Patents
Patents for H01S 5 - Semiconductor lasers (52,420)
02/2000
02/29/2000US6031858 Semiconductor laser and method of fabricating same
02/29/2000US6031857 Semiconductor device having a current-constricting spaces and method of manufacturing the device
02/29/2000US6031856 Method, article of manufacture, and optical package for eliminating tilt angle between a header and an optical emitter mounted thereon
02/29/2000US6031855 Light emitting element driving circuit and light emitting device having the same
02/29/2000US6031851 Mode-locked semiconductor laser and method of driving the same
02/29/2000US6031644 Method, device, and system for controlling wavelength of optical signal
02/29/2000US6031243 Grating coupled vertical cavity optoelectronic devices
02/29/2000US6030886 Growth of GaN on a substrate using a ZnO buffer layer
02/29/2000US6030452 Planarized growth of III-V compound
02/29/2000US6030411 Photoemitting catheters and other structures suitable for use in photo-dynamic therapy and other applications
02/29/2000CA2165547C Curved grating surface-emitting distributed feedback laser
02/28/2000CA2246087A1 Method of cleaving a semiconductor wafer
02/26/2000CA2280285A1 Interferometer based optical devices, particulary amplifiers
02/26/2000CA2244160A1 High gain, high power, low noise optical waveguide amplifiers
02/24/2000WO2000010268A1 Path monitoring in optical communication systems
02/24/2000WO2000010235A1 Injection laser
02/24/2000WO2000010234A1 Optically-pumped external-mirror vertical-cavity semiconductor-laser
02/24/2000DE19837839A1 Detonator for explosive material for vehicle airbag or seatbelt tensioner, has laser diode with transparent housing in direct contact with explosive material
02/24/2000CA2340436A1 Path monitoring in optical communication systems
02/24/2000CA2340042A1 Injection laser
02/23/2000EP0981212A1 Path monitoring in optical communication systems
02/23/2000EP0980595A2 Organic lasers
02/23/2000EP0980538A1 Device and method for regenerating a train of solitons
02/22/2000US6028881 Wavelength selectable laser source
02/22/2000US6028878 Laser diode array with built-in current and voltage surge protection
02/22/2000US6028877 Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate
02/22/2000US6028876 High power semiconductor laser device and method for fabricating the same
02/22/2000US6028875 Phosphide barrier
02/22/2000US6028874 Multilayer
02/22/2000US6028871 Driver circuit for a solid state optical emitter device
02/22/2000US6028310 Linear cavity laser system for intracavity laser spectroscopy
02/22/2000US6027989 Bandgap tuning of semiconductor well structure
02/22/2000US6027256 Composite laser diode enclosure and method for making the same
02/22/2000US6027254 Opto-electronic hybrid integration platform, optical sub-module, opto-electronic hybrid integration circuit, and process for fabricating platform
02/22/2000US6026557 Method for laser bar facet coating
02/17/2000WO2000008730A1 Electro-optical semiconductor device with a polyimide/silicon oxide bi-layer beneath a metal contact layer
02/17/2000WO2000008729A1 Optical module and method of manufacture thereof
02/17/2000WO2000008691A1 Zinc oxide films containing p-type dopant and process for preparing same
02/17/2000WO1999063582A3 Method for producing semiconductor elements
02/17/2000WO1999057579A9 Doe-based systems and devices for producing laser beams having modified beam characteristics
02/17/2000DE19836541A1 Simultaneous manufacture of multiple electro-optical modules
02/17/2000CA2339943A1 Electro-optical semiconductor device with a polyimide/silicon oxide bi-layer beneath a metal contact layer
02/16/2000EP0979882A1 Method of manufacturing a nitride series III-V group compound semiconductor
02/16/2000EP0979547A1 Tunable external cavity diode laser
02/16/2000EP0808522B1 Semiconductor diode laser, in particular a laser amplifier, and method of manufacturing this laser
02/16/2000CN1049504C Optical module for two-way transmission
02/15/2000US6026206 Optical coupler using anamorphic microlens
02/15/2000US6026111 Vertical cavity surface emitting laser device having an extended cavity
02/15/2000US6026110 Distributed feedback semiconductor laser with gain modulation
02/15/2000US6026108 Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber
02/15/2000US6026107 Semiconductor optical functional device and method of driving the same
02/15/2000US6026106 Composite optical device
02/15/2000US6026105 Technique for measuring semiconductor laser chirp
02/15/2000US6026104 Apparatus for controlling laser diode
02/15/2000US6026100 External cavity-type of wavelength tunable semiconductor laser light source and method for tuning wavelength therefor
02/15/2000US6025963 Optical apparatus comprising an adjustable holder device
02/15/2000US6025939 Continuously tunable laser
02/15/2000US6025213 Semiconductor light-emitting device package and method of manufacturing the same
02/15/2000US6025207 Growing, on doped buffer layer on doped substrate, guiding layer of non-doped quaternary compound, extremely thin highly doped intermediate layer, non-doped active layer, differently doped protection layer; etching active layer, sheathing
02/15/2000US6024794 Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination
02/15/2000US6024283 Bar code readers having selectable optical elements
02/10/2000WO2000007247A1 Lead frame attachment for optoelectronic device
02/10/2000DE19931300A1 Photonic semiconductor device, e.g. an LED or laser diode, comprises an indium gallium aluminum nitride semiconductor layer on a c-axis aligned zinc oxide buffer layer
02/10/2000DE19835392A1 Ansteuerschaltung für Leuchtdioden A drive circuit for LEDs
02/10/2000DE19828427A1 Method to control wavelength of radiation emitting semiconductor component, e.g. superluminescence or laser diode, where emission wavelength depends both on its temperature and current
02/10/2000CA2338993A1 Lead frame attachment for optoelectronic device
02/09/2000EP0979024A1 Control circuit for electrolumiscent diodes
02/09/2000EP0978912A2 Multi-quantum well lasers with selectively doped barriers
02/09/2000EP0978911A2 Optical functional devices, their manufacturing method and optical communication system
02/09/2000EP0978910A2 Improved laser diode and substrate
02/09/2000EP0978737A1 Method of fabricating distributed reflection multilayer mirror
02/09/2000EP0978147A2 SEMICONDUCTOR DEVICE COMPRISING P-TYPE ZnMgSSe LAYER
02/09/2000EP0397691B1 Current injection laser
02/09/2000CN1244027A Method for transferring miniature machined block including integrated circuits
02/08/2000US6023548 Device for the conversion of a plurality of light beams into a more compact arrangement of light beams
02/08/2000US6023485 Vertical cavity surface emitting laser array with integrated photodetector
02/08/2000US6023484 Semiconductor laser device
02/08/2000US6023483 Semiconductor light-emitting device
02/08/2000US6023482 Article comprising a strain-compensated QC laser
02/08/2000US6023481 Module having Peltier element
02/08/2000US6023480 Fast tunable multiwavelength laser with folded imaging arrangement of nonoverlapping focal regions
02/08/2000US6023450 Multiple beam optical pickup using a vertical cavity surface emitting laser array
02/08/2000US6023362 Optical transmitter having pre-modulation amplification
02/08/2000US6023354 Semiconductor Bragg reflector and a method of fabricating said reflector
02/08/2000US6023339 One-dimensional active alignment of optical or opto-electronic devices on a substrate
02/08/2000US6023076 Group III nitride compound semiconductor light emitting device having a current path between electrodes
02/08/2000US6022760 Integrated electro-optical package and method of fabrication
02/08/2000CA2179517C Light source intensity control device
02/03/2000WO2000005792A1 High power laterally antiguided semiconductor light source with reduced transverse optical confinement
02/03/2000WO2000005791A2 Adjustable system of a diode laser having an external resonator in the littman configuration
02/03/2000WO2000005790A1 Tunable laser and method for operating the same
02/03/2000DE19933552A1 Photonic semiconductor device, e.g. an LED or laser diode, comprises an indium gallium aluminum nitride semiconductor layer on a ZnO buffer layer of controlled c-axis lattice constant
02/03/2000DE19832750A1 Justierbares System eines Diodenlasers mit externem Resonator in der Littmann-Konfiguration Adjustable system of external cavity diode laser in Littman configuration
02/03/2000CA2343087A1 Tunable laser and method for operating the same
02/03/2000CA2279562A1 Improved laser diode and substrate
02/02/2000EP0977329A2 Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
02/02/2000EP0977279A2 AlGalnN LED and laser diode structures
02/02/2000EP0977276A1 Semiconductor device cleave initiation
02/02/2000EP0977028A1 Method of spectrochemical analysis of impurity in gas
02/02/2000EP0976185A1 Optical system for symmetrizing the beam of one or more superimposed high-power diode laser