Patents for H01S 5 - Semiconductor lasers (52,420) |
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02/13/2001 | US6188707 Mounting structure for laser diode bars |
02/13/2001 | US6188705 Fiber grating coupled light source capable of tunable, single frequency operation |
02/13/2001 | US6188511 Optical amplifier |
02/13/2001 | US6188498 Local control for burst mode optical transmitters |
02/13/2001 | US6188132 Two-wavelength semiconductor laser diode package for use on the read/write head of an optical drive capable of reading different types of optical discs |
02/13/2001 | US6188087 Semiconductor light-emitting device |
02/13/2001 | US6187515 Etching a iii-v semiconductor wafer to form a curved mirror first surface then selectively and anisotropically etching into an opposite second surface a groove which perpendicularly intersects the plane of the first surface |
02/13/2001 | US6187088 Laser irradiation process |
02/13/2001 | US6186937 Method and device for obtaining a desired phase of optical characteristic of a fabry-perot etalon |
02/13/2001 | US6186631 Two-section semiconductor optical amplifier |
02/13/2001 | CA2208999C Semiconductor laser device |
02/08/2001 | WO2001009997A1 Multi-semiconductor laser structure with narrow wavelength division |
02/08/2001 | WO2001009996A1 Semiconductor structures using a group iii-nitride quaternary material system |
02/08/2001 | WO2001009995A1 Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers |
02/08/2001 | WO2001009962A1 Optoelectronic component and method for the production thereof |
02/08/2001 | WO2001009650A2 Optical polarizing device and laser polarisation device |
02/08/2001 | WO2000059084A3 Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication |
02/08/2001 | WO2000049691A8 Emitter array with individually addressable laser diodes |
02/08/2001 | WO2000048276A3 Fiber grating-stabilized, semiconductor pump source |
02/08/2001 | DE19935998A1 Mehrfach-Halbleiterlaserstruktur mit schmaler Wellenlängenverteilung Multiple semiconductor laser structure with a narrow wavelength distribution |
02/08/2001 | CA2380742A1 Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers |
02/07/2001 | EP1075063A2 Method and device for stabilizing the emission wavelength of a laser |
02/07/2001 | EP1074076A1 Method for producing a ridge waveguide in layer structures of a iii-v compound semiconductor and semiconductor laser device, especially for low series resistances |
02/07/2001 | EP1074075A1 Fiber grating feedback stabilization of broad area laser diode |
02/07/2001 | CN1283306A GaN signale crystalline substrate and method of producing the same |
02/07/2001 | CN1283278A Tunable nonlinearly chirped FM grating |
02/07/2001 | CN1061787C Optical sources having strongly scattering gain medium providing laser-like action |
02/06/2001 | US6185241 Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser |
02/06/2001 | US6185240 Semiconductor laser having electro-static discharge protection |
02/06/2001 | US6185239 Semiconductor laser device |
02/06/2001 | US6185238 Nitride compound semiconductor laser and its manufacturing method |
02/06/2001 | US6185237 Semiconductor laser |
02/06/2001 | US6185233 Output power controlled wavelength stabilizing system |
02/06/2001 | US6185232 Wavelength modulated laser for minimizing effects of Rayleigh backscattering |
02/06/2001 | US6185177 Flying type optical head integrally formed with light source and photodetector and optical disk apparatus with the same |
02/06/2001 | US6184560 Photosemiconductor device mounted structure |
02/06/2001 | US6184542 Superluminescent diode and optical amplifier with extended bandwidth |
02/06/2001 | US6184066 Method for fabricating semiconductor device |
02/05/2001 | CA2313961A1 Method and device for stabilizing the emission wavelength of a laser source |
02/01/2001 | WO2001008277A1 Method and apparatus for filtering an optical beam |
02/01/2001 | WO2001008229A1 ZnO COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PRODUCTION METHOD THEREOF |
02/01/2001 | WO2001008225A1 Method for making a device comprising layers of planes of quantum dots |
02/01/2001 | WO2000075983B1 A method for dicing wafers with laser scribing |
02/01/2001 | DE19915569C1 Longitudinal single-mode tunable semiconductor laser has lengths of external glass fibre cavity and glass fibre grid adjusted independently for providing continuous tuning of laser |
01/31/2001 | EP1073171A2 Lateral injection vertical cavity surface-emitting laser |
01/31/2001 | EP1073170A2 Wavelength stabilized laser light source |
01/31/2001 | EP1073169A1 Distributed feedback type semiconductor laser device having gradually-changed coupling coefficient |
01/31/2001 | EP1073168A1 Modulator-integrated semiconductor laser and method of fabricating the same |
01/31/2001 | EP1073167A2 Cooling device and surface emitting device comprising same |
01/31/2001 | EP1073107A2 Preparation of a silicon substrate |
01/31/2001 | EP1072936A2 Method and device for obtaining a desired phase of optical characteristic of a fabry-perot etalon |
01/31/2001 | EP1072074A1 Lattice-relaxed vertical optical cavities |
01/31/2001 | EP1072072A1 Optical devices |
01/31/2001 | CN1282111A Semiconductor laminated substrate, crystal substrate and semiconductor device and manufacturing method thereof |
01/31/2001 | CN1061478C High-temp. uncooled diode laser |
01/31/2001 | CN1061476C 激光器件 Laser Devices |
01/31/2001 | CN1061471C Optical device packaging and method for packaging |
01/30/2001 | US6181843 Optical switch of surface transmission type by one-dimensional array method |
01/30/2001 | US6181723 Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same |
01/30/2001 | US6181722 Optical semiconductor component with a deep ridged waveguide |
01/30/2001 | US6181721 Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam |
01/30/2001 | US6181720 Semiconductor laser device and method for manufacturing same |
01/30/2001 | US6181718 Electronically cooled semiconductor laser module with modified ground line inductance |
01/30/2001 | US6181717 Tunable semiconductor laser system |
01/30/2001 | US6181453 Method and apparatus for laser performance enhancement |
01/30/2001 | US6181363 Light-source device of a multi-beam scanning apparatus |
01/30/2001 | US6180429 Depositing on iii-v semiconductor substrate semiconductor layers; forming lift-off mask layer comprising etch mask and spacer layers; lithographically masking; etching; selectively forming semiconductor blocking layer; removing spacer layer |
01/30/2001 | US6180428 Monolithic scanning light emitting devices using micromachining |
01/28/2001 | CA2314696A1 Preparation of silicon substrate |
01/25/2001 | WO2001006608A1 Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same |
01/25/2001 | WO2001006607A1 Controlling a laser diode by using a compensation filter |
01/25/2001 | WO2001006297A2 Method and apparatus for combining light output from multiple laser diode bars |
01/25/2001 | WO2001006292A1 Receptacle module |
01/25/2001 | WO2001006286A1 Integrated optical device with coupling waveguide layer |
01/25/2001 | DE10032539A1 Diffraction grating finishing comprises forming photosensitive resist layer on base material, emitting near field light onto resist layer, forming diffraction grating pattern in the resist layer, and etching base material |
01/25/2001 | CA2378341A1 Integrated optical device with coupling waveguide layer |
01/24/2001 | EP1071180A1 n-TYPE MODULATION DOPE MULTIPLE QUANTUM WELL SEMICONDUCTOR LASER |
01/24/2001 | EP1071179A2 Saturable Bragg reflectors and their use in mode-locked lasers |
01/24/2001 | EP1071143A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING GaN-BASED CRYSTAL |
01/24/2001 | EP1071100A2 Use of barrier refractive or anti-reflective layer to improve laser trim characteristics of thin film resistors |
01/24/2001 | EP1070371A1 Method for forming an optical silicon layer on a support and use of said method in the production of optical components |
01/24/2001 | EP1070370A1 Laser assembly |
01/24/2001 | EP1070235A1 Chiral twist laser and filter apparatus and method |
01/24/2001 | EP0611494B1 Red light surface emitting semiconductor laser |
01/24/2001 | CA2314478A1 Controllable selective oxidation on vcsels |
01/23/2001 | US6178190 Stacked structure including an n-type clad layer, an active layer, and a p-type clad layer on an indium phosphide substrate; the p-type clad layer is made from an magnesium zinc selenium tellurium based compound semiconductor |
01/23/2001 | US6178189 Multi-layer semiconductor devices with stress-relief profiles |
01/23/2001 | US6178188 Laser assembly platform with silicon base |
01/23/2001 | US6178037 Optical amplifying apparatus |
01/23/2001 | US6178035 Optical device and method of manufacturing the same |
01/23/2001 | US6177814 Semiconductor integrated circuit device |
01/23/2001 | US6177690 Semiconductor light emitting device having a p-n or p-i-n junction |
01/23/2001 | US6177688 Low defect densities |
01/23/2001 | US6177684 Quantum semiconductor device having a quantum dot structure |
01/23/2001 | US6177674 Infrared radiation modulating device |
01/23/2001 | US6177359 Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
01/23/2001 | US6177292 Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
01/23/2001 | US6176968 Method and apparatus for producing semiconductor laser device |
01/23/2001 | CA2191190C Fibre grating stabilized diode laser |
01/18/2001 | WO2001005008A1 Control of polarisation of vertical cavity surface emitting lasers |