Patents
Patents for H01S 5 - Semiconductor lasers (52,420)
08/2000
08/24/2000WO2000049693A1 A method of wavelength locking and mode monitoring a tuneable laser
08/24/2000WO2000049691A1 Emitter array with individually addressable laser diodes
08/24/2000WO2000049690A1 Compact wavelength-independent wavelength-locker for absolute wavelength stability of a laser diode
08/24/2000WO2000049689A1 Tunable laser transmitter with internal wavelength grid generators
08/24/2000WO2000049688A1 Device and method for tuning the wavelength of the light in an external cavity laser
08/24/2000WO2000049645A1 Electrode for semiconductor device and its manufacturing method
08/24/2000WO2000020912A9 Light beam display
08/24/2000CA2360921A1 A method of wavelength locking and mode monitoring a tuneable laser
08/24/2000CA2328907A1 Electrode for semiconductor device and its manufacturing method
08/24/2000CA2328287A1 Semiconductor light emitting device
08/23/2000EP1030470A2 Lightwave communication systems using semiconductor optical amplifiers
08/23/2000EP1030420A1 A vertical cavity surface emitting laser array and a process for making same
08/23/2000EP1030419A1 Wavelength tunable external cavity laser
08/23/2000EP1030418A1 Optical reflector and external cavity laser including such a reflector
08/23/2000EP1030417A2 Light output control circuit
08/23/2000EP1030409A1 Device having at least a diode laser, assembly comprising such a device and a connector for electrical power supply
08/23/2000EP1030207A2 Addressable, semiconductor adaptable Bragg gratings
08/23/2000CN1264475A Integrated optics beam deflectors and system thereof
08/23/2000CN1264199A Using laser melting for adjusting thickness of chip joining Alx, Gay, Inz N structure
08/23/2000CN1264056A Light-wave communication system using semiconductor light amplifier
08/22/2000US6108477 Photonic component with electrical conduction paths
08/22/2000US6108472 Device for re-directing light from optical waveguide
08/22/2000US6108362 Broadband tunable semiconductor laser source
08/22/2000US6108361 Semiconductor laser and method for producing the same
08/22/2000US6108360 Long wavelength DH, SCH and MQW lasers based on Sb
08/22/2000US6108355 Continuously-tunable external cavity laser
08/22/2000US6108138 Optical beam shaper, and radiation source unit and scanning device including said beam shaper
08/22/2000US6107850 Output pulse width control system
08/22/2000US6107646 Variable light source and optical pickup apparatus for different-type optical disc using the same
08/22/2000US6107162 Forming a semiconductor layer on one surface of a sapphire substrate, forming grooves in a surface opposite of substrate surface in such a shape as to concentrate stress at bottom portion of the groove, breaking the substrate at groove
08/22/2000US6107112 Periodically forming grooves at a surface of an indium phosphide substrate, heating the substrate with a mixture of phosphine and arsine to grow indium-arsenic-phsophide layer in each groove, and forming multilayer; crystalllization
08/22/2000CA2296950A1 Magnetically tunable and latchable broad-range semiconductor laser
08/22/2000CA2201622C Optical q-switching to generate ultra short pulses in diode lasers
08/19/2000CA2298492A1 Micro-lens, combination micro-lens and vertical cavity surface emitting laser, and methods for manufacturing the same
08/17/2000WO2000048278A1 Method for forming an optical silicon layer on a support and use of said method in the production of optical components
08/17/2000WO2000048277A1 Resonator system with at least two folding elements
08/17/2000WO2000048276A2 Fiber grating-stabilized, semiconductor pump source
08/17/2000WO2000048275A1 Silicon light-emitting device and method for the production thereof
08/17/2000WO2000048254A1 Nitride semiconductor device and its manufacturino method
08/17/2000WO2000048008A1 Polarization transformer and current sensor using the same
08/17/2000DE19953609A1 Dickenanpassen von waferverbundenen Al¶x¶Ga¶y¶In¶z¶N-Strukturen durch Laserschmelzen Dick Customize wafer Al¶x¶Ga¶y¶In¶z¶N associated structures by laser melting
08/17/2000DE19953588A1 Waferverbundene Al¶x¶Ga¶y¶In¶z¶N-Strukturen Related Al¶x¶Ga¶y¶In¶z¶N wafer structures
08/17/2000DE10005359A1 Resonator arrangement with at least two folding elements has angle between beam axis and surface normal to folding element reflective surface greater than boundary angle for total reflection
08/17/2000DE10000088A1 Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure
08/16/2000EP1028505A1 A vertical-cavity surface-emitting laser comprised of single laser elements arranged on a common substrate
08/16/2000EP1028504A1 High power single mode semiconductor lasers and optical amplifiers using 2D bragg gratings
08/16/2000EP1028503A2 Self-monitored light source for stable wavelength optical communications
08/16/2000EP1028340A1 Method for connecting optical waveguide and optical semiconductor device and apparatus for connecting the same
08/16/2000EP1028339A2 Light transmitting/receiving module
08/16/2000EP1028333A2 Multiple wavelength optical multiplexing device, multiple wavelength light source incorporating aforementioned device, and optical amplifier
08/16/2000EP1028308A2 Gyro
08/16/2000CN1263642A Laser device
08/16/2000CN1263602A Method of fabricating distributed reflection multilayer mirror
08/15/2000US6104851 Transmission system comprising a semiconductor laser and a fiber grating discriminator
08/15/2000US6104850 Semiconductor polarization mode converter having a diffraction grating
08/15/2000US6104741 Semiconductor laser light source and solid-state laser apparatus
08/15/2000US6104740 Infrared laser structure having an inverted or p-side down orientation; the infrared laser structure is inverted and wafer fused to a blue laser structure to form infrared/blue monolithic laser structure
08/15/2000US6104739 Series of strongly complex coupled DFB lasers
08/15/2000US6104738 Semiconductor laser and process for producing the same
08/15/2000US6104736 Driving apparatus for semiconductor laser and method for controlling driving of semiconductor laser
08/15/2000US6104690 Integrated optical apparatus and associated methods
08/15/2000US6104535 Laser irradiation apparatus and method
08/15/2000US6104526 Optical amplifier and a method of controlling the optical amplifier
08/15/2000US6104516 Wavelength-changeable light source capable of changing wavelength of output light, optical communication network using the same and wavelength control method for controlling wavelength
08/15/2000US6104489 Arrangement relating to beam emission
08/15/2000US6104044 Semiconductor compound electrode material containing calcium and a noble metal
08/15/2000US6104039 P-type nitrogen compound semiconductor and method of manufacturing same
08/15/2000US6103543 Forming a base layer of electrode made of vanadium, niobium amd/or zirconium on a portion of n-type gallium nitride (gan) layer; forming main electrode layer of another metal; heat treating to form an n electrode; improved connection
08/15/2000US6103542 Method of manufacturing an optoelectronic semiconductor device comprising a mesa
08/15/2000US6103398 The overfill material that attaches the fiber connector and semiconductor receiver area, wherein the overfill material comprsises epxoy diacrylate, tripropylene glycol diacryalte and styrene, benzoyl peroxide and stabilizer
08/10/2000WO2000046893A1 Semiconductor laser and semiconductor laser module using the same
08/10/2000WO2000046862A1 Photoelectric conversion functional element and production method thereof
08/10/2000WO2000046619A1 Optical waveguide with multiple core layers and method of fabrication thereof
08/10/2000WO2000046578A1 Chiral twist laser and filter apparatus and method
08/10/2000DE19904248A1 Sendemodul für den Einsatz in einem DST Übertragungssystem sowie DST Übertragungssystem Transmitter module for use in a transmission system and DST DST transmission system
08/10/2000CA2326723A1 Semiconductor laser device and semiconductor laser module using the same
08/09/2000EP1026841A2 Transmitter for use in a dispersion supported transmission system and dispersion supported transmission system
08/09/2000EP1026799A2 Semiconductor laser and fabricating method therefor
08/09/2000EP1026798A2 Vertical cavity surface emitting laser (VCSEL), using buried bragg reflectors and method for producing same
08/09/2000EP1025660A1 Optical emitter having a modulatable laser source with stable wavelength
08/09/2000EP1025625A1 Filamented multi-wavelength vertical-cavity surface emitting laser
08/09/2000EP1025593A1 Semiconductor with tunnel hole contact sources
08/09/2000CN1262787A II-VI semiconductor component with at least one junction between Se-containing layer and BeTe containing layer and method for producing said junction
08/09/2000CN1262539A Technology for making luminous element of optical ridge waveguide semiconductor
08/09/2000CN1262528A Process for preparing indium aluminium gallium nitrogen optical transmitting set by removing substrate
08/09/2000CA2297522A1 Light transmitting/receiving module
08/08/2000US6101295 High-frequency circuit, optical module employing same, and method of matching impedance
08/08/2000US6101210 External cavity laser
08/08/2000US6101206 Laser-diode device including heat-conducting walls, semiconductor strips and isolating seals and process for making laser-diode device
08/08/2000US6101205 Laser bar structure and method of fabrication
08/08/2000US6101204 Process for making integrated laser/modulators
08/08/2000US6101202 Semiconductor laser module
08/08/2000US6101200 Laser module allowing simultaneous wavelength and power control
08/08/2000US6101027 All-optical wavelength converter using a semiconductor optical amplifier and a polarization interferometer
08/08/2000US6101014 Wavelength controlling method enabling use of wider wavelength range and network system using the method
08/08/2000US6100973 Methods and apparatus for performing microanalytical techniques using photolithographically fabricated substrates having narrow band optical emission capability
08/08/2000US6100586 The electrical contact comprises a layer of p-type gallium nitride, a metal layer, and an intermediate layer sandwiched between above two layer and including layers of differnt group 3 to 5 semiconduictors with prefered energy levels
08/08/2000US6100578 Silicon-based functional matrix substrate and optical integrated oxide device
08/08/2000US6100546 Bandgap light emitting materials, comprising gallium aresinide nitride and indium arsenide-nitiride, useful for semiconductor lasers with different emission wavelength within the lightwave spectrum from ultraviolet to infrared
08/08/2000US6100545 GaN type semiconductor device