| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/26/1993 | CA1313107C Growth of semi-insulating indium phosphide by liquid phase epitaxy |
| 01/20/1993 | EP0523923A1 Diamond synthesis |
| 01/20/1993 | EP0523696A1 Mixed ionic conductors and the preparation thereof |
| 01/20/1993 | CN1068214A Method for preparation of superconductive bismuth series oxide crystal |
| 01/20/1993 | CN1068157A Goldelectrodeless technique for lithium tantalate monocrystal |
| 01/20/1993 | CN1068156A Controllable bi-spherical ge mono crystal growth method and its moulding die |
| 01/13/1993 | EP0522842A1 Method and apparatus for synthesizing diamond in vapor phase |
| 01/13/1993 | CN1067933A Metallic bicrystal and tricrystal growth technology and device |
| 01/12/1993 | US5178720 Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates |
| 01/12/1993 | CA2006266C Method for the epitaxial growth of a semiconductor structure |
| 01/09/1993 | CA2070436A1 Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity |
| 01/07/1993 | EP0521527A2 Magnetic garnet single crystal for measuring magnetic field intensity and optical type magnetic field intensity measuring apparatus |
| 01/07/1993 | EP0353256B1 Method of purifying and depositing group iiib and group vb compounds to produce epitaxial films |
| 01/07/1993 | DE4122404A1 Continuous ribbon strip crystal - has carrier body to carry layer of substance through melting zone and draw=off as ribbon |
| 01/06/1993 | CA2073129A1 Magnetic garnet single crystal for measuring magnetic field intensity and optical type magnetic field intensity measuring apparatus |
| 12/30/1992 | EP0520832A1 Plasma assisted diamond synthesis |
| 12/30/1992 | EP0520365A1 Method of making a Bi-Sr-Ca-Cu-O superconductive film |
| 12/30/1992 | EP0520216A2 Fabrication of defect free silicon on an insulating substrate |
| 12/30/1992 | CN1067458A Rutile single crystals and their grouth processes |
| 12/29/1992 | US5174983 Flowing together gaseous carbon and hydrogen source to form turbulent mixture which is excitied and become reactive and deposited on the substrate |
| 12/29/1992 | US5174854 Crystal growth of group II-VI compound semiconductor |
| 12/29/1992 | US5174853 Forsterite single crystal and method for the manufacture of the same |
| 12/29/1992 | CA2072455A1 Plasma assisted diamond synthesis |
| 12/29/1992 | CA1311906C Preparation of high purity boron |
| 12/23/1992 | WO1992022921A2 PROCESS FOR MAKING SUPERCONDUCTING Tl-Pb-Sr-Ca-Cu OXIDE FILMS AND DEVICES |
| 12/23/1992 | WO1992022426A1 A-axis high temperature superconducting films with preferential in-plane alignment |
| 12/23/1992 | EP0519834A1 Process and device for the manufacture of preforms for optical fibres |
| 12/23/1992 | EP0519769A2 A process for preparing a superconducting thin film of compound oxide |
| 12/23/1992 | EP0519587A1 Methods for coating adherent diamond films on cemented tungsten carbide substrates |
| 12/23/1992 | EP0519472A2 Diamond-metal junction product |
| 12/23/1992 | CA2111210A1 A-axis high temperature superconducting films with preferential in-plane alignment |
| 12/22/1992 | US5173761 Large breakdown voltage |
| 12/22/1992 | US5173283 Platelets for producing silicon carbide platelets and the platelets so-produced |
| 12/16/1992 | EP0518778A2 Laser ablation process for preparing a superconducting thin film formed of compound oxide superconductor material and apparatus for executing such process |
| 12/16/1992 | EP0518631A2 Tool components |
| 12/16/1992 | EP0518532A1 Boron-doped diamond |
| 12/16/1992 | EP0518187A2 Method for making a high temperature superconducting device and high temperature superconducting device |
| 12/15/1992 | CA1311402C Process for the preparation of doped 3-5 monocristalline semi-dielectrics and their applications |
| 12/11/1992 | CA2070750A1 Tool components |
| 12/10/1992 | DE4218618A1 Single-crystal semiconductor growth technique - using Czochralski method with applied magnetic field, provides equalised axial oxygen concn. of crystal blank |
| 12/09/1992 | EP0517448A1 Fibrous composite metal hydroxide and process for the production thereof |
| 12/02/1992 | EP0515682A1 Thin film of lithium niobate single crystal |
| 11/26/1992 | WO1992020464A1 Method and apparatus for plasma deposition |
| 11/26/1992 | CA2443497A1 Method and apparatus for plasma deposition |
| 11/25/1992 | EP0515288A1 Process for the hydrothermal growth of crystals using seeds obtained by assembling flat sheets |
| 11/25/1992 | EP0321576B1 Method for growing single crystal from molten liquid |
| 11/25/1992 | CA2069203A1 Enlargement process for hydrothermal growth crystals using a germ obtained by crystal slabs combination |
| 11/19/1992 | EP0513191A1 Doped crystalline compositions and a method for preparation thereof. |
| 11/17/1992 | US5164041 Nonsemiconductor laser |
| 11/12/1992 | DE4214795A1 Czochralski growth or oxide monocrystal(s) - uses as standard reactor with the addn. of a permeable soreen surrounding the crystal growth region inside the crucible to control temp. |
| 11/11/1992 | EP0324810B1 Quartz glass reactor for mocvd installations |
| 11/11/1992 | CN1019031B Apparatus for manufacturing silicon single crystals |
| 11/03/1992 | US5160405 In oxygen and hydrogen, electron beam radiation, plasma, unmasked areas converted to graphite |
| 11/03/1992 | US5160401 For use as substrates for high temperature superconducting films |
| 10/29/1992 | WO1992018671A1 Process for growing crystals |
| 10/28/1992 | CN1018852B Process for preparing lithium niobate monocrystal by erbium and magnesium doping |
| 10/28/1992 | CN1018851B Apparatus for manufacturing single silicon crystal |
| 10/27/1992 | CA1309320C Continuous method for manufacturing grain-oriented magnetostrictive bodies |
| 10/27/1992 | CA1309308C High purity doping alloys |
| 10/21/1992 | EP0509060A1 Hydrothermal process for growing optical-quality single crystals. |
| 10/20/1992 | US5157466 Grain boundary junctions in high temperature superconductor films |
| 10/20/1992 | US5157017 Melting oxide precursor material, resolidification producing elongate crystallites |
| 10/15/1992 | WO1992017406A1 Production method for oxide superconductor film |
| 10/13/1992 | US5155658 Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
| 10/13/1992 | US5154796 Giant grains or single crystals of chromium and process for producing the same |
| 10/13/1992 | CA1308538C Reactor system and method for forming uniformly large diameter polycrystalline rods by the pyrolysis of silane |
| 10/07/1992 | EP0507497A1 Low temperature method for synthesizing diamond with high quality by vapor phase deposition |
| 10/07/1992 | EP0507400A2 Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations |
| 10/07/1992 | EP0506866A1 Method for crystallization of enzymes. |
| 10/07/1992 | EP0506690A1 Transport system, in particular for transporting silicon monocrystals through the tank of a research reactor. |
| 10/07/1992 | EP0346464B1 Silicon carbide:metal carbide alloy semiconductor |
| 10/06/1992 | US5152867 Czochralski method |
| 10/06/1992 | US5152433 Apparatus for feeding granular silicon material |
| 10/01/1992 | WO1992016966A1 A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| 09/30/1992 | EP0506640A1 Inserts preferably for machining of heat resistant materials and process for producing the same. |
| 09/30/1992 | EP0506570A2 Method of forming compound oxide superconducting thin film |
| 09/30/1992 | EP0506020A1 Czochralski-grown silicon single crystal for neutron transmutation doping |
| 09/29/1992 | US5151249 Chromium alloy with cobalt, tungsten, tantalum and aluminum |
| 09/29/1992 | CA1308001C Process for crystal growth of ktiopo_ from solution |
| 09/23/1992 | EP0505259A2 Superconducting field effect transistor and method for making a multilayer structure used in that transistor |
| 09/23/1992 | EP0505249A1 Apparatus for growing mixed compound semiconductor and growth method using the same |
| 09/23/1992 | EP0504960A1 Phosphorus-alloyed cubic boron nitride films |
| 09/23/1992 | EP0504959A2 Carbon-alloyed cubic boron nitride films |
| 09/23/1992 | EP0504837A2 Method and apparatus for producing silicon single crystal |
| 09/23/1992 | EP0504804A1 Bi system copper oxide superconducting thin film and method of forming the same |
| 09/23/1992 | EP0504712A1 Process for producing single crystal silicon carbide layer |
| 09/23/1992 | CN1064713A Process for preparation of highly pure mullite crystal whisker |
| 09/22/1992 | US5149938 Methods for producing indicia on diamonds |
| 09/20/1992 | WO1992016974A1 Grain boundary junctions in high temperature superconductor films |
| 09/20/1992 | CA2106579A1 Grain boundary junctions in high temperature superconductor films |
| 09/16/1992 | EP0504132A2 Sintered microcrystalline ceramic material |
| 09/16/1992 | EP0503822A2 A diamond- and/or diamond-like carbon-coated hard material |
| 09/16/1992 | EP0503816A1 Heat treatment of Si single crystal |
| 09/16/1992 | EP0503814A1 Method for testing quality of silicon wafer |
| 09/16/1992 | EP0503082A1 Device for generating microwave plasma and method of making diamond film utilizing said device |
| 09/09/1992 | EP0502204A1 Oxide superconductor |
| 09/09/1992 | EP0324812B1 Material-saving process for producing crystalline solid solutions |
| 09/08/1992 | US5145713 Stoichiometric growth of compounds with volatile components |
| 09/08/1992 | US5145550 Boron oxide encapsulant |
| 09/03/1992 | WO1992014869A1 Crystallizing biological macromolecules in microgravity |