21/2013 | CN203144551U Split-type heating device |
08/21/2013 | CN103261493A Apparatus and method for directional solidification of silicon |
08/21/2013 | CN103261492A System of controlling diameter of single crystal ingot and single crystal ingot growing apparatus including the same |
08/21/2013 | CN103258722A Method adopting AlGaInN buffering layer to grow three-group nitride in GaAs substrate |
08/21/2013 | CN103255480A Preparation method for large-size 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) thin crystal |
08/21/2013 | CN103255479A Method for synthesizing MnTeMoO6 crystal by using hydrothermal method |
08/21/2013 | CN103255478A Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal |
08/21/2013 | CN103255477A Molded sapphire crystal growth method and apparatus thereof |
08/21/2013 | CN103255476A Tri-twined crystal silicon and preparation method thereof |
08/21/2013 | CN103255475A Silicon crystal keel block having nucleation promoting particles and method for manufacturing the same |
08/21/2013 | CN103255474A Preparation method of large-sized single crystal graphene |
08/21/2013 | CN103255473A Auxiliary heating device for zone melting furnaces and single crystal bar heat-preserving method thereof |
08/21/2013 | CN103255472A Zone melting furnace thermal field with double power supplies for heating and heat preservation method |
08/21/2013 | CN103255471A Crystalline silicon and preparation method thereof |
08/21/2013 | CN103255470A Silicon ingot furnace and leakage detection device thereof |
08/21/2013 | CN103255469A Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer |
08/21/2013 | CN103255468A High purity silicon oxide/silicon carbide nanometer chain-like heterostructure preparation method |
08/21/2013 | CN103255374A Method for preparing ordered one-dimensional organic nano wire array |
08/21/2013 | CN102463352B Method for synthesizing bimetallic Pd-Au core-shell hexahedron |
08/21/2013 | CN102325921B Mocvd reactor having cylindrical gas inlet element |
08/21/2013 | CN102227374B Silicon for n-type solar cell and process for producing phosphorus-doped silicon |
08/21/2013 | CN102203330B Manufacturing method for silicon carbide monocrystals |
08/21/2013 | CN101748481B Method for purifying polycrystalline silicon material |
08/21/2013 | CN101688298B Method and device for preparing a multilayered coating on a substrate |
08/21/2013 | CA2803383A1 Chunk polycrystalline silicon and process for cleaning polycrystalline silicon chunks |
08/20/2013 | CA2497759C Bit-wise optical data storage utilizing aluminum oxide single crystal medium |
08/14/2013 | EP2626890A1 Epitaxial wafer, light-receiving element, optical sensor device, and method for manufacturing epitaxial wafer and light-receiving element |
08/14/2013 | EP2626451A1 Magneto-optical material, faraday rotator, and optical isolator |
08/14/2013 | DE102012202028A1 Apparatus for hydrothermal production of quartz crystals, comprises e.g. a receiving area for accommodating quartz raw material, where nucleation elements comprising nucleation plates, are arranged in a nucleation region, for adding quartz |
08/14/2013 | CN203128692U Novel furnace body cooling system for sapphire crystal growth furnace |
08/14/2013 | CN203128691U Silicon core master batch of polycrystalline silicon |
08/14/2013 | CN203128689U Plate-type mold for growing sapphire through edge-defined film-fed method |
08/14/2013 | CN203128688U Crystal synthetic furnace for producing crystals |
08/14/2013 | CN103249877A Apparatus and method for production of aluminum nitride single crystal |
08/14/2013 | CN103249876A Graphite crucible for single crystal pulling apparatus, and method for manufacturing the graphite crucible |
08/14/2013 | CN103249875A Silicon single crystal doped with gallium, indium, or aluminum |
08/14/2013 | CN103243392A Polycrystalline silicon ingot furnace and method for preparing polycrystalline silicon ingot with even and fine crystalline grains |
08/14/2013 | CN103243391A Method for preparing gold nanorods through induction of hydrogen peroxide under alkaline condition |
08/14/2013 | CN103243390A Synthesis method of ternary alkali metal-copper-chalcogenide monocrystal nano material |
08/14/2013 | CN103243389A Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate |
08/14/2013 | CN103243388A Method for heating and melting precast shaped filler in sapphire crystal growth |
08/14/2013 | CN103243387A Preparation method of anatase TiO2 monocrystal having high-activity (110) face |
08/14/2013 | CN103243386A Polysilicon ingot-casting furnace system |
08/14/2013 | CN103243385A Method for preparing high-purity monocrystalline silicon through electrolytic refining-liquid cathode in-situ directional solidification |
08/14/2013 | CN103243384A Crystal growth measurement compensation system and method thereof |
08/14/2013 | CN103243383A Growth method with cooling speed control of high-temperature superconducting block material |
08/14/2013 | CN103243382A Hot wall epitaxy device and method for growing bismuth telluride nano film |
08/14/2013 | CN103243381A Secondary feeding device and method of single crystal furnace |
08/14/2013 | CN103243380A Horizontally directional zone-melting crystallization preparation method for large-size Re:YAG series of laser crystals |
08/14/2013 | CN103243379A Producing silicon ingots comprises providing container for receiving silicon melt with e.g. base, arranging seed structure having many seed templates, preferably two templates such that templates are tilted against each other |
08/14/2013 | CN103243377A Preparation method of large-size heterogenic barium fluoride scintillation crystals |
08/14/2013 | CN103243376A Method for rapidly preparing large-area opal-structured photonic crystal |
08/14/2013 | CN103240422A Method for preparing composite heterostructure of zinc oxide nano rods and silver micron plate |
08/14/2013 | CN102425876B Helium circulating cooling system |
08/14/2013 | CN102268728B Heat exchange platform of improved structure for polycrystalline silicon ingot furnace |
08/14/2013 | CN102140696B Doped III-N bulk crystal and self-supporting doped III-N substrate |
08/14/2013 | CN102084041B Method of preparing luminescent nanocrystals, resulting nanocrystals and uses thereof |
08/14/2013 | CN102037164B Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
08/14/2013 | CN101619497B Non-linear optical crystal N-methyl-1,3-propane-diammonium aluminum pentaborate, preparation method and application thereof |
08/13/2013 | US8507039 Method for growing thin films |
08/08/2013 | WO2013115726A1 Crucibles for holding molten material and methods for producing them and for their use |
08/08/2013 | WO2013114183A1 Method and system for alumina nanofibers synthesis from molten aluminum |
08/08/2013 | US20130202521 Manganese oxide particles and process for producing same |
08/08/2013 | US20130202518 Single crystal diamond prepared by cvd |
08/07/2013 | EP2623648A1 Growth method for gan crystal and gan crystal substrate |
08/07/2013 | EP2622648A1 Sheet wafer processing as a function of wafer weight |
08/07/2013 | EP2622114A1 Sheet wafer defect mitigation |
08/07/2013 | CN203112965U Crystal taking-out device used for sapphire crystal growing furnace |
08/07/2013 | CN203112963U Air-permeable polycrystalline ingot furnace crucible cover plate |
08/07/2013 | CN203112962U Multi-tube InP (Indium Phosphide) polycrystal phosphorus bubble quick synthetizing device |
08/07/2013 | CN203112960U Crystal growth device |
08/07/2013 | CN203112959U Additional guiding device for furnace for growing long-minority-carrier-lifetime gallium-doped silicon single crystal with czochralski method |
08/07/2013 | CN203112932U Electrolytic refining bath for continuously producing high-purity polycrystalline silicon |
08/07/2013 | CN103237931A Group 13 element nitride film and laminate thereof |
08/07/2013 | CN103237930A Method of manufacturing annealed wafer |
08/07/2013 | CN103237929A Methods for forming group iii-nitride materials and structures formed by such methods |
08/07/2013 | CN103237928A Germanium enriched silicon for solar cells |
08/07/2013 | CN103233271A Method for epitaxial growth of InAs/GaSb type-II superlattice on GaAs substrate |
08/07/2013 | CN103233270A Thermal-insulation structure on upper part of sapphire single crystal furnace |
08/07/2013 | CN103233269A Low-temperature treatment method for eliminating color center of white stone crystal produced by heat exchange method |
08/07/2013 | CN103233268A Nickel-base basic nickel carbonate thin-film material as well as preparation method and application thereof |
08/07/2013 | CN103233267A Ingot technology of polycrystalline silicon |
08/07/2013 | CN103233266A Portable silicon rod withdrawing device for increasing feeding amount of single crystal furnace |
08/07/2013 | CN103231068A Method for preparing dendrimer mediated super-fine gold nanowire |
08/07/2013 | CN102534590B Method for preparing crystal titanium dioxide nanorod array film |
08/07/2013 | CN102492882B Capture and conversion rule for simulation of solidified microstructure of magnesium alloy |
08/07/2013 | CN102409177B Method for comprehensively recovering aluminum, silicon and titanium from pyrite tailings |