Patents
Patents for H01S 5 - Semiconductor lasers (52,420)
12/2000
12/26/2000US6167073 High power laterally antiguided semiconductor light source with reduced transverse optical confinement
12/26/2000US6167072 Modulated cap thin p-clad semiconductor laser
12/26/2000US6167071 Semiconductor laser
12/26/2000US6167070 Optical semiconductor device and method of fabricating the same
12/26/2000US6167068 Intracavity frequency-converted optically-pumped semiconductor laser
12/26/2000US6166837 WDM system for reduced SBS
12/26/2000US6166597 Method for feedback control of a controlled variable
12/26/2000US6165811 Method of fabricating a high power semiconductor laser with self-aligned ion implantation
12/26/2000US6164836 Opto-electronic hybrid integration platform, optical sub-module, opto-electronic hybrid integration circuit, and process for fabricating platform
12/25/2000CA2311062A1 Plastic packaged optoelectronic device
12/24/2000CA2312150A1 Optical transmitter, and wavelength multiplexing optical transmission apparatus using the same
12/23/2000CA2312129A1 High speed level shift circuit for low voltage output
12/21/2000WO2000078102A1 Light-emitting device
12/21/2000WO2000077898A1 Bright diode-laser light-source
12/21/2000WO2000077897A1 Buried ridge semiconductor laser with aluminum-free confinement layer
12/21/2000WO2000077896A1 Semi conducteur laser with temperature independant performances
12/21/2000WO2000077863A1 Ga(In, Al) P COMPOUND-BASED LIGHT-EMITTING SEMICONDUCTOR DIODE WITH A ZnO WINDOW LAYER
12/21/2000WO2000077861A1 Stacked wavelength-selective opto-electronic device
12/21/2000DE19927008A1 Semiconductor laser component has inner boundary layers made of two different mixed crystal systems whose band distances are smaller than those of the outer boundary layers
12/21/2000DE19926801A1 Plug-in module for laser diodes, has holding element fully enclosing laser diode to side of light emitting surface, in direct contact with laser diode and with at least one cooling element
12/21/2000DE10017758A1 Verfahren zum Bilden von transparenten Kontakten an einer p-Typ-GaN-Schicht A method of forming transparent contacts on a p-type GaN layer
12/21/2000CA2376946A1 Semi conducteur laser with temperature independant performances
12/21/2000CA2376885A1 Buried ridge semiconductor laser with aluminum-free confinement layer
12/20/2000EP1061618A2 Output power controlled wavelength stabilizing system
12/20/2000EP1061588A2 Photo-conductive relay and method of making same
12/20/2000EP1061564A2 MBE growth of group III-nitride semiconductor layers
12/20/2000EP1061563A2 Compound semiconductor alloy material with two dopants
12/20/2000EP1061392A1 Optical module and method of manufacture thereof, semiconductor device, and optical transmission device
12/20/2000EP1061391A2 Optical module and method of manufacturing the same, and optical transmission device
12/20/2000EP1060545A1 Semiconductor lasers having single crystal mirror layers grown directly on facet
12/20/2000EP1060544A1 Semiconductor chip and method for the production thereof
12/20/2000EP1060541A1 Component with a light transmitter and a light receiver
12/20/2000CN1277461A Unipolar light emitting device based on superlattice III-nitride semiconductor
12/19/2000US6163631 Waveguide type optical integrated circuit element and method for fabricating same
12/19/2000US6163558 Laser system for rotating amplitude distribution of output light
12/19/2000US6163557 Mesas provide reduced area surfaces for epitaxially growing group iii-v nitride films, to reduce thermal film stresses in the films to reduce cracking
12/19/2000US6163556 High powered laser diode
12/19/2000US6163555 Regulation of emission frequencies of a set of lasers
12/19/2000US6163037 Double heterojunction light emitting device possessing a dopant gradient across the N-type layer
12/19/2000US6162656 Manufacturing method of light emitting device
12/19/2000US6162655 Method of fabricating an expanded beam optical waveguide device
12/19/2000US6162653 Lead frame attachment for optoelectronic device
12/14/2000WO2000076041A1 Semiconductor laser
12/14/2000WO2000076040A1 Monitoring and control assembly for wavelength stabilized optical system
12/14/2000WO2000076039A1 Tunable semiconductor laser system
12/14/2000WO2000076038A1 Hermetically sealed semiconductor laser device
12/14/2000WO2000076004A1 Nitride semiconductor device
12/14/2000WO2000075983A1 A method for dicing wafers with laser scribing
12/14/2000WO2000054080A3 Aperiodic longitudinal gratings and optimisation method
12/14/2000DE10022879A1 Nitride semiconductor laser manufacturing method involves forming cleavage plane for resonance of crystal layer after peeling background layer from substrate along decomposition product area
12/14/2000CA2696270A1 Nitride semiconductor device
12/14/2000CA2375692A1 Hermetically sealed semiconductor laser device
12/14/2000CA2339955A1 Semiconductor laser
12/13/2000EP1059745A2 Wavelength stabilized, tunable optical transmitter with high SMSR
12/13/2000EP1059713A2 Method and device for conditioning the light emission of a laser diode array
12/13/2000EP1059712A2 Semiconductor laser module
12/13/2000EP1059711A2 Semiconductor laser module
12/13/2000EP1059707A2 High power optical fiber ribbon laser and amplifier
12/13/2000EP1059677A2 Method for manufacturing a nitride semiconductor device and device manufactured by the method
12/13/2000EP1059662A1 Method for detaching an epitaxial layer from one substrate and transferring it to another substrate
12/13/2000EP1059661A2 Crack-free epitaxial semiconductor layer formed by lateral growth
12/13/2000EP1059554A2 Semiconductor optical device
12/13/2000EP1059547A1 Laser diode module and its manufacture method
12/13/2000EP1058857A1 Method for collectively producing microreliefs, and in particular microprisms, by micromachining, and tools for implementing said method
12/13/2000EP0823982B1 Semiconductor optical amplifier
12/13/2000CN1276916A Wafer level integration of multiple optical elements
12/12/2000US6160927 Method of fabricating integrated optical circuits which minimizes optical coupling losses
12/12/2000US6160834 Vertical cavity surface emitting lasers with consistent slope efficiencies
12/12/2000US6160833 Surface emitting laser containing a sapphire substrate, first gallium nitride layer on the substrate having first, second, third regions, a first refector of dielectric material on first region, second reflector on third region
12/12/2000US6160830 Semiconductor laser device and method of manufacture
12/12/2000US6160829 Self-sustained pulsation semiconductor laser
12/12/2000US6160828 Organic vertical-cavity surface-emitting laser
12/12/2000US6160826 Method and apparatus for performing optical frequency domain reflectometry
12/12/2000US6160672 Microlens passive alignment apparatus and method of use
12/12/2000US6160664 Process and device for forming and guiding the radiation field of one or several solid and/or semiconductor lasers
12/12/2000US6160647 Optoelectronic transmitter with improved control circuit and laser fault latching
12/12/2000US6159760 Method of fabricating oxide-aperture vertical cavity surface emitting lasers
12/12/2000US6159758 Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate
12/12/2000US6158944 Automated laser bar transfer apparatus and method
12/12/2000US6158901 Method for the hybrid integration of discrete elements on a semiconductor substrate
12/07/2000WO2000073833A1 Method and apparatus for vertical board construction of fiber optic transmitters, receivers and transceivers
12/07/2000WO2000073831A1 Electrical connection of vertically emitting laser diodes (vcsel) with directional module and optical wave guides for connecting a flat strip optical fiber cable
12/06/2000EP1058359A1 Compound semiconductor surface stabilizing method, and semiconductor device
12/06/2000EP1058358A1 Widely wavelenght tunable integrated semiconductor device and method for widely wavelenght tuning semiconductor devices
12/06/2000EP1057578A2 Laser marking system and method
12/06/2000EP1057230A1 Method and apparatus for monitoring and control of laser emission wavelength
12/06/2000EP1057060A1 On-chip alignment fiducials for surface emitting devices
12/06/2000EP1057058A1 Laser modulators
12/06/2000CN1276064A Integrated beam shaper and use thereof
12/06/2000CN1059290C Method for assembly integrated circuit on a shared substrate
12/05/2000US6157755 Laser system
12/05/2000US6156584 Method of manufacturing a semiconductor light emitting device
12/05/2000US6156582 Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector
11/2000
11/30/2000WO2000072450A2 Master oscillator grating coupled power amplifier with angled amplifier section
11/30/2000WO2000072416A1 Optical feedback assembly
11/30/2000WO2000072415A1 Method of controlling diode-laser wavelength in a diode-laser pumped solid-state laser
11/30/2000WO2000072414A2 Combined single-frequency laser and linear amplifier
11/30/2000WO2000072409A2 Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics
11/30/2000WO2000036712B1 Laser output device and related method
11/29/2000EP1056173A2 Method, device and system for waveform shaping of signal light